Onishi, Yokohama-Shi
Kazuo Onishi, Yokohama-Shi JP
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20100136975 | PORTABLE TERMINAL AND ITS COMMUNICATION METHOD, AND WIRELESS NETWORK SYSTEM - A portable terminal capable of reliably carrying out reselection even though power consumption is reduced and thereby increasing the chance to wait for connection to the upper-layer communication system so as to realize a long-time communication system so as to realize a long-time standby and to enable an increase of the traffic efficiency. A portable terminal communication method and a wireless network system are also disclosed. The portable terminal ( | 06-03-2010 |
Masatake Onishi, Yokohama-Shi JP
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20080264717 | Sound-wave path-length correcting structure for speaker system - A sound-wave path-length correcting structure for a speaker system includes a sound source and a horn. The horn has a sound-wave path-length correcting throat portion. The sound-wave path-length correcting throat portion corrects a sound-wave path-length of a sound wave input from an inlet opening thereof in the sound path, and emits the sound wave from an outlet opening thereof. The sound path is defined by a first side surface with a concave curved surface and a second side surface with a convex curved surface that face each other with a space, and a third side surface and a fourth side surface that face each other with a space. The third side surface and the fourth side surface are formed so that their surfaces gradually widen as the surfaces advance from the inlet opening to the outlet opening of the sound-wave path-length-correcting throat portion. | 10-30-2008 |
Masato Onishi, Yokohama-Shi JP
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20100258139 | NON-COMBUSTIBLE SMOKING ARTICLE WITH CARBONACEOUS HEAT SOURCE - A non-combustible smoking article includes an aerosol-generating part including an aerosol-generating substance configured to generate aerosol by heating, and a heat source physically separated from the aerosol-generating part and disposed at an tip end of the aerosol-generating part, and configured to heat the aerosol-generating substance by combustion heat, in which the heat source includes at least one carbonaceous strip. | 10-14-2010 |
Takeshi Onishi, Yokohama-Shi JP
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20120061469 | IMAGE PROCESSING APPARATUS, IDENTIFICATION APPARATUS, ELECTRONIC WRITING INSTRUMENT, METHOD FOR DETERMINING BIT SEQUENCE AND COMPUTER READABLE MEDIUM - An image processing apparatus includes: an image acquisition unit that acquires a repeated image read from a medium having the repeated image printed thereon, the repeated image being formed by repeatedly arranging an image representing a specific bit sequence; an information acquisition unit that acquires plural state information pieces respectively indicating reading states of plural images included in the repeated image acquired by the image acquisition unit; a detection unit that detects plural bit sequences respectively from the plural images included in the repeated image acquired by the image acquisition unit; and a determination unit that determines the specific bit sequence on the basis of the plural bit sequences detected by the detection unit and the plural state information pieces acquired by the information acquisition unit. | 03-15-2012 |
20120062960 | IMAGE PROCESSING APPARATUS, IDENTIFICATION APPARATUS, METHOD FOR DETERMINING BIT SEQUENCE AND COMPUTER READABLE MEDIUM - An image processing apparatus includes: an image acquisition unit that acquires an image read from a medium having the image printed thereon, the image representing a specific bit sequence; an information acquisition unit that acquires a state information piece indicating a reading state of the image acquired by the image acquisition unit; a detection unit that detects a bit sequence from the image acquired by the image acquisition unit; and a determination unit that determines the specific bit sequence on the basis of the bit sequence detected by the detection unit and the state information piece acquired by the information acquisition unit. | 03-15-2012 |
Taku Onishi, Yokohama-Shi JP
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20090019125 | RECEPTION NOTIFICATION CONTROL METHOD AND SYSTEM - A reception notification control method is provided in which an information server that stores information addressed to reception terminals and performs reception notification, via a network apparatus, on each of the reception terminals to which the information stored in the information server is addressed. After receiving, via the network apparatus, a predetermined connection request from a reception terminal to which stored information is addressed, the information server performs the reception notification on the reception terminal. | 01-15-2009 |
20090112742 | COMMUNICATION CONTROL METHOD IN CONNECTION-ORIENTED COMMUNICATION, RELATED TRANSFER DEVICE, AND BILLING MANAGEMENT DEVICE - A gateway server | 04-30-2009 |
Takuma Onishi, Yokohama-Shi JP
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20090070082 | ANALYSIS METHOD, PROGRAM FOR PERFORMING THE METHOD, AND INFORMATION PROCESSING APPARATUS - An analysis method of analyzing a discharge phenomenon in an information processing apparatus having a memory includes calculating differences in potential between nodes on a first surface of a meshed simulation model and the corresponding nodes on a second surface thereof based on a predetermined amount of charge of each node before the discharge and the permittivity of each element of the simulation model; storing information concerning a pair of nodes having the difference in potential which exceeds a Paschen voltage determined from the distance between the nodes; and analyzing an amount of charge moved due to the discharge and electric potential distribution after the discharge based on the stored information and the amount of charge of each node before the discharge and storing the analyzed amount of charge and the electric potential distribution. | 03-12-2009 |
20090112528 | APPARATUS AND METHOD FOR ANALYSIS - An area in which a model of a soft medium is moved is divided into a plurality of elements. In response to an update of simulation time, parameters about the model of the soft medium are shifted to elements at a position to which the soft medium is to be conveyed. After the parameters are shifted, the shape of the model of the soft medium is calculated. The elements need not be redivided by shifting the parameters to the elements at the position, to which the soft medium is to be conveyed. | 04-30-2009 |
Tatsumi Onishi, Yokohama-Shi JP
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20080206520 | Surface-modified metal member and method of modifying metal surface - A surface-modified member including a metal base, a surface modification layer formed on at least a part of a surface of the metal base, the surface modification layer containing a metal hydroxide, and at least one of a curable resin layer, an ink layer and a coating material layer which is provided on at least a portion of the surface modification layer. A method of modifying a surface of a metal member, including applying an energy to at least a part of the surface of the metal member to produce a metal hydroxide on the surface of the metal member. | 08-28-2008 |
Teruo Onishi, Yokohama-Shi JP
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20080265902 | SPECIFIC ABSORPTION RATE MEASUREMENT SYSTEM AND METHOD - A disclosed specific absorption rate measurement system according to an embodiment of the present invention measures a specific absorption rate of electromagnetic waves from a radiating source absorbed in a dielectric medium. The system includes a measurement portion that measures a first electric field vector on an observation surface which is a two-dimensional surface in the dielectric medium; an electric field calculation portion that calculates a second electric field vector in a point excluded from the observation surface in accordance with electric field components of the first electric field vector measured on the observation surface, the electric field components being parallel to the observation surface; and a calculation portion that calculates the specific absorption rate from the calculated second electric field vector. | 10-30-2008 |
20130077522 | MOBILE COMMUNICATION TERMINAL - A mobile communication terminal includes: a transmission power controlling unit for performing transmission power control such that the sum of channel transmission powers or the sum of the ratios of the channel transmission powers to threshold values of the corresponding channels is a predetermined target value; an average transmission power calculating unit for calculating the average value of the sum of the channel transmission powers in a set monitoring period or the average value of the sum of the ratios of the channel transmission powers in the set monitoring period to the threshold values of the corresponding channels; and a transmission power suppressing unit for performing reduction control of the transmission powers such that these average values in a set control period are each equal to or less than the threshold value. | 03-28-2013 |
Toru Onishi, Yokohama-Shi JP
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20110221808 | METHOD FOR OBTAINING REACTION SOLUTION DOT SHAPE INFORMATION - A reaction solution dot shape information obtainment method to be employed for a transfer type inkjet recording method including applying a reaction solution to aggregate a color material component contained in an ink onto an image forming surface of an intermediate transfer member, forming an intermediate image by applying the ink containing the color material component onto the image forming surface of the intermediate transfer member onto which the reaction solution is applied, and forming an image by transferring the intermediate image from the image forming surface to a recording medium by pressing the recording medium to the image forming surface on which the intermediate image is formed, includes measuring a shape of an ink dot of the intermediate image formed on the image forming surface of the intermediate transfer member or the image transferred onto the recording medium, and obtaining shape information of a reaction solution dot from a measurement result of the ink dot shape. | 09-15-2011 |
20120098882 | RECORDING APPARATUS - In a transfer inkjet recording system, a cooling unit is configured to independently cool multiple locations in a region in which an intermediate image of an intermediate transfer medium is formed in accordance with one of a temperature of the intermediate transfer medium after being heated by a heating unit or in accordance with image data. | 04-26-2012 |
Yasunobu Onishi, Yokohama-Shi JP
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20110039214 | Pattern Forming Method and Method of Manufacturing Semiconductor Device - A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film. | 02-17-2011 |
20110229826 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS - This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure. | 09-22-2011 |
Yoshinari Onishi, Yokohama-Shi JP
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20140111824 | INFORMATION PROCESSING APPARATUS FOR CUSTOMIZING PRINTER DRIVER PROGRAM, AND METHOD OF CUSTOMIZING PRINTER DRIVER PROGRAM - According to this invention, an information processing apparatus which customizes a device driver for controlling an image forming apparatus includes an issuing unit which issues identification information for specifying a customized driver, and a storage unit which stores, in association with the customized driver, the identification information issued by the issuing unit. | 04-24-2014 |
Yutaka Onishi, Yokohama-Shi JP
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20080253422 | Surface emitting semiconductor laser - A surface emitting semiconductor laser comprises first and second distributed Bragg reflectors, an active layer and a junction region. The first distributed Bragg reflector includes first III-V compound semiconductor layers and second III-V compound semiconductor layers, and the first and second III-V compound semiconductor layers are alternately arranged. The second distributed Bragg reflector includes a first portion and a second portion. The first portion including third III-V compound semiconductor layers and fourth III-V compound semiconductor layers, and the third and fourth III-V compound semiconductor layers are alternately arranged. The second portion includes first insulating layers and second insulating layers, and the first and second insulating layers are alternately arranged. The active layer is provided between the first distributed Bragg reflector and the second distributed Bragg reflector. The active layer is made of III-V compound semiconductor. The first portion of the second distributed Bragg reflector is provided between the active layer and the second portion. The junction region includes a tunnel junction, and the junction region is provided between the active layer and the second distributed Bragg reflector. | 10-16-2008 |
20080285612 | Surface emitting semiconductor laser - In a surface emitting semiconductor laser, a first distributed Bragg reflector includes first and second semiconductor layers of a first conductive type, and the first and second semiconductor layers are alternately arranged. A second distributed Bragg reflector includes first and second portions, and the first and second portions are arranged in a direction of a predetermined axis. The first portion is made of semiconductor, and the second portion is made of dielectric. An active layer is provided on the first distributed Bragg reflector, and the first portion of the second distributed Bragg reflector is provided between the active layer and the second portion of the second distributed Bragg reflector. The first distributed Bragg reflector, the active layer and the second distributed Bragg reflector are sequentially arranged in the direction of the predetermined axis. A III-V compound semiconductor region is provided on the first distributed Bragg reflector so as to surround the first portion of the second distributed Bragg reflector. | 11-20-2008 |
20090080487 | Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency - A vertical cavity surface emitting laser diode (VCSEL) is disclosed, which reduces the light scattering by the step formed at the interface between the dielectric DBR and the semiconductor that reflects the mesa shape of the tunnel junction. The dielectric DBR of the invention includes a plurality of first films with relatively smaller refractive index and a plurality of second films with relatively larger refractive index. These first and second films are alternately stacked to each other to cause the periodic structure of the refractive indices. The VCSEL of the invention, different from the conventional device, provides the dielectric film with relatively larger refractive index that directly comes in contact with the semiconductor to set the node of the optical standing wave at the interface between the dielectric DBR and the semiconductor. | 03-26-2009 |
20090097518 | Vertical cavity surface emitting laser diode and a method for producing the same - A vertical cavity surface emitting laser diode (VCSEL) with a new structure is disclosed. The VCSEL of the invention provides the active layer, the first spacer layer, the tunnel junction, the second spacer layer burying the tunnel junction. Only the first spacer layer is ion-implanted to form a high-resistive region around the tunnel junction. The current injected into the second spacer layer is confined by the tunnel junction to reach the active layer, which reduces the increase of the parasitic resistance of the device. The high-resistive region around the tunnel junction reduces the parasitic capacitance of the device. | 04-16-2009 |
20090141766 | Surface emitting semiconductor laser - In a surface emitting semiconductor laser, the primary surface of a substrate includes first to third areas. The first and second areas are contiguous to each other, and the third area surrounds the first and second areas. A first DBR is provided on the substrate. An active layer is provided on the following: the first DBR; the first and second areas; and a boundary therebetween. A first semiconductor spacer layer is provided on the active layer. A second semiconductor spacer layer is provided on the first semiconductor spacer layer. The conductivity type of the first semiconductor spacer layer is different from that of the second semiconductor spacer layer. A tunnel junction region is on the first area and between the first and the second semiconductor spacer layers. The active layer, the first semiconductor spacer layer, the second semiconductor spacer layer, the tunnel junction region constitutes an optical cavity mesa, which includes low-resistance and high-resistance regions located on the first area and the second area, respectively. The low-resistance region includes the tunnel junction region. A second DBR is on the second semiconductor spacer layer and the first area. A first electrode is on the first and second areas and the boundary. | 06-04-2009 |
20090213892 | VCSEL WITH REDUCED LIGHT SCATTERING WITHIN OPTICAL CAVITY - A VCSEL with a structure able to reduce the scattering within the optical cavity and its manufacturing method are disclosed. The VCSEL of the present invention provides, on the semiconductor substrate, the first DBR, the active layer, the p-type spacer layer, the heavily doped p-type mesa, the heavily doped n-type layer, the first n-type spacer and the second DBR in this order. The heavily doped n-type layer, which is formed so as to cover the p-type spacer layer and the heavily doped p-type mesa, forms the tunnel junction with respect to the heavily doped p-type mesa. Because the height, which is appeared in the surface of the n-type spacer layer, reflects the height of the heavily doped p-type mesa and is comparatively small, the light scattering between the second DBR and the n-type spacer layer is suppressed. | 08-27-2009 |
20100014551 | VERTICAL CAVITY SURFACE EMITTING LASER - A VCSEL includes a GaAs substrate; a first semiconductor distributed Bragg reflector (DBR) disposed on the GaAs substrate and including a first part and a second part on the first part; a semiconductor mesa disposed on the first semiconductor DBR and including an active layer; and a second DBR on the semiconductor mesa. The first part is composed of an undoped semiconductor material. The second part includes third III-V compound semiconductor layers composed of a material containing indium and gallium as the group III element and phosphorus as the group V element and fourth III-V compound semiconductor layers composed of a material containing gallium as the group III element and arsenic as the group V element. The third III-V compound semiconductor layers and the fourth III-V compound semiconductor layers are doped with an n-type impurity. | 01-21-2010 |
20110164642 | LASER DIODE WITH RIDGE WAVEGUIDE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - An LD with an improved heat dissipating function in the edge regions is disclosed. The LD provides the core region including the active layer and extending whole of the substrate, and the ridge waveguide structure on the core region that extends in a direction along which the light generated in the active layer is guided. The ridge waveguide structure is buried by a thick resin layer in both sides thereof, but the resin layer is removed in the edge regions close to respective facets of the LD. | 07-07-2011 |
20120093190 | SEMICONDUCTOR LASER DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor laser device includes a first semiconductor stack portion that includes a grating layer and an active layer provided on the grating layer. The grating layer has a first region and second region; a diffraction grating provided in the first region; a semiconductor ridge structure portion provided on the first semiconductor stack portion and extending in a first direction; and a pair of first trenches provided along both side faces of the semiconductor ridge structure portion with the first region of the grating layer being located between the trenches. The first trenches penetrate through the grating layer. The first region of the grating layer has an end extending in a second direction intersecting with the first direction. The end of the first region of the grating layer reaches a trench. | 04-19-2012 |
20120094408 | METHOD FOR PRODUCING SURFACE EMITTING SEMICONDUCTOR DEVICE - A method for producing a surface emitting semiconductor device includes a step of forming a semiconductor stacked structure including an active layer, a first semiconductor layer containing aluminum on the active layer, and a DBR portion, on the first semiconductor layer, to include alternating stacked second semiconductor layers and third semiconductor layers having different aluminum contents; a step of forming a mesa portion by etching the DBR portion and the first semiconductor layer; an oxidation step of oxidizing the first semiconductor layer from a side face of the mesa portion toward the inside of the mesa portion to form an annular oxidized region inside the first semiconductor layer; a first etching step of selectively etching an oxidized region formed in the DBR portion; and a second etching step of removing a peripheral portion of the DBR portion. | 04-19-2012 |
20120214265 | METHOD FOR FORMING COATING FILM ON FACET OF SEMICONDUCTOR OPTICAL DEVICE - The method includes the steps of preparing an epitaxial wafer by forming a multilayer semiconductor structure on a main surface of a substrate; forming stripe electrodes and bonding pads on the multilayer semiconductor structure with the bonding pads being respectively electrically connected to the stripe electrodes; forming a projection portion on the multilayer semiconductor structure; forming laser diode (LD) bars by cutting the epitaxial wafer; arranging the LD bars on a support surface such that a side surface thereof is oriented normal to the support surface, and disposing spacers between the LD bars; and forming a coating film on the side surface. The projection portion has a height, measured from the main surface of the substrate, greater than a height of the stripe electrodes. Furthermore, the laser diode bar has at least one projection portion. | 08-23-2012 |
20120224820 | SPOT-SIZE CONVERTER - A spot-size converter includes a cladding layer having a principal surface; a first core layer disposed on the principal surface and having a light input/output portion and a first transition portion having a width W | 09-06-2012 |
20150085292 | WAVELENGTH MONITOR - Provided are an optical element and a wavelength monitor capable of detecting a wavelength with high accuracy and at high speed while suppressing a size. The optical element includes: a branch waveguide section configured to branch an input light beam and generate two outputs routed via paths having mutually different optical path lengths; and an optical synthesis section configured to synthesize the two outputs and output two optical signals having different light intensities with regards to a wavelength of the input light beam and exhibiting a mutual phase difference. | 03-26-2015 |