Patent application number | Description | Published |
20100327697 | Acoustic resonator structure comprising a bridge - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 12-30-2010 |
20100327994 | ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION - An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. An electrical filter comprises an acoustic resonator. | 12-30-2010 |
20110204996 | ACOUSTIC COUPLING LAYER FOR COUPLED RESONATOR FILTERS AND METHOD OF FABRICATING ACOUSTIC COUPLING LAYER - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm. | 08-25-2011 |
20120096697 | METHOD OF FORMING ACOUSTIC RESONATOR USING INTERVENING SEED LAYER - A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer. | 04-26-2012 |
20120161902 | SOLID MOUNT BULK ACOUSTIC WAVE RESONATOR STRUCTURE COMPRISING A BRIDGE - A solid mount bulk acoustic wave resonator, comprises a first electrode; a second electrode; a piezoelectric layer disposed between the first and second electrodes; and an acoustic reflector comprising a plurality of layers and disposed beneath the first electrode, the second electrode and the piezoelectric layer, An overlap of the acoustic reflector, the first electrode, the second electrode and the piezoelectric layer defines an active area of the acoustic resonator, and the piezoelectric layer extends over an edge of the first electrode. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. The bridge overlaps a portion of the first electrode. | 06-28-2012 |
20120194297 | ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 08-02-2012 |
20120206015 | ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 08-16-2012 |
20120218057 | FILM BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE - A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer. | 08-30-2012 |
20120218058 | COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode. | 08-30-2012 |
20120218059 | STACKED BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE AND AN ACOUSTIC REFLECTOR ALONG A PERIMETER OF THE RESONATOR - In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode. | 08-30-2012 |
20120218060 | BULK ACOUSTIC WAVE RESONATOR COMPRISING BRIDGE FORMED WITHIN PIEZOELECTRIC LAYER - A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer. | 08-30-2012 |
20120319530 | BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER - In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer. | 12-20-2012 |
20120319534 | BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER AND BRIDGE - A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode. | 12-20-2012 |
20120326807 | ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION - An acoustic resonator comprises (a) a substrate having atop surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween; (b) an acoustic mirror having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the substrate; (c) a first electrode having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the acoustic mirror; (d) a piezoelectric layer having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the first electrode; and (e) a second electrode having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween. The bottom surface is formed on the top surface of the piezoelectric layer, wherein the overlapped area of body portions of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer and the second electrode is defined as an active area A. | 12-27-2012 |
20130038408 | BULK ACOUSTIC WAVE RESONATOR DEVICE COMPRISING AN ACOUSTIC REFLECTOR AND A BRIDGE - A bulk acoustic wave (BAW) resonator device includes an acoustic reflector formed over a substrate and a resonator stack formed over the acoustic reflector. The acoustic reflector includes multiple acoustic impedance layers. The resonator stack includes a first electrode formed over the acoustic reflector, a piezoelectric layer formed over the first electrode, and a second electrode formed over the piezoelectric layer. A bridge is formed within one of the acoustic reflector and the resonator stack. | 02-14-2013 |
20130063227 | ACCOUSTIC RESONATOR HAVING MULTIPLE LATERAL FEATURES - A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures. | 03-14-2013 |
20130106534 | PLANARIZED ELECTRODE FOR IMPROVED PERFORMANCE IN BULK ACOUSTIC RESONATORS | 05-02-2013 |
20130193808 | FILM BULK ACOUSTIC RESONATOR WITH MULTI-LAYERS OF DIFFERENT PIEZOELECTRIC MATERIALS AND METHOD OF MAKING - A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended. | 08-01-2013 |
20130314177 | ACOUSTIC RESONATOR COMPRISING COLLAR, FRAME AND PERIMETER DISTRIBUTED BRAGG REFLECTOR - An acoustic resonator includes a bottom electrode disposed over a substrate, a piezoelectric layer disposed over the bottom electrode, a top electrode disposed over the piezoelectric layer, and a cavity disposed beneath the bottom electrode. An overlap of the bottom electrode, the piezoelectric layer and the top electrode defines a main membrane region of the acoustic resonator structure. The acoustic resonator further includes an acoustic reflector disposed over the substrate adjacent to the cavity, the acoustic reflector including a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material. | 11-28-2013 |
20140111288 | ACOUSTIC RESONATOR HAVING GUARD RING - A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a guard ring structure formed around a perimeter of an active region corresponding to an overlap of the first electrode, the first piezoelectric layer, and the second electrode. | 04-24-2014 |
20140118087 | ACOUSTIC RESONATOR COMPRISING COLLAR AND FRAME - An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, a frame disposed within a main membrane region defined by an overlap between the first electrode, the piezoelectric layer, and the second electrode, and having an outer edge substantially aligned with a boundary of the main membrane region, and a collar formed separate from the frame, disposed outside the main membrane region, and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region. | 05-01-2014 |
20140118088 | ACCOUSTIC RESONATOR HAVING COMPOSITE ELECTRODES WITH INTEGRATED LATERAL FEATURES - A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic reflector, a piezoelectric layer on the bottom electrode, and a top electrode on the piezoelectric layer. At one of the bottom electrode and the top electrode is a composite electrode having an integrated lateral feature, arranged between planar top and bottom surfaces of the composite electrode and configured to create a cut-off frequency mismatch. | 05-01-2014 |
20140118091 | ACOUSTIC RESONATOR HAVING COLLAR STRUCTURE - A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a first piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a collar structure disposed around a perimeter of an active region defined by an overlap between the first electrode, the second electrode, and the piezoelectric layer. | 05-01-2014 |
20140118092 | ACCOUSTIC RESONATOR HAVING INTEGRATED LATERAL FEATURE AND TEMPERATURE COMPENSATION FEATURE - A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic mirror, a piezoelectric layer on the bottom electrode, a top electrode on the piezoelectric layer, and a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. At least one of the bottom electrode and the top electrode includes an integrated lateral feature configured to create at least one of a cut-off frequency mismatch and an acoustic impedance mismatch. | 05-01-2014 |
20140125202 | BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION AND A PIEZOELECTRIC LAYER WITH MULTIPLE DOPANTS - A bulk acoustic wave (BAW) resonator, comprises: a first electrode; a second electrode comprising a plurality of sides. At least one of the sides comprises a cantilevered portion. The bulk acoustic wave (BAW) resonator also comprises a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer comprises a piezoelectric material doped with a plurality of rare earth elements, and the cantilevered portion extends above the piezoelectric layer. The bulk acoustic wave (BAW) resonator comprises a gap between the cantilevered portion and the piezoelectric layer. | 05-08-2014 |
20140125203 | BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION AND A PIEZOELECTRIC LAYER WITH VARYING AMOUNTS OF DOPANT - A bulk acoustic wave (BAW) resonator, comprises: a first electrode; a second electrode comprising a plurality of sides. At least one of the sides comprises a cantilevered portion. The bulk acoustic wave (BAW) resonator also comprises a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer comprises a piezoelectric material doped with a plurality of rare earth elements, and the cantilevered portion extends above the piezoelectric layer. The bulk acoustic wave (BAW) resonator comprises a gap between the cantilevered portion and the piezoelectric layer. | 05-08-2014 |
20140139077 | ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION - An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. A bridge disposed adjacent to one of the sides of the second electrode. | 05-22-2014 |
20140152152 | ACOUSTIC RESONATOR COMPRISING TEMPERATURE COMPENSATING LAYER AND PERIMETER DISTRIBUTED BRAGG REFLECTOR - An acoustic resonator structure includes a bottom electrode disposed on a substrate, a piezoelectric layer disposed on the bottom electrode, a top electrode disposed on the piezoelectric layer, a cavity disposed beneath the bottom electrode, and a temperature compensating feature. The temperature compensating feature has a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric and electrode layers. The acoustic resonator structure further includes an acoustic reflector disposed over the substrate around a perimeter of the cavity. The acoustic reflector includes a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material. | 06-05-2014 |
20140174908 | SCANDIUM-ALUMINUM ALLOY SPUTTERING TARGETS - A sputtering target comprises an alloy of scandium and aluminum, wherein the alloy has a concentration of 3-10 at % scandium and 90-97 at % aluminum. The sputtering target can be used to produce a piezoelectric layer for an apparatus such as an acoustic resonator. | 06-26-2014 |
20140175950 | ACOUSTIC RESONATOR COMPRISING ALUMINUM SCANDIUM NITRIDE AND TEMPERATURE COMPENSATION FEATURE - An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode and comprising aluminum scandium nitride, a second electrode disposed on the piezoelectric layer, and a temperature compensation feature having a temperature coefficient offsetting at least a portion of a temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode. | 06-26-2014 |
20140176261 | ACOUSTIC RESONATOR DEVICE WITH AT LEAST ONE AIR-RING AND FRAME - An acoustic resonator device includes a bottom electrode disposed on a substrate over an air cavity, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer, where an overlap between the top electrode, the piezoelectric layer and the bottom electrode over the air cavity defines a main membrane region. The acoustic resonator device further includes at least one air-ring defining a boundary of the main membrane region, and at least one first frame formed between the bottom electrode and the piezoelectric layer or formed between the substrate and the bottom electrode, and a second frame formed between the piezoelectric layer and the top electrode. | 06-26-2014 |
20150240349 | MAGNETRON SPUTTERING DEVICE AND METHOD OF FABRICATING THIN FILM USING MAGNETRON SPUTTERING DEVICE - A method is provided for depositing a thin film of material on a substrate. The method includes providing the substrate on a cathode and a target on an anode in a reaction chamber of a magnetron sputtering device, generating a magnetic field using an enhanced magnetron including an upper base plate to generate an upper magnetic field having a field strength of about 205 gauss and a lower base plate to generate a lower magnetic field having a field strength of about −215 gauss to about −370 gauss, injecting sputtering gas at low pressure into the reaction chamber, and applying power across the anode and cathode to create plasma. Ions from the plasma sputter atoms of at least one element from the target, which are deposited on the substrate to form the thin film. Power density of the power is in a range of about 20 W/cm | 08-27-2015 |
20150244346 | BULK ACOUSTIC WAVE RESONATORS HAVING DOPED PIEZOELECTRIC MATERIAL AND FRAME ELEMENTS - A bulk acoustic wave (BAW) resonator includes a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. In an embodiment, the BAW resonator includes a recessed frame element disposed over a surface of at least one of the first and second electrodes. In another embodiment, the BAW resonator includes a raised frame element disposed over a surface of at least one of the first and second electrodes. In yet another embodiment, the BAW resonator includes both the raised and recessed frame elements. | 08-27-2015 |
20150247232 | Tuning the Piezoelectric Coefficient of a Doped Piezoelectric Material Using Multiple Noble Gases - A process chamber is provided. A target comprising an alloy comprising a base metal atomic species and an alloy atomic species is placed in the process chamber. The concentration of the alloy atomic species is subject to a manufacturing variation. A substrate is placed in the process chamber. While supplying gases comprising a noble gas of a first atomic species and a noble gas of a second atomic species, different from the first atomic species, to the process chamber, a sputtering operation is performed to transfer target material from the target to the substrate to form a piezoelectric film. A relative flow rate is set between the noble gas of the first atomic species and the noble gas of the second atomic species to form the film with a predetermined piezoelectric coefficient notwithstanding the manufacturing variation. | 09-03-2015 |
20150280679 | ACOUSTIC RESONATOR WITH PLANARIZATION LAYER AND METHOD OF FABRICATING THE SAME - A method is provided for fabricating a bulk acoustic wave (BAW) resonator device. The method includes forming an etch stop layer over a bottom electrode and a substrate; forming a dielectric layer on the etch stop layer; forming a photomask over the dielectric layer defining an opening over the bottom electrode; etching a portion the dielectric layer through the opening of the photomask to the etch stop layer to create a corresponding opening in the dielectric layer; removing the photomask, leaving un-etched protruding portions of the dielectric layer around the opening in the dielectric layer; and removing the protruding portions of the dielectric layer, a portion of the etch stop layer located over the bottom electrode, and a minimal portion of the bottom electrode to provide a planarized surface including a top surface of the bottom electrode and an adjacent top surface of the dielectric layer deposited over the substrate. | 10-01-2015 |
20150311046 | FABRICATING LOW-DEFECT RARE-EARTH DOPED PIEZOELECTRIC LAYER - A plasma vapor deposition (PVD) system and method for depositing a piezoelectric layer over a substrate are disclosed. A plasma is created in a reaction chamber creates from the sputtering gas supplied to the reaction chamber. The plasma sputters atoms from the sputtering target, which are deposited on the substrate for forming the thin film of the material. | 10-29-2015 |
20150318837 | ACOUSTIC RESONATOR DEVICE WITH AIR-RING AND TEMPERATURE COMPENSATING LAYER - A bulk acoustic wave (BAW) resonator device includes a substrate defining a cavity, a bottom electrode formed over the substrate and at least a portion of the cavity, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. An air-wing and an air-bridge are formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device. The BAW resonator device further includes a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. The temperature compensation feature extends outside the active region by a predetermined length. | 11-05-2015 |
20150326200 | Bulk Acoustic Wave Devices with Temperature-Compensating Niobium Alloy Electrodes - A bulk acoustic wave (BAW) resonator having a first electrode, a second electrode, and a piezoelectric layer between the first electrode and the second electrode. The first electrode is of a first electrode material. The second electrode is of a second electrode material. The piezoelectric layer is of a piezoelectric material doped with at least one rare earth element. The BAW resonator has a resonant frequency dependent at least in part on respective thicknesses and materials of the first electrode, the second electrode and the piezoelectric layer. The resonant frequency has a temperature coefficient. At least one of the first electrode and the second electrode includes a niobium alloy electrode material that, relative to molybdenum as the electrode material, reduces the temperature coefficient of the resonant frequency of the BAW resonator. | 11-12-2015 |
20150349747 | CAPACITIVE COUPLED RESONATOR DEVICE WITH AIR-GAP SEPARATING ELECTRODE AND PIEZOELECTRIC LAYER - A bulk acoustic wave (BAW) resonator includes a bottom electrode disposed on a substrate, a piezoelectric layer disposed over the bottom electrode, and a top electrode disposed over the piezoelectric layer. The BAW resonator further includes at least one air-gap and corresponding support structure, where the at least one air-gap separates at least one of the bottom electrode and the top electrode from the piezoelectric layer, respectively. | 12-03-2015 |