Kiyoteru
Kiyoteru Kobayashi, Tokyo JP
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20090017614 | SEMICONDUCTOR DEVICE - In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film. | 01-15-2009 |
20110092037 | SEMICONDUCTOR DEVICE - In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film. | 04-21-2011 |
Kiyoteru Kobayashi, Kanagawa JP
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20130113034 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE, PRODUCTION METHOD FOR SAME, AND CHARGE STORAGE FILM - A non-volatile semiconductor memory device comprises a tunnel insulating film on a semiconductor substrate, a charge storage film on the tunnel insulating film, a blocking insulating film on the charge storage film, a control gate electrode arranged on the blocking insulating film, and source/drain regions formed on the semiconductor substrate on the both sides of the control gate electrode, that the charge storage film is a silicon nitride film produced according to the catalytic chemical vapor deposition technique and that the ratio between the constituent elements: N/Si falls within the range of from 1.2 to 1.4. | 05-09-2013 |
Kiyoteru Kosa, Kanagawa-Ken JP
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20130063034 | LIGHTING SYSTEM AND CONTROL METHOD THEREOF - A lighting system according to embodiments includes a first light source, a second light source, a first lighting circuit, a second lighting circuit, a first optical sensor; and a control circuit. The first light source is configured to emit light a half-value width of which is 100 nm or more. The second light source is configured to emit light the half-value width of which is less than 100 nm. The first lighting circuit is configured to light the first light source. The second lighting circuit is configured to light the second light source. The control circuit is configured to perform a lighting control of the first lighting circuit on the basis of a detection value of the first sensor, and perform a lighting control of the second lighting circuit on the basis of a value which is predetermined when operating the first sensor. | 03-14-2013 |
20130082623 | LIGHTING SYSTEM AND CONTROL METHOD THEREOF - A lighting system according to an embodiment includes a light source unit and a control circuit. The light source unit includes first, second, and third light sources. The control circuit controls an optical output of the light source unit with a predetermined color temperature by controlling the respective optical outputs of the first, second, and third light sources, and sets the optical output of the light source unit when any one of the first, second, and third light sources becomes the minimum optical output to the minimum optical output at the time of reducing the optical output of the light source unit in a state where the optical output of the light source unit maintains the predetermined color temperature. | 04-04-2013 |
Kiyoteru Miyake, Kanagawa-Ken JP
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20090294705 | Radiation detector - A radiation detector is constituted by: a recording photoconductive layer; and electrodes provided on both sides of the photoconductive layer. Electric charges, which are generated within the recording photoconductive layer when radiation is irradiated thereon while a predetermined biasing voltage is being applied between the electrodes, are read out as electric signals. The recording photoconductive layer is formed by amorphous selenium that contains alkali metal elements within a range from 0.0007 atomic ppm to 0.0035 atomic ppm. | 12-03-2009 |
Kiyoteru Mori, Tokyo JP
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20150210207 | Vehicle Fog Lamp - A vehicle fog lamp includes a light source and reflective surface sections surrounding the light source. A screen light distribution pattern formed by illuminating light that is emitted from the light source and is reflected on the reflective surface section is divided into an outer pattern part and an inner pattern part. An upper end part of the outer pattern part is disposed above an upper end part of the inner pattern part. | 07-30-2015 |
Kiyoteru Yamamoto, Tokyo JP
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20100304176 | PRODUCTION METHOD AND DEVICE OF SURFACE ROUGHENED COPPER PLATE, AND SURFACE ROUGHENED COPPER PLATE - Problems to be Solved: To provide a process for roughening both sides of a copper plate by forming a protrusion with a fine bump shape on the both sides of the copper plate, and then to provide a process for a deterioration of an electroplating solution for plating copper to become hard to progress therein. | 12-02-2010 |
20140339094 | PRODUCTION METHOD AND DEVICE OF SURFACE ROUGHENED COPPER PLATE, AND SURFACE ROUGHENED COPPER PLATE - PROBLEMS TO BE SOLVED: To provide a process for roughening both sides of a copper plate by forming a protrusion with a fine bump shape on the both sides of the copper plate, and then to provide a process for a deterioration of an electroplating solution for plating copper to become hard to progress therein. | 11-20-2014 |