Patent application number | Description | Published |
20090127662 | GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE - A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10 | 05-21-2009 |
20090127663 | GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE FABRICATION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE - A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a group III nitride semiconductor crystal doped with silicon by using silicon tetrafluoride gas as doping gas, on the underlying substrate by vapor phase growth. | 05-21-2009 |
20090127664 | GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE FABRICATION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE - A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a first group III nitride semiconductor crystal doped with silicon by using silicon tetrachloride (SiCl | 05-21-2009 |
20100164070 | Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device - A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10 | 07-01-2010 |
20100314625 | GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture - Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass | 12-16-2010 |
20100322841 | III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substrate, Method of Manufacturing III-Nitride Single-Crystal Ingot, and Method of Manufacturing III-Nitride Single-Crystal Substrate - Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking. | 12-23-2010 |
20110132410 | GaxIn1-xN Substrate and GaxIn1-xN Substrate Cleaning Method | 06-09-2011 |
20120164058 | METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER - There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal | 06-28-2012 |