Patent application number | Description | Published |
20110074013 | FILM FORMING METHOD OF SILICON OXIDE FILM, SILICON OXIDE FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber ( | 03-31-2011 |
20120111427 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, METHOD FOR CLEANING PLASMA PROCESSING APPARATUS AND PRESSURE CONTROL VALVE FOR PLASMA PROCESSING APPARATUS - A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path. | 05-10-2012 |
20130130513 | INTERLAYER INSULATING LAYER FORMING METHOD AND SEMICONDUCTOR DEVICE - The interlayer insulating layer forming method for forming an interlayer insulating layer of a semiconductor device via a plasma CVD method includes: carrying a substrate into a depressurized processing container; supplying a plasma generating gas to a first space spaced apart from the substrate; exciting the plasma generating gas in the first space; and supplying a raw material gas including a boron compound that includes at least a hydrogen group or hydrocarbon group, to a second space between the first space and the substrate. Also, a semiconductor device is interconnected in a multilayer through an interlayer insulating layer having an amorphous structure including boron, carbon, and nitrogen, wherein, in the interlayer insulating layer, a hydrocarbon group or an alkyl amino group is mixed in the amorphous structure comprising hexagonal boron nitride and cubic boron nitride. | 05-23-2013 |
20130180660 | PLASMA TREATMENT DEVICE AND OPTICAL MONITOR DEVICE - [Problem] To carry out high accuracy optical monitoring of the surface of a substrate to be treated inside a treatment vessel using non-coherent monitor light having a wide wavelength range, without affecting the uniformity of the electromagnetic radiation from a planar slot antenna. | 07-18-2013 |
20130302992 | APPARATUS FOR PLASMA TREATMENT AND METHOD FOR PLASMA TREATMENT - An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table. | 11-14-2013 |
20140238607 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector. | 08-28-2014 |
20140251541 | PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing apparatus including: a processing container having a cylindrical columnar shape centering around a predetermined axis and defining a processing space therein; a plurality of columnar dielectric bodies installed at a top side of the processing space; a microwave generator configured to generate microwaves; a waveguide unit configured to connect the microwave generator and the plurality of columnar dielectric bodies; and a stage installed within the processing container to intersect with the predetermined axis. The plurality of columnar dielectric bodies are arranged at predetermined intervals along a circumferential direction around the predetermined axis within the processing space. The waveguide unit branches microwaves input from the microwave generator and supplies the branched microwaves to the plurality of columnar dielectric bodies. | 09-11-2014 |
20150159269 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft. | 06-11-2015 |
20150159270 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft. | 06-11-2015 |
Patent application number | Description | Published |
20090050052 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus capable of preventing an unnecessary adhesion film from being deposited in a processing chamber using plasma. The plasma processing apparatus | 02-26-2009 |
20090137125 | ETCHING METHOD AND ETCHING APPARATUS - Disclosed is an etching method for etching a target layer formed on a surface of a target object, including: a resist forming step for forming a resist layer uniformly on the surface of the target object; a mask forming step for forming a patterned etching mask by forming an etching recess on the resist layer; a plasma resistant film forming step for forming a plasma resistant film on the entire surface of the etching mask including a bottom and a sidewall of the etching recess; a bottom plasma resistant film removing step for removing the plasma resistant film formed on the bottom of the etching recess; and a main etching step for etching the target layer by using the etching mask as a mask, after the bottom plasma resistant film removing step. | 05-28-2009 |
20090242130 | PLASMA PROCESSING APPARATUS - The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate. | 10-01-2009 |
20110039355 | Plasma Generation Controlled by Gravity-Induced Gas-Diffusion Separation (GIGDS) Techniques - The invention can provide apparatus and methods of processing a substrate using plasma generation by gravity-induced gas-diffusion separation techniques. By adding or using gases including inert and process gases with different gravities (i.e., ratio between the molecular weight of a gaseous constituent and a reference molecular weight), a two-zone or multiple-zone plasma can be formed, in which one kind of gas can be highly constrained near a plasma generation region and another kind of gas can be largely separated from the aforementioned gas due to differential gravity induced diffusion and is constrained more closer to a wafer process region than the aforementioned gas. | 02-17-2011 |
20110135842 | METHOD AND SYSTEM FOR PERFORMING DIFFERENT DEPOSITION PROCESSES WITHIN A SINGLE CHAMBER - A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space. | 06-09-2011 |
Patent application number | Description | Published |
20080254220 | Plasma processing apparatus - A plasma processing apparatus includes a vacuum processing container, and a placing table for placing an object which is arranged in the container and is to be processed. The processing container includes a tubular container body having an upper opening, and a dielectric top plate attached hermetically to the upper opening of the body and transmitting an electromagnetic wave. The plasma processing apparatus further includes an electromagnetic wave supplying system for supplying an electromagnetic wave for generating plasma into the container through the top plate, and a gas supplying system for supplying a gas containing a processing gas into the container. A gas ejecting hole for ejecting the gas supplied from the gas supplying system into the container is formed on the top plate. A discharge prevention member having a permeability is arranged in each ejection hole. | 10-16-2008 |
20090194237 | PLASMA PROCESSING SYSTEM - A plasma processing system includes: a plasma processing apparatus which processes a substrate in a processing container by turning a processing gas supplied inside the processing container into plasma; and a carrier arm which carries the substrate in and out of the processing container, wherein a loading table is mounted inside the processing container and the substrate is loaded on the top surface of the loading table, and one or more recessed portions are formed on regions of the top surface of the loading table, wherein the regions corresponds to locations on the carrier arm for supporting the substrate. The coating layer is not transferred from the top surface of the loading table to the back of the substrate in the regions corresponding to the locations on the carrier arm for supporting the substrate. Accordingly, the coating layer is not transferred to the top surface of the carrier arm. | 08-06-2009 |
20090230342 | GATE VALVE AND SEMICONDUCTOR MANUFACTURING APPARATUS - A gate valve of a semiconductor manufacturing apparatus, which is formed between a processing chamber in which processing is performed and a transfer chamber which carries a substrate on which the processing is performed, includes a gate valve at a side of the processing chamber; a sealing member which is formed in the gate valve at the side of the processing chamber; a gate valve at the side of the transfer chamber; a sealing member which is formed in the gate valve at the side of the transfer chamber; and a thermal insulator which is formed between the gate valve at the side of the processing chamber and the gate valve at the side of the transfer chamber. | 09-17-2009 |
20090266711 | SUBSTRATE PROCESSING APPARATUS - The substrate processing apparatus includes: at least one processing chamber in which a semiconductor wafer is processed; a transfer chamber disposed adjacent to the at least one processing chamber; a vacuum pump for depressurizing an inside of the transfer chamber; a transfer device for carrying the semiconductor wafer between the transfer chamber and the at least one processing chamber; and a foreign substance removing unit for removing foreign substances adhered to the transfer device in the transfer chamber. | 10-29-2009 |
20130126001 | PROCESSING METHOD - A processing method performs a predetermined process to an object by supplying a process gas at a prescribed flow rate into a process container to which a gas supply unit and an exhaust system are connected. The processing method includes a first process of setting the gas supply unit to supply a process gas at a flow rate greater than the prescribed flow rate of a predetermined process for a predetermined short time from a gas channel while exhausting an atmosphere in the process container through the exhaust system; and a second process of setting the gas supply unit to supply the process gas at the prescribed flow rate from the gas channel after the first process is completed. | 05-23-2013 |
Patent application number | Description | Published |
20130157468 | ETCHING METHOD, SUBSTRATE PROCESSING METHOD, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT - A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost. | 06-20-2013 |
20140231016 | PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing apparatus including a processing container that defines a processing space, a mounting table, and a microwave introducing antenna. The mounting table includes a mounting region where a workpiece accommodated in the processing container is mounted. The microwave introducing antenna includes a dielectric window installed above the mounting table. The dielectric window includes a bottom surface region that adjoins the processing space. The bottom surface region is configured in an annular shape so as to limit a region where a surface wave is propagated to a region above an edge of the mounting region. | 08-21-2014 |
20150087140 | FILM FORMING METHOD, FILM FORMING DEVICE, AND FILM FORMING SYSTEM - A film forming method according to an embodiment includes: (a) a step of supplying a first precursor gas of a semiconductor material into a processing vessel in which a processing target substrate is disposed, the first precursor gas being adsorbed onto the processing target substrate during the step; (b) a step of supplying a second precursor gas of a dopant material into the processing vessel, the second precursor gas being adsorbed onto the processing target substrate during the step; and (c) a step of generating the plasma of a reaction gas in the processing vessel, a plasma treatment being performed during the step so as to modify a layer adsorbed onto the processing target substrate. | 03-26-2015 |
20150110973 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus of the present disclosure includes a processing container configured to accommodate a wafer; a placing unit provided on a bottom surface of the processing container to place the wafer thereon; a first processing gas supply pipe provided in a central portion of a ceiling of the processing container to supply a first processing gas into the processing container; a second processing gas supply pipe provided in a side wall of the processing container to supply a second processing gas into the processing container; a rectifying gas supply pipe provided in the side wall of the processing container above the second processing gas supply pipe to supply a rectifying gas downward into the processing container; and a radial line slot antenna configured to radiate microwave into the processing container. | 04-23-2015 |
20150176125 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus for processing a processing target object by a processing gas. The substrate processing apparatus includes: a processing container configured to accommodate the processing target object; a mounting unit provided within the processing container to place the processing target object thereon; a processing gas supply unit provided in a side wall of the processing container to supply the processing gas into the processing container; and a processing gas diffusion mechanism provided outside the processing gas supply unit. The processing gas diffusion mechanism includes a first diffusion chamber and a second diffusion chamber which are provided in multiple stages, and the first diffusion chamber is located above the second diffusion chamber, and the first diffusion chamber and the second diffusion chamber communicate with each other through a plurality of processing gas communication paths. | 06-25-2015 |
20150194290 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus according to an exemplary embodiment includes a processing container that defines a processing space; an antenna provided above the processing space and including a disc-shaped wave guiding path around a predetermined axis and a metal plate defining the wave guiding path from a lower side; a microwave generator connected to the antenna and configured to generate microwaves; a stage provided in the processing container and facing the antenna across the processing space to intersect with the predetermined axis; and a heater configured to heat the metal plate. The metal plate includes a plurality of openings along a first circle around the predetermined axis and a second circle having a diameter larger than the first circle. The antenna includes a plurality of protrusions made of a dielectric material extending out into the processing space through the plurality of openings. The microwaves are introduced around the predetermined axis. | 07-09-2015 |
20150211124 | FILM FORMING APPARATUS - Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage. | 07-30-2015 |
20150255258 | PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS PROVIDED WITH SAME - Provided is a plasma processing apparatus including: a rotary mounting table supported by a rotatory shaft arranged rotatably within a processing chamber and including multiple substrate placement units arranged side by side in a circumferential direction; a processing gas supplying section for supplying processing gas into the processing chamber; a plasma generating section wherein multiple microwave introducing mechanisms, each provided on the ceiling of the processing chamber so as to face the rotary mounting table and used for generating a plasma of the processing gas, are arranged in multiple rows spaced apart from each other from the inside of the movement path of the substrates when the rotary mounting table is rotated to the outside, each row of microwave introducing mechanisms being formed by arranging the microwave introducing mechanisms annularly side by side along the circumferential direction; and an exhaust unit that evacuates an inside of the processing chamber. | 09-10-2015 |
20150325448 | ETCHING METHOD, SUBSTRATE PROCESSING METHOD, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT - A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost. | 11-12-2015 |