Patent application number | Description | Published |
20110200842 | STRESS-REDUCED NI-P/PD STACKS FOR BONDABLE WAFER SURFACES - The invention relates to a substrate having a bondable metal coating comprising, in this order, on an Al or Cu surface: (a) a Ni—P layer, (b) a Pd layer and, optionally, (c) an Au layer, wherein the thickness of the Ni—P layer (a) is 0.2 to 10 m, the thickness of the Pd layer (b) is 0.05 to 1.0 m and the thickness of the optional Au layer (c) is 0.01 to 0.5 m, and wherein the Ni—P layer (a) has a P content of 10.5 to 14 wt.-%. The deposit internal stress of the resulting Ni—P/Pd stack is not higher than 34.48 M−Pa (5,000 psi). Further, a process for the preparation of such a substrate is described. | 08-18-2011 |
20140110844 | WIRE BONDABLE SURFACE FOR MICROELECTRONIC DEVICES - The present invention concerns thin diffusion barriers in metal and metal alloy layer sequences of contact area/barrier layer/first bonding layer type for metal wire bonding applications. The diffusion barrier is selected from Co-M-P. Co-M-B and Co-M-B—P alloys wherein M is selected from Mn, Zr, Re, Mo, Ta and W having a thickness in the range 0.03 to 0.3 μm. The first bonding layer is selected from palladium and palladium alloys. | 04-24-2014 |
Patent application number | Description | Published |
20110014036 | HEAT SHIELD AND TURBOCHARGER HAVING A HEAT SHIELD - A heat shield, in particular for a turbocharger, has a disk or a pot shape which is stepped once or multiple times. The disc or pot shape has an outer edge, and the outer edge is provided with at least one opening section. The opening section forms a web section with the outer edge, said web section being bent outward in order to form a spring arm. The web section is either designed as closed or as open at one point. | 01-20-2011 |
20120117966 | TURBOCHARGER, AND METHOD FOR MOUNTING A CLOSED-LOOP CONTROL DEVICE FOR A TURBOCHARGER - A turbocharger, in particular a turbocharger for an internal combustion engine of a motor vehicle, has a turbine that includes a turbine casing, and a closed-loop control device for regulating an exhaust gas stream flowing through the turbine. The closed-loop control device includes an adjusting element for adjusting an exhaust gas stream, a control lever that is arranged on the turbine casing and is used for actuating the adjusting element, and a control rod which is connected to the control lever via an adjustment piece that has a guide for continuously moving the control rod within the adjustment piece. The control rod can be fixed within the guide by forming an integral joint therewith. There is also provided a method for mounting a closed-loop controller for such a turbocharger. | 05-17-2012 |
20120227398 | EXHAUST GAS TURBOCHARGER, MOTOR VEHICLE AND METHOD FOR ASSEMBLING AN EXHAUST GAS TURBOCHARGER - An exhaust gas turbocharger, in particular for an internal combustion engine of a motor vehicle, has a bearing housing for supporting an impeller shaft and a compressor housing receiving a compressor disc. A clamping device with a first arm section and an engagement section, wherein the first arm section contacts a surface of the bearing housing at least in sections, and a counter-clamping device with a head segment and a counter-engagement section. The head section contacts a first surface of the compressor housing at least in sections, and the counter-engagement section can be brought into form-fit contact with the engagement section, such that the bearing housing and the compressor housing; are connected to each other by way of a force fit. The invention also includes a motor vehicle and a method for assembling such an exhaust gas turbocharger. | 09-13-2012 |
20120260651 | WASTE GATE ARRANGEMENT FOR A TURBINE, TURBINE FOR AN EXHAUST GAS TURBOCHARGER, EXHAUST GAS TURBOCHARGER, MOTOR VEHICLE, AND METHOD FOR OPERATING AN EXHAUST GAS TURBOCHARGER - A waste gate arrangement for a turbine, particularly for an exhaust gas turbocharger, has a waste gate valve for bypassing exhaust gas past the turbine. A waste gate shaft has first and second bearing locations rotatably supporting the shaft. A lever arm is rotationally fixedly mounted on the waste gate shaft and configured for placing the shaft in rotation when a lever arm force is applied to the lever arm. A waste gate flap is fixed on the shaft and controls the amount of exhaust gas flowing through the valve, and disposed relative to the first and the second bearing locations such that a lever arm normal force resulting from the lever arm force when opening and/or closing the waste gate valve and an exhaust gas normal force acting on the waste gate flap have opposite force action directions at one or both bearing locations. | 10-18-2012 |
20120288367 | TURBOCHARGER HOUSING AND TOOL DEVICE FOR MACHINING THE TURBOCHARGER HOUSING - A turbocharger has a housing with at least one section that is divided in the longitudinal direction into at least two housing halves. | 11-15-2012 |
20130291539 | EXHAUST-GAS TURBOCHARGER HAVING A COMPRESSOR HOUSING WITH AN INTEGRATED WASTEGATE ACTUATOR - An exhaust gas turbocharger has a compressor housing formed with a fresh-air inlet duct. An electric wastegate actuator is integrated into the compressor housing. The electric wastegate actuator is thermally coupled to the fresh-air inlet duct. | 11-07-2013 |
20150184542 | Turbine housing for a turbocharger - A turbine housing for a turbocharger has a plurality of interconnected housing parts. A central, one-piece contoured component that is constructed as a cast component or a forged component is provided on that side of a spiral channel which faces away from a bearing housing attachment flange in the turbine housing. The contoured component has a wall region of the spiral channel, a boundary wall of an exhaust gas inlet gap and a sealing contour region. The contoured component is connected to its adjacent housing parts, which are at least partly constructed as sheet metal molded parts, so as to form the turbine housing. | 07-02-2015 |
Patent application number | Description | Published |
20080315326 | Method for forming an integrated circuit having an active semiconductor device and integrated circuit - An integrated circuit having an active semiconductor device is formed comprising a trench defined by conductor lines previously formed. | 12-25-2008 |
20140145281 | CONTROLLING OF PHOTO-GENERATED CHARGE CARRIERS - Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region | 05-29-2014 |
20140284663 | Method of Manufacturing an imager and imager device - Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted. | 09-25-2014 |
20150222317 | SWITCHING DEVICE, A COMMUNICATION DEVICE, AND A METHOD FOR PROCESSING A CARRIER - According to various embodiments, a switching device may include: an antenna terminal; a switch including a first switch terminal and a second switch terminal, the first switch terminal coupled to the antenna terminal, the switch including at least one transistor at least one of over or in a silicon region including an oxygen impurity concentration of smaller than about 3×10 | 08-06-2015 |
20150340277 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate. | 11-26-2015 |
Patent application number | Description | Published |
20100148255 | LATERAL HIGH-VOLTAGE MOS TRANSISTOR WITH A RESURF STRUCTURE - For achieving an enhanced combination of a low on-resistance at a high break-through voltage a lateral high-voltage MOS transistor comprises a plurality of doped RESURF regions of the first conductivity type within the drift region, wherein the doped RESURF regions are separated from each other by drift region sections in a first lateral direction (y), which is parallel to a substrate surface and is orthogonal to a connecting line from the source region to the drain region, and also in a depth direction, which is orthogonal to the substrate surface, such that in each of said two directions an alternating arrangement of regions of the first and second conductivity types is provided. | 06-17-2010 |
20100148276 | BIPOLAR INTEGRATION WITHOUT ADDITIONAL MASKING STEPS - The invention relates to a BiMOS semiconductor component having a semiconductor substrate wherein, in a first active region, a depletion-type MOS transistor is formed comprising additional source and drain doping regions of the first conductivity type extending in the downward direction past the depletion region into the body doping region while, in a second active region, ( | 06-17-2010 |
20100311214 | MASK-SAVING PRODUCTION OF COMPLEMENTARY LATERAL HIGH-VOLTAGE TRANSISTORS WITH A RESURF STRUCTURE - The invention relates to a method for the production of a first lateral high-voltage MOS transistor and a second lateral high-voltage MOS transistor complimentary thereto on a substrate, wherein the first and second lateral high-voltage MOS transistors each have a conductivity type opposite a drift region, comprising the steps of providing a substrate of a first conductivity type comprising a first active region for the first lateral high-voltage MOS transistor and a second active region for the second lateral high-voltage MOS transistor, and the producing at least one first doping region of the first conductivity type in the first active region and, on the other hand, in the second active region, a drain extension region of the first conductivity type extending from the substrate surface to the interior of the substrate, which allows a simultaneous implantation of doping material in the first and second active regions through respective mask openings of one and the same mask. | 12-09-2010 |
20110127583 | SEMICONDUCTOR COMPONENT WITH INTEGRATED HALL EFFECT SENSOR - A semiconductor device with an integrated circuit on a semiconductor substrate comprises a Hall effect sensor in a first active region and a lateral high voltage MOS transistor in a second active region. The semiconductor device of the present invention is characterized in that the structure of the integrated Hall effect sensor is strongly related with the structure of a high-voltage DMOS transistor. The integrated Hall effect sensor is in some features similar to a per se known high-voltage DMOS transistor having a double RESURF structure. The control contacts of the Hall effect sensor correspond to the source and drain contacts of the high-voltage DMOS transistor. The semiconductor device of the present invention allows a simplification of the process integration. | 06-02-2011 |
20130175615 | LDMOS Transistors For CMOS Technologies And An Associated Production Method - In a semiconductor component or device, a lateral power effect transistor is produced as an LDMOS transistor in such a way that, in combination with a trench isolation region ( | 07-11-2013 |
Patent application number | Description | Published |
20100056387 | ASSAYS - A method for assaying a sample for each of multiple analytes is described. The method includes contacting an array of spaced-apart test zones with a liquid sample (e.g., whole blood). The test zones are disposed within a channel of a microfluidic device. The channel is defined by at least one flexible wall and a second wall which may or may not be flexible. Each test zone comprising a probe compound specific for a respective target analyte. The microfluidic device is compressed to reduce the thickness of the channel, which is the distance between the inner surfaces of the walls within the channel. The presence of each analyte is determined by optically detecting an interaction at each of multiple test zones for which the distance between the inner surfaces at the corresponding location is reduced. The interaction at each test zone is indicative of the presence in the sample of a target analyte. | 03-04-2010 |
20100179068 | Assays - A method for assaying a sample for each of multiple analytes is described. The method includes contacting an array of spaced-apart test zones with a liquid sample (e.g., whole blood). The test zones disposed within a channel of a microfluidic device. The channel is defined by at least one flexible wall and a second wall which may or may not be flexible. Each test zone comprising a probe compound specific for a respective target analyte. The microfluidic device is compressed to reduce the thickness of the channel, which is the distance between the inner surfaces of the walls within the channel. The presence of each analyte is determined by optically detecting an interaction at each of multiple test zones for which the distance between the inner surfaces at the corresponding location is reduced. The interaction at each test zone is indicative of the presence in the sample of a target analyte. | 07-15-2010 |
20140099731 | Assays - A method for assaying a sample for each of multiple analytes is described. The method includes contacting an array of spaced-apart test zones with a liquid sample (e.g., whole blood). The test zones disposed within a channel of a microfluidic device. The channel is defined by at least one flexible wall and a second wall which may or may not be flexible. Each test zone comprising a probe compound specific for a respective target analyte. The microfluidic device is compressed to reduce the thickness of the channel, which is the distance between the inner surfaces of the walls within the channel. The presence of each analyte is determined by optically detecting an interaction at each of multiple test zones for which the distance between the inner surfaces at the corresponding location is reduced. The interaction at each test zone is indicative of the presence in the sample of a target analyte. | 04-10-2014 |
20140148365 | Assays - A method for assaying a sample for each of multiple analytes is described. The method includes contacting an array of spaced-apart test zones with a liquid sample (e.g., whole blood). The test zones are disposed within a channel of a microfluidic device. The channel is defined by at least one flexible wall and a second wall which may or may not be flexible. Each test zone comprising a probe compound specific for a respective target analyte. The microfluidic device is compressed to reduce the thickness of the channel, which is the distance between the inner surfaces of the walls within the channel. The presence of each analyte is determined by optically detecting an interaction at each of multiple test zones for which the distance between the inner surfaces at the corresponding location is reduced. The interaction at each test zone is indicative of the presence in the sample of a target analyte. | 05-29-2014 |
20150177231 | Assays - A method for assaying a sample for each of multiple analytes is described. The method includes contacting an array of spaced-apart test zones with a liquid sample (e.g., whole blood). The test zones disposed within a channel of a microfluidic device. The channel is defined by at least one flexible wall and a second wall which may or may not be flexible. Each test zone comprising a probe compound specific for a respective target analyte. The microfluidic device is compressed to reduce the thickness of the channel, which is the distance between the inner surfaces of the walls within the channel. The presence of each analyte is determined by optically detecting an interaction at each of multiple test zones for which the distance between the inner surfaces at the corresponding location is reduced. The interaction at each test zone is indicative of the presence in the sample of a target analyte. | 06-25-2015 |