Chiu, Kaohsiung City
Chien-Chih Chiu, Kaohsiung City TW
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20130123544 | COMPOSITION AND GINGER EXTRACT FOR PROMOTING PROLIFERATION AND/OR MIGRATION OF SKIN CELLS, AND PHARMACEUTICAL COMPOSITION USING THE SAME - A composition for promoting proliferation and/or migration of skin cells includes a compound of formula (I): | 05-16-2013 |
Chih Chiu, Kaohsiung City TW
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20130219746 | INSOLE WITH INDIVIDUAL ELASTIC COMPONENTS - An insole with individual elastic components has an elastic pad with a ventilative layer adhered to the top surface and a supporting block disposed at the heel region on the bottom surface. The elastic pad has first hollow elastic pillars in the foot-thenar region and second hollow elastic pillars in the foot-arch region, with both pillars extending from the bottom surface and having openings toward the top surface. The elastic pad is formed as a single body. The height of the first hollow elastic pillars and the second hollow elastic pillars is greater than the height of the supporting block so that ventilation and cushioning effects are provided to improve air circulation inside the shoe when the insole is pressed. | 08-29-2013 |
Chih-Hao Chiu, Kaohsiung City TW
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20090115160 | COLLAPSIBLE SCOOTER WITH TRI-FOOTBOARD - The present invention pertains to a collapsible scooter with tri-footboard providing with a supporting stem attached to the frame body and two steering pivots mounted to both sides thereof for respectively sliding toward a single direction. Further, two auxiliary footboard devices attached their front ends to the steering pivots and their rear ends to the rear wheels, so that the auxiliary footboard devices are positioned toward reverse directions through swinging the steering pivots. In this manner, the rider can alternatively ride the scooter by foot-propelling with the frame footboard or by wriggling rider's buttocks while treading on the auxiliary footboard devices so as to achieve dual operations. Also, the present invention is collapsible for easy storing and carrying and increases its convenience. | 05-07-2009 |
Chin Fu Chiu, Kaohsiung City TW
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20090250816 | ULTRA-THIN DIFFUSION-BARRIER LAYER FOR CU METALLIZATION - Diffusion barrier layer is required during copper metallization in IC processing to prevent Cu from diffusion into the contacting silicon material and reacting to form copper silicide, which consumes Cu and deteriorates electrical conduction. With decreasing feature sizes of IC devices, such as those smaller than 90 nano-meter (nm), the thickness of diffusion barrier layer must be thinner than 10 nm. For example, a thickness of 2 nm will be called for at the feature size 27 nm. Disclosed in the present invention is ultra-thin barrier materials and structures based on tantalum silicon carbide, and its composite with another metallic layer Ru film. The retarding temperature, by which no evidence of copper diffusion can be identified, is 600˜850° C. depending on thickness, composition and film structure, at a thickness 1.6˜5 nm. | 10-08-2009 |
Chun-Mao Chiu, Kaohsiung City TW
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20130134542 | DARK CURRENT REDUCTION FOR BACK SIDE ILLUMINATED IMAGE SENSOR - Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material. | 05-30-2013 |
20140322857 | Dark Current Reduction for Back Side Illuminated Image Sensor - A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material. | 10-30-2014 |
20150349009 | DARK CURRENT REDUCTION FOR BACK SIDE ILLUMINATED IMAGE SENSOR - A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material. | 12-03-2015 |
Han-Chin Chiu, Kaohsiung City TW
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20140014967 | Diffusion Barrier Layer for Group III Nitride on Silicon Substrate - The present disclosure is directed to an integrated circuit and its formation. In some embodiments, the integrated circuit includes a diffusion barrier layer. The diffusion barrier layer can be arranged to prevent diffusion of the Si and O | 01-16-2014 |
20140042446 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME - A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are in contact with the second III-V compound layer. A n-type doped region underlies each source feature and drain feature in the second III-V compound layer. A p-type doped region underlies each n-type doped region in the first III-V compound layer. A gate electrode is disposed over a portion of the second III-V compound layer between the source feature and the drain feature. | 02-13-2014 |
20140183598 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME - A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A dielectric passivation layer is disposed on the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer, and extend through the dielectric passivation layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. The gate electrode has an exterior surface. An oxygen containing region is embedded at least in the second III-V compound layer under the gate electrode. A gate dielectric layer has a first portion and a second portion. The first portion is under the gate electrode and on the oxygen containing region. The second portion is on a portion of the exterior surface of the gate electrode. | 07-03-2014 |
20140191240 | High Electron Mobility Transistor and Method of Forming the Same - A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is smaller than the first band gap. The HEMT further includes a third III-V compound layer having a third band gap over the second III-V compound layer, wherein the third band gap is greater than the first band gap. A gate electrode is formed over the third III-V compound layer. A source region and a drain region are over the third III-V compound layer and on opposite sides of the gate electrode. | 07-10-2014 |
20140209919 | METHOD OF IMPLANTING DOPANTS INTO A GROUP III-NITRIDE STRUCTURE AND DEVICE FORMED - A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopant and a second dopant, and the second dopant comprises a group V material. | 07-31-2014 |
20140231816 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME - A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is greater than the first band gap. A crystalline interfacial layer is overlying and in contact with the second III-V compound layer. A gate dielectric is over the crystalline interfacial layer. A gate electrode is over the gate dielectric. A source region and a drain region are over the second III-V compound layer, and are on opposite sides of the gate electrode. | 08-21-2014 |
20140319583 | High Electron Mobility Transistor and Method of Forming the Same - A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is greater than the first band gap. A crystalline interfacial layer is overlying and in contact with the second III-V compound layer. A gate dielectric is over the crystalline interfacial layer. A gate electrode is over the gate dielectric. A source region and a drain region are over the second III-V compound layer, and are on opposite sides of the gate electrode. | 10-30-2014 |
20150034957 | NORMALLY-OFF ENHANCEMENT-MODE MISFET - The present disclosure relates to an enhancement mode MISFET device. In some embodiments, the MISFET device has an electron supply layer located on top of a layer of semiconductor material. A multi-dielectric layer, having two or more stacked dielectric materials sharing an interface having negative fixed charges, is disposed above the electron supply layer. A metal gate structure is disposed above the multi-dielectric layer, such that the metal gate structure is separated from the electron supply layer by the multi-dielectric layer. The multi-dielectric layer provides fixed charges at interfaces between the separate dielectric materials, which cause the transistor device to achieve a normally off disposition. | 02-05-2015 |
20150060861 | GaN Misfets with Hybrid AI203 As Gate Dielectric - Some embodiments of the present disclosure relates to a hybrid gate dielectric layer that has good interface and bulk dielectric properties. Surface traps can degrade device performance and cause large threshold voltage shifts in III-N HEMTs. This disclosure uses a hybrid ALD (atomic layer deposited)-oxide layer which is a combination of H2O-based and O3/O2-based oxide layers that provide both good interface and good bulk dielectric properties to the III-N device. The H2O-based oxide layer provides good interface with the III-N surface, whereas the O3/O2-based oxide layer provides good bulk properties. | 03-05-2015 |
20150060873 | Crystalline Layer for Passivation of III-N Surface - Some embodiments of the present disclosure relates to a crystalline passivation layer for effectively passivating III-N surfaces. Surface passivation of HEMTs reduces or eliminates the surface effects that can otherwise degrade device performance. The crystalline passivation layer reduces the degrading effects of surface traps and provides a good interface between a III-nitride surface and an insulator (e.g., gate dielectric formed over the passivation layer). | 03-05-2015 |
20150087118 | METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR - A method of forming a high electron mobility transistor may include: forming a second III-V compound layer on a first III-V compound layer, the second III-V compound layer and the first III-V compound layer differing in composition; forming a p-type doped region in the first III-V compound layer; forming an n-type doped region in the second III-V compound layer, the n-type doped region overlying the p-type doped region; forming a source feature over the second III-V compound layer, the source feature overlying the n-type doped region; and forming a gate electrode over the second III-V compound layer, the gate electrode disposed laterally adjacent to the source feature. | 03-26-2015 |
20150123170 | HEMT-Compatible Lateral Rectifier Structure - The present disclosure relates to a high electron mobility transistor compatible power lateral field-effect rectifier (L-FER) device. In some embodiments, the rectifier device has an electron supply layer located over a layer of semiconductor material at a position between an anode terminal and a cathode terminal. A layer of doped III-N semiconductor material is disposed over the electron supply layer. A passivation layer is located over the electron supply layer and the layer of doped III-N semiconductor material. A gate structure is disposed over the layer of doped III-N semiconductor material and the passivation layer. The layer of doped III-N semiconductor material modulates the threshold voltage of the rectifier device, while the passivation layer improves reliability of the L-FER device by mitigating current degradation due to high-temperature reverse bias (HTRB) stress. | 05-07-2015 |
20150236121 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device comprising a substrate, a channel layer over the substrate, an active layer over the channel layer and a laminate layer in contact with the active layer. The active layer has a band gap discontinuity with the channel layer. | 08-20-2015 |
20150318387 | Sidewall Passivation for HEMT Devices - Some embodiments of the present disclosure relate to a high electron mobility transistor (HEMT) which includes a heterojunction structure arranged over a semiconductor substrate. The heterojunction structure includes a binary III/V semiconductor layer made of a first III-nitride material to act as a channel region of the e-HEMT, and a ternary III/V semiconductor layer arranged over the binary III/V semiconductor layer and made of a second III-nitride material to act as a barrier layer. Source and drain regions are arranged over the ternary III/V semiconductor layer and are spaced apart laterally from one another. A gate structure is arranged over the heterojunction structure and is arranged between the source and drain regions. The gate structure is made of a third III-nitride material. A first passivation layer is disposed about sidewalls of the gate structure and is made of a fourth III-nitride material. | 11-05-2015 |
20150364363 | VHF ETCH BARRIER FOR SEMICONDUCTOR INTEGRATED MICROSYSTEM - The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die. | 12-17-2015 |
Hsien-Hsueh Chiu, Kaohsiung City TW
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20120219645 | Chinese Herbal Aqueous Extract Having Anti-Anxiety Activities and Method of In Vitro Evaluating the Same - A Chinese herbal aqueous extract having anti-anxiety activities and a method of in vitro evaluating the same are disclosed. Neural cells and/or glial cells are cultured in a medium containing the Chinese herbal aqueous extract, and then subjected to an electric pulse treatment to form epileptic cells. The epileptic cells are applied on evaluation of at least one criterion of anti-anxiety activities of the Chinese herbal aqueous extract. | 08-30-2012 |
Hsin-Yuan Chiu, Kaohsiung City TW
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20160079938 | MODULATION METHOD FOR SWITCHING MODULATOR - An exemplary embodiment of the present disclosure illustrates a modulation method for a switching modulator. Firstly, a data signal is received. Then, a first output signal at a first output side of the switching modulator and a second output signal at a second output side of the switching modulator are generated according to the data signal received, wherein the first output signal is an addition signal of a first pulse signal and the data signal, the second output signal is a second pulse signal, the first pulse signal and the second pulse signal are aligned to a same pulse width, and the pulse width equals to a minimum resolution of the switching modulator. | 03-17-2016 |
Hsiu-Ching Chiu, Kaohsiung City TW
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20130101971 | Motor Coordination Testing Device - A motor coordination testing device is disclosed. The motor coordination testing device includes a signal generator and a signal retrieving device. The signal generator includes a first electronic protractor and a first support rotatably coupled with the first electronic protractor. The signal retrieving device is electrically connected to the signal generator. | 04-25-2013 |
Hsueh-Wei Chiu, Kaohsiung City TW
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20160112148 | LOW-COST TEST/CALIBRATION SYSTEM AND CALIBRATED DEVICE FOR LOW-COST TEST/CALIBRATION SYSTEM - A test/calibration system includes a device under test (DUT) and a calibrated device. The calibrated device is coupled to the DUT, transmits or receives a test signal to or from the DUT in response to a control signal for a test item to test, measure or calibrate functioning or performance of an internal component of the DUT. | 04-21-2016 |
Kuan-Lin Chiu, Kaohsiung City TW
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20140184441 | SYSTEM AND METHOD OF COLLABORATIVE POSITIONING CALIBRATION, AND METHOD OF DEPLOYING REFERENCE STATION - An embodiment disclosed a system for collaborative positioning calibration, comprising at least one reference station and at least one client. The reference station uses a known position and a satellite signal transmitted by at least one satellite to compute a pseudo-range difference of the reference station position and the satellite position, and then broadcasts an area calibration data including at least one pseudo-range difference to at least one client. Based on the area calibration data, the client computes at least one pseudo-range calibration data and outputs a calibrated position of global positioning system. | 07-03-2014 |
Kuo-Lin Chiu, Kaohsiung City TW
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20140139057 | STATOR MODULE AND MAGNETIC FIELD GENERATED STRUCTURE THEREOF - The disclosure provides a stator module and a magnetic field generated structure which includes a magnetizer and an electrically conducting pipe. The electrically conducting pipe is wound around the magnetizer and has a passage inside. The passage has an outlet and an inlet opposite to each other. The electrically conducting pipe has a current input portion and a current output portion. | 05-22-2014 |
Ming-Cheng Chiu, Kaohsiung City TW
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20110009588 | COUPLED POLYMERS AND MANUFACTURING METHOD THEREOF - A coupled copolymer is provided. The coupled copolymer is coupled by reacting a silane coupling agent with a copolymer, where the copolymer is polymerized by a conjugated diene monomer and a vinyl aromatics monomer, and the silane coupling agent has an alkenyl group and a alkoxy group, and has a chemical Formula (I) as follows: | 01-13-2011 |
20110105694 | HYDROGENATION CATALYST COMPOSITION AND HYDROGENATION METHOD THEREOF - A hydrogenation catalyst composition for hydrogenating a polymer of conjugated diene is provided. The polymer of conjugated diene is a homopolymer of conjugated diene or a copolymer of conjugated diene and vinyl aromatics. The hydrogenation catalyst composition includes: (a) a titanium compound, (b) a compound of formula (II), | 05-05-2011 |
Pei-Cheng Chiu, Kaohsiung City TW
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20100039246 | REMOTE CONTROL FOR AUTOMOBILE TRUNK - A remote control is provided for an automobile trunk and includes a trunk lock that is selectively driven by a power unit for unlocking and a control device controlling the power unit, wherein the control device is coupled to an anti-burglary host device that is originally installed in the automobile or various anti-burglary devices controlled thereby, whereby operating the anti-burglary devices of the automobile by a remote control emitter of the automobile-originally-equipped anti-burglary host device can be preserved and remote controlled operation of the automobile trunk by means of the remote control emitter of the automobile-originally-equipped anti-burglary host device can be realized to thereby enhance the operability of the automobile trunk. | 02-18-2010 |
20100254034 | AUTOMATIC ADJUSTMENT DEVICE FOR AUTOMOBILE SIDEVIEW MIRROR - An automobile adjustment device is provided for a sideview mirror of an automobile. The automatic adjustment device includes at least one main controller and a sensor element. The sensor element includes a microprocessor and is connected to a signal source of shift stick reverse position and signal sources of turn signal lights and is also connected to a drive unit of the sideview mirror. The sensor element is connected to the main controller to detect and transmit a parameter representing an angular position of the sideview mirror to the microprocessor of the main controller with which the microprocessor makes judgment. | 10-07-2010 |
20100332084 | AUXILIARY CONTROL SYSTEM AND METHOD TO A MOTOR VEHICLE'S BUILT-IN ANTI-THEFT SYSTEM - The auxiliary control system contains at least a first interaction device and a second interaction device that are capable of mutually detecting the presence of each other by a wireless means. The first interaction device is carried by a driver of a motor vehicle having a built-in anti-theft system, and the second interaction device is tapped into a Main Body ECU in parallel with the original control interface of the built-in anti-theft system. As such, when the driver carrying the first interaction device enters into or moves out of an effective sensing range from the motor vehicle, the second interaction device would detect the presence or absence of the first interaction device. The second interaction device then issues appropriate deactivating or activating signals to the Main Body ECU which in turn disarms or arms the various anti-theft means of the motor vehicle. | 12-30-2010 |
20110037577 | REMOTE-CONTROLLED VEHICLE GEAR STICK LOCKING DEVICE - A remote-controlled vehicle gear stick locking device includes a gear stick lock and a control host. The gear stick lock is driven by a power unit that is controlled by the control host to carry out locking and unlocking operations. The control host is coupled to an alarm host of a theft alarm device built in the vehicle. Thus, the original function of a remote control emitter of a vehicle theft alarm device for setting and releasing release various anti-theft alarming equipments of the vehicle is preserved, while the remote control emitter of the vehicle theft alarm device can also be used in remote control of locking and unlocking operations of the gear stick lock, so as to upgrade the performance of the gear stick lock for improving operability and security for anti-theft of the vehicle. | 02-17-2011 |
Pin Hung Chiu, Kaohsiung City TW
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20090039483 | HEAT SLUG AND SEMICONDUCTOR PACKAGE - A heat slug includes a heat spreading member and a supporting member. The supporting member extends outwardly from the edge of the heat spreading member. The tips of the supporting member are formed with a plurality of contact portions, wherein each said contact portion has a bottom face inclined to the surface of the chip carrier at an angle of more than 5 degrees. The present invention further provides a semiconductor package. | 02-12-2009 |
Pin-Tang Chiu, Kaohsiung City TW
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20150333400 | MULTI-BAND ANTENNA - A multi-band antenna comprises a single-pole radiating portion and a coupling radiating portion coupled to a grounding terminal. The single-pole radiating portion has a first radiating unit and a fourth radiating unit coupled to a feeding terminal. The single-pole radiating portion is bent to form a second radiating unit and a third radiating unit. The coupling radiating portion has a fifth radiating unit, and the coupling radiating portion is bent to form a sixth radiating unit. The sixth radiating unit of the coupling radiating portion and the third radiating unit of the single-pole radiating portion are coupled to each other to generate a LTE technology band near 700 MHz. The fifth radiating unit of the coupling radiating portion, the third radiating unit and the fourth radiating unit of the single-pole radiating portion are coupled to each other to generate a high frequency band. | 11-19-2015 |
Po-Lin Chiu, Kaohsiung City TW
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20100207349 | SCOOTER WITH AUXILIARY ASSEMBLY - A scooter with auxiliary assembly comprises a frame, a steering rod pivoted on the frame, a front wheel pivoted on the steering rod, a drive assembly fixed on the frame, and rear wheels pivoted on the frame and driven by the drive assembly. At least one pedal is pivoted on the frame, an elastic body connected the pedal and the frame, and at least one transmission assembly actuated by the pedal to rotate the rear wheels; wherein, the scooter has an auxiliary assembly that includes at least one supporter extended from the frame and at least one auxiliary wheel pivotally coupled to the supporter; the auxiliary wheel gets away from the ground due to the rear wheels while laying the scooter on the ground and properly contacts with the ground when the scooter is slant aside in time of forwarding. | 08-19-2010 |
20110089656 | MANUAL-SWINGING SCOOTER - A manual-swinging scooter includes a steering stem with a handle, a fixture extending therefrom, two main frames with treadles outwardly extending from the fixture, and a wheel assembly connected to the fixture and the main frames, respectively. A swingable assembly pivotally disposed between each main frame and frame wheel has a support seat vertically coupled to the main frame, a base with a bevel surface inclinably disposed on the support seat, a rotary shaft pivoting to the support seat, a connecting shaft respectively engaged with the rotary shaft and the frame wheel, and a brace disposed on the connecting shaft for slidably propping against the bevel surface and for the connecting shaft to swing relative to the bevel surface. | 04-21-2011 |
Sung-Mao Chiu, Kaohsiung City TW
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20140186640 | ANTI-ADHESION TRANSPARENT THIN FILM AND METHOD FOR FORMING THE SAME - The present invention provides an anti-adhesion transparent thin film, which uses physical vapor deposition to deposit a transparent thin film on the surface of a substrate. The transparent film has the characteristics of high light perviousness, good hardness, excellent acid resistivity, and superior anti-adhesion capability. Furthermore, an oxide layer can be formed between the surface of the substrate and the transparent thin film for improving the stability of the transparent thin film adhering to the surface of the substrate. In addition, the process temperature according to the present invention is less than 100; and the transparent thin film according to the present invention requires no metal- or fluorine-containing precursor. Thereby, the costs for industrial applications can be reduced substantially. It is also suitable for the substrates with less temperature tolerance such as metal, nonmetal, and polymer-like substrates. Hence, the applicable industries are extensive. | 07-03-2014 |
Wei-Gan Chiu, Kaohsiung City TW
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20130330482 | CARBON-DOPED SILICON NITRIDE THIN FILM AND MANUFACTURING METHOD AND DEVICE THEREOF - The present invention relates to carbon-doped silicon nitride thin film and forming method and device thereof The carbon-doped silicon nitride thin film is prepared by using a precursor having at least one of bis(dimethylamino)diethylsilane, N,N-Dimethyltrimethylsilylamine and a cyclic structure with a N—Si bond. The method for forming a carbon-doped silicon nitride thin film includes: providing a precursor having at least one of bis(dimethylamino)diethylsilane, N,N-Dimethyltrimethylsilylamine and a cyclic structure with a N—Si bond to form the carbon-doped silicon nitride thin film. The device for forming the carbon-doped silicon nitride thin film includes a reactor and a container with the aforementioned precursor coupled to the reactor. | 12-12-2013 |
Wei-Lan Chiu, Kaohsiung City TW
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20160046099 | PREFERABLY ORIENTED NANOTWINNED AU FILM, METHOD OF PREPARING THE SAME, AND BONDING STRUCTURE COMPRISING THE SAME - The present invention is related to a preferably oriented nanotwinned Au film, a method of preparing the same, and a bonding structure comprising the same. The nanotwinned Au film has a thickness direction. The nanotwinned Au film is stacked along a [220] crystallographic axis orientation in the thickness direction. At least 50% by volume of the nanotwinned Au film is composed of a plurality of nanotwinned Au grains which are adjacent to each other, arranged in a direction perpendicular to the thickness direction, and stacked along a [111] crystallographic axis orientation. | 02-18-2016 |
Yao-Min Chiu, Kaohsiung City TW
Yi-Hsiang Chiu, Kaohsiung City TW
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20140204175 | IMAGE CONVERSION METHOD AND MODULE FOR NAKED-EYE 3D DISPLAY - An image conversion method for naked-eye 3D display includes: an image receiving step to receive a 2D image data having a depth information; a sub-pixel arrangement receiving step to receive a sub-pixel arrangement data which is corresponding to a 3D display apparatus and includes a plurality of views; a view ascertaining step to ascertain the view corresponding to at least a sub-pixel of a plurality of sub-pixels by the sub-pixel arrangement data; and a sub-pixel data searching step to search a sub-pixel data of the sub-pixel at the ascertained view from the 2D image data by the depth information. Thereby, the sub-pixel data of these sub-pixels constitute a 3D image data for displaying. | 07-24-2014 |
Yi-Jen Chiu, Kaohsiung City TW
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20150036383 | BACKLIGHT MODULE - A frame structure for a back light module includes a horizontal base plate, a vertical back plate that has a bottom end connected to an upper side of the base plate, and an elongated horizontal through hole formed in a predetermined zone between ⅓ and ¼ of a vertical height of the back plate from the bottom end, and a heat sink that extends from the upper side of the base plate and that has a top end which is below a bottom end of the horizontal through hole. The backlight module further includes a light source disposed on the upper side of the base plate and a light guiding plate disposed to correspond in position to the light source for receiving light emitted from the light source. | 02-05-2015 |
Ying-Chen Chiu, Kaohsiung City TW
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20130244544 | PROCESS CONTROL METHODS FOR CMP (CHEMICAL MECHANICAL POLISHING) AND OTHER POLISHING METHODS USED TO FORM SEMICONDUCTOR DEVICES - A method for controlling device feature sizes produced by polishing operations such as chemical mechanical polishing (CMP) is provided. The method includes instituting process controls to control the processing operations used in combination to produce features of a metal layer with a desired thickness, based on the thickness of the previous metal layer or layers. A target thickness for first and second metal layers is established. After the first metal layer is produced and the difference between the first metal target thickness and the actual first metal thickness is determined, the target thickness for the second metal features is adjusted. Once the target thickness for the second metal features is adjusted, each of the processing operations used to produce the second metal layer is controlled in combination to produce the second metal features with the adjusted target thickness. | 09-19-2013 |
Yi-Te Chiu, Kaohsiung City TW
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20120230086 | STATIC RANDOM ACCESS MEMORY CELL AND METHOD OF OPERATING THE SAME - A static random access memory cell includes a latch unit. The latch unit includes a bi-inverting circuit and a switching circuit. The bi-inverting circuit has a first terminal and a second terminal. The switching circuit is electrically connected between the first terminal and the second terminal, wherein when the switching circuit is turned on, the switching circuit forms a feedback between the first terminal and the second terminal for latching the latch unit; and when the switching circuit is turned off, the feedback is removed to cause the SRAM cell to write a data bit to the latch unit. | 09-13-2012 |
Yi-Wei Chiu, Kaohsiung City TW
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20150228472 | Sacrificial Oxide With Uniform Thickness - A semiconductor device includes a silicon-based substrate, a gate structure and a laminated sacrificial oxide layer. The gate structure is on the silicon-based substrate. The laminated sacrificial oxide layer has a first portion on the silicon-based substrate and a second portion conformal to the gate structure, in which a first thickness of the first portion is substantially the same as a second thickness of the second portion. The laminated sacrificial oxide layer includes a native oxide layer and a silicon oxy-nitride layer. The native oxide layer is on the silicon-based substrate and conformal to the gate structure. The silicon oxy-nitride layer is conformal to the native oxide layer. | 08-13-2015 |
20150340361 | SACRIFICIAL OXIDE WITH UNIFORM THICKNESS - A semiconductor device includes a silicon-based substrate, a gate structure and a laminated sacrificial oxide layer. The gate structure is on the silicon-based substrate. The laminated sacrificial oxide layer has a first portion on the silicon-based substrate and a second portion conformal to the gate structure, in which a first thickness of the first portion is substantially the same as a second thickness of the second portion. The laminated sacrificial oxide layer includes a native oxide layer and a silicon oxy-nitride layer. The native oxide layer is on the silicon-based substrate and conformal to the gate structure. The silicon oxy-nitride layer is conformal to the native oxide layer. | 11-26-2015 |
Yu-Hsien Chiu, Kaohsiung City TW
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20150261925 | AVATAR-BASED CHARTING METHOD AND SYSTEM FOR ASSISTED DIAGNOSIS - An avatar-based charting method for assisted diagnosis to improve the efficiency of medical practice. Through an anthropomorphic symptom record interface, the first page is the Genetic-Psycho-Social-Bio (GPSB) which assists in understanding the genetic, psychological, social-environmental, and biological characteristics of patients. A Subjective-Objective-Assessment-Plan (SOAP) diagnosis page aids in doctor diagnosis. A decision support diagnostic summary interface automatically generates the diagnosis summary and notifies of any unusual circumstances. Finally, a medical records module saves all information into a medical database in order to provide health care for subsequent tracking and evaluation. | 09-17-2015 |
Yu-Kong Chiu, Kaohsiung City TW
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20130002428 | HIDDEN BURGLAR ALARM DEVICE FOR A DOOR OR WINDOW - A hidden burglar alarm device for a door or window includes a casing, an alarm mechanism mounted in the casing, a separator detachably inserted into the casing, a magnetic set detachably connecting the separator to the casing, a connector connected with the separator, a ballast fixed on the connector and a flexible wire connected with the ballast. The alarm mechanism includes an alarm member and a trigger connected with the alarm member. The separator selectively abuts against the trigger. The magnetic set includes a metallic object fixed on the separator and a magnet portion fixed on the casing for magnetically attracting the metallic object. The connector has two ends respectively fixed on the separator and the ballast. The flexible wire has two ends respectively fixed on the ballast and a door or window. | 01-03-2013 |
Yu-Lun Chiu, Kaohsiung City TW
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20090129444 | Multi-code multicarrier code division multiple access system in frequency-selective fading channels - The present invention relates to a multi-code multicarrier code division multiple access system in frequency-selective fading channels. According to the present invention, the transmitting device thereof uses the mapping/spectrum-spreading units to receive the plurality of substreams, map and spread the plurality of substreams, and produce a plurality of biorthogonal keying data items. The plurality of repetition units receives the plurality of biorthogonal keying data items, respectively, repeats the plurality of biorthogonal keying data items, and produces the plurality of repeated data item. The shifting units shift the plurality of repeated data items, respectively, and produce a plurality of shifted data items. The shifted data items are orthogonal to each other. Thereby, the peak-to-average-power-ratio (PAPR) is lowered. | 05-21-2009 |
Yu-Sheng Chiu, Kaohsiung City TW
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20140145866 | DATA PROCESSING APPARATUS AND METHOD - A data processing apparatus and a data processing method thereof are provided. The data processing apparatus includes a register and a processor electrically connected to the register. The register is stored with a plurality of data. The plurality of data each includes a first sub-datum and a second sub-datum. The plurality of first sub-data corresponds to a first column and the plurality of second sub-data corresponds to a second column. The processor compresses the first sub-data by a first compression algorithm according to a first characteristic of the plurality of first sub-data and compresses the second sub-data by a second compression algorithm according to a second characteristic of the plurality of second sub-data. | 05-29-2014 |
20140164599 | WORKLOAD DISPATCH DEVICE AND WORKLOAD DISPATCH METHOD THEREOF - A workload dispatch device and a workload dispatch method thereof are provided. The workload dispatch device comprises a monitor, a processor and a dispatcher. The monitor is configured to monitor operating conditions of a plurality of servers. The processor is electrically connected to the monitor and configured to execute the following operations: creating an average performance index table for a plurality of algorithms according to the operating conditions of the servers; normalizing the average performance index table; calculating a benchmark for each of the algorithms according to the normalized performance index table and a corresponding weighting table; and choosing a candidate algorithm from the algorithms according to the benchmarks. The dispatcher is electrically connected to the processor and configured to dispatch a workload to the plurality of servers according to the candidate algorithm. | 06-12-2014 |
20150149130 | POWER CONSUMPTION PREDICTION APPARATUS, METHOD, AND NON-TRANSITORY COMPUTER READABLE STORAGE MEDIUM THEREOF - A power consumption prediction apparatus, method, and non-transitory computer readable storage medium thereof are provided. The power consumption prediction apparatus receives a plurality of power consumption data of an appliance, wherein the power consumption data have a temporal sequence. Each power consumption datum includes a recorded status and a recorded time length, wherein each recorded status is one of a plurality operation statuses of the appliance. The power consumption prediction apparatus calculates an average operation time length of each operation status according to the recorded statuses and the recorded time lengths and calculates at least one transferring probability of each operation status according to the temporal sequence and the power consumption data. Each transferring probability is the probability of entering into a target status from a source status, wherein the source status is one of the operation statuses and the target status is one of the operation statuses. | 05-28-2015 |