Patent application number | Description | Published |
20080252308 | Power Grid Structure to Optimize Performance of a Multiple Core Processor - A reduced number of voltage regulator modules provides a reduced number of supply voltages to the package. The package includes a voltage plane for each of the voltage regulator modules. Each core or other component on the die is tied to a switch on the package, and each switch is electrically connected to all of the voltage planes. A wafer-level test determines a voltage that optimizes performance of each core or other component. Given these voltage values, an engineer may determine voltage settings for the voltage regulator modules and which cores are to be connected to which voltage regulator modules. A database stores voltage setting data, such as the optimal voltage for each component, switch values, or voltage settings for each voltage regulator module. An engineering wire may permanently set each switch to customize the voltage supply to each core or other component. | 10-16-2008 |
20090138220 | Power-aware line intervention for a multiprocessor directory-based coherency protocol - A directory-based coherency method, system and program are provided for intervening a requested cache line from a plurality of candidate memory sources in a multiprocessor system on the basis of the sensed temperature or power dissipation value at each memory source. By providing temperature or power dissipation sensors in each of the candidate memory sources (e.g., at cores, cache memories, memory controller, etc.) that share a requested cache line, control logic may be used to determine which memory source should source the cache line by using the power sensor signals to signal only the memory source with acceptable power dissipation to provide the cache line to the requester. | 05-28-2009 |
20090138660 | Power-aware line intervention for a multiprocessor snoop coherency protocol - A snoop coherency method, system and program are provided for intervening a requested cache line from a plurality of candidate memory sources in a multiprocessor system on the basis of the sensed temperature or power dissipation value at each memory source. By providing temperature or power dissipation sensors in each of the candidate memory sources (e.g., at cores, cache memories, memory controller, etc.) that share a requested cache line, control logic may be used to determine which memory source should source the cache line by using the power sensor signals to signal only the memory source with acceptable power dissipation to provide the cache line to the requester. | 05-28-2009 |
20090164812 | Dynamic processor reconfiguration for low power without reducing performance based on workload execution characteristics - A method, system and program are provided for dynamically reconfiguring a pipelined processor to operate with reduced power consumption without reducing existing performance. By monitoring or detecting the performance of individual units or stages in the processor as they execute a given workload, each stage may use high-performance circuitry until such time as a drop in the throughput performance is detected, at which point the stages are reconfigured to use lower-performance circuitry so as to meet the reduced performance throughput requirements using less power. By configuring the processor to back off from high-performance designs to low-performance designs to meet the detected performance characteristics of the executing workload warrant, power dissipation may be optimized. | 06-25-2009 |
20090177445 | Design Structure For An Apparatus For Monitoring And Controlling Heat Generation In A Multi-Core Processor - A design structure for a processor may be embodied in a machine readable medium for designing, manufacturing or testing a processor integrated circuit. The design structure may control heat generation in a multi-core processor. The design structure may specify that each processor core includes a temperature sensor that reports temperature information to a processor controller. The design structure may also specify that if a particular processor core exceeds a predetermined temperature, the processor controller disables that processor core to allow that processor core to cool. The design structure may also specify that the processor controller enables the previously disabled processor core when the previously disabled processor core cools sufficiently to a normal operating temperature. In this manner, a multi-core processor may avoid undesirable hot spots that impact processor life. | 07-09-2009 |
20100153700 | Multicore Processor And Method Of Use That Configures Core Functions Based On Executing Instructions - A processor having multiple cores coordinates functions performed on the cores to automatically, dynamically and repeatedly reconfigure the cores for optimal performance based on characteristics of currently executing software. A core running a thread detects a multi-core characteristic of the thread and assigns one or more other cores to the thread to dynamically combine the cores into what functionally amounts to a common core for more efficient execution of the thread. | 06-17-2010 |
20100153956 | Multicore Processor And Method Of Use That Configures Core Functions Based On Executing Instructions - A multiprocessor system having plural heterogeneous processing units schedules instruction sets for execution on a selected of the processing units by matching workload processing characteristics of processing units and the instruction sets. To establish an instruction set's processing characteristics, the homogeneous instruction set is executed on each of the plural processing units with one or more performance metrics tracked at each of the processing units to determine which processing unit most efficiently executes the instruction set. Instruction set workload processing characteristics are stored for reference in scheduling subsequent execution of the instruction set. | 06-17-2010 |
20110108948 | INTEGRATED DECOUPLING CAPACITOR EMPLOYING CONDUCTIVE THROUGH-SUBSTRATE VIAS - A capacitor in a semiconductor substrate employs a conductive through-substrate via (TSV) as an inner electrode and a columnar doped semiconductor region as an outer electrode. The capacitor provides a large decoupling capacitance in a small area, and does not impact circuit density or a Si3D structural design. Additional conductive TSV's can be provided in the semiconductor substrate to provide electrical connection for power supplies and signal transmission therethrough. The capacitor has a lower inductance than a conventional array of capacitors having comparable capacitance, thereby enabling reduction of high frequency noise in the power supply system of stacked semiconductor chips. | 05-12-2011 |
20110291279 | SEMICONDUCTOR ARTICLE HAVING A THROUGH SILICON VIA AND GUARD RING - Disclosed is a semiconductor article which includes a semiconductor base portion, a back end of the line (BEOL) wiring portion on the semiconductor base portion, a through silicon via and a guard ring. The semiconductor base portion is made of a semiconductor material. The BEOL wiring portion includes a plurality of wiring layers having metallic wiring and insulating material. The BEOL wiring portion does not include a semiconductor material. The through silicon via provides a conductive path through the BEOL wiring portion and the semiconductor base portion. The guard ring surrounds the through silicon via in the BEOL wiring portion. | 12-01-2011 |
20120002812 | DATA AND CONTROL ENCRYPTION - Secure communication of data between devices includes encrypting unencrypted data at a first device by reordering unencrypted bits provided in parallel on a device bus, including data and control bits, from an unencrypted order to form encrypted data including a plurality of encrypted bits in parallel in an encrypted order defined by a key. The encrypted data may be transmitted to another device where the encrypted data is decrypted by using the key to order the encrypted bits to restore the unencrypted order thereby to reform the unencrypted data. | 01-05-2012 |
20120020042 | NOISE SUPPRESSOR FOR SEMICONDUCTOR PACKAGES - One or more decoupling capacitors are coupled to a low inductance mount that is connected to the bottom layer of a printed circuit board (PCB) on which a semiconductor module is mounted. The low inductance mount includes a magnetic planar structure with vias that are coupled to the one or more decoupling capacitors and to like vias positioned on the PCB. | 01-26-2012 |
20120256313 | SOLDER BALL CONTACT SUSCEPTIBLE TO LOWER STRESS - A solder ball contact and a method of making a solder ball contact includes: a first insulating layer with a via formed on an integrated circuit (IC) chip and a metal pad; an under bump metallurgy (UBM) structure disposed within the via and on a portion of the first insulating layer, surrounding the via; a second insulating layer formed on an upper surface of an outer portion of the UBM structure that is centered on the via; and a solder ball that fills the via and is disposed above an upper surface of an inner portion of the UBM structure that contacts the via, in which the UBM structure that underlies the solder ball is of a greater diameter than the solder ball. | 10-11-2012 |
20120292779 | SEMICONDUCTOR STRUCTURE HAVING OFFSET PASSIVATION TO REDUCE ELECTROMIGRATION - A semiconductor structure which includes a plurality of stacked semiconductor chips in a three dimensional configuration. There is a first semiconductor chip in contact with a second semiconductor chip. The first semiconductor chip includes a through silicon via (TSV) extending through the first semiconductor chip; an electrically conducting pad at a surface of the first semiconductor chip, the TSV terminating in contact at a first side of the electrically conducting pad; a passivation layer covering the electrically conducting pad, the passivation layer having a plurality of openings; and a plurality of electrically conducting structures formed in the plurality of openings and in contact with a second side of the electrically conducting pad, the contact of the plurality of electrically conducting structures with the electrically conducting pad being offset with respect to the contact of the TSV with the electrically conducting pad. | 11-22-2012 |
20130015579 | SOLDER BALL CONTACT SUSCEPTIBLE TO LOWER STRESS - A solder ball contact and a method of making a solder ball contact includes: a first insulating layer with a via formed on an integrated circuit (IC) chip and a metal pad; an under bump metallurgy (UBM) structure disposed within the via and on a portion of the first insulating layer, surrounding the via; a second insulating layer formed on an upper surface of an outer portion of the UBM structure that is centered on the via; and a solder ball that fills the via and is disposed above an upper surface of an inner portion of the UBM structure that contacts the via, in which the UBM structure that underlies the solder ball is of a greater diameter than the solder ball. | 01-17-2013 |
20130113448 | COIL INDUCTOR FOR ON-CHIP OR ON-CHIP STACK - A coil inductor and buck voltage regulator incorporating the coil inductor are provided which can be fabricated on a microelectronic element such as a semiconductor chip, or on an interconnection element such as a semiconductor, glass or ceramic interposer element. When energized, the coil inductor has magnetic flux extending in a direction parallel to first and second opposed surfaces of the microelectronic or interconnection element, and whose peak magnetic flux is disposed between the first and second surfaces. In one example, the coil inductor can be formed by first conductive lines extending along the first surface of the microelectronic or interconnection element, second conductive lines extending along the second surface of the microelectronic or interconnection element, and a plurality of conductive vias, e.g., through silicon vias, extending in direction of a thickness of the microelectronic or interconnection element. A method of making the coil inductor is also provided. | 05-09-2013 |
20130307656 | Stacked Through-Silicon Via (TSV) Transformer Structure - A distributed active transformer is provided comprising a primary and a secondary winding. The primary winding comprises a first set of conductive vias extending in a direction between a first surface and a second surface of an element, a first set of first electrically conductive lines extending along the first surface, and a first set of second electrically conductive lines extending along the second surface. The secondary winding comprises a second set of conductive vias extending in a direction between the first surface and the second surface, a second set of first electrically conductive lines extending along the first surface, and a second set of second electrically conductive lines extending along the second surface. When energized, the primary winding generates magnetic flux extending in a direction parallel to the first surface and the second surface. The secondary winding receives energy transferred by the magnetic flux generated by the primary winding. | 11-21-2013 |
20130344675 | INTEGRATED DECOUPLING CAPACITOR EMPLOYING CONDUCTIVE THROUGH-SUBSTRATE VIAS - A capacitor in a semiconductor substrate employs a conductive through-substrate via (TSV) as an inner electrode and a columnar doped semiconductor region as an outer electrode. The capacitor provides a large decoupling capacitance in a small area, and does not impact circuit density or a Si3D structural design. Additional conductive TSV's can be provided in the semiconductor substrate to provide electrical connection for power supplies and signal transmission therethrough. The capacitor has a lower inductance than a conventional array of capacitors having comparable capacitance, thereby enabling reduction of high frequency noise in the power supply system of stacked semiconductor chips. | 12-26-2013 |