Patent application number | Description | Published |
20090130049 | Self-Sterilizing Products - Self-sterilising products, and in particular novel products comprising phthalocyanine derivatives bound to polymers, a process for the preparation of said products and their use for preparing self-sterilising industrial and medical articles or devices, are described. | 05-21-2009 |
20090131392 | PHTALOCYANINE DERIVATIVES, PROCESS FOR THEIR PREPARATION, PHARMACEUTICAL COMPOSITIONS CONTAINING THEM AND THEIR USE - Phthalocyanine derivatives are described having photosensitising characteristics and high solubility in water, useful for photodynamic treatment of bacterial infections, in particular infections generated by Gram-negative bacteria. | 05-21-2009 |
20110112464 | MESO-SUBSTITUTED PORPHYRINS - Meso-substituted porphyrins of general formula (I) | 05-12-2011 |
20140163218 | NOVEL PHTHALOCYANINE DERIVATIVES FOR THERAPEUTIC USE - There are described phthalocyanine derivates, the pharmaceutical compositions and the medical devices that contain them, possibly in combination with chelating agents, such as EDTA, useful for treating, by means of photodynamic therapy, diseases characterised by cellular hyperproliferation, microbial infections caused by Gram− bacteria, Gram+ bacteria and fungi, and for treating various types of infected and non-infected ulcers. | 06-12-2014 |
Patent application number | Description | Published |
20100328984 | PIEZO-EFFECT TRANSISTOR DEVICE AND APPLICATIONS - A piezo-effect transistor (PET) device includes a piezoelectric (PE) material disposed between first and second electrodes; and a piezoresistive (PR) material disposed between the second electrode and a third electrode, wherein the first electrode comprises a gate terminal, the second electrode comprises a common terminal, and the third electrode comprises an output terminal such that an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material. | 12-30-2010 |
20110122682 | High Density Low Power Nanowire Phase Change Material Memory Device - A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction. | 05-26-2011 |
20110133603 | COUPLING PIEZOELECTRIC MATERIAL GENERATED STRESSES TO DEVICES FORMED IN INTEGRATED CIRCUITS - A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material. | 06-09-2011 |
20120225527 | HIGH DENSITY LOW POWER NANOWIRE PHASE CHANGE MATERIAL MEMORY DEVICE - A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction. | 09-06-2012 |
20120270353 | COUPLING PIEZOELECTRIC MATERIAL GENERATED STRESSES TO DEVICES FORMED IN INTEGRATED CIRCUITS - A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material. | 10-25-2012 |