Rainer Minixhofer
Rainer Minixhofer, Unterpremstaetten AT
Patent application number | Description | Published |
---|---|---|
20100252900 | Vertical Hall Sensor and Method of Producing a Vertical Hall Sensor - Through a main surface ( | 10-07-2010 |
20100308404 | Field-Effect Transistor and Method for Producing a Field-Effect Transistor - A semiconductor body ( | 12-09-2010 |
20110117714 | Integration of Multiple Gate Oxides with Shallow Trench Isolation Methods to Minimize Divot Formation - A method of forming an isolation region is provided that in one embodiment substantially reduces divot formation. In one embodiment, the method includes providing a semiconductor substrate, forming a first pad dielectric layer on an upper surface of the semiconductor substrate and forming a trench through the first pad dielectric layer into the semiconductor substrate. In a following process sequence, the first pad dielectric layer is laterally etched to expose an upper surface of the semiconductor substrate that is adjacent the trench, and the trench is filled with a trench dielectric material, wherein the trench dielectric material extends atop the upper surface of the semiconductor substrate adjacent the trench and abuts the pad dielectric layer. | 05-19-2011 |
20120104605 | Chip Design having Integrated Fuse and Method for the Production Thereof - A chip design ( | 05-03-2012 |
20140203340 | PHOTODIODE AND PRODUCTION METHOD - The photodiode has a p-type doped region ( | 07-24-2014 |
Rainer Minixhofer, Unterpremstatten AT
Patent application number | Description | Published |
---|---|---|
20090098718 | Multiple mask and method for producing differently doped regions - In order to produce doping regions (DG) in a substrate (S) having different dopings with the aid of a single mask (DM) different mask regions are provided which have elongated mask openings (MO) having different orientations relative to the spatial direction of an oblique implantation. The substrate is rotated between the first and second oblique implantations, wherein during the first oblique implantation maximum and minimum shadings in the different mask regions are opposite one another and the conditions are precisely reversed during the second oblique implantation after the rotation of the substrate. | 04-16-2009 |
20100276811 | Semiconductor Component with Terminal Contact Surface - At least one terminal contact surface ( | 11-04-2010 |
20140191413 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE COMPRISING A CONDUCTOR LAYER IN THE SEMICONDUCTOR BODY AND SEMICONDUCTOR BODY | 07-10-2014 |