Kanarsky
Albert Vladimirovich Kanarsky, Voljzsk RU
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20100189856 | Compositions and methods for decontamination of animal feed containing mycotoxins typical for both Northern and Southern climates - Mycotoxins prevailing in Northern climates have been until now proven difficult to deactivate in animal feed by binding, in contrast to mycotoxins prevailing in the Southern climates. Meanwhile, both types of toxins present a considerable risk factor for agricultural animal health and performance. A method of adsorbing and rendering harmless for animals an expanded range of both Northern and Southern mycotoxins found in contaminated feed is proposed. According to the invention, a combination of modified plant ligno-polysaccharide material and traditional mycotoxin binding components is added to the feed of agricultural and companion animals in an amount sufficient to abate the negative effects of both types of mycotoxins present. | 07-29-2010 |
Albert Vladimirovich Kanarsky, Volzhsk RU
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20120027747 | Compositions and methods for mycotoxin decontamination of animal feed, food, soil and plants using biomass of filamentous fungi and its selected components - A method of rendering harmless mycotoxins contaminating food, animal feed and assisting infection of plant hosts by microbial parasites is proposed. The method comprises binding mycotoxins by a novel adsorbent, consisting partially or in full of the biomass of filamentous fungi or isolated fungal biomass components, such as chitin, chitozan and hyrdophobins, or fungal biomass enriched in its capacity to bind said mycotoxins using fungal species and strain selection, genetic engineering of fungi, modification of fungal fermentation conditions and downstream physical and chemical treatment of fungal biomass, such as milling or micronization in a dry state. The resulting adsorbent can bind a wide range of mycotoxins, including the ones difficult to bind (Ochratoxin, T-2, DON, NIV) using a current generation of mycotoxin adsorbents based on clay, resins, yeast and bacterial biomass. The adsorbent can be used as an animal feed additive, functional food additive and agricultural fungistatic/fungicide. | 02-02-2012 |
20120070516 | Mycotoxin binding food and feed additives and processing aids, fungistatic and bacteriostatic plant protecting agents and methods of utilizing the same - Method is proposed useful to render harmless mycotoxins that contaminate food, animal feed and assist infection of plant hosts by microbial parasites, comprising binding mycotoxins by a novel adsorbent, consisting partially or in full of plant lignocellulosic biomass or isolated biomass components, e.g., acid hydrolysis lignin, enzymatic hydrolysis lignin, coniferous and deciduous wood, bark and needle particles, rice hulls, used coffee grounds, apricot stone shells, almond, walnut, sunflower hulls, cocoa and peanut shells. The materials may be further improved through genetic modification of plants and physicochemical treatment of lignocellulosic biomass, such as micronization. The resulting adsorbent can bind wide range of mycotoxins, including, mycotoxins difficult to bind (Ochratoxin, T-2, Deoxynivalenol, Nivalenol). Ability of porous materials containing lignin to thermally collapse at melting can be used to irreversibly entrap mycotoxins by adsorbing them in a wet system and then closing lignin pore structure under high-temperature treatment, such as drying. | 03-22-2012 |
Maxim Kanarsky, Solon, OH US
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20090254155 | THERAPEUTIC EMITTER RETAINING DEVICE - A therapeutic device and related method of use are described. The device features a flexible member that includes one or more emitters of for example, electromagnetic radiation, thermal energy, magnetic fields, and/or electrical fields. The device can be readily attached and removed from a user's skin by sealingly contacting the flexible member upon a region of the user's body of interest to create a vacuum. The device may also impart other therapeutically beneficial results such as intensified blood circulation from formation of the vacuum along the user's skin, and can also be used for blood irradiation. | 10-08-2009 |
Thomas S. Kanarsky, Hopewell Junction, NY US
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20080303101 | DUAL STRESS MEMORIZATION TECHNIQUE FOR CMOS APPLICATION - A stress-transmitting dielectric layer is formed on the at least one PFET and the at least one NFET. A tensile stress generating film, such as a silicon nitride, is formed on the at least one NFET by blanket deposition and patterning. A compressive stress generating film, which may be a refractive metal nitride film, is formed on the at least one PFET by a blanket deposition and patterning. An encapsulating dielectric film is deposited over the compress stress generating film. The stress is transferred from both the tensile stress generating film and the compressive stress generating film into the underlying semiconductor structures. The magnitude of the transferred compressive stress from the refractory metal nitride film may be from about 5 GPa to about 20 GPa. The stress is memorized during an anneal and remains in the semiconductor devices after the stress generating films are removed, | 12-11-2008 |
20090189242 | METHOD FOR NON-SELECTIVE SHALLOW TRENCH ISOLATION REACTIVE ION ETCH FOR PATTERNING HYBRID-ORIENTED DEVICES COMPATIBLE WITH HIGH-PERFORMANCE HIGHLY-INTEGRATED LOGIC DEVICES - Disclosed are embodiments of a hybrid-orientation technology (HOT) wafer and a method of forming the HOT wafer with improved shallow trench isolation (STI) structures for patterning devices in both silicon-on-insulator (SOI) regions, having a first crystallographic orientation, and bulk regions, having a second crystallographic orientation. The improved STI structures are formed using a non-selective etch process to ensure that all of the STI structures and, particularly, the STI structures at the SOI-bulk interfaces, each extend to the semiconductor substrate and have an essentially homogeneous (i.e., single material) and planar (i.e., divot-free) bottom surface that is approximately parallel to the top surface of the substrate. Optionally, an additional selective etch process can be used to extend the STI structures a predetermined depth into the substrate. | 07-30-2009 |
20090242989 | COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR - In one embodiment, the invention is a complementary metal-oxide-semiconductor device with an embedded stressor. One embodiment of a field effect transistor includes a silicon on insulator channel, a gate electrode coupled to the silicon on insulator channel, and a stressor embedded in the silicon on insulator channel and spaced laterally from the gate electrode, where the stressor is formed of a silicon germanide alloy whose germanium content gradually increases in one direction. | 10-01-2009 |
20090298297 | DUAL STRESS MEMORIZATION TECHNIQUE FOR CMOS APPLICATION - A stress-transmitting dielectric layer is formed on the at least one PFET and the at least one NFET. A tensile stress generating film, such as a silicon nitride, is formed on the at least one NFET by blanket deposition and patterning. A compressive stress generating film, which may be a refractive metal nitride film, is formed on the at least one PFET by a blanket deposition and patterning. An encapsulating dielectric film is deposited over the compress stress generating film. The stress is transferred from both the tensile stress generating film and the compressive stress generating film into the underlying semiconductor structures. The magnitude of the transferred compressive stress from the refractory metal nitride film may be from about 5 GPa to about 20 GPa. The stress is memorized during an anneal and remains in the semiconductor devices after the stress generating films are removed. | 12-03-2009 |
20110183486 | TRANSISTOR HAVING V-SHAPED EMBEDDED STRESSOR - A semiconductor device and a method of making the device are provided. The method can include forming a gate conductor overlying a major surface of a monocrystalline semiconductor region and forming first spacers on exposed walls of the gate conductor. Using the gate conductor and the first spacers as a mask, at least extension regions are implanted in the semiconductor region and dummy spacers are formed extending outward from the first spacers. Using the dummy spacers as a mask, the semiconductor region is etched to form recesses having at least substantially straight walls extending downward from the major surface to a bottom surface, such that a substantial angle is defined between the bottom surface and the walls. Subsequently, the process is continued by epitaxially growing regions of stressed monocrystalline semiconductor material within the recesses. Then the dummy spacers are removed and the transistor can be completed by forming source/drain regions of the transistor that are at least partially disposed in the stressed semiconductor material regions. | 07-28-2011 |
Thomas Safron Kanarsky, Hopewell Junction, NY US
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20080254577 | Sectional Field Effect Devices and Method of Fabrication - A field effect device is disclosed which has a body formed of a crystalline semiconductor material and has at least one vertically oriented section and at least one horizontally oriented section. The device is produced in SOI technology by fabricating first a formation of the device in masking insulators, and then transferring this formation through several etching steps into the SOI layer. The segmented field effect device combines FinFET, or fully depleted silicon-on-insulator FETs, type devices with fully depleted planar devices. This combination allows device width control with FinFET type devices. The segmented field effect device gives high current drive for a given layout area. The segmented field effect devices allow for the fabrication of high performance processors. | 10-16-2008 |
20110062518 | finFETS AND METHODS OF MAKING SAME - A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates. | 03-17-2011 |
20110316081 | finFETS AND METHODS OF MAKING SAME - A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates. | 12-29-2011 |