Patent application number | Description | Published |
20090232471 | Information Recording Apparatus - An information recording/reproducing apparatus capable of simplifying settings of a scene breakpoint includes a voice recognition unit and a control unit. At a timing when the voice recognition unit extracts a feature during recording, the control units sets a scene breakpoint and generates a thumbnail at the same time. During reproduction, the thumbnail and voices when the feature was extracted are output at the same time. | 09-17-2009 |
20090297051 | Image Processing Apparatus - An image processing apparatus is configured to have units for compressing and expanding image data and an arbitrating unit for arbitrating control units for executing image processing so that the compressing and expanding units are located between the arbitrating unit and the control units respectively. The apparatus further includes the circuits for compressing and expanding the image data in a reversible manner and a nonreversible manner so that the compressing and expanding manner may be switched according to the image processing condition. When treating a large amount of image data, this configuration makes it possible to reduce the number of accesses to memory and make effective use of a bandwidth, thereby being able to reduce the power consumption. Since the bandwidth is reduced and the random access to memory is made possible, more image processing capabilities may be provided so that the operability of this apparatus is enhanced. | 12-03-2009 |
20100027957 | Motion Picture Reproduction Apparatus - In a motion picture reproduction apparatus, a picture decoding unit decodes picture coded data read out of a storage unit and a reproduction information extraction unit extracts reproduction information such as motion vector, brightness and color difference information to utilize it as a parameter for selection of additional motion picture. An additional motion picture pattern production unit reads out an additional motion picture pattern associated with the reproduction information from an additional motion picture pattern storage unit and the additional motion picture pattern is combined with reproduced motion picture in a reproduced motion picture combining unit to be outputted to a monitoring unit through a display unit, so that additional motion picture different for each reproduction can be combined and displayed in accordance with the reproduced motion picture. | 02-04-2010 |
20100329640 | Recording/Reproducing Apparatus - A recording/reproducing apparatus, for enabling recording/reproducing of a three-dimensional (3D) video stream, by taking a display environment into the consideration thereof, comprises: a stream distinguishing means for distinguishing the three-dimensional (3D) video stream; a 3D/2D stream converting for converting the three-dimensional (3D) video stream distinguished by the stream distinguishing means into a two-dimensional (2D) video stream; and a conversion indicating means for indicating to execute the 3D/2D conversion, wherein the three-dimensional (3D) video stream is converted into the two-dimensional (2D) video stream by the 3D/2D stream means, when the 3D/2D conversion is indicted in the conversion indicating means. | 12-30-2010 |
20110235929 | METHOD AND APPARATUS FOR IMAGE ENCODING - An image encoding method for encoding an image using intra coding and interframe coding is offered. A refreshing area in which image refreshing is performed by intra coding is established. The refreshing area is shifted in an equal increment every frame such that the refreshing area traverses through the whole frame periodically. Where a macroblock that have passed through the refreshing area is interframe coded, a motion compensation vector of the macroblock is selected such that an image which has passed through the refreshing area is referenced. | 09-29-2011 |
20110242296 | STEREOSCOPIC IMAGE DISPLAY DEVICE - A stereoscopic image display device, for outputting left and right two (2) pieces of output videos, by superimposing an OSD (On Screen Display) on left and right two (2) pieces of output images, comprises: a disparity correction portion for correcting disparity of the input images, thereby outputting corrected images; and an OSD superimpose for superimposing the OSD on each of the corrected image, thereby outputting output images, wherein correction is made in such that the disparity of the corrected images in jumping out direction comes to be small, when displaying the OSD, and thereby lightening visual fatigue due to the fact that an object on the input image is seen in front than the OSD. | 10-06-2011 |
20110243468 | IMAGE CODING APPARATUS - A refresh area is taken advantage of when a series of images are coded using Intra-frame coding and Inter-frame coding, a partial area of an image being forcefully Intra-frame coded (Intra MBs) in the refresh area. As the prediction mode for prediction of the Intra MBs inside the refresh area, a prediction mode is selected where the prediction is executable based on only the image that exists inside the refresh area. | 10-06-2011 |
20110247033 | VIDEO TRANSMISSION DEVICE, VIDEO RECEPTION DEVICE, AND VIDEO COMMUNICATION SYSTEM - A video communication system having: an encoder coding input video data and outputting a video stream; and a packet processing part grouping into packets the output video stream from said encoder and outputting the same to a communication path; wherein said packet processing part generates an original data cluster consolidating a packet for each group of a prescribed number of MB processes and redundant data for correcting data errors of said original data cluster; and controls the insertion quantity of redundant data so that the combined number of bits of said original data cluster and said redundant data works out to be equal to or less than the target number of bits. | 10-06-2011 |
20130287122 | VIDEO TRANSMISSION DEVICE, VIDEO TRANSMISSION METHOD, VIDEO RECEIVING DEVICE, AND VIDEO RECEIVING METHOD - A video transmission device comprising: a reference signal generation unit which generates a reference signal based on time information; an imaging unit which images a video signal based on the reference signal generated by means of the reference signal generation unit; a compression unit which performs digital compression encoding of the video signal imaged by means of the imaging unit; a network processing unit which receives, from a network, time information and phase information about a reference signal in regard to the time information and, also, transmits the digital compression encoded video signal; and a control unit which controls the reference signal generation unit and the network processing unit. Here, the control unit modifies the phase of the reference signal generated with the reference signal generation unit in response to the time information and the phase signal received with the network processing unit. | 10-31-2013 |
Patent application number | Description | Published |
20080282976 | Film formation apparatus and method for using the same - A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements. | 11-20-2008 |
20090029562 | Film formation method and apparatus for semiconductor process - A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film. | 01-29-2009 |
20090124077 | Method for forming poly-silicon film - A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate. | 05-14-2009 |
20090233454 | FILM FORMATION APPARATUS FOR SEMICONDUCTOR PROCESS AND METHOD FOR USING SAME - A method for using a film formation apparatus includes, in order to inhibit metal contamination: performing a cleaning process using a cleaning gas on an inner wall of a process container and a surface of a holder with no productive target objects held thereon; and then, performing a coating process of forming a silicon nitride film by alternately supplying a silicon source gas and a nitriding gas to cover with the silicon nitride film the inner wall of the process container and the surface of the holder with no productive target objects held thereon. | 09-17-2009 |
20100210094 | METHOD FOR USING APPARATUS CONFIGURED TO FORM GERMANIUM-CONTAINING FILM - A method for using an apparatus configured to form a germanium-containing film includes performing a first film formation process for forming a first product film containing germanium by CVD on a product target object placed inside a reaction container, a first cleaning process for etching the film formation by-product, a second cleaning process for removing residual germanium from inside the reaction container, and a second film formation process for forming a second product film containing no germanium by CVD on a product target object placed inside the reaction container, in this order. The second cleaning process is performed by exhausting gas from inside the reaction container with no product target object placed therein, supplying a second cleaning gas containing an oxidizing gas and hydrogen gas into the reaction container, and heating an interior of the reaction container thereby activating the second cleaning gas. | 08-19-2010 |
20100311251 | BATCH PROCESSING METHOD FOR FORMING STRUCTURE INCLUDING AMORPHOUS CARBON FILM - A batch processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber. | 12-09-2010 |
20110195580 | METHOD FOR FORMING LAMINATED STRUCTURE INCLUDING AMORPHOUS CARBON FILM - A method for forming a laminated structure including an amorphous carbon film on an underlying layer includes forming an initial layer containing Si—C bonds on a surface of the underlying layer, by supplying an organic silicon gas onto the underlying layer; and forming the amorphous carbon film by thermal film formation on the underlying layer with the initial layer formed on the surface thereof, by supplying a film formation gas containing a hydrocarbon compound gas onto the underlying layer. | 08-11-2011 |
20110309562 | SUPPORT STRUCTURE AND PROCESSING APPARATUS - A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows from the bottom to the top or from the top to the bottom, includes: a top plate portion; a bottom portion; and a plurality of support posts connecting the top plate portion and the bottom portion. A plurality of support portions for supporting the objects to be processed are formed in each support post along the longitudinal direction, and the pitch of the support portions is set larger on the downstream side than on the upstream side in the flow direction of the processing gas. The support structure can enhance the in-plane uniformity of the thickness of a film formed on a processing object. | 12-22-2011 |
20120238107 | PROCESSING METHOD FOR FORMING STRUCTURE INCLUDING AMORPHOUS CARBON FILM - A processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber. | 09-20-2012 |
Patent application number | Description | Published |
20100003445 | CYANINE COMPOUND AND OPTICAL FILTER AND OPTICAL RECORDING MATERIAL CONTAINING SAME - Disclosed is a cyanine compound represented by general formula (I) below. Also disclosed are an optical filter using the compound and an optical recording material. | 01-07-2010 |
20110135958 | SCHIFF BASE TYPE COMPOUND AND COLORING MATERIAL CONTAINING THE SAME - Disclosed are a compound that emits fluorescence, particularly in its solid state, and is suited to provide a color converting material with various improved performance properties over prior art and a light emitter, a color conversion filter, a color conversion device, and a photoelectric device each containing the compound; particularly a Schiff base type compound of formula (I) and a coloring material, a color conversion layer, a light absorbing layer, a color conversion filter, a light absorbing filter, a color-converting light-emitting device, and a photoelectric device each containing the compound. | 06-09-2011 |
20110152538 | OPTICAL FILTER - An optical filter containing at least one naphtholactam derivative represented by general formula (I), wherein X is oxygen or sulfur; R | 06-23-2011 |
20110155249 | DYE FOR PHOTOELECTRIC CONVERSION DEVICE AND PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device capable of improving conversion efficiency is provided. The photoelectric conversion device includes a work electrode, an opposed electrode, and an electrolyte-containing layer. In the work electrode, a metal oxide semiconductor layer supporting a dye is provided. The dye contains a cyanine compound that has a methine chain, an indolenine skeleton bonded with both ends of the methine chain, and anchor groups introduced to a nitrogen atom included in the indolenine skeleton. Electron injection efficiency to the metal oxide semiconductor layer is improved, and the dye is hardly exfoliated from the metal oxide semiconductor layer. | 06-30-2011 |
20120229017 | PENDANT-TYPE POLYMERIC COMPOUND, COLOR CONVERSION FILM USING PENDANT-TYPE POLYMERIC COMPOUND, AND MULTICOLOR EMISSION ORGANIC EL DEVICE - The present invention provides green and red conversion films capable of keeping a sufficient intensity of converted light over a long period, and a multicolor emission organic EL device which exhibits light-emitting properties stably over a long period. The present invention includes a pendant-type polymeric compound characterized in that the pendant-type polymeric compound contains at least one repeating unit represented by a general formula (1) and at least one repeating unit represented by a general formula (2), (6) or (7), wherein n/(m+n)=1/100 to 100/100 provided that the molar ratio of (1):(2), (6) or (7) is m:n. | 09-13-2012 |
20130147345 | COLOR CONVERSION FILTER - A color conversion filter contains at least one kind of squarylium dye that radiates fluorescence light, has a wavelength conversion capability, absorbs light in an unneeded wavelength region, radiates fluorescence light in a preferable wavelength region, and does not allow decrease in brightness, and thus is preferable for color conversion light-emitting devices, photoelectric conversion devices and the like. Specifically, the color conversion filter has an absorption having a high intensity in the range of 570 to 600 nm, and thus is preferable for use in a color conversion filter that radiates fluorescence light having a high intensity in the range of 600 to 780 nm. | 06-13-2013 |
20130252024 | SCHIFF BASE TYPE COLOR CONVERSION LAYER, LIGHT ABSORBING LAYER, AND FILTER - Disclosed are a compound that emits fluorescence, particularly in its solid state, and is suited to provide a color converting material with various improved performance properties over prior art and a light emitter, a color conversion filter, a color conversion device, and a photoelectric device each containing the compound; particularly a Schiff base type compound of formula (I) and a coloring material, a color conversion layer, a light absorbing layer, a color conversion filter, a light absorbing filter, a color-converting light-emitting device, and a photoelectric device each containing the compound. | 09-26-2013 |
20140003060 | LIGHT-DIFFUSING RESIN COMPOSITION AND LIGHT-DIFFUSING SHEET USING SAME | 01-02-2014 |
20140205198 | IMAGE ENCODING APPARATUS - An image encoding apparatus is provided which realizes an encoding process at a high bit rate without degradation in image quality at boundary parts within a picture. The image encoding apparatus | 07-24-2014 |
20140314145 | METHOD OF ENCODING PICTURE AND PICTURE ENCODING DEVICE - A buffering delay can be reduced and moving picture encoding in low delay is performed while deterioration of picture quality is minimized. | 10-23-2014 |
20150027542 | DYE FOR PHOTOELECTRIC CONVERSION DEVICE AND PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device that includes a work electrode, an opposed electrode, and an electrolyte-containing layer. In the work electrode, a metal oxide semiconductor layer supporting a dye is provided. The dye contains a cyanine compound that has a methine chain, an indolenine skeleton bonded with both ends of the methine chain, and anchor groups introduced to a nitrogen atom included in the indolenine skeleton. Electron injection efficiency to the metal oxide semiconductor layer is improved, and the dye is hardly exfoliated from the metal oxide semiconductor layer. | 01-29-2015 |
Patent application number | Description | Published |
20120164842 | TRENCH EMBEDDING METHOD AND FILM-FORMING APPARATUS - A trench embedding method includes forming an oxidization barrier film on a trench; forming an expandable film on the oxidization barrier film; embedding an embedding material that contracts by being fired on the trench; and firing the embedding material, wherein the forming of the oxidization barrier film includes: forming a first seed layer on the trench by supplying an aminosilane-based gas; and forming a silicon nitride film on the first seed layer, wherein the forming of the expandable film includes: forming a second seed layer on the silicon nitride film by supplying an aminosilane-based gas; and forming a silicon film on the second seed layer. | 06-28-2012 |
20120247511 | METHOD FOR CLEANING THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS - A method for cleaning a thin film forming apparatus by removing extraneous matter attached to an interior of the thin film forming apparatus after supplying a treatment gas into a reaction chamber of the thin film forming apparatus and forming a thin film on an object to be processed, the method including: supplying a cleaning gas including fluorine gas, hydrogen fluoride gas, and chlorine gas into the reaction chamber heated to a predetermined temperature to remove the extraneous matter. | 10-04-2012 |
20130109155 | METHOD OF FORMING SEED LAYER AND METHOD OF FORMING SILICON-CONTAINING THIN FILM | 05-02-2013 |
20130244399 | METHOD OF FORMING A LAMINATED SEMICONDUCTOR FILM - According to some embodiments of the present disclosures, a method of forming a laminated semiconductor film is constituted by alternately laminating first and second semiconductor films on an underlying film of each of a plurality of substrates to be processed. The method includes performing a first operation of forming the first semiconductor film and a second operation of forming the second semiconductor film until a predetermined number of laminated films are obtained. In the method, a film forming temperature in the first operation and a film forming temperature in the second operation are set to be equal to each other, and temperatures between the first and second operations are set to be constant. | 09-19-2013 |
20130288470 | IMPURITY DIFFUSION METHOD, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation | 10-31-2013 |
20130323915 | METHOD AND APPARATUS FOR FORMING SILICON FILM - A method of forming a silicon film includes a first film forming process, an etching process, a doping process, and a second film forming process. In the first film forming process, a silicon film doped with impurities containing boron is formed so as to embed a groove provided on an object to be processed. In the etching process, the silicon film formed in the first film forming process is etched. In the doping process, the silicon film etched in the etching process is doped with impurities containing boron. In the second film forming process, a silicon film doped with impurities containing boron is formed so as to embed the silicon film that is doped in the doping process. | 12-05-2013 |
20140283750 | BATCH-TYPE VERTICAL SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE HOLDER - A batch-type vertical substrate processing apparatus includes a processing chamber into which a substrate holder configured to stack and hold a plurality of target substrates in a height direction is inserted; and a plurality of flanges formed to protrude from an inner wall of the processing chamber toward an internal space of the processing chamber along a planar direction and configured to divide the interior of the processing chamber into a plurality of processing subspaces along the height direction, wherein the flanges include insertion holes through which the substrate holder is inserted, and diameters of the insertion holes are small at an upper side of the processing chamber and become gradually larger toward a lower side of the processing chamber. | 09-25-2014 |
20150037970 | Silicon Film Forming Method, Thin Film Forming Method and Cross-Sectional Shape Control Method - The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher. | 02-05-2015 |
20150037975 | METHOD AND APPARATUS FOR FORMING SILICON FILM - Provided is a method of forming a silicon film in a groove formed on a surface of an object to be processed, which includes: forming a first silicon layer on the surface of the object to be processed to embed the groove; doping impurities near a surface of the first silicon layer; forming a seed layer on the doped first silicon layer; and forming a second silicon layer containing impurities on the seed layer. | 02-05-2015 |
20150101532 | APPARATUS FOR FORMING SILICON-CONTAINING THIN FILM - Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer. | 04-16-2015 |
20150159295 | Amorphous Silicon Crystallizing Method, Crystallized Silicon Film Forming Method, Semiconductor Device Manufacturing Method and Film Forming Apparatus - There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystalize silicones contained in at least the second amorphous silicon film. | 06-11-2015 |