Jun Tamura
Jun Tamura, Kawasaki-Shi JP
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20100239950 | CATALYST LAYER-SUPPORTING SUBSTRATE, METHOD OF PRODUCING THE SAME AND FUEL CELL - A catalyst layer-supporting substrate includes a substrate and a catalyst layer. The catalyst layer includes a catalyst material and pores. The catalyst layer is formed on the substrate. The catalyst material has a layer or wire shape. A half-value width of a main peak of the catalyst material, as determined from X-ray diffraction spectrum of the catalyst layer, is 1.5° or more. A porosity of the catalyst layer is 30% or more. | 09-23-2010 |
20140015050 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device, a logic MOSFET and a switch MOSFET are formed in a high-resistance substrate. The logic MOSFET includes an epitaxial layer formed on the high-resistance substrate and a well layer formed on the epitaxial layer. The switch MOSFET includes a LOCOS oxide film formed on the high-resistance substrate, the LOCOS oxide film being sandwiched between trenches and thus having a mesa-shape in its upper part. The switch MOSFET further includes a buried oxide film and a SOI layer formed on the mesa-shape of the LOCOS oxide film. The upper surface of the mesa-shape of the LOCOS oxide film is positioned at the same height as the upper surface of the epitaxial layer. | 01-16-2014 |
Jun Tamura, Kanagawa-Ken JP
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20100003566 | PROTON-CONDUCTIVE INORGANIC MATERIAL FOR FUEL CELL AND FUEL CELL ANODE EMPLOYING THE SAME - The present invention aims to provide a fuel cell anode, a membrane electrode assembly and a fuel cell, so as to obtain high electric power. The fuel cell anode has an electrode catalyst layer, and the electrode catalyst layer comprises a supported catalyst comprises electrically conductive carriers and fine catalytic particles supported thereon, a proton-conductive inorganic oxide supporting SiO | 01-07-2010 |
Jun Tamura, Yokohama-Shi JP
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20080254974 | SUPPORTED CATALYST FOR FUEL CELL ELECTRODE - There is provided a supported catalyst which has an excellent catalyst performance and is stable against highly concentrated methanol. The supported catalyst for a fuel cell electrode comprises a carrier and a catalytic metal supported on the carrier, characterized in that the carrier is hydrophilic and a metal oxide capable of accelerating proton conduction is provided on at least a part of the surface of the hydrophilic carrier. | 10-16-2008 |
20090061276 | ANODE FOR FUEL CELL AND FUEL CELL USING THE SAME - This invention provides an anode for a fuel cell which can realize stable output for a long period of time, and a fuel cell using the anode for a fuel cell. The anode for a fuel cell comprises an electrode catalyst layer, the electrode catalyst layer comprising a supported catalyst comprising an electroconductive carrier material and catalyst fine particles supported on the electroconductive carrier material, a proton conductive inorganic oxide, and a proton conductive organic polymer binder, the weight ratio between the supported catalyst (C) and the proton conductive inorganic oxide (SA), W | 03-05-2009 |
20090081528 | SUPPORTED CATALYST FOR FUEL CELL, AND ELECTRODE AND FUEL CELL USING THE SAME - The present invention provides a supported catalyst excellent both in catalytic performance and in stability against concentrated methanol. The supported catalyst is used for an electrode of a fuel cell, and comprises catalytic metal particles supported on supports. The supports have hydrophilicity. On at least one part of the surface of the hydrophilic supports, particles of metal oxide super-strong acid are also supported. The metal oxide super-strong acid particles promote proton conduction. | 03-26-2009 |
20090257931 | METHOD OF RECOVERING NOBLE METALS AND RECOVERING SYSTEM FOR NOBLE METALS - A recovering method is provided, which includes contacting a solid component containing Ru with an aqueous solution to create a Ru compound, and causing the Ru compound to selectively elute in the aqueous solution. The aqueous solution is formed of at least one selected from the group consisting of aqueous solutions A, B, C, D, and E. The aqueous solution A comprises an acid and formic acid, alcohols, aldehydes, a compound having a hemiacetal structure or a compound having an acetal structure. The aqueous solution B comprises an acid and a compound which creates, in the coexistence thereof with the acid, formic acid, alcohols, aldehydes, a compound having a hemiacetal structure or a compound having an acetal structure. The aqueous solution C comprises an acid and sugars. The aqueous solution D comprises formic acid, and the aqueous solution E comprises oxalic acid. | 10-15-2009 |
20090325021 | CATHODE FOR FUEL CELL - A cathode for a fuel cell is provided, which includes an electrode catalyst layer. This electrode catalyst layer is constituted by a carried catalyst including a conductive carrier and catalytic fine particles carried on the conductive carrier, by a proton-conductive inorganic oxide containing an oxide carrier and oxide particles carried on a surface of the oxide carrier, and by a proton-conductive organic polymer binder. The carried catalyst is incorporated therein at a weight of W | 12-31-2009 |
Jun Tamura, Nirasaki City JP
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20090305480 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND STORAGE MEDIUM - A method of manufacturing a semiconductor device, including an interlayer insulating layer having a dielectric constant of about 1, includes at least one of hydrophobically modifying an interlayer insulating film for insulating lines from each other, before forming air gaps in the interlayer insulating film, and hydrophobically modifying the lines, after forming the air gaps in the interlayer insulating film. | 12-10-2009 |
20110240224 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber. | 10-06-2011 |
20110303643 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - The substrate processing apparatus includes a susceptor, which is connected to a high frequency power source and on which a substrate is held, an upper electrode plate facing the susceptor, and a processing space PS formed between the susceptor and the upper electrode, to perform a plasma etching process on the wafer by using plasma. The substrate processing apparatus includes a dielectric plate which covers a surface of the upper electrode plate, the surface of which faces the processing space PS, the upper electrode plate is divided into an inner electrode facing a center portion of the wafer and an outer electrode facing a circumferential portion of the wafer, the inner electrode and the outer electrode are electrically insulated from each other, and a second variable DC power source applies a positive DC voltage to the inner electrode and the outer electrode is electrically grounded. | 12-15-2011 |
20110318934 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed | 12-29-2011 |
20140048210 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed | 02-20-2014 |
20150144266 | SUBSTRATE PROCESSING APPARATUS - The substrate processing apparatus includes a lower electrode on which a substrate is capable of being held, a high frequency power source electrically connected to the lower electrode, an upper electrode facing the lower electrode, a plasma processing space being formed between the lower electrode and the upper electrode, wherein the upper electrode includes an inner upper electrode facing a center portion of the lower electrode and an outer upper electrode facing a circumferential portion of the lower electrode, the inner electrode and the outer electrode being electrically insulated from each other, a first direct current power source electrically connected to the inner upper electrode to apply a positive direct current voltage, and a dielectric member covering a bottom surface of the upper electrode, the dielectric member facing the lower electrode with the plasma processing space in-between. | 05-28-2015 |
Jun Tamura, Ohtsu-Shi JP
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20090256195 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device in which current flows in a vertical direction includes a structure that decreases resistance between a source electrode and a drain electrode along with a current path at a position different from a position having highest electric field intensity between the source electrode and the drain electrode. | 10-15-2009 |
Jun Tamura, Nirasaki-Shi JP
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20090146145 | PROCESSING CONDITION INSPECTION AND OPTIMIZATION METHOD OF DAMAGE RECOVERY PROCESS, DAMAGE RECOVERING SYSTEM AND STORAGE MEDIUM - A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference. | 06-11-2009 |
20130025537 | PROCESSING CONDITION INSPECTION AND OPTIMIZATION METHOD OF DAMAGE RECOVERY PROCESS, DAMAGE RECOVERING SYSTEM AND STORAGE MEDIUM - A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference. | 01-31-2013 |
Jun Tamura, Tokyo JP
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20080242576 | Probe cleaning sheet - A probe cleaning sheet for removing foreign objects attached to tip part of a probe is formed with a plastic sheet having a flat and even surface and a uniform thickness and a cleaning layer with a flat and even surface and a uniform thickness formed on the surface of this plastic sheet. The cleaning layer has viscoelastic properties. Its Young's modulus is 30 MPa or more and 700 MPa les less, its storage modulus at 25° C. is 1.2×10 | 10-02-2008 |
20090092023 | CLEANING TAPE AND METHOD OF PRODUCING SAME - A cleaning tape has a base tape made of a synthetic resin and a cleaning layer formed on a surface of this base tape. The cleaning layer has a binding agent and a large number of spherical particles dispersed in the binding agent in a single particle layer. Such a cleaning tape is capable of removing very small unwanted protrusions and particles on the surface of a target object such as a magnetic hard disk without forming scratches. | 04-09-2009 |
20090093192 | DEVICE FOR AND METHOD OF POLISHING PERIPHERAL EDGE OF SEMICONDUCTOR WAFER - A device for polishing the peripheral edge part of a semiconductor wafer includes a wafer stage for holding the wafer, a wafer stage unit including devices for rotating the wafer stage, causing the wafer stage to undergo a rotary reciprocating motion within the same plane as the surface of the wafer stage, and moving the wafer stage parallel to the surface, a notch polishing part for polishing the notch on the wafer and a bevel polishing part for polishing the beveled part of the wafer. Pure water is supplied to the wafer to prevent it from becoming dry as it is transported from the notch polishing part to the bevel polishing part. | 04-09-2009 |
20140156377 | SALES PROMOTION ASSISTING SYSTEM - Sales promotion assisting systems are disclosed. Such systems include a sales promotion assisting system in which specific incentive is retrieved by passing a portable terminal or the like over a predetermined terminal installed in a store such as an eating and drinking establishment. An incentive can be exchanged for an item or the like of application software such as a game, which can lead to sales promotion. | 06-05-2014 |
Jun Tamura, Akishima JP
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20080293332 | POLISHING PAD AND METHOD OF POLISHING - A circular polishing pad has grooves formed on the surface in a spiral pattern with its center point offset from the center of the pad. The spiral pattern is an Archimedean spiral pattern or a parabolic spiral pattern. A target object is polished by using such a polishing pad without oscillating the platen to which the polishing pad is pasted or the polishing head that holds the target object. | 11-27-2008 |
Jun Tamura, Shiga JP
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20080203472 | LATERAL MOSFET AND MANUFACTURING METHOD THEREOF - A lateral MOSFET according to the present invention has a trench gate structure having a cross sectional shape spreading toward an open end. | 08-28-2008 |
Jun Tamura, Nirasaki JP
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20110132873 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MEASURING DISTANCE BETWEEN ELECTRODES, AND STORAGE MEDIUM STORING PROGRAM - A distance between electrodes can be accurately measured by using a lifter. A substrate processing apparatus includes an upper electrode | 06-09-2011 |
Jun Tamura, Kawaguchi-Shi JP
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20120152633 | BRAKE EQUIPMENT OF VEHICLE WITH DRIVER SEAT WHOSE DIRECTION IS CHANGEABLE - A brake equipment of the driver-seat-direction changeable vehicle includes: a driver-seat-direction detector configured to detect whether the driver seat is facing the one or the other side, in the travel direction, of the wheel-side vehicle body; a braking unit configured to brake one-side wheels, which are located closer to the one side, in the travel direction, of the wheel-side vehicle body, and other-side wheels, which are located closer to the other side, in the travel direction, of the wheel-side vehicle body, while controlling brake-force distribution between brake forces of the one-side wheels and the other-side wheels in such a manner that the brake-force distribution becomes a set brake-force distribution based on ideal brake-force distribution characteristics; and a switching unit configured to change the set brake-force distribution in accordance with the direction of the driver seat detected by the driver-seat-direction detector. | 06-21-2012 |
Jun Tamura, Otsu-Shi JP
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20150249128 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first MOSFET and a second MOSFET that is monolithic-integrated with the first MOSFET on a high-resistance substrate. The first MOSFET includes a first semiconductor layer formed on the high-resistance substrate and a second semiconductor layer formed above the first layer. The second semiconductor layer serves as a well layer of the first MOSFET. The second MOSFET includes a first insulating layer formed on the high-resistance substrate and having a mesa-shape in its upper part, the mesa-shape being formed by being sandwiched between two trenches filled with an oxide film formed in the first semiconductor layer. A second insulating layers formed on the mesa-shape of the first insulating layer and a third semiconductor layer is formed on the second insulating layer, the third semiconductor layer serving as a well layer of the second MOSFET. | 09-03-2015 |
Jun Tamura, Minato-Ku JP
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20150252482 | PHOTOCHEMICAL REACTION DEVICE - According to one embodiment, a photochemical reaction device comprises a laminated body and an ion transfer pathway. A laminated body comprises an oxidation catalyst layer for producing oxygen and protons by oxidizing water a reduction catalyst layer for producing carbon compounds by reducing carbon dioxide and a semiconductor layer formed between the oxidation catalyst layer and the reduction catalyst layer and developing charge separation with light energy. An ion transfer pathway moves ions between the oxidation catalyst layer side and the reduction catalyst layer side. | 09-10-2015 |
Jun Tamura, Yokohama Kanagawa JP
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20150252483 | PHOTOCHEMICAL REACTION SYSTEM - According to one embodiment, a photochemical reaction system comprises a CO | 09-10-2015 |
Jun Tamura, Zama-Shi, Kanagawa JP
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20160052356 | SUSPENSION DEVICE FOR AN IN-WHEEL MOTOR DRIVEN WHEEL - A suspension device for an in-wheel motor driven wheel ensures a lever ratio and stroke of a shock absorber without setting the upper end portion of the shock absorber at a high position. A wheel driven by an in-wheel motor unit is suspended on a vehicle body via a suspension structure member and a shock absorber, the suspension structure member including an upper suspension arm pivotally supported with respect to the vehicle body, and a third link. The third link pivotally connects the upper suspension arm to the wheel while having a shock absorber connecting portion to which the lower end of the shock absorber is connected. Further, the shock absorber connecting portion is disposed in the vehicle bottom position lower than an upper end surface of the in-wheel motor unit. | 02-25-2016 |
20160052359 | SUSPENSION DEVICE FOR IN-WHEEL MOTOR DRIVEN WHEEL - A suspension device for an in-wheel motor driven wheel is provided. An upper suspension arm is pivotally supported on the vehicle body for supporting the wheel in a vehicle upper position higher than an axle. A link member pivotally connects the wheel to the upper suspension arm and has an absorber connecting portion connected to a lower end of the shock absorber. The shock absorber connecting portion is disposed in the vehicle bottom position lower than an upper end portion of the in-wheel motor unit. The shock absorber is disposed between the vehicle body and the in-wheel motor unit and inclined so as to be closer to the vehicle body toward the lower end. | 02-25-2016 |
Jun Tamura, Yokohama JP
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20160076158 | REDUCTION CATALYST AND CHEMICAL REACTOR - According to one embodiment, a reduction catalyst includes a charge collector having a metal layer on a surface; and a modified organic molecule bound to a surface of the metal layer and containing a quaternary nitrogen cation. | 03-17-2016 |
20160076159 | PHOTOCHEMICAL REACTION DEVICE AND THIN FILM - According to one embodiment, a photochemical reaction device according to the present embodiment includes an oxidation reaction portion that generates oxygen by oxidizing water, a reduction reaction portion that generates a carbon compound by reducing carbon dioxide and is arranged in a first solution containing amine molecules in which the carbon dioxide is absorbed, a semiconductor element that separates charges by light energy and is electrically connected to the oxidation reaction portion and the reduction reaction portion, and a thin film formed between the oxidation reaction portion and the first solution to inhibit transmission of the amine molecules from the first solution to the oxidation reaction portion. | 03-17-2016 |