Patent application number | Description | Published |
20100327288 | TRENCH SCHOTTKY DIODE AND METHOD FOR MANUFACTURING THE SAME - A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure. | 12-30-2010 |
20110084353 | TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME - A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage. | 04-14-2011 |
20110306725 | VARNISH COMPOSITION WITH HIGH TEMPERATURE OF GLASS TRANSITION FOR GLASS FIBER LAMINATE - A varnish composition includes (1) a benzoxazine resin having highly symmetric molecular structure; (2) at least one of naphthol type novolac resins, aniline type novolac resins and phenolic type novolac resins; (3) fillers. The benzoxazine resin having highly symmetric molecular structure, and the at least one of naphthol type novolac resins, aniline type novolac resins and phenolic type novolac resins contribute to increase the temperature of glass transition of the varnish composition, while decrease the coefficient of thermal expansion and moisture absorbability due to their small and highly symmetric molecular structures. A copper substrate can meet the requirement of high temperature of glass transition (TMA≧200° C.) and low coefficient of thermal expansion (α1/α≦30/1350(μm/(m° C.). Therefore, the composition of the invention can be widely used as high-performance electronic material. | 12-15-2011 |
20140077328 | TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME - A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage. | 03-20-2014 |
Patent application number | Description | Published |
20080297735 | LAMP DRIVING METHOD - A lamp driving method for a projection apparatus is provided. The projection apparatus has a light valve and a lamp. The lamp driving method includes adjusting a brightness of the lamp to different values according to multiple states of the light valve. The lamp driving method improves the energy efficiency of the projection apparatus. | 12-04-2008 |
20080304015 | COLOR FILTERING DEVICE - A color filtering device including a color filter, a plurality of polarization beam splitting units, a plurality of reflecting units, and a plurality of wave plates is provided. The color filter has a plurality of filtering parts and a plurality of light shielding parts alternately arranged thereon. Each of the polarization beam splitting units is disposed in front of one of the filtering parts and makes an angle with a corresponding filtering part. Each of the reflecting units is disposed in front of one of the light shielding parts and makes an angle with a corresponding light shielding part. Each of the wave plates is substantially parallel to one of the filtering parts. Each of the polarization beam splitting units is disposed between a pair of a wave plate and a filtering part. The color filtering device has both color filtering function and polarization conversion function. | 12-11-2008 |
20080316430 | PROJECTION APPARATUS - A projection apparatus including an illumination system, a reflective light valve and an imaging system is provided. The illumination system emits an illumination beam. The reflective light valve is disposed on a transmission path of the illumination beam. The imaging system includes a first lens group, a polarization beam splitter and a second lens group. The first lens group is disposed on the transmission path of the illumination beam between the illumination system and the reflective light valve. The polarization beam splitter is disposed on the transmission path of the illumination beam between the illumination system and the first lens group. The polarization beam splitter permits the illumination beam to pass through and travel to the reflective light valve. The reflective light valve modulates the illumination beam to an image beam traveling to the polarization beam splitter. The polarization beam splitter reflects the image beam to the second lens group. | 12-25-2008 |
20080316569 | ILLUMINATION SYSTEM - An illumination system for providing an illumination beam to a light valve is provided. The illumination system includes a light source, a light integration rod, a color wheel, a first focusing unit and a second focusing unit. The light source is capable of generating the illumination beam, and the light integration rod is disposed on the transmission path of the illumination beam. The first focusing unit is disposed between the integration rod and the color wheel and is capable of focusing the illumination beam onto the color wheel. The second focusing unit is disposed between the color wheel and the light valve and is capable of focusing the illumination beam onto the light valve. | 12-25-2008 |
20090009720 | OPTICAL ENGINE - An optical engine including a beam splitting and combining system, which includes a first polarizing beam splitting (PBS) unit, a dichroic unit and a second PBS unit, is provided. A first color beam is reflected by the first PBS unit, is reflected by a first light valve, and passes through the first PBS unit sequentially. A second color beam passes through the first PBS unit, is reflected by a second light valve, and is reflected by the first PBS unit sequentially. The dichroic unit is disposed on an optical path of the first and second color beams. The second PBS unit is capable of allowing a third color beam to travel to a third light valve and allowing the third color beam reflected from the third light valve to travel to the dichroic unit. The dichroic unit is capable of combining the first, second and third color beams. | 01-08-2009 |
20090059396 | ILLUMINATION SYSTEM - An illumination system including at least one first light source, a prism and a light uniforming device is provided. The first light source is capable of providing a first beam. The prism is disposed on a transmission path of the first beam, and has four first facets. Two of the first facets are opposite to each other, and the other two first facets are opposite to each other. The first beam passes through one of the first facets and is totally internally reflected by another first facet opposite to the one of the first facets. The light uniforming device is disposed on the transmission path of the first beam from the another first facet. The cost of the illumination system is lower, and the illumination system has high flexibility of the light source design and can provide illumination with high brightness. | 03-05-2009 |
20100155756 | LIGHT EMITTING DIODE PACKAGE AND PROJECTION APPARATUS - A light emitting diode (LED) package including a carrier, at least one LED chip, and a light guide element is provided. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side. The side connects the light transmissive body and the light incident surface. The reflective film is disposed on the side. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed. | 06-24-2010 |
20120099085 | LIGHT EMITTING DIODE PACKAGE AND PROJECTION APPARATUS - A light emitting diode package including a carrier, at least one LED chip, and a light guide element. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and located above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side surface. The side surface connects the light transmissive body and the light incident surface. The reflective film is disposed on the side surface. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed. | 04-26-2012 |
Patent application number | Description | Published |
20120261751 | RECTIFIER WITH VERTICAL MOS STRUCTURE - A method for manufacturing a rectifier with a vertical MOS structure is provided. A first trench structure and a first mask layer are formed at a first side of the semiconductor substrate. A second trench structure is formed in the second side of the semiconductor substrate. A gate oxide layer, a polysilicon structure and a metal sputtering layer are sequentially formed on the second trench structure. The rectifier further includes a wet oxide layer and a plurality of doped regions. The wet oxide layer is formed on a surface of the first multi-trench structure and in the semiconductor substrate. The doping regions are formed on a region between the semiconductor substrate and the second trench structure, and located beside the mask layer. The metal sputtering layer is formed on the first mask layer corresponding to the first trench structure. | 10-18-2012 |
20130122695 | TRENCH SCHOTTKY DIODE AND METHOD FOR MANUFACTURING THE SAME - A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure. | 05-16-2013 |
20130168779 | MOS P-N JUNCTION DIODE WITH ENHANCED RESPONSE SPEED AND MANUFACTURING METHOD THEREOF - A MOS P-N junction diode includes a semiconductor substrate, a mask layer, a guard ring, a gate oxide layer, a polysilicon structure, a central conductive layer, a silicon nitride layer, a metal diffusion layer, a channel region, and a metal sputtering layer. For manufacturing the MOS P-N junction diode, a mask layer is formed on a semiconductor substrate. A gate oxide layer is formed on the semiconductor substrate, and a polysilicon structure is formed on the gate oxide layer. A guard ring, a central conductive layer and a channel region are formed in the semiconductor substrate. A silicon nitride layer is formed on the central conductive layer. A metal diffusion layer is formed within the guard ring and the central conductive layer. Afterwards, a metal sputtering layer is formed, and the mask layer is partially exposed. | 07-04-2013 |
20130228891 | MULTI-TRENCH TERMINATION STRUCTURE FOR SEMICONDUCTOR DEVICE AND MANUFACTURING MEHTOD THEREOF - A multi-trench termination structure for semiconductor device is disclosed, where the semiconductor device includes a semiconductor substrate and an active structure region. The multi-trench termination structure includes multiple trenches defined on an exposed face of the semiconductor substrate, a first mask layer formed on a partial exposed surface of the semiconductor substrate and corresponding to a termination structure region of the semiconductor device, a gate insulation layer formed in the trenches, a conductive layer formed on the gate insulation layer and protruding out of the exposed surface of the semiconductor substrate, and a metal layer formed over the first mask layer and conductive layer on the termination structure region of the semiconductor device. | 09-05-2013 |
20130249043 | WIDE TRENCH TERMINATION STRUCTURE FOR SEMICONDUCTOR DEVICE - A wide trench termination structure for semiconductor device includes a wide trench structure defined on a semiconductor substrate and having a width larger than that of narrow trench structures on an active region of the semiconductor device, an oxide layer arranged on an inner face of the wide trench structure, at least one trench polysilicon layer arranged on the oxide layer and on inner sidewall of the wide trench structure, a metal layer arranged on the oxide layer not covered by the trench polysilicon layer and on the trench polysilicon layer, and a field oxide layer arranged on the semiconductor substrate and outside the wide trench structure. | 09-26-2013 |
20140004681 | TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME | 01-02-2014 |
20140030882 | MANUFACTURING METHOD OF MULTI-TRENCH TERMINATION STRUCTURE FOR SEMICONDUCTOR DEVICE - A multi-trench termination structure for semiconductor device is disclosed, where the semiconductor device includes a semiconductor substrate and an active structure region. The multi-trench termination structure includes multiple trenches defined on an exposed face of the semiconductor substrate, a first mask layer formed on a partial exposed surface of the semiconductor substrate and corresponding to a termination structure region of the semiconductor device, a gate insulation layer formed in the trenches, a conductive layer formed on the gate insulation layer and protruding out of the exposed surface of the semiconductor substrate, and a metal layer formed over the first mask layer and conductive layer on the termination structure region of the semiconductor device. | 01-30-2014 |
20140131793 | RECTIFIER WITH VERTICAL MOS STRUCTURE - A method for manufacturing a rectifier with a vertical MOS structure is provided. A first trench structure and a first mask layer are formed at a first side of the semiconductor substrate. A second trench structure is formed in the second side of the semiconductor substrate. A gate oxide layer, a polysilicon structure and a metal sputtering layer are sequentially formed on the second trench structure. The rectifier further includes a wet oxide layer and a plurality of doped regions. The wet oxide layer is formed on a surface of the first multi-trench structure and in the semiconductor substrate. The doping regions are formed on a region between the semiconductor substrate and the second trench structure, and located beside the mask layer. The metal sputtering layer is formed on the first mask layer corresponding to the first trench structure. | 05-15-2014 |
20140167205 | SUPER JUNCTION FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A super junction for semiconductor device includes a silicon substrate with a first conductive type epitaxial layer, a plurality of highly-doped second conductive type columns formed in the first conductive type epitaxial layer, and a plurality of lightly-doped (first conductive type or second conductive type) side walls formed on outer surfaces of the highly-doped second conductive type. The semiconductor device is super-junction MOSFET, super junction MOSFET, super junction Schottky rectifier, super junction IGBT, thyristor or super junction diode. | 06-19-2014 |
20140308799 | TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure to replace the majority of the P-type structure. As a consequence, the trench isolation MOS P-N junction diode device of the present invention has the benefits of the Schottky diode and the P-N junction diode. That is, the trench isolation MOS P-N junction diode device has rapid switching speed, low forward voltage drop, low reverse leakage current and short reverse recovery time. | 10-16-2014 |
20150050791 | METHOD FOR MANUFACTURING RECTIFIER WITH VERTICAL MOS STRUCTURE - A method for manufacturing a rectifier with a vertical MOS structure is provided. A first multi-trench structure and a first mask layer are formed at a first side of the semiconductor substrate. A second multi-trench structure is formed in the second side of the semiconductor substrate. A gate oxide layer, a polysilicon structure and a metal sputtering layer are sequentially formed on the second multi-trench structure. The rectifier further includes a wet oxide layer and a plurality of doped regions. The wet oxide layer is formed on a surface of the first multi-trench structure and in the semiconductor substrate. The doping regions are formed on a region between the semiconductor substrate and the second multi-trench structure, and located beside the mask layer. The metal sputtering layer is formed on the first mask layer corresponding to the first multi-trench structure. | 02-19-2015 |
20150054115 | TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME - A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage. | 02-26-2015 |
20150084136 | MOS P-N JUNCTION DIODE WITH ENHANCED RESPONSE SPEED AND MANUFACTURING METHOD THEREOF - A MOS P-N junction diode includes a semiconductor substrate, a mask layer, a guard ring, a gate oxide layer, a polysilicon structure, a polysilicon oxide layer, a central conductive layer, ion implantation layer, a channel region, and a metallic sputtering layer. For manufacturing the MOS P-N junction diode, a mask layer is formed on a semiconductor substrate. A gate oxide layer is formed on the semiconductor substrate, and a polysilicon structure is formed on the gate oxide layer, and a polysilicon oxide layer formed on the polysilicon structure. A guard ring, a central conductive layer and a channel region are formed in the semiconductor substrate. An ion implantation layer is formed within the guard ring and the central conductive layer. Afterwards, a metallic sputtering layer is formed, and the mask layer is partially exposed. | 03-26-2015 |