Patent application number | Description | Published |
20130028784 | COPPER ALLOY WROUGHT MATERIAL, COPPER ALLOY PART, AND METHOD OF PRODUCING A COPPER ALLOY WROUGHT MATERIAL - A copper alloy wrought material, containing 1.5 to 7.0 mass % of Ni, 0.3 to 2.3 mass % of Si, 0.02 to 1.0 mass % of S, and optionally at least one selected from the group consisting of Sn, Mn, Co, Zr, Ti, Fe, Cr, Al, P, and Zn in a total amount of 0.05 to 2.0 mass %, with the balance being Cu and unavoidable impurities, wherein sulfide particles, which contribute to machinability, are dispersed therein, in which an average diameter of the sulfide particles is 0.1 to 10 μm, and in which an area ratio of the sulfide particles is 0.1 to 10%, and wherein the copper alloy wrought material has a tensile strength of 500 MPa or greater and an electrical conductivity of 25% IACS or higher. | 01-31-2013 |
Patent application number | Description | Published |
20120325138 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled. | 12-27-2012 |
20130009170 | EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE - An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm | 01-10-2013 |
20130152853 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus | 06-20-2013 |
20130247816 | FILM-FORMING APPARATUS FOR THE FORMATION OF SILICON CARBIDE AND FILM-FORMING METHOD FOR THE FORMATION OF SILICON CARBIDE - A film-forming apparatus and method for the formation of silicon carbide comprising, a film-forming chamber to which a reaction gas is supplied, a temperature-measuring unit which measures a temperature within the chamber, a plurality of heating units arranged inside the chamber, an output control unit which independently controls outputs of the plurality of heating units, a substrate-transferring unit which transfers a substrate into, and out of the chamber, wherein the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process is completed, when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the chamber, then at least one output of the plurality of heating units turned off or lowered, is turned on or raised, and the substrate is transferred out of the film-forming chamber by the substrate-transferring unit. | 09-26-2013 |
20140287539 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD - At the time of transporting a substrate into or from a space where a film formation process is performed, the space where the film formation process is performed, a space where a lower heater | 09-25-2014 |
20150090693 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD - A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole. | 04-02-2015 |
20150299898 | SUSCEPTOR PROCESSING METHOD AND SUSCEPTOR PROCESSING PLATE - A susceptor processing method according to an embodiment includes: placing a plate on a susceptor arranged in a film forming chamber; heating the susceptor in order to have a temperature higher than that of the plate by using a main heater arranged below the susceptor and an auxiliary heater arranged in an upper part of the film forming chamber, and subliming a SIC film having been formed on a surface of the susceptor and adhering the sublimed SIC on the plate; and transporting the plate from the film forming chamber, the plate having SIC adhered thereon. | 10-22-2015 |
20150329967 | FILM-FORMING MANUFACTURING APPARATUS AND METHOD - It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters. | 11-19-2015 |
Patent application number | Description | Published |
20090186508 | Connector - A connector is matable with a mating connector which has an engaged portion. The connector comprises a support portion and a lock member pivotally supported by the support portion. The lock member comprises a body portion, a lock portion, a spring portion and an operated portion. The body portion comprises a first predetermined portion which has a plate-like shape and is pivotally supported by the support portion. The lock portion is movable between a lock position and a release position in response to a pivotal movement of the body portion. The lock portion comprises an engaging portion engagable with the engaged portion. The engagement of the engaging portion with the engaged portion is locked when the lock portion is positioned at the lock position, while the engagement is released when the lock portion is positioned at the release position. The spring portion urges the lock portion to move toward the lock position. The spring portion extends from the body portion and has a second predetermined portion, which is parallel to the first predetermined portion but is different in position from the first predetermined portion in a direction perpendicular to the first and the second predetermined portions. The operated portion is formed and arranged to force the lock portion to move to the release position when the operated portion is operated. | 07-23-2009 |
20090258529 | CONNECTOR - A connector which makes it possible to prevent contacts from being removed without increasing press-in force of the contacts. A crank-shaped portion or protruding portion is formed, as a retaining portion, on an linking portion which links a contact portion and a connection portion of each contact. A housing for holding a plurality of the contacts is comprised of a front housing in which contact-side portions of the contacts are disposed, and a rear housing in which connection-side portions of the same are disposed. When the front housing and the rear housing are assembled, the crank-shaped portion and the protruding portions are brought into abutment with the rear housing. | 10-15-2009 |
20110086553 | CONNECTOR HAVING CONTACTS WITH A LINKAGE PORTION HAVING A WIDTH SMALLER THAN THAT OF THE CONTACT PORTION - A connector capable of maintaining contact reliability even with reduced arrangement pitch of contacts. First and second contacts are alternately arranged on a housing along contact arrangement direction orthogonal to direction of fitting the housing to a receptacle connector. A first contact portion, first bending portion, and first connecting portion connected to a coaxial cable, of each first contact are disposed on an upper surface, front portion and rear portion of the arranging portion, respectively. A linkage portion connecting the first bending and connecting portions, and a second contact portion continuous with a second connecting portion of each second contact are disposed on a lower surface of the arranging portion. A second bending portion disposed on the front portion is continuous with the second contact portion. The linkage portion is smaller in width in the arrangement direction than the first and second contact portions. | 04-14-2011 |
Patent application number | Description | Published |
20100009550 | METHOD AND APPARATUS FOR MODIFYING INTEGRATED CIRCUIT BY LASER - [PROBLEMS] To provide a method and an apparatus for cutting a conductive link of a redundant circuit in a semiconductor circuit. | 01-14-2010 |
20120056181 | METHOD OF MANUFACTURING ELECTRONIC ELEMENT AND ELECTRONIC ELEMENT - There is provided a method of manufacturing an electronic element for forming the electronic element including one or more wiring layers and an organic insulating layer stacked on a substrate. The method includes a wiring layer formation step of forming the wiring layer on the substrate; an organic insulating layer formation step of forming an organic insulating layer on the wiring layer; and an irradiation step of irradiating a short-circuit portion of the wiring layer through the organic insulating layer with a laser beam having a wavelength transmissive through the organic insulating layer. | 03-08-2012 |
20140217288 | PHOTOCONDUCTIVE ELEMENT, LENS, TERAHERTZ EMISSION MICROSCOPE AND METHOD OF PRODUCING DEVICE - [Object] To provide a terahertz emission microscope being capable of improving a detection accuracy of a terahertz electromagnetic wave, a photoconductive element and a lens used therefor, and a method of producing a device. | 08-07-2014 |
20140332687 | OPTICAL SYSTEM, TERAHERTZ EMISSION MICROSCOPE, AND METHOD OF MANUFACTURING A DEVICE - There is provided an optical system, including: an extracting section, the refractive index of the extracting section being approximately the same as the refractive index of an observed object, the extracting section being optically coupled with the observed object to thereby extract a terahertz electromagnetic wave generated from the observed object; and an ellipsoidal reflector surface having a first focal point and a second focal point, the observed object being to be arranged on the first focal point, a photoconductive device being on the second focal point, the photoconductive device being configured to detect the terahertz electromagnetic wave extracted by the extracting section, the ellipsoidal reflector surface guiding the extracted terahertz electromagnetic wave to the photoconductive device. | 11-13-2014 |
Patent application number | Description | Published |
20100063826 | COMPUTATION APPARATUS AND METHOD, QUANTIZATION APPARATUS AND METHOD, AUDIO ENCODING APPARATUS AND METHOD, AND PROGRAM - A computation apparatus includes: a range calculation section for calculating a range of an input value that can give a predetermined discrete value obtained by discretizing a computation result of a nonlinear operation; and a discrete value output section for outputting, when the input value is input, the predetermined discrete value corresponding to the range in which the input value that has been input is contained. | 03-11-2010 |
20100082589 | COMPUTATION APPARATUS AND METHOD, QUANTIZATION APPARATUS AND METHOD, AND PROGRAM - A computation apparatus includes a range table creation unit configured to create a range table in which a discrete value of a computation result obtained by applying a nonlinear computation on an input value corresponds to a range of the input value which may take the discrete value, and a search unit configured to search, when the input value is input, in the range table, for the range in which the input value is included and output the discrete value corresponding to the searched range. | 04-01-2010 |
20100082717 | COMPUTATION APPARATUS AND METHOD, QUANTIZATION APPARATUS AND METHOD, AND PROGRAM - A computation apparatus includes an inverse conversion table creation unit configured to create an inverse conversion table in which discrete values obtained by applying a predetermined conversion on predetermined data correspond to inverse conversion values obtained by applying a conversion inverse to the predetermined conversion on the discrete values, a range decision unit configured to decide in which range the predetermined data is included when the predetermined data is input among ranges where the inverse conversion values adjacent in the inverse conversion table are set as border values, and a discrete value decision unit configured to decide the discrete value corresponding to the inverse discrete value whose value is close to the predetermined data among the inverse conversion values serving as the border values of the range decided by the range decision unit. | 04-01-2010 |
20100180268 | ARITHMETIC UNIT, PROCESSOR, COMPILER AND COMPILING METHOD - An arithmetic unit which includes: a data supply section which supplies floating-point type object data to which a sign is to be added and condition data which includes a condition under which the sign is added; a sign data generating section which extracts the condition included in the condition data and generates sign data for adding the sign to the object data on the basis of the extracted condition; and an integer arithmetic operation section which performs an integer arithmetic operation while treating the object data as integer type data so as to add the sign to the object data on the basis of the sign data and the object data. | 07-15-2010 |
Patent application number | Description | Published |
20080258264 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen. | 10-23-2008 |
20090189189 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An exemplary embodiment provides a semiconductor device, in which a junction leakage current is reduced in MISFET including a source/drain impurity layer formed in a semiconductor region containing Ge, and a semiconductor device manufacturing method. The semiconductor device includes a channel region which is formed in a semiconductor substrate; a gate insulator which is formed on a surface of the channel region; a gate electrode which is formed on the gate insulator; and source/drain impurity layers which are formed on both sides of the channel region. In the semiconductor device, at least part of the source/drain impurity layer is formed in a semiconductor region containing Ge in the semiconductor substrate, and at least an element selected from a group including S, Se, and Te is contained in the semiconductor region which is deeper than a junction depth of the source/drain impurity layer. | 07-30-2009 |
20100065886 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to an aspect of the present invention, there is provided a semiconductor device including: a substrate that includes a semiconductor region including Ge as a primary component; a compound layer that is formed above the semiconductor region, that includes Ge and that has a non-metallic characteristic; an insulator film that is formed above the compound layer; an electrode that is formed above the insulator film; and source/drain regions that is formed in the substrate so as to sandwich the electrode therebetween. | 03-18-2010 |
20100187503 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an NMISFET region. The NMISFET region includes a Ge nano wire having a triangular cross section along a direction perpendicular to a channel current direction, wherein two of surfaces that define the triangular cross section of the Ge nano wire are (111) planes, and the other surface that define the triangular cross section of the Ge nano wire is a (100) plane; and an Si layer or an Si | 07-29-2010 |
20100213532 | SEMICONDUCTOR DEVICES - A semiconductor device is provide, which includes a semiconductor region containing Ge as a major component, an insulating film formed on the semiconductor region, and a metallic film formed on the insulating film. At least a portion of the insulating film in contact with the semiconductor region is constituted by an oxide containing at least one rare-earth element M | 08-26-2010 |
Patent application number | Description | Published |
20100275547 | Fromwork panel - [Problem to be Solved] The present invention is a formwork panel which can be utilized as an ordinary flat plate-shaped formwork and is further provided with excellent flexibility of design for forming a corner portion for a formwork when the formwork panel is utilized as the corner portion and prevents concrete or mortal from leaking from an unintended position. | 11-04-2010 |
20120195693 | RETAINING WALL AND CONSTRUCTION METHOD THEREFOR - An object of the invention is to provide a retaining wall and a construction method therefor whereby fixation between a steel sheet pile wall and a formwork panel to form the retaining wall is made easy, and can be reliably made, so that construction schedule reduction is achieved. The retaining wall is composed of steel sheet piles | 08-02-2012 |
20130008125 | CONSTRUCTION METHOD FOR NEW UNDERGROUND STRUCTURE - [Problem] An object of the present invention is to provide a construction method for a new underground structure, the method achieving reduction in the load imposition of a new underground framework on an existing underground concrete framework, and reduction in construction cost for constructing the new underground structure. | 01-10-2013 |
20130104468 | BACKFILL STRUCTURE AND BACKFILL CONSTRUCTION METHOD | 05-02-2013 |
20130119228 | ARCHITECTURE UNIT OF CONCRETE STRUCTURE AND ARCHITECTURE CONSTRUCTING METHOD THEREOF - An architecture unit of a concrete structure is formed by providing a pair of wall bodies facing each other substantially in parallel with each other on a foundation. The wall bodies are each composed of a porous steel-made formwork panel having large and small ribs formed on a surface thereof, a runner provided with a fitting groove fitted with lower ends of a plurality of formwork panels arranged side by side, and a cap fitted with upper ends thereof. A long-plate-like lower fixing member provided with ribs at both ends thereof is spanned and fixed on a lower face of the runner so as to be substantially perpendicular to the runner, and a long-plate-like upper fixing member provided with ribs at both ends thereof is spanned and fixed on a top face of the cap so as to be substantially perpendicular to the cap. | 05-16-2013 |