Patent application number | Description | Published |
20090008716 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device according to an embodiment includes: a fin type MOSFET having a first gate electrode, and a first gate insulating film for generating Fermi level pinning in the first gate electrode; and a planar type MOSFET having a second gate electrode, and a second gate insulating film for generating no Fermi level pinning in the second gate electrode, or generating Fermi level pinning weaker than that generated in the first gate electrode in the second gate electrode. | 01-08-2009 |
20100072554 | SEMICONDUCTOR DEVICE - A semiconductor device according to one embodiment includes: an n-type transistor comprising a first gate electrode formed on a semiconductor substrate via a first gate insulating film, a first channel region formed in the semiconductor substrate under the first gate insulating film, and first source/drain regions formed in the semiconductor substrate on both sides of the first channel region, the first gate electrode comprising a first metal layer and a first conductive layer thereon; and a p-type transistor comprising a second gate electrode formed on the semiconductor substrate via a second gate insulating film, a second channel region formed in the semiconductor substrate under the second gate insulating film, and second source/drain regions formed in the semiconductor substrate on both sides of the second channel region, the second gate electrode comprising a second metal layer and a second conductive layer thereon, the second metal layer being thicker than the first metal layer and having the same constituent element as the first metal layer. | 03-25-2010 |
20100176460 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device according to one embodiment includes: a semiconductor substrate having first and second regions; a first transistor comprising a first gate insulating film and a first gate electrode thereon in the first region on the semiconductor substrate, the first gate insulating film comprising a first interface layer containing nitrogen atoms and a first high dielectric constant layer thereon; a second transistor comprising a second gate insulating film and a second gate electrode thereon in the second region on the semiconductor substrate, the second gate insulating film comprising a second interface layer and a second high dielectric constant layer thereon, the second interface layer containing nitrogen atoms at an average concentration lower than that of the first interface layer or not containing nitrogen atoms, and the second transistor having a threshold voltage different from that of the first transistor; and an element isolation region on the semiconductor substrate, the element isolation region containing oxygen atoms and isolating the first transistor from the second transistor. | 07-15-2010 |
Patent application number | Description | Published |
20090152623 | FIN TRANSISTOR - A fin transistor includes: a substrate; a plurality of semiconductor fins formed on the substrate; a gate electrode covering a channel region of the semiconductor fins; and a member as a stress source for the semiconductor fins included in a region of the gate electrode and the region provided between the semiconductor fins, and the member being made of a different material from the gate electrode. | 06-18-2009 |
20090267159 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate, a p-channel MIS transistor formed on the substrate, the p-channel transistor having a first gate dielectric formed on the substrate and a first gate electrode layer formed on the first dielectric, and an n-channel MIS transistor formed on the substrate, the n-channel transistor having a second gate dielectric formed on the substrate and a second gate electrode layer formed on the second dielectric. A bottom layer of the first gate electrode layer in contact with the first gate dielectric and a bottom layer of the second gate electrode layer in contact with the second gate dielectric have the same orientation and the same composition including Ta and C, and a mole ratio of Ta to a total of C and Ta, (Ta/(Ta+C)), is larger than 0.5. | 10-29-2009 |
20140084388 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - According to one embodiment, a semiconductor device includes a gate electrode formed on a substrate with a gate insulation film interposed therebetween, and a source region of a first conductivity type and a drain region of a second conductivity type reverse to the first conductivity type, which are formed so as to hold the gate electrode therebetween within the substrate. The work function of a first region on the source region side within the gate electrode is shifted toward the first conductivity type as compared to the work function of a second region on the drain region side within the gate electrode. | 03-27-2014 |
20140175553 | MOS SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a MOS semiconductor device comprises a first gate insulating film formed on a region of part of a channel of a semiconductor substrate, in which a transistor is to be formed, a first gate electrode formed on the first gate insulating film, a second gate insulating film formed on remaining part of the channel, the second gate insulating film including an impurity added to the second gate insulating film to increase a threshold value of the channel immediately under the second gate insulating film, and a second gate electrode formed on the second gate insulating film. | 06-26-2014 |
20150076553 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present embodiment includes a semiconductor layer. A gate dielectric film is provided on a surface of the semiconductor layer. A gate electrode is provided on the semiconductor layer via the gate dielectric film. A drain layer of a first conductivity type is provided in a part of the semiconductor layer on a side of a first end of the gate electrode. A source layer of a second conductivity type is provided in a part of the semiconductor layer on a side of a second end of the gate electrode and below the gate electrode. The source layer has a substantially uniform impurity concentration at the part of the semiconductor layer below the gate electrode. Voltages of a same polarity are applied to the gate electrode and the drain layer. | 03-19-2015 |
20150129925 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer opposing to a bottom surface and a side surface of a gate electrode. An insulation film is provided between the bottom surface of the gate electrode and the semiconductor layer and between the side surface of the gate electrode and the semiconductor layer. A first conduction-type drain layer is provided in the semiconductor layer on a side of an end part of one of the bottom surface and the side surface of the gate electrode. A second conduction-type source layer is provided in the semiconductor layer opposing to the other one of the bottom surface and the side surface of the gate electrode. A second conduction-type extension layer is provided in the semiconductor layer opposing to a corner part between the side surface and the bottom surface of the gate electrode and has a lower impurity concentration than that of the source layer. | 05-14-2015 |
20150129960 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a semiconductor substrate, and first and second transistors of first and second conductivity types on the substrate. The first transistor includes a first gate electrode on the substrate, a first source region of the second conductivity type and a first drain region of the first conductivity type disposed to sandwich the first gate electrode, and a first channel region of the first or second conductivity type disposed between the first source region and the first drain region. The second transistor includes a second gate electrode on the substrate, a second source region of the first conductivity type and a second drain region of the second conductivity type disposed to sandwich the second gate electrode, and a second channel region disposed between the second source region and the second drain region and having the same conductivity type as the first channel region. | 05-14-2015 |
20150228787 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a semiconductor layer. A first conductivity-type source layer is provided in the semiconductor layer. A second conductivity-type drain layer is provided in the semiconductor layer. A gate dielectric film is provided on the semiconductor layer between the source layer and the drain layer. A gate electrode includes a first gate part partially provided on the gate dielectric film on a side of the source layer and a second gate part partially provided on the gate dielectric film on a side of the drain layer. A length of crystal grains of the first gate part in a channel length direction is longer than that of crystal grains of the second gate part in the channel length direction. | 08-13-2015 |
20150243769 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a semiconductor layer. A gate dielectric film is provided on the semiconductor layer. A gate electrode is provided above the semiconductor layer via the gate dielectric film. A first conductivity-type drain layer is provided in the semiconductor layer on a one-end side of the gate electrode. A second conductivity-type source layer is provided in the semiconductor layer on an other-end side of the gate electrode and below at least a part of the gate electrode. A source extension layer faces at least a part of a bottom surface of the gate electrode via the gate dielectric film and has an impurity concentration lower than that of the source layer. A first conductivity-type pocket layer is provided in the semiconductor layer between the source extension layer and the drain layer. The pocket layer contacts the source extension layer and is separated from the drain layer. | 08-27-2015 |
20150243786 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a first conductivity-type first source layer provided in a semiconductor layer. A second conductivity-type drain layer is provided in the semiconductor layer. A gate dielectric film is provided on the semiconductor layer between the first source layer and the drain layer. A first gate structure is provided on the gate dielectric film. A drain-side adjacent structure is adjacent to the first gate structure on a side of the drain layer of the first gate structure. A stress layer covers at least the first gate structure, the drain-side adjacent structure, and the first source layer. The stress layer has strain. A first gap between the first gate structure and the drain-side adjacent structure is narrower than four times a film thickness of the stress layer. The stress layer covers the first source layer along a channel-direction longer than the first gap. | 08-27-2015 |