Patent application number | Description | Published |
20080233723 | PLASMA DOPING METHOD AND APPARATUS - There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. | 09-25-2008 |
20080258082 | Plasma Processing Method and Plasma Processing Apparatus - It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. | 10-23-2008 |
20080308871 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region. | 12-18-2008 |
20080318399 | PLASMA DOPING METHOD - A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. | 12-25-2008 |
20090023262 | Method for fabricating semiconductor device - To provide a fine transistor of high precision. A method for fabricating a transistor comprises the step of forming a gate electrode ( | 01-22-2009 |
20090026540 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r′ of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2 | 01-29-2009 |
20090035878 | Plasma Doping Method and Apparatus - There are provided a plasma doping method and apparatus which is excellent in a repeatability and a controllability of an implanting depth of an impurity to be introduced into a sample or a depth of an amorphous layer. | 02-05-2009 |
20090042321 | APPARATUS AND METHOD FOR PLASMA DOPING - Gas supplied to gas flow passages of a top plate from a gas supply device by gas supply lines forms flow along a vertical direction along a central axis of a substrate, so that the gas blown from gas blow holes can be made to be uniform, and a sheet resistance distribution is rotationally symmetric around a substrate center. | 02-12-2009 |
20090068769 | Method and Apparatus for Plasma Processing - An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. | 03-12-2009 |
20090104783 | Asher, Ashing Method and Impurity Doping Apparatus - To provide an asher, an ashing method and an impurity doping apparatus group which can detect the interface between a surface hardening layer of a resist and an internal nonhardening layer and the interface between the nonhardening layer and a semiconductor substrate, with a high throughput. | 04-23-2009 |
20090130335 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW - A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window. The flow rates of gases that are introduced through the gas flow-out holes and the gas flow-out holes, respectively, can be controlled independently of each other, whereby the uniformity of processing can be increased. | 05-21-2009 |
20090140174 | Impurity Introducing Apparatus and Impurity Introducing Method - It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. | 06-04-2009 |
20090176355 | Plasma Doping Method and Plasma Processing Device - An object of the invention is to provide a plasma doping method excellent in the uniformity of concentration of impurities introduced into the surface of a sample and a plasma processing device capable of uniformly performing plasma processing of a sample. | 07-09-2009 |
20090181526 | Plasma Doping Method and Apparatus - An object of the invention is to provide a plasma doping method and a plasma doping apparatus in which uniformity of concentration of impurities introduced into a sample surface are excellent. | 07-16-2009 |
20090186426 | Plasma Doping Method and Apparatus Employed in the Same - A plasma doping method and a plasma doping apparatus, having a superior in-plane uniformity of an amorphous layer formed on a sample surface, are provided. | 07-23-2009 |
20090233383 | Plasma Doping Method and Apparatus - It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. | 09-17-2009 |
20090233385 | Plasma Doping Method and Plasma Doping Apparatus - Before a plasma doping process is performed, there is generated a plasma of a gas containing an element belonging to the same group in the periodic table as the primary element of a silicon substrate | 09-17-2009 |
20090233427 | PLASMA DOPING METHOD - An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter. | 09-17-2009 |
20090266298 | PLASMA DOPING APPARATUS - On an upper wall of a vacuum container opposing a sample electrode, a plasma-invasion prevention-and-electron beam introducing hole is installed which is communicated with an electron beam introducing tube, and is used for introducing an electron beam toward a substrate in the vacuum container, as well as for preventing invasion of plasma into the electron beam introducing tube. In this structure, supposing that the Debye length of the plasma is set to λ | 10-29-2009 |
20090289300 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r | 11-26-2009 |
20090317963 | PLASMA DOPING PROCESSING DEVICE AND METHOD THEREOF - An amount of leakage of a substrate-cooling gas into a vacuum container is measured by using a flow-rate measuring device so that the flow rate of a diluting gas that is the same as the substrate-cooling gas is controlled by a control device or a plasma doping time is prolonged, in accordance with the amount of leakage. | 12-24-2009 |
20100009469 | PLASMA DOPING METHOD AND APPARATUS - During a plasma discharging process, a laser beam having a certain exciting wavelength is applied to a surface of a process substrate, so as to measure, using scattered light, an impurity density and a crystal state on the surface of the process substrate. | 01-14-2010 |
20100075489 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PRODUCING APPARATUS - A plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and a plurality of substrates are successively doped with the impurity by using the plasma, wherein a plasma doping condition of a subject substrate is adjusted based on an accumulated discharge time until the subject substrate is placed in the vacuum chamber. | 03-25-2010 |
20100098837 | PLASMA DOPING METHOD AND APPARATUS - It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. | 04-22-2010 |
20100207211 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a fin-type semiconductor region ( | 08-19-2010 |
20100297836 | PLASMA DOPING APPARATUS AND METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A top plate, disposed on an upper portion of a vacuum container so as to face a substrate-placing area of a sample electrode, is provided with an impurity-containing film that contains an impurity, and is formed on a top plate peripheral edge portion area that is a face exposable to a plasma generated in the vacuum container, and is located on a peripheral edge of a top plate center portion area that faces the center portion of the substrate-placing area. | 11-25-2010 |
20100330782 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region. | 12-30-2010 |
20110065266 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A substrate is exposed to a plasma generated from a gas containing an impurity, thereby doping a surface portion of the substrate with the impurity and thus forming an impurity region. A predetermined plasma doping time is used, which is included within a time range over which a deposition rate on the substrate by the plasma is greater than 0 nm/min and less than or equal to 5 nm/min. | 03-17-2011 |
20110147813 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes: forming a fin-type semiconductor region on a substrate; and introducing an n-type impurity into at least a side of the fin-type semiconductor region by a plasma doping process, thereby forming an n-type impurity region in the side of the fin-type semiconductor region. In the introducing the n-type impurity, when a source power in the plasma doping process is denoted by a character Y [W], the supply of a gas containing the n-type impurity per unit time and per unit volume is set greater than or equal to 5.1×10 | 06-23-2011 |
20110147856 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A fin-type semiconductor region ( | 06-23-2011 |
20110217830 | PLASMA DOPING METHOD AND APPARATUS - There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. | 09-08-2011 |
20110237056 | METHOD FOR MAKING JUNCTION AND PROCESSED MATERIAL FORMED USING THE SAME - An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction. | 09-29-2011 |
20110272763 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Extension regions ( | 11-10-2011 |
20110275201 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVE FIN-SHAPED SEMICONDUCTOR REGIONS - First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r | 11-10-2011 |
20120015504 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r′ of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r. | 01-19-2012 |
20120119295 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A fin-type semiconductor region ( | 05-17-2012 |
20120186519 | PLASMA DOPING METHOD AND APPARATUS - A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased. | 07-26-2012 |
20120285818 | PLASMA DOPING METHOD WITH GATE SHUTTER - In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate. | 11-15-2012 |
20130175586 | SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: forming a fin-type semiconductor region on a substrate; and introducing an n-type impurity into at least a side of the fin-type semiconductor region by a plasma doping process, thereby forming an n-type impurity region in the side of the fin-type semiconductor region. In the introducing the n-type impurity, when a source power in the plasma doping process is denoted by a character Y [W], the supply of a gas containing the n-type impurity per unit time and per unit volume is set greater than or equal to 5.1×10 | 07-11-2013 |
20130323916 | PLASMA DOPING METHOD AND APPARATUS - A plasma doping apparatus which introduces a predetermined mass flow of gas from a gas supply device into a vacuum chamber while discharging the gas through an exhaust port by a turbo-molecular pump, which is an exhaust device in order to maintain the vacuum chamber under a predetermined pressure by a pressure adjusting valve. A high-frequency power source supplies high-frequency power of 13.56 MHz to a coil disposed in the vicinity of a dielectric window opposite a sample electrode in order to generate an inductively coupled plasma in the vacuum chamber. A sum of an area of an opening of a gas flow-off port opposed to a center portion of the sample electrode is configured to be smaller than that of an area of an opening of the gas flow-off port opposed to a peripheral portion of the sample electrode in order to improve the uniformity. | 12-05-2013 |
20130337641 | PLASMA DOPING METHOD AND APPARATUS - A plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. | 12-19-2013 |