Patent application number | Description | Published |
20080294646 | DATA DISTRIBUTING AND ACCESSING METHOD AND SYSTEM - A data distributing and accessing method for sharing a file via a network system includes steps of: dividing the file into a plurality of blocks; distributing the blocks in a plurality of data hosts interconnected via the network system; one of the data hosts receiving a file-reading request from a user host and issuing collecting requests to other data hosts to collect the blocks from the data hosts; and transferring the collected blocks from the data hosts to the user host to be combined into the file. | 11-27-2008 |
20130270628 | Replacement Channels - The present disclosure relates to a device and method for strain inducing or high mobility channel replacement in a semiconductor device. The semiconductor device is configured to control current from a source to a drain through a channel region by use of a gate. A strain inducing or high mobility layer produced in the channel region between the source and drain can result in better device performance compared to Si, faster devices, faster data transmission, and is fully compatible with the current semiconductor manufacturing infrastructure. | 10-17-2013 |
20150035017 | Contact Structure of Semiconductor Device - The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface; a fin structure extending upward from the substrate major surface, wherein the fin structure comprises a first fin, a second fin, and a third fin between the first fin and second fin; a first germanide over the first fin, wherein a first bottom surface of the first germanide has a first acute angle to the major surface; a second germanide over the second fin on a side of the third fin opposite to first germanide substantially mirror-symmetrical to each other; and a third germanide over the third fin, wherein a third bottom surface of the third germanide has a third acute angle to the major surface less than the first acute angle. | 02-05-2015 |
20150041918 | Self-Aligned Dual-Metal Silicide and Germanide Formation - A method includes growing an epitaxy semiconductor region at a major surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing upwardly and a downward facing facet facing downwardly. The method further includes forming a first metal silicide layer contacting the upward facing facet, and forming a second metal silicide layer contacting the downward facing facet. The first metal silicide layer and the second metal silicide layer comprise different metals. | 02-12-2015 |
20150236016 | Contact Structure of Semiconductor Device - A method of fabricating a semiconductor device comprises forming a fin structure extending from a substrate, the fin structure comprising a first fin, a second fin, and a third fin between the first fin and the second fin. The method further comprises forming germanide over a first facet of the first fin, a second facet of the second fin, and a substantially planar surface of the third fin, wherein the first facet forms a first acute angle with a major surface of the substrate and is substantially mirror symmetric with the second facet, and wherein the substantially planar surface of the third fin forms a second acute angle smaller than the first acute angle with the major surface of the substrate. | 08-20-2015 |
20150303118 | Wrap-Around Contact - Fin structures are formed on a substrate. An isolation region is between the fin structures. The fin structures comprise epitaxial regions extending above the isolation region. Each of the epitaxial regions has a widest mid-region between an upper-surface and an under-surface. A dual-layer etch stop is formed over the fin structures and comprises a first sub-layer and a second sub-layer. The first sub-layer is along the upper- and under-surfaces and the isolation region. The second sub-layer is over the first sub-layer and along the upper-surfaces, and the second sub-layer merges together proximate the widest mid-regions of the epitaxial regions. Portions of the dual-layer etch stop are removed from the upper- and under-surfaces. A dielectric layer is formed on the upper- and under-surfaces. A metal layer is formed on the dielectric layer on the upper-surfaces. A barrier layer is formed on the metal layer and along the under-surfaces. | 10-22-2015 |
20160099331 | Self-Aligned Dual-Metal Silicide and Germanide Formation - A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy. | 04-07-2016 |
Patent application number | Description | Published |
20120189852 | Multi-layer Decorating Element and Method of its Manufacture - A method for producing a multi-layer decorating element includes the steps of: (a) providing a base, a first plate, a second plate and an adhesive layer; (b) stacking the first and second plates onto one of the base and the adhesive layer; (c) stacking the other of the base and the adhesive layer onto one of the base and the adhesive layer to form a stacked array; (d) hot pressing the stacked array; and (e) removing the adhesive layer. | 07-26-2012 |
20130251955 | Multi-Layer Decorating Element and Method of its Manufacture - A method for producing a multi-layer decorating element includes the steps of: (a) providing a base, a first plate, a second plate and an adhesive layer; (b) stacking the first and second plates onto one of the base and the adhesive layer; (c) stacking the other of the base and the adhesive layer onto one of the base and the adhesive layer to form a stacked array; (d) hot pressing the stacked array; and (e) removing the adhesive layer. | 09-26-2013 |
20160058602 | HAND BRACE - A hand brace includes a wrist sheath and a finger holder. The finger holder has a height adjusting rod, a length adjusting rod, and a finger support. The height adjusting rod has one end pivotally connected to the wrist sheath, so that the height adjusting rod is allowed to adapt to a wearer's finger in terms of position. The length adjusting rod is connected to an opposite end of the height adjusting rod in an axially movable manner, so that the length adjusting rod is allowed to adapt to the wearer's finger in terms of length. The length adjusting rod has a joint portion that has pivotal connection with the finger support. Thereby, the hand brace provides the wearer's finger with sufficient and relevant support. | 03-03-2016 |