Patent application number | Description | Published |
20130075789 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device, comprising: a first semiconductor layer disposed on a substrate; a second semiconductor layer disposed on the first semiconductor layer; a lower insulating film disposed on the second semiconductor layer; a p-type electroconductive oxide film disposed on the lower insulating film; an upper insulating film disposed on the oxide film; and a gate electrode disposed on the upper insulating film, wherein the lower insulating film under the gate electrode has a depressed portion. | 03-28-2013 |
20130256686 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer formed over a substrate; a second semiconductor layer formed over the first semiconductor layer; an insulating film including a first insulating film formed over the second semiconductor layer, a second insulating film, and a third insulating film stacked sequentially over the first insulating film, and an electrode formed over the insulating film, wherein, in the first insulating film, a region containing halogen ions is formed under a region provided with the electrode, and the third insulating film contains a halogen. | 10-03-2013 |
20130256690 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE - A semiconductor device may include a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode in contact with the first semiconductor layer or the second semiconductor layer, an opening formed in the second semiconductor layer, an insulating film formed on an inner surface of the opening formed in the second semiconductor layer and above the second semiconductor layer, a gate electrode formed in the opening via the insulating film, and a protective film formed on the insulating film and including an amorphous film containing carbon as a major component. | 10-03-2013 |
20140092636 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gate electrode is formed above a compound semiconductor stacked structure, and the gate electrode includes a stack of a TaN:Al layer in which Al is solid-dissolved in TaN, a TaAlN layer made of a compound of TaN and Al, and an Al layer. | 04-03-2014 |
20140264364 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, a first insulation layer formed on the second semiconductor layer, the first insulation layer being formed of a material that includes SiO | 09-18-2014 |
20140346526 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate; a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer; an insulating layer formed on the second semiconductor layer; a source electrode and a drain electrode formed on the second semiconductor layer; and a gate electrode formed on the insulating layer. The insulating layer is formed of a material including an oxide and is formed by laminating a first insulating layer and a second insulating layer in a positioning order of the first insulating layer followed by the second insulating layer from a side of the second semiconductor layer, and an amount of hydroxyl groups included in per unit volume of the first insulating layer is less than an amount of hydroxyl groups included in per unit volume of the second insulating layer. | 11-27-2014 |
20150162413 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes first, a second, and third semiconductor layers respectively made of a nitride semiconductor and stacked on a substrate, a drain electrode formed on the third semiconductor layer, a gate electrode formed on the third semiconductor layer, and a source electrode formed within an opening penetrating the third and second semiconductor layers and exposing the first semiconductor layer. The source electrode includes a first conductor layer in contact with the first semiconductor layer, and a second conductor layer stacked on the first conductor layer and in contact with the second semiconductor layer. A work function of a material forming the first conductor layer is smaller than that of a material forming the second conductor layer. | 06-11-2015 |
Patent application number | Description | Published |
20080197453 | Semiconductor device and manufacturing method of the same - In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta | 08-21-2008 |
20090166815 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device including a compound semiconductor laminated structure having a plurality of compound semiconductor layers formed over a semiconductor substrate, a first insulation film covering at least a part of a surface of the compound semiconductor laminated structure, and a second insulation film formed on the first insulation film, wherein the second insulation film includes more hydrogen than the first insulation film. | 07-02-2009 |
20090194791 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A compound semiconductor device including an electron transport layer that is formed on a substrate and includes a III-V nitride compound semiconductor, a gate insulating film that is positioned above the compound semiconductor layer, and a gate electrode that is positioned on the gate insulating film. The gate insulating film includes a first insulating film that includes oxygen, at least a single metal element selected from a metal bonding with the oxygen and forming a metal oxide having a dielectric constant no less than 10, and at least a single metal element selected from Si and Al. | 08-06-2009 |
20100311233 | Semiconductor device manufacturing method - In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta | 12-09-2010 |
20110079771 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An intermediate layer composed of i-AlN is formed between a channel layer and an electron donor layer, a first opening is formed in an electron donor layer, at a position where a gate electrode will be formed later, while using an intermediate layer as an etching stopper, a second opening is formed in the intermediate layer so as to be positionally aligned with the first opening, by wet etching using a hot phosphoric acid solution, and a gate electrode is formed so that the lower portion thereof fill the first and second openings while placing a gate insulating film in between, and so that the head portion thereof projects above the cap structure. | 04-07-2011 |
20110079822 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A compound semiconductor device includes an electron transit layer; an electron supply layer formed over the electron transit layer; a first recessed portion and a second recessed portion formed in the electron supply layer; a chemical compound semiconductor layer including impurities that buries the first recessed portion and the second recessed portion and covers over the electron supply layer; a source electrode formed over the chemical compound semiconductor layer which buries the first recessed portion; a drain electrode formed over the chemical compound semiconductor layer which buries the second recessed portion; and a gate electrode formed over the electron supply layer between the source electrode and the drain electrode, wherein, in the chemical compound semiconductor layer, a concentration of impurities included below the source electrode and the drain electrode is higher than a concentration of impurities included near the gate electrode. | 04-07-2011 |
20110133206 | Compound semiconductor device - At a gate electrode formed on a compound semiconductor layer with a Schottky junction, a diffusion preventing layer made of Ti | 06-09-2011 |
20120032188 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. The protection film is formed to be higher, for instance, in hydrogen concentration than the protection film so that the protection film is higher in refractive index the protection film. The protection film is formed to cover a gate electrode and extend to the vicinity of the gate electrode on an electron supplying layer. The protection film is formed on the entire surface to cover the protection film. According to this configuration, the gate leakage is significantly reduced by a relatively simple configuration to realize a highly-reliable compound semiconductor device achieving high voltage operation, high withstand voltage, and high output. | 02-09-2012 |
20120091522 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition. | 04-19-2012 |
20120138944 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A compound semiconductor device includes: a compound semiconductor layer; a first film formed over the compound semiconductor layer, the first film being in a negatively charged state or a non-charged state at an interface with the compound semiconductor layer; a second film formed over the first film, the second film being in a positively charged state at an interface with the first film; and a gate electrode to be embedded in an opening formed in the second film. | 06-07-2012 |
20120138948 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer. | 06-07-2012 |
20120139630 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - On a surface of a compound semiconductor layer including inner wall surfaces of an electrode trench, an etching residue | 06-07-2012 |
20120149161 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is disclosed. A resist pattern is formed on a surface of a semiconductor layer in which a first layer and a second layer are sequentially formed on a substrate. A gate recess is formed by removing a part or the entire second layer in an opening area of the resist pattern. The resist pattern is removed. A dry etching residue attached to a bottom surface and lateral surfaces of the gate recess is removed after the resist pattern is removed. An insulating film is formed on the bottom surface, the lateral surfaces, and the semiconductor layer after the dry etching residue is removed. A gate electrode is formed via the insulating film on an area where the gate recess is formed. A source electrode and a drain electrode are formed on the semiconductor layer. | 06-14-2012 |
20120196419 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta | 08-02-2012 |
20120205662 | SEMICONDUCTOR DEVICE, POWER SUPPLY DEVICE, AMPLIFIER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer formed over a substrate; an insulating film formed over the semiconductor layer; and an electrode formed over the insulating film, wherein the insulating film includes an amorphous film including carbon. | 08-16-2012 |
20130105862 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | 05-02-2013 |
20140038372 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. The protection film is formed to be higher, for instance, in hydrogen concentration than the protection film so that the protection film is higher in refractive index the protection film. The protection film is formed to cover a gate electrode and extend to the vicinity of the gate electrode on an electron supplying layer. The protection film is formed on the entire surface to cover the protection film. According to this configuration, the gate leakage is significantly reduced by a relatively simple configuration to realize a highly-reliable compound semiconductor device achieving high voltage operation, high withstand voltage, and high output. | 02-06-2014 |
20140080277 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A compound semiconductor device including an electron transport layer that is formed on a substrate and includes a III-V nitride compound semiconductor, a gate insulating film that is positioned above the compound semiconductor layer, and a gate electrode that is positioned on the gate insulating film. The gate insulating film includes a first insulating film that includes oxygen, at least a single metal element selected from a metal bonding with the oxygen and forming a metal oxide having a dielectric constant no less than 10, and at least a single metal element selected from Si and Al. | 03-20-2014 |
20150044825 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. The protection film is formed to be higher, for instance, in hydrogen concentration than the protection film so that the protection film is higher in refractive index the protection film. The protection film is formed to cover a gate electrode and extend to the vicinity of the gate electrode on an electron supplying layer. The protection film is formed on the entire surface to cover the protection film. According to this configuration, the gate leakage is significantly reduced by a relatively simple configuration to realize a highly-reliable compound semiconductor device achieving high voltage operation, high withstand voltage, and high output. | 02-12-2015 |
20150194514 | COMPOUND SEMICONDUCTOR DEVICE HAVING A GATE ELECTRODE AND METHOD OF MANUFACTURING THE SAME - On a surface of a compound semiconductor layer including inner wall surfaces of an electrode trench, an etching residue | 07-09-2015 |
Patent application number | Description | Published |
20120218338 | THREE-DIMENSIONAL PRINTING DEVICE, THREE-DIMENSIONAL PRINTING SYSTEM AND THREE-DIMENSIONAL PRINTING METHOD - Desired designated sections are selectively extracted from a color image to be printed, the extracted designated sections are converted into a solid black image having a high thermal energy absorbency, and the solid black image is printed on the foaming layer surface of a supplied thermal expansion sheet. Next, thermal energy is applied by a halogen lamp in a thermal expansion processing unit, causing the solid black image section to expand and rise. Furthermore, in an ink jet printer unit, a prescribed color that is a background color is printed on the entire foaming layer surface of the thermal expansion sheet including the raised sections. Furthermore, the color image to be printed is printed thereon by an ink jet recording method to obtain color image three-dimensional printed material. | 08-30-2012 |
20130078009 | APPARATUS AND METHOD FOR FORMING THERMAL TRANSFER PRINTING SHEET, THERMAL TRANSFER PRINTING SHEET AND THERMAL TRANSFER PRINTING METHOD - There is provided an apparatus for forming a thermal transfer printing sheet. The apparatus includes: a release sheet feeder that feeds a release sheet having a release surface; a first image forming section that transfers an image, which is to be thermally transferred and printed on a transfer medium, onto the release surface of the release sheet; a second image forming section that forms a thermoplastic resin pattern corresponding to the image as a transfer base material and transfers the thermoplastic resin pattern onto the release surface of the release sheet; and a fixing section that fixes the image and the thermoplastic resin pattern onto the release surface of the release sheet in a film shape, through heat and pressure. | 03-28-2013 |
20130078431 | COMPOSITION FOR LABEL BASE, METHOD FOR PRODUCING LABEL BASE, AND LABEL - The present invention relates to: a composition for label base containing a polyester resin having a repeating unit formed by condensation of an aliphatic dicarboxylic acid and an aliphatic diol; a method for producing a label base containing developing the composition for label base to form a solid image having a label shape, transferring the solid image onto a pressure-sensitive adhesive layer side of a release paper, and fixing the transferred solid image on the pressure-sensitive adhesive layer by heat and pressure application into a film shape; and a label containing the label base and a label image provided thereon obtained by transferring a toner image to the label base and fixing the transferred toner image to the label base by heat and pressure application | 03-28-2013 |
20140059569 | DATA PROCESSING APPARATUS INCLUDING PLURALITY OF APPLICATIONS AND METHOD - An object of the present invention is to provide a data processing apparatus in which, merely by an arbitrary indicator being specified by a user from the array of indicators representing plural types of instructive information which is acceptable during the execution of an application, an operation allotted to the indicator is executed. In the present invention, a CPU recognizes a mark on a paper sheet specified by a user through the analysis of an image of the paper sheet photographed by a document camera, and after reading out a command corresponding to the mark with reference to a mark table based on the mark, instructs the currently executed application to perform an operation corresponding to the command. | 02-27-2014 |
20140079318 | IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD AND COMPUTER READABLE STORAGE MEDIUM - An image processing device includes an extraction unit, a judgment unit, a restoration unit and a specification unit. The extraction unit specifies a first same-color area having a color similar to a color of a pointer in a pre-pointed image of a subject not overlapped by the pointer to extract a pointer portion from a being-pointed image of the subject overlapped by the pointer on the basis of the first same-color area. The restoration unit restores a dividing portion of the pointer portion using a surrounding image of the dividing portion when the judgment unit judges that the pointer portion is divided. The specification unit specifies a pointed position pointed with the pointer on the subject on the basis of a shape of the restored pointer portion. | 03-20-2014 |