Witters
Allen L. Witters, Las Vegas, NM US
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20080303348 | INTEGRATED MULTIPLE FUEL RENEWABLE ENERGY SYSTEM - A system for continuously generating baseload electrical energy entirely from renewable resources and transmitting the generated electrical energy to a transmission grid includes, in combination, a first energy generation device for continuously generating electrical energy output, which has a bio-mass fuel supply requirement for generating the electrical energy. One or more additional energy generation devices provide, as available, intermittent electrical and thermal energy for substituting, or supplementing, the electrical energy output of the first energy generation device, and for supplementing the fuel supply requirement for the first energy generation device. A switching device ensures a least-cost generation of baseload electrical energy from the generating system by selectively using the output of the first energy generation device or, as available, the one or more additional energy generation device for substituting, or supplementing, the electrical output of the first energy generation device, and selectively supplementing the fuel supply requirement of the first energy generation device providing, at a minimum, a baseload electrical energy output exclusively from renewable energy resources. A redundant supply of combustible bio-mass fuel assets are assured by a bio-mass harvesting and logistics system which supplies such fuels directly from the source to the first energy generation device for combustion. Effluent gasses containing CO | 12-11-2008 |
Daan Witters, Geetbets BE
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20140378339 | PATTERNING DEVICE - A novel miniaturized and highly automated method for the controlled printing of large arrays of nano- to femtoliter droplets is presented by actively transporting mother droplets over hydrophilic-in-hydrophobic micropatches. The proposed technology consists of single plate or double-plate devices where mother droplets can be actuated and hydrophilic-in-hydrophobic micropatches on one or both plates of the device where nano- to femtoliter droplets are printed. Due to the selective wettability of the more wettable hydrophilic micropatches in a hydrophobic matrix, large nano- to femtoliter droplet arrays are created when mother droplets are transported over these arrays. The parent droplets can be moved by different droplet actuation principles, for example, by using the principle of electrowetting-on-dielectric droplet actuation. We propose another method that uses two plates that are placed on top of each other while being separated by a spacer. One plate is dedicated to confirming and guiding of parent droplets by using hydrophilic patches in a hydrophobic matrix, while the other plate contains hydrophilic-in-hydrophobic arrays dedicated to the printing of nano- to femtoliter droplets. When the plate dedicated to parent droplet guiding is rotated over the plate dedicated to printing of nano- to femtoliter droplets, nano- to femtoliter droplets are dispensed inside the hydrophilic-in-hydrophobic array due to their selective wettability. All these proposed methods allow the parent droplets to be moved over the hydrophilic-in-hydrophobic arrays many times, providing unique advantages for performing bio-assays or miniaturized materials synthesis in nano- to femtoliter sized droplets. Upon the controlled evaporation of the dispensed droplets of solution, large arrays of the printed material can be generated on an automated way in seconds of time on a very flexible way. The method disclosed herein provides a distinct nano- to femtoliter droplet printing technique for a wide variety of applications such as protein- or cell-based bio-assays or printing of crystalline structures, suspensions of nanoparticles or components for microelectronics. | 12-25-2014 |
Davy Witters, Leuven BE
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20090220036 | DATA INTERFACE AND METHOD OF SEEKING SYNCHRONIZATION - The present invention provides for method of seeking synchronization at a data interface between a transmitting element and a receiving element, and to related transmitting and receiving elements of the interface, in which the clock frequency of both elements is the same but which exhibit a phase difference, also known as mesochronous clock domains, the method including the steps of, prior to data transfer at the interface, delivering a strobe signal generated at the transmitting element to the receiving element, generating a strobe signal at the receiving element and synchronizing the same to the strobe signal received from the transmitting element, and maintaining the synchronized strobe signal generated at the receiving element for the sampling of data appearing at the interface from the transmitting element. | 09-03-2009 |
Erwin Witters, Wilrijk BE
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20110314573 | SCREENING METHOD FOR IDENTIFYING GENES INVOLVED IN PLANT CELL CYCLE - The present invention relates to a method for screening proteins related to and/or involved in plant cell cycle. It further relates to proteins isolated with the method and the use of those proteins and/or the genes encoding those proteins for modulating plant yield and plant growth. | 12-22-2011 |
Kipp Witters, Reedsburg, WI US
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20150176095 | SHAFT FURNACE AND METHOD OF OPERATING SAME - A method of operating a shaft furnace includes inserting a mixture including anthracite coal and coke into a cavity defined by the furnace, and disposing a metal feedstock within the cavity. The method includes injecting natural gas at a natural gas flow rate and a first quantity of oxygen gas at a first oxygen gas flow rate into the cavity simultaneously through at least one burner. The method also includes driving a second quantity of oxygen gas at a supersonic oxygen gas flow rate into the cavity through at least one lance, wherein the supersonic oxygen gas flow rate is greater than the first oxygen gas flow rate. The method also includes combusting the mixture within the cavity to produce a stack gas, melting the metal feedstock to produce a melted metal material, and monitoring the stack gas to thereby operate the shaft furnace. A shaft furnace is also disclosed. | 06-25-2015 |
Liesbeth Witters, Linden BE
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20140377936 | Method for Forming a Strained Semiconductor Structure - The present disclosure relates to a method for forming a strained semiconductor structure. The method comprises providing a strain relaxed buffer layer, forming a sacrificial layer on the strain relaxed buffer layer, forming a shallow trench isolation structure through the sacrificial layer, removing at least a portion of an oxide layer on the sacrificial layer, etching through the sacrificial layer such that a portion of the strain relaxed buffer layer is exposed, forming the strained semiconductor structure on the exposed portion of the strain relaxed buffer layer. | 12-25-2014 |
20150076620 | METHOD FOR MANUFACTURING TRANSISTORS AND ASSOCIATED SUBSTRATE - The disclosed technology generally relates to semiconductor devices, and more particularly to different types of transistors having different channel materials. In one aspect, a method of fabricating a semiconductor device includes providing a substrate comprising a silicon substrate having a main surface oriented in a {100} crystal plane and having a notch oriented in a <100> direction. The method additionally includes forming a plurality of silicon protrusions in a first predetermined region by recessing portions of the main surface surrounding the silicon protrusions. The method additionally includes forming shallow trench isolation (STI) structures adjacent to the silicon protrusions to electrically isolate the silicon protrusions, thereby defining channel areas of a transistor of a first type. The method further includes removing at least upper portions of the silicon protrusions, thereby forming trenches between neighboring STI structures and filling the trenches with a III-V material. | 03-19-2015 |
Liesbeth Witters, Everberg BE
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20110084313 | Methods for Manufacturing Dense Integrated Circuits - One inventive aspect relates to a method for forming integrated circuits and circuits obtained therewith. The method of forming a circuit pattern in a device layer of a semiconductor substrate comprises decomposing the circuit pattern in two constituent orthogonal subpatterns. The method further comprises transferring the pattern of a first subpattern to a hard mask layer overlying the device layer. The method further comprises transferring the pattern of the other subpattern to a photosensitive layer overlying the patterned hard mask layer. The method further comprises patterning the device layer using the patterned hard mask layer and the patterned photosensitive layer as a mask. The method further comprises removing the patterned hard mask layer and the patterned photosensitive layer. Furthermore memory or logic circuits obtained using the above technique are described. | 04-14-2011 |
20130181301 | METHOD FOR MANUFACTURING A FIELD-EFFECT SEMICONDUCTOR DEVICE FOLLOWING A REPLACEMENT GATE PROCESS - A method of manufacturing a semiconductor device is disclosed. In one aspect, the method includes: forming a dummy gate over a substrate layer; forming first gate insulating spacers adjacent to sidewalls of the dummy gate and over the substrate layer, the first spacers having two sidewalls and two surface profiles where the sidewalls meet the substrate layer; forming a source and drain region using the surface profiles; forming second gate insulating spacers adjacent to the sidewalls of the first spacers and over the source and drain regions; removing the dummy gate and the first spacers, thereby forming a first recess; depositing a dielectric layer in the first recess along the side walls of the second spacers and over the substrate layer, thereby forming a second recess; and depositing a gate electrode in the second recess. | 07-18-2013 |
20130233238 | Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth - Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, the method may comprise providing a substrate comprising a first crystalline material, where the first crystalline material has a first lattice constant; providing a mask structure on the substrate, where the mask structure comprises a first level comprising a first opening extending through the first level (where a bottom of the first opening comprises the substrate), and a second level on top of the first level, where the second level comprises a plurality of second trenches positioned at a non-zero angle with respect to the first opening. The method may further comprise epitaxially growing a second crystalline material on the bottom of the first opening, where the second crystalline material has a second lattice constant different than the first lattice constant and defects in the second crystalline material are trapped in the first opening. | 09-12-2013 |
20140008730 | Complementary Metal-Oxide-Semiconductor Device Comprising Silicon and Germanium and Method for Manufacturing Thereof - Disclosed are complementary metal-oxide-semiconductor (CMOS) devices and methods of manufacturing such CMOS devices. In some embodiments, an example CMOS device may include a substrate, and a buffer layer formed on the substrate, where the buffer layer comprises Si | 01-09-2014 |
20140061735 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A method for manufacturing a transistor device is provided, the transistor device comprising a germanium based channel layer, the method comprising providing a gate structure on the germanium comprising channel layer provided on a substrate, the gate structure being provided between a germanium based source area and a germanium based drain area at opposite sides of the germanium comprising channel layer; providing a capping layer on the germanium based source and the germanium based drain area, the capping layer comprising Si and Ge; depositing a metal layer on the capping layer; performing a temperature step, thereby transforming at least part of the capping layer into a metal germano-silicide which is not soluble in a predetermined etchant adapted for dissolving the metal; selectively removing non-consumed metal from the substrate by means of the predetermined etchant; and providing a premetal dielectric layer. | 03-06-2014 |
Liesbeth Witters, Everburg BE
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20140045315 | METHODS FOR MANUFACTURING A FIELD-EFFECT SEMICONDUCTOR DEVICE - A method of fabricating a field-effect transistor is disclosed. In one aspect, the method includes forming a channel layer comprising germanium over a substrate. The method additionally includes forming a gate structure on the channel layer, where the gate structure comprises a gate layer comprising silicon, and the gate layer has sidewalls above a surface of the channel layer. The method additionally includes forming sidewall spacers comprising silicon dioxide on the sidewalls by subjecting the gate structure to a solution adapted for forming a chemical silicon oxide on materials comprising silicon. The method further includes forming elevated source/drain structures on the channel layer adjacent to the gate structure by selectively epitaxially growing a source/drain material on the channel layer. | 02-13-2014 |
Steven Witters, Lagrange, KY US
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20140272860 | DECISION SUPPORT TOOL FOR USE WITH A MEDICAL MONITOR-DEFIBRILLATOR - Work flows are modeled as a graph of interdependent tasks to be performed. The tasks to be performed are set by a task file module configured to enable interactions between tasks and including modules for event viewing, protocol assistance, smart messaging, smart indices, reference material lookup. A decision support manager module is configured to construct data and model profiles for storage in a data and model profile bank, events for storage in a decision support events bank, and protocols for storage in a decision support protocol bank. Configuration files are provided to specify a configuration for execution of one of the tasks. Data entered through a user interface or from a network via a wireless or wired communication module may define task files in the task files module, configuration files in the configuration files module, as well as data, events, and protocols to be used for a defibrillation procedure. A decision support manager module is configured to construct a dependency graph of tasks as specified in at least one of the configuration files and to execute the dependency graph. | 09-18-2014 |
20140277227 | MEDICAL MONITOR-DEFIBRILLATOR WITH DEFIBRILLATOR AND DATA OPERATIONS PROCESSORS - A defibrillator is provided with two processors for enhancing the defibrillation process. A first processor is dedicated to controlling when an electrical charge is applied to a patient. A second processor is dedicated to data operations for enhancing the coaching of the defibrillation process. The second data processor is in communication with one or more external devices for transmission and receipt of network data for further enhancing the coaching process. The second data processor allows both the defibrillator to be maintained with updated network data and software and the one or more external devices to be maintained with updated defibrillator data. Independent controllers provide multiple processing paths on critical charge and coaching functions; with the second data processor further providing redundancy control in the event of any malfunction of the first charge processor. | 09-18-2014 |
Stijn Witters, Echt NL
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20140360946 | HYPERBRANCHED POLYMERS - There is disclosed certain hyperbranched polyester amides with a cloud point of at least 50° C. with end groups selected from: betaine-type end groups useful in various end uses such as a flocculant. | 12-11-2014 |
20150021274 | HYPERBRANCHED POLYMERS - There is disclosed certain hyperbranched polyester amides with a cloud point of at least 50° C. in water with end groups selected from: two or more i] tertiary amine functional end groups ii) ammonium functional end groups, iii) polyalkylene glycol functional end groups; iv) quaternary ammonium zwitterionic end groups and/or v) other ionic groups (such as phosphate or sulfate), that are useful in various end uses such as a flocculant. | 01-22-2015 |
Stijn Witters, Lommel BE
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20110003908 | BRANCHED POLYESTERAMINE ACRYLATE - The present invention relates to a method for preparing a branched non dendrimeric macromolecule, comprising: a) providing an addition product of an α,β-olefinically unsaturated compound and an amine comprising at least two hydroxyl groups; and b) esterifying at least part of the hydroxyl groups of the addition product with an olefinically unsaturated carboxylic acid, an olefinically unsaturated carboxylate anion or an olefinically unsaturated carboxylic acid anhydride. The invention further relates to macromolecules obtainable by a method of the invention. | 01-06-2011 |
20110021740 | FURAN BASED RESIN, PROCESS FOR THE PREPARATION THEREOF, AND USE OF THE COMPOUND - The present invention relates to the polymeric reaction product of compounds according to Formula (I) and Formula (II) or (III). Formula (I) has the following structure: where R | 01-27-2011 |
20130045898 | POLYESTER AMIDE FOAMERS - There is disclosed use of hyperbranched polyester amides as a foamer to stabilize mixtures of oil and water especially for mixtures found in gas and/or oil wells to facilitate extraction of the well contents. | 02-21-2013 |
20130109822 | FURAN BASED RESIN, PROCESS FOR THE PREPARATION THEREOF, AND USE OF THE COMPOUND | 05-02-2013 |
Thomas Witters, Hasselt BE
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20100109095 | METHOD FOR FABRICATING A DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND THE DEVICE MADE THEREOF - A method for manufacturing a dual work function semiconductor device and the device made thereof are disclosed. In one aspect, a method includes providing a gate dielectric layer over a semiconductor substrate. The method further includes forming a metal layer over the gate dielectric layer. The method further includes forming a layer of gate filling material over the metal layer. The method further includes patterning the gate dielectric layer, the metal layer and the gate filling layer to form a first and a second gate stack. The method further includes removing the gate filling material only from the second gate stack thereby exposing the underlying metal layer. The method further includes converting the exposed metal layer into an metal oxide layer. The method further includes reforming the second gate stack with another gate filling material. | 05-06-2010 |
Todd Witters, Jenison, MI US
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20110301954 | METHOD FOR ADJUSTING A VOICE RECOGNITION SYSTEM COMPRISING A SPEAKER AND A MICROPHONE, AND VOICE RECOGNITION SYSTEM - A method for adjusting a voice recognition system and a voice recognition system is disclosed, wherein the voice recognition system comprises a speaker and a microphone, and wherein the method comprises the steps of: | 12-08-2011 |