Patent application number | Description | Published |
20110096000 | TOUCH STRUCTURE AND TOUCH DISPLAY APPARATUS COMPRISING THE SAME - A touch structure and a touch display apparatus comprising the same are provided. The touch display apparatus has a touch controller electrically connected to the touch structure. The touch structure comprises a display panel with a display surface and a sense assembly. The sense assembly is disposed on a surface opposite to the display surface and electrically connected to the touch controller to generate a touch signal while the display surface of the display panel is touched so that the touch controller may act according to the touch signal. | 04-28-2011 |
20110128608 | ELECTRO-PHORETIC DISPLAY DEVICE AND FABRICATING METHOD THEREOF - An electro-phoretic display device includes a first substrate, an active elements array, a driving circuit, a conductive flexible board, an electro-phoretic layer, a second substrate and a sealant layer. The first substrate has a first surface defining a display area and a circuit area, and a second surface. The active elements array is disposed within the display area and the driving circuit is disposed within the circuit area and electrically connected to the active elements array. The conductive flexible board is partially disposed at the first substrate and electrically connected to the driving circuit. The electro-phoretic layer and the second substrate are sequentially disposed on the active elements array and the driving circuit. The sealant layer is interposed between the second substrate and the conductive flexible board to seal the electro-phoretic layer between the first substrate and the second substrate. A fabricating method of electro-phoretic display device is also disclosed. | 06-02-2011 |
20110148277 | ELECTROPHORISES DISPLAY UNIT AND ITS PRODUCTION METHOD - An electrophorises display unit includes a substrate, a first electrode, a first insulation layer, a second electrode and a second insulation layer. The first electrode is disposed on the substrate. The first insulation layer is disposed on the first electrode. The second electrode is disposed on the first insulation layer. The second insulation layer is disposed on the second electrode. Wherein, the second insulation layer has an opening for appearing a part of the second electrode. | 06-23-2011 |
20110248940 | TOUCH DISPLAY STRUCTURE AND TOUCH DISPLAY APPARATUS COMPRISING THE SAME - A touch display apparatus comprises a touch display structure and a touch controller electrically connected thereto. The touch display structure comprises a display layer, an electric circuit layer, and a second electrode. The electric circuit layer, disposed under the display layer, comprises a substrate, a driving electrode, and a first electrode. The driving electrode and the first electrode are disposed on an upper surface and a lower surface of the substrate, respectively, and are electrically connected to the touch controller, respectively. The second electrode is disposed under the first electrode and electrically connects to the touch controller. The first electrode and the second electrode generate a touch control signal in response to a press of a user or an electromagnetic signal. The touch controller receives and processes the touch control signal, and then, the touch controller transmits the touch control signal to the driving electrode to drive the display layer. | 10-13-2011 |
20110290414 | METHOD FOR MANUFACTURING COLOR ELECTROPHORETIC DISPLAY DEVICE - A method for manufacturing a color electrophoretic display device includes the following steps. First, a substrate having a displaying region and a circuit region around the displaying region is provided. Next, a driving array is formed in the displaying region. Subsequently, an electrophoretic display layer is formed on the driving array. Afterwards, a thermal transfer process is performed so that a color filter layer is formed on the electrophoretic display layer. The method can increase the production eligibility rate of the color electrophoretic display device, thereby improving the display quality of the color electrophoretic display device. | 12-01-2011 |
20110291921 | ELECTRONIC PAPER DISPLAY DEVICE - An electronic paper display device includes a first substrate, a plurality of display units and a plurality of light-emitting units. The first substrate includes first base and a plurality of electrodes disposed on the first base. The display units are disposed above the first substrate. The light-emitting units are respectively disposed between the display units and the first base. | 12-01-2011 |
20120062467 | ELECTRONIC SYSTEM, METHOD FOR CONTROLLING MOBILE APPARATUS, READING APPARATUS AND METHOD FOR CONTORLLING THEREOF - An electronic system includes a mobile apparatus and a reading apparatus. The mobile apparatus includes a first screen for showing a display image. Similarly, the reading apparatus includes a second screen, which is a touch control screen. When the reading apparatus links with the mobile apparatus through a data transmission interface, the mobile apparatus transmits the display image to the reading apparatus, so that the display image is displayed on the second screen of the reading apparatus. In addition, when an operation motion is performed on the second screen, a corresponding sensing signal generated by the reading apparatus is transmitted to the mobile apparatus, and the mobile apparatus determines whether or not responding to the operation motion according to the sensing signal. | 03-15-2012 |
Patent application number | Description | Published |
20120132921 | REDUCING WAFER DISTORTION THROUGH A HIGH CTE LAYER - Provided is a method of fabricating a semiconductor device. The method includes providing a silicon substrate having opposite first and second sides. At least one of the first and second sides includes a silicon ( | 05-31-2012 |
20120138945 | REDUCING WAFER DISTORTION THROUGH A LOW CTE LAYER - Provided is a method of fabricating a semiconductor device. The method includes forming a first layer on a first side of a first silicon wafer. The first silicon wafer has a second side opposite the first side. The first layer has a coefficient-of-thermal-expansion (CTE) that is lower than that of silicon. The method includes bonding the first wafer to a second silicon wafer in a manner so that the first layer is disposed in between the first and second silicon wafers. The method includes removing a portion of the first silicon wafer from the second side. The method includes forming a second layer over the second side of the first silicon wafer. The second layer has a CTE higher than that of silicon. | 06-07-2012 |
20120149176 | METHOD AND APPARATUS FOR FORMING A III-V FAMILY LAYER - Provided is an apparatus. The apparatus includes: a first deposition component that is operable to form a compound over a semiconductor wafer, the compound including at least one of: a III-family element and a V-family element; a second deposition component that is operable to form a passivation layer over the compound; and a transfer component that is operable to move the semiconductor wafer between the first and second deposition components, the transfer component enclosing a space that contains substantially no oxygen and substantially no silicon; wherein the loading component, the first and second deposition components, and the transfer component are all integrated into a single fabrication tool. | 06-14-2012 |
20120168911 | SILICON WAFER STRENGTH ENHANCEMENT - Provided is a method of fabricating a semiconductor device. The method includes: receiving a silicon wafer that contains oxygen; forming a zone in the silicon wafer, the zone being substantially depleted of oxygen; causing a nucleation process to take place in the silicon wafer to form oxygen nuclei in a region of the silicon wafer outside the zone; and growing the oxygen nuclei into defects. Also provided is an apparatus that includes a silicon wafer. The silicon wafer includes: a first portion that is substantially free of oxygen, the first portion being disposed near a surface of the silicon wafer; and a second portion that contains oxygen; wherein the second portion is at least partially surrounded by the first portion. | 07-05-2012 |
20120238076 | Method and Apparatus for Forming a III-V Family Layer - Provided is an apparatus. The apparatus includes: a first deposition component that is operable to form a compound over a semiconductor wafer, the compound including at least one of: a III-family element and a V-family element; a second deposition component that is operable to form a passivation layer over the compound; and a transfer component that is operable to move the semiconductor wafer between the first and second deposition components, the transfer component enclosing a space that contains substantially no oxygen and substantially no silicon; wherein the loading component, the first and second deposition components, and the transfer component are all integrated into a single fabrication tool. | 09-20-2012 |
20130099243 | SUBSTRATE BREAKDOWN VOLTAGE IMPROVEMENT FOR GROUP III-NITRIDE ON A SILICON SUBSTRATE - A circuit structure includes a substrate, a nucleation layer of undoped aluminum nitride, a graded buffer layer comprising aluminum, gallium, nitrogen, one of silicon and oxygen, and a p-type conductivity dopant, a ungraded buffer layer comprising gallium, nitrogen, one of silicon and oxygen, and a p-type conductivity dopant without aluminum, and a bulk layer of undoped gallium nitride over the ungraded buffer layer. The various dopants in the graded buffer layer and the ungraded buffer layer increases resistivity and results in layers having an intrinsically balanced conductivity. | 04-25-2013 |
20130099282 | FinFET Device And Method Of Manufacturing Same - A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a first dielectric layer disposed over the substrate. The semiconductor device further includes a buffer layer disposed over the substrate and between first and second walls of a trench of the dielectric layer. The semiconductor device further includes an insulator layer disposed over the buffer layer and between the first and second wall of the trench of the dielectric layer. The semiconductor device also includes a second dielectric layer disposed over the first dielectric layer and the insulator layer. Further, the semiconductor device includes a fin structure disposed over the insulator layer and between first and second walls of a trench of the second dielectric layer. | 04-25-2013 |
20130112939 | NEW III-NITRIDE GROWTH METHOD ON SILICON SUBSTRATE - A circuit structure includes a substrate and a patterned dielectric layer over the substrate. The patterned dielectric layer includes a plurality of vias; and a number of group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layers include a first layer in the vias, a second layer over the first layer and the dielectric layer, and a bulk layer over the second layer. | 05-09-2013 |
20130140525 | GALLIUM NITRIDE GROWTH METHOD ON SILICON SUBSTRATE - A semiconductor structure includes a silicon substrate; more than one bulk layer of group-III/group-V (III-V) compound semiconductor atop the silicon substrate; and each bulk layer of the group III-V compound is separated by an interlayer. | 06-06-2013 |
20140253901 | Two-Dimensional Marks - A method for controlling semiconductor production through use of a Focus Exposure Matrix (FEM) model includes taking measurements of characteristics of a two-dimensional mark formed onto a substrate, the two-dimensional mark including two different patterns along two different cut-lines, and comparing the measurements with a FEM model to determine focus and exposure conditions used to form the two-dimensional mark. The FEM model was created using measurements taken of corresponding two-dimensional marks formed onto a substrate under varying focus and exposure conditions. | 09-11-2014 |
Patent application number | Description | Published |
20110065233 | Method for fabricating and repairing organic thin film - The present invention relates to a method for fabricating an organic thin film transistor, including: (A) providing a gate electrode; (B) forming a gate insulating layer on the gate electrode; and (C) forming an organic active layer, a source electrode and a drain electrode over the gate insulating layer, and increasing crystallinity of the organic active layer by irradiating the organic active layer. Accordingly, through irradiation, the present invention can efficiently enhance the field effect mobility, and thereby significantly improves the device performance of an organic thin film transistor. Additionally, irradiation mentioned in the present invention also can be used for repairing an organic thin film transistor. | 03-17-2011 |
20110086467 | Method of fabricating an organic thin film transistor and method of surface treatment for gate insulating layer - A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved. Also, a method of surface treatment for the gate insulating layer is disclosed. | 04-14-2011 |
20110227046 | OTFT and MIM Capacitor Using Silk Protein as Dielectric Material and Methods for Manufacturing the Same - An organic thin film transistor (OTFT) and a metal-insulator-metal (MIM) capacitor using silk protein as a dielectric material, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate electrode; an organic semiconductor layer; and a source electrode and a drain electrode, wherein the organic semiconductor layer, the source electrode and the drain electrode are disposed over the gate insulating layer. | 09-22-2011 |
20110253984 | ELECTRONIC GRADE SILK SOLUTION, OTFT AND MIM CAPACITOR WITH SILK PROTEIN AS INSULATING MATERIAL AND METHODS FOR MANUFACTURING THE SAME - An electronic grade silk solution, an organic thin film transistor (OTFT) and a metal-insulator-metal capacitor with silk protein as the insulating material manufactured by use of the silk solution, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer. | 10-20-2011 |
20110291078 | OTFT USING PAPER AS SUBSTRATE AND SILK PROTEIN AS INSULATING MATERIAL AND METHOD FOR MANUFACTURING THE SAME - An organic thin film transistor (OTFT) using paper as a substrate and silk protein as an insulating material and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a paper substrate; a gate disposed on the paper substrate; a gate insulating layer containing silk protein, which is disposed on the paper substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer. | 12-01-2011 |
20110297962 | SCHOTTKY DIODE WITH DIAMOND ROD AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same. | 12-08-2011 |
20120175602 | N-TYPE ORGANIC THIN FILM TRANSISTOR, AMBIPOLAR FIELD-EFFECT TRANSISTOR, AND METHOD OF FABRICATING THE SAME - An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer. | 07-12-2012 |
20130181191 | ELECTRONIC DEVICES INCLUDING BIO-POLYMERIC MATERIAL AND METHOD FOR MANUFACTURING THE SAME - An electronic device including a bio-polymer material and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate; a first electrode disposed on the substrate; a bio-polymer layer disposed on the first electrode, wherein the bio-polymeric material is selected from a group consisting of wool keratin, collagen hydrolysate, gelatin, whey protein and hydroxypropyl methylcellulose; and a second electrode disposed on the biopolymer material layer. The present invention is suitable for various electronic devices such as an organic thin film transistor, an organic floating gate memory, or a metal-insulator-metal capacitor. | 07-18-2013 |
20130181192 | ORGANIC FLOATING GATE MEMORY DEVICE HAVING PROTEIN AND METHOD OF FABRICATING THE SAME - An organic floating gate memory device having protein and a method of fabricating the same are disclosed. The organic floating gate memory device of the present invention comprises: a substrate; a gate electrode on the substrate; a gate dielectric layer covering the gate electrode; a floating gate on the gate dielectric layer; a protein dielectric layer covering the floating gate; and an organic semiconductor layer, a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the protein dielectric layer | 07-18-2013 |
Patent application number | Description | Published |
20110018834 | Touch System and Recognition Method - A touch system including a touch panel and a readout circuit is disclosed. The touch panel is integrated with a plurality of photosensitive elements within pixel elements, and capable of displaying at least touch position by at least an optical inputting. The touch panel provides a signal data when the touch panel is touched. The readout circuit is configured to receive the signal data and includes a transformation unit and a processing unit. The transformation unit generates a signal value based on the signal data and a transformation parameter. The processing unit executes a specific action when the signal value is less than a preset value. | 01-27-2011 |
20110153284 | Liquid Crystal Device with Embedded Element and Method for Designing Thereof - A design method for integrating an embedded device into a liquid crystal panel is disclosed, including providing an adjustable backlight spectrum range, and determining an area ratio of sub pixels occupied by an embedded element and a readout line in a touch panel according to the adjustable backlight spectrum range. | 06-23-2011 |
20120306821 | FORCE-SENSING MODULES FOR LIGHT SENSITIVE SCREENS - A light sensitive screen includes at least one sensing element each being configured to detect a force applied to a position of the light sensitive screen and generate an electrical signal when a force is detected, and a sensor module configured to receive and process the electrical signal from the at least one sensing element. The sensor module may amplify the electrical signal from one of the at least one sensing element and generate an amplified signal, compare the amplified signal with a threshold and generate a comparing result, and generate a digital signal based on the comparing result, the digital signal including information as to whether the position of the light sensitive screen is touched. | 12-06-2012 |
20120306822 | FORCE-SENSING MODULES FOR LIGHT SENSITIVE SCREENS - A light sensitive screen includes at least one sensing element each being configured to detect a force applied to a position of the light sensitive screen and generate an electrical signal when a force is detected, and a sensor module configured to receive and process the electrical signal from the at least one sensing element. The sensor module may amplify the electrical signal from one of the at least one sensing element and generate an amplified signal, compare the amplified signal with a threshold and generate a comparing result, and generate a digital signal based on the comparing result, the digital signal including information as to whether the position of the light sensitive screen is touched. | 12-06-2012 |
20120313899 | FORCE-SENSING MODULES FOR LIGHT SENSITIVE SCREENS - A light sensitive screen includes at least one sensing element each being configured to detect a force applied to a position of the light sensitive screen and generate an electrical signal when a force is detected, and a sensor module configured to receive and process the electrical signal from the at least one sensing element. The sensor module may amplify the electrical signal from one of the at least one sensing element and generate an amplified signal, compare the amplified signal with a threshold and generate a comparing result, and generate a digital signal based on the comparing result, the digital signal including information as to whether the position of the light sensitive screen is touched. | 12-13-2012 |
Patent application number | Description | Published |
20110018840 | TOUCH SCREEN SYSTEM - A touch screen system includes an in-cell type optical touch device for displaying images and receiving a light signal, an out-cell type touch device for sensing a finger or a non-optical stylus, a first functional unit connected with the in-cell type optical touch device, a second functional unit connected with the out-cell type touch panel and a third functional unit connected with the first functional unit and the second functional unit. The out-cell type touch device is disposed on the in-cell type optical touch device. The first functional unit converts an analog sensing signal received by the in-cell type optical touch device into a first electrical signal. An object-sensing signal generated from the out-cell type touch panel is processed by the second functional unit to generate a second electrical signal. The third functional unit analyzes the first electrical signal and the second electrical signal and generates valid output signals. | 01-27-2011 |
20110069038 | INTERACTIVE DISPLAY PANEL - An interactive display panel includes scan lines, first data lines, sub-pixels, photo-sensors and second data lines. The scan lines and the first data lines are intersected to define sub-pixel regions. Each of the sub-pixels is located in one of the sub-pixel regions and has a display region, and each of the sub-pixels is electrically connected with one of the scan lines and one of the first data lines respectively. The photo-sensors are located outside the display regions of the sub-pixels. The scan lines and the second data lines are intersected and electrically connected with the photo-sensors. | 03-24-2011 |
20110096026 | PIXEL ARRAY AND DISPLAY PANEL HAVING THE SAME - A pixel array having a plurality of pixel structures is provided. At least one of the pixel structures includes a scan line, a data line, an active device, a pixel electrode, a capacitor electrode line, a readout line and a sensing device. The scan line and the data line are disposed on a substrate. The active device is electrically connected to the scan line and the data line. The pixel electrode is electrically connected to the active device. The capacitor electrode line electrically couples with the pixel electrode. The readout line is disposed parallel to the data line. The sensing device is electrically connected to the scan line and the readout line, and the sensing device is connected to an adjacent capacitor electrode line. | 04-28-2011 |
20110169775 | STYLUS AND TOUCH INPUT SYSTEM - A touch input system including a stylus and a display device is provided. The stylus includes a battery module, a touch portion, a transducer module and a RF transmitting module. When a contact pressure is acted on the touch portion, the touch portion is electrically connected to the battery module by the contact pressure and emits a light signal. The display region receives and reacts to the light signal, and the contact pressure is transformed into an electrical signal by the transducer module. The RF transmitting module is electrically connected to the transducer module and transmitting the electrical signal. The display device includes a display region and a RF receiving module. | 07-14-2011 |
20120162126 | TOUCH-SENSING DISPLAY DEVICE - A touch-sensing display device including a touch-sensing panel and a touch-sensing light source therearound is provided. The touch-sensing panel has a display surface and includes a pixel array including pixel structures and a display medium disposed on the pixel array. One pixel structure includes a scan line, a data line intersected with the scan line, an active element electrically connected to the scan line and the data line, a pixel electrode electrically connected to the active element, a capacitor electrode line electrically coupled with the pixel electrode, a readout line parallel to the data line, and a sensing element electrically connected to the scan line and the readout line and having a sensing surface facing the display surface. The touch-sensing light source provides a touch-sensing light to form a uniformed light field at the display surface. And at least one filter layer is provided above the sensing element. | 06-28-2012 |
20120275133 | LASER POINTER - A laser pointer suitable for a touch display panel is provided. The laser pointer includes a main body, a laser diode and a wave plate. The main body has a containing space. The laser diode is disposed in the containing space and has a light emitting end. The wave plate is disposed on the light emitting end, wherein the laser diode is suitable for emitting a laser beam having linear polarization from the light emitting end, and the wave plate is suitable for transforming the laser beam having linear polarization into a laser beam having circular polarization, such that the laser beam is suitable for being an input signal for the touch display panel. | 11-01-2012 |
20130027350 | STYLUS AND TOUCH INPUT SYSTEM - A touch input system including a stylus and a display device is provided. The stylus includes a battery module, a touch portion, a transducer module and a RF transmitting module. When a contact pressure is acted on the touch portion, the touch portion is electrically connected to the battery module by the contact pressure and emits a light signal. The display region receives and reacts to the light signal, and the contact pressure is transformed into an electrical signal by the transducer module. The RF transmitting module is electrically connected to the transducer module and transmitting the electrical signal. The display device includes a display region and a RF receiving module. | 01-31-2013 |
20130027358 | STYLUS AND TOUCH INPUT SYSTEM - A touch input system including a stylus and a display device is provided. The stylus includes a battery module, a touch portion, a transducer module and a RF transmitting module. When a contact pressure is acted on the touch portion, the touch portion is electrically connected to the battery module by the contact pressure and emits a light signal. The display region receives and reacts to the light signal, and the contact pressure is transformed into an electrical signal by the transducer module. The RF transmitting module is electrically connected to the transducer module and transmitting the electrical signal. The display device includes a display region and a RF receiving module. | 01-31-2013 |
20130201085 | PIXEL STRUCTURE OF ORGANIC ELECTROLUMINESCENCE DEVICE - A pixel structure of an organic electroluminescence device includes a scan line, and a data line, a bias line and a readout line on a substrate, a first switch device, a capacitor, a driving device, an organic light emitting device, a second switch device and a photo sensor device. The first switch device is electrically connected to the scan line and the data line. The capacitor is electrically connected to the first switch device and the bias line. The driving device is electrically connected to the first switch device, the capacitor and the bias line. The organic light emitting device is electrically connected to the driving device. The second switch device is electrically connected to the scan line and the readout line. The photo sensor device is electrically connected to the second switch device and the bias line. | 08-08-2013 |
20150234534 | TOUCH SCREEN SYSTEM - A touch screen system includes an in-cell type optical touch device for displaying images and receiving a light signal, an out-cell type touch device for sensing a finger or a non-optical stylus, a first functional unit connected with the in-cell type optical touch device, a second functional unit connected with the out-cell type touch panel and a third functional unit connected with the first functional unit and the second functional unit. The out-cell type touch device is disposed on the in-cell type optical touch device. The first functional unit converts an analog sensing signal received by the in-cell type optical touch device into a first electrical signal. An object-sensing signal generated from the out-cell type touch panel is processed by the second functional unit to generate a second electrical signal. The third functional unit analyzes the first electrical signal and the second electrical signal and generates valid output signals. | 08-20-2015 |
Patent application number | Description | Published |
20080251384 | MANUFACTURING METHOD FOR STAMPER AND MANUFACTURING METHOD FOR LIGHT GUIDE PLATE USING THE STAMPER - A manufacturing method for a stamper is provided. UV light cure adhesive is sprayed on a substrate and cured to form a three-dimensional pattern. Thereafter, a stamper is formed on the substrate and the three-dimensional pattern, such that the stamper has a first pattern opposite to the three-dimensional pattern. Afterwards, the stamper is separated from the substrate and the three-dimensional pattern. The stamper is disposed in a cavity of an injection molding machine to form a light guide plate. The light guide plate has a second pattern identical with the three-dimensional pattern. | 10-16-2008 |
20090002989 | INTEGRALLY FORMED REFLECTOR STRUCTURE, BACKLIGHT MODULE USING THE SAME REFLECTOR STRUCTURE AND METHOD FOR ASSEMBLING THE SAME BACKLIGHT MODULE - The present invention discloses an integrally formed reflector structure, a backlight module using the same reflector structure and a method for assembling the same module. An accommodation spacer and a plurality of lamp-support members are formed on a reflector baseplate with a vacuum-forming method, and a plurality of extension portions extend from the edges of the accommodation space. Further, pluralities of support pins, reflecting members, lamp-fixing members, positioning members, bent portions, etc. are formed in the appropriate positions of the reflector baseplate or the extension portions with a vacuum-forming method. Besides, the extension portions are bent from the bent portions to form a plurality of grooves, which are used to secure optical films in cooperation with the positioning members. | 01-01-2009 |
Patent application number | Description | Published |
20080248515 | Optimizing culture medium for CD34<+> hematopoietic cell expansion - The present invention provides a method of determining the optimal composition of a serum-free, eukaryotic cell culture medium supplement, using 2-level factorial design and the deepest ascent method. The invention further provides a method of making a serum-free eukaryotic cell culture medium supplement and the generated thereof. The invention further provides a method of making a serum-free, eukaryotic cell culture medium and the medium generated thereof. The invention further provides a kit containing the medium of the invention. The invention also provides a method of expanding CD34<+> hematopoietic cells and a composition comprising CD34<+> hematopoietic cells in a serum-free, eukaryotic cell culture medium of the invention. | 10-09-2008 |
20090309072 | Bacterial cellulose film and carbon nanotubes-like thin film structures developed from bacterial cellulose - A carbon nanotubes-like material is disclosed. The carbon nanotubes-like material comprises bacterial cellulose carbonized under an oxygen-free atmosphere. Also disclosed is a cathode material containing bacterial cellulose and LiFePO | 12-17-2009 |
20110038969 | FERMENTED COMPOSITION OF MUNG BEAN HULLS, METHOD FOR FORMING THEREOF, AND ANTI-OXIDATION AND ANTI-INFLAMMATION COMPOSITION USING THE SAME - The invention provides a method for forming a fermented composition of mung bean hulls, including: mixing mung bean hulls and water to form a mixture; adding a fungus into the mixture, wherein the fungus includes | 02-17-2011 |
20110256627 | Cutting device for culturing the next generation of cells - The present invention is related to a device for subculturing embryonic stem cells, which mainly contains a cutting brush having a handle and a brush stem. The brush stem has a stem and a plurality of discrete upright wires disposed on the stem. The brush stem is mounted onto a front end of the handle, and an angle between the brush stem and the handle ranges from 70 to 90 degrees. The distance between two adjacent wires is smaller than the diameter of a block of the embryonic stem cells to be cut for next generation culturing, so that the cutting brush can evenly cut the block into a plurality of smaller blocks of embryonic stem cells. | 10-20-2011 |
Patent application number | Description | Published |
20090161400 | Leakage current cut-off device for ternary content addressable memory - A leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode. | 06-25-2009 |
20100172194 | Dual-threshold-voltage two-port sub-threshold SRAM cell apparatus - The invention relates to a dual-threshold-voltage two-port sub-threshold SRAM cell apparatus. The above-mentioned apparatus comprises a first inverter, a second inverter, an access transistor and a read buffer. The first inverter and the second inverter include a plurality of first operating elements and a plurality of second operating elements for storing data. The access transistor is coupled to the first inverter and the second inverter, wherein the first operating elements and the second operating elements are high threshold voltage operating elements and the access transistor is low threshold voltage operating transistor. The read buffer is used for performing a read operation. | 07-08-2010 |
20110193515 | SOLAR POWER MANAGEMENT SYSTEM - A solar power management system is provided for managing electric energy conversion by a photovoltaic cell module, supplying the converted electric energy to an external load, and storing the converted electric energy in a battery. The solar power management system comprises a multiphase maximum power tracking (MPT) module, a charging circuit, and a voltage conversion module. The multiphase MPT module regulates output current of the photovoltaic cell module to output maximum power within the high limit thereof and obtain improved solar energy conversion efficiency. The voltage conversion module converts the electric energy generated by the photovoltaic cell module into different voltage formats, such as 5.6V DC, 1.0V DC, 0.6˜0.3V DC low voltage, or −1.2V DC negative voltage, to meet different external load requirements. The solar power management system has simple circuitry and can be configured as a system on chip (SoC) at reduced cost while provides very wide applications. | 08-11-2011 |
20120169394 | METHOD FOR BUFFERING CLOCK SKEW BY USING A LOGICAL EFFORT - A method buffers clock skew by using a logical effort, and is applicable to a clock tree that stays in a strong-inversion region, a moderate-inversion region, or a weak-inversion region. The method includes establishing in the clock tree a temperature sensor and a tunable-width buffer, and establishing width and temperature comparative lists according to a logical effort equation, for the tunable-width buffer to be individually applied to the strong-inversion region, the moderate-inversion region, and the weak-inversion region; selecting one from the width and temperature comparative lists that corresponds to one of the inversion regions in which the clock tree stays, enabling the temperature sensor to sense a temperature, and searching the selected width and temperature comparative list for a width that corresponds to the temperature sensed by the temperature sensor; and enabling the tunable-width buffer to perform a width modulation process according to the searched width. | 07-05-2012 |
20120307548 | DUAL-PORT SUBTHRESHOLD SRAM CELL - An innovative dual-port subthreshold static random access memory (SRAM) cell for sub-threshold voltage operation is disclosed. During write mode, the dual-port subthreshold SRAM cell would cut off the positive feedback loop of the inverters and utilize the reverse short-channel effect to enhance write capability. The single-ended read/write port structure further reduces power consumption of the lengthy bit line. Therefore, the dual-port subthreshold SRAM cell is a suitable for long operation in a first-in first-out memory system. Although the lower voltage reduces the stability of the memory cell, the dual-port subthreshold SRAM cell of the present invention can still stably operate. | 12-06-2012 |
20140198562 | TEN-TRANSISTOR DUAL-PORT SRAM WITH SHARED BIT-LINE ARCHITECTURE - A 10-transistor dual-port SRAM with shared bit-line architecture includes a first memory cell and a second memory cell. The first memory cell has a first storage unit, a first switch set, and a second switch set. The second memory cell has a second storage unit, a third switch set, and a fourth switch set. The second switch set is coupled to a complement first A-port bit line and a complement first B-port bit line, and connected to the first storage unit. The third switch set is connected to a complement second A-port bit line, a complement second B-port bit line, and the second storage unit. Thus, the second memory cell can make use of the third switch set to share the complement first A-port bit line and the complement first B-port bit line with the first memory cell. | 07-17-2014 |