Adham
Kamal Adham, Mississauga CA
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20160138867 | FEED FLOW CONDITIONER FOR PARTICULATE FEED MATERIALS - A feed charging device comprises a holding vessel having an interior chamber for holding a reserve of a solid particulate feed material in a fluidized state, wherein the feed material is held in said fluidized state in a lower zone of the interior chamber. The feed material is supplied to the interior chamber through at least one outlet opening, and is discharged from the interior chamber through at least one outlet opening. The at least one outlet opening is in flow communication with the lower zone of the interior chamber. A gas supply means supplies a fluidizing gas to the lower zone of the interior chamber, and an outlet conduit in flow communication with the at least one outlet opening receives said feed material discharged from the interior chamber. | 05-19-2016 |
Mohammed Adham, Katana CA
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20150333478 | A LASER DRIVER AND METHOD OF OPERATING A LASER - According to the present invention there is provided a method of operating a laser comprising the steps of; defining an intensity value (K | 11-19-2015 |
Nika Adham, Englewood Cliffs, NJ US
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20090036468 | PHARMACEUTICAL COMPOSITIONS CONTAINING DOPAMINE RECEPTOR LIGANDS AND METHODS OF TREATMENT USING DOPAMINE RECEPTOR LIGANDS - The present invention relates to pharmaceutical compositions containing dopamine receptor ligands and selective serotonin reuptake inhibitors and to methods of treating disorders such as schizophrenia, major depressive disorder and bipolar depression using combinations of dopamine receptor ligands and selective serotonin reuptake inhibitors. The present invention also relates to methods of treating depression using dopamine receptor ligands. | 02-05-2009 |
20110015208 | PHARMACEUTICAL COMPOSITIONS CONTAINING DOPAMINE RECEPTOR LIGANDS AND METHODS OF TREATMENT USING DOPAMINE RECEPTOR LIGANDS - The present invention relates to pharmaceutical compositions containing dopamine receptor ligands and selective serotonin reuptake inhibitors and to methods of treating disorders such as schizophrenia, major depressive disorder and bipolar depression using combinations of dopamine receptor ligands and selective serotonin reuptake inhibitors. The present invention also relates to methods of treating depression using dopamine receptor ligands. | 01-20-2011 |
20120028991 | PHARMACEUTICAL COMPOSITIONS CONTAINING DOPAMINE RECEPTOR LIGANDS AND METHODS OF TREATMENT USING DOPAMINE RECEPTOR LIGANDS - The present invention relates to pharmaceutical compositions containing dopamine receptor ligands and selective serotonin reuptake inhibitors and to methods of treating disorders such as schizophrenia, major depressive disorder and bipolar depression using combinations of dopamine receptor ligands and selective serotonin reuptake inhibitors. The present invention also relates to methods of treating depression using dopamine receptor ligands. | 02-02-2012 |
20120046302 | METHODS OF TREATING CNS DISORDERS - The present invention relates to methods of treating various CNS disorders, e.g., mania, bipolar disorder and schizophrenia, by administering NMDA receptor antagonists, alone or in combination with dopamine receptor antagonists. | 02-23-2012 |
Nika Adham, Englewood Cliff, NJ US
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20090275597 | METHODS OF TREATING CNS DISORDERS - The present invention relates to methods of treating various CNS disorders, e.g., mania, bipolar disorder and schizophrenia, by administering NMDA receptor antagonists, alone or in combination with dopamine receptor antagonists. | 11-05-2009 |
Saman Adham, Kanata CA
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20140029362 | MECHANISMS FOR BULIT-IN SELF TEST AND REPAIR FOR MEMORY DEVICES - This description relates to a system for storing repair data of a random access memory (RAM) array in a one-time programming memory (OTPM). The system includes the RAM array, wherein the RAM array includes a main memory, redundant rows and columns, and a first repair register memory. The system further includes a built-in self-test-and-repair (BISTR) module having a second repair register memory, wherein the BISTR module is used to test and repair the RAM array. The system further includes the one-time programming memory (OTPM) for storing repair data from more than one test and repair stages for the RAM array, wherein the repair data from different test and repair stages are stored in a same data segment. | 01-30-2014 |
Saman M.i. Adham, Kanata CA
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20140281773 | METHOD AND APPARATUS FOR INTERCONNECT TEST - A method of testing interconnected dies can include forming a cell for the interconnected dies, applying at least a first input to the cell to perform an open or short defects test, and applying at least a second input to the cell to perform one or more of a resistive defects test or a burn-in-test. Test circuitry for testing an interconnection between interconnected dies can include a wrapper cell embedded within a die where the wrapper cell includes a scannable data storage element, a hold data module, a selection logic, a transition generation module, and one or more additional input ports for receiving inputs causing the wrapper cell to perform an open or short defects test in a first mode and causing the wrapper cell to perform one or more of a resistive defects test in a second mode or a burn-in-test in a third mode. | 09-18-2014 |
Saman M. I. Adham, Kanata CA
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20140282332 | FAULT INJECTION OF FINFET DEVICES - Defect-describing (or “cut”) layer(s) for describing defects associated with different sides of a 3-dimensional (3D) structure enable fault modeling to determine the effect of position and location of defects on transistor performance. One or more defect-describing layers are used to identify the coordinates and sides of the 3D structures of the defects. The defect-describing layer(s) enables fault-modeling for 3D structures to understand the effects of faults on different locations, especially for defects associated with the fins of the finFET devices. Faults are injected to different locations and sides of fins and are modeled with different test vectors, test parameters and testing devices to identify detectable faults. The fault modeling would help identify the sources of defects and also improve layout design of finFET device structures. | 09-18-2014 |
20150109848 | MECHANISMS FOR BUILT-IN SELF TEST AND REPAIR FOR MEMORY DEVICES - A method of storing repair data of a memory array in a one-time programming memory (OTPM) includes performing a first test and repair of the memory array using a built-in self-test-and-repair (BISTR) module to determine first repair data. The method includes loading the first repair data in a repair memory and in a duplicated repair memory of the BISTR module. The method includes performing a second test and repair to determine second repair data. The method includes storing the second repair data in the repair memory of the BISTR module and in the repair memory of the memory array. The method includes processing the repair data in the repair memory and the duplicated repair memory of the BISTR module. The method includes storing the output of the logic gate in the repair memory of the memory array. The method includes storing content of the repair memory in the OTPM. | 04-23-2015 |
20150143315 | FAULT INJECTION OF FINFET DEVICES - A device layout tool includes a gate electrode layer, wherein the gate electrode layer is configured to define a three dimensional gate structure over a fin structure, wherein the fin structure has three exposed surfaces. The device layout tool further includes a defect-describing layer, wherein the defect-describing layer is configured to define locations of gate defects relative to the three exposed surfaces of the fin structure. | 05-21-2015 |
Saman M. I. Adham, Ontario CA
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20130021859 | MECHANISMS FOR BUILT-IN SELF REPAIR OF MEMORY DEVICES USING FAILED BIT MAPS AND OBVIOUS REPAIRS - Failure bit map (FBM) data and a built-in-self-test-repair (BISTR) module enable collecting and analyzing FBM data of an entire memory to identify the best repairing method (or mechanism) to make repairs. By performing obvious repair during collection of the FBM data, testing and date storage resources can be saved. As a result, the repair method is better and more efficient than algorithms (or methods) known to the inventors, which only utilize partial (or incomplete) failure data. The compressed data structures used for the FBMs keep the resources used to capture the FBM data and to repair the failed cells relatively limited. | 01-24-2013 |
20130021860 | MECHANISMS FOR BUILT-IN SELF REPAIR OF MEMORY DEVICES USING FAILED BIT MAPS AND OBVIOUS REPAIRS - Failure bit map (FBM) data and a built-in-self-test-repair (BISTR) module enable collecting and analyzing FBM data of an entire memory to identify the best repairing method (or mechanism) to make repairs. As a result, the repair method is better and more efficient than algorithms (or methods) known to the inventors, which only utilize partial (or incomplete) failure data. At the same time, the compressed data structures used for the FBMs keep the resources used to capture the FBM data and to repair the failed cells relatively limited. | 01-24-2013 |
20130021861 | MECHANISMS FOR BUILT-IN SELF TEST AND REPAIR FOR MEMORY DEVICES - Mechanisms for self-testing and self-repairing memories are efficient in testing and repairing failed memory cells. The self-test-repair mechanisms are based on self-test results of failed bit map (FBM) data of the entire memories and enable early determination of non-repairable memories to prevent and limit wasting time and resources on non-repairable memories. The self-test-repair mechanisms also involve identifying candidates for column and row repairs and allow repeated repair cycles until either the memories are deemed irreparable or are fully repaired. | 01-24-2013 |
20130301369 | MECHANISMS FOR BUILT-IN SELF REPAIR OF MEMORY DEVICES USING FAILED BIT MAPS AND OBVIOUS REPAIRS - A method of self-testing and self-repairing a random access memory (RAM) is includes collecting failure data of the RAM with redundant rows and columns, wherein the failure data of all failed cells of the RAM are stored in two failure bit map (FBM) data structures. The method further includes performing obvious repair of failed cells during the collecting of the failure data and analyzing the failure data in the two FBM data structure to determine repair methods. The method further includes repairing failed cells of the RAM by using the redundant rows and columns. | 11-14-2013 |
Samer Adham, Doha QA
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20120241387 | ADVANCED OXIDATION OF KINETIC HYDRATE INHIBITORS - Advanced oxidation process namely ozonation and Fenton's (hydrogen peroxide/Fe: | 09-27-2012 |
20130168315 | REMOVAL OF FIELD CHEMICALS FROM PRODUCED WATER USING DIFFERENT MEMBRANE PROCESSES AND SYSTEM DEVELOPMENT - Methods and systems based on membrane separation processes for removal of field chemicals are provided. In certain embodiments, methods and systems for water impurity removal include introducing contaminated water into membrane separation devices, which comprise ultrafiltration, nanofiltration, or a reverse osmosis membranes. In some embodiments, the reverse osmosis system comprises a semi-permeable membrane capable of rejecting substantially all of the monovalent ions, divalent ions, and organic molecules. Examples of impurities which may be removed by this system include kinetic hydrate inhibitor and/or corrosion inhibitor. In certain embodiments, the impurity removal system may comprise one or more impurity removal stages. Some embodiments of the present invention feature a high field chemical removal rate of from about 84 percent to about 99.9 percent, depending on the choice of membranes. | 07-04-2013 |