Patent application number | Description | Published |
20080206479 | Organosilicon nanocluster, method of preparing the same and method of forming thin film using the same - Disclosed herein is an organosilicon nanocluster, wherein a silicon cluster is substituted with a conductive organic material, a silicon thin film including the same, a thin film transistor including the silicon thin film, a display device including the thin film transistor, and methods of forming the same. The organosilicon nanocluster may more easily and efficiently form a thin film while maintaining electrical characteristics of an amorphous silicon thin film. | 08-28-2008 |
20080241549 | Method for forming UV-patternable conductive polymer film and conductive polymer film formed by the same - Example embodiments provide a method for forming a UV-patternable conductive polymer film. According to the method, vapor-phase polymerization (VPP) may be employed to synthesize a conductive polymer and a UV-curable polymer resin may be used as a binder to form a conductive polymer film. Example embodiments also provide a conductive polymer film formed by the method. The conductive polymer film may be patterned in a relatively simple manner while maintaining increased conductivity, improved transparency and improved flexibility. Therefore, the conductive polymer film may be used as a material for transparent electrodes of a variety of display devices, e.g., LCD and PDP devices, and electronic devices, e.g., ELs and TFTs. | 10-02-2008 |
20090189149 | Composition for producing insulator and organic insulator using the same - Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing. | 07-30-2009 |
20090197090 | Composition, anti-oxide film including the same, electronic component including the anti-oxide film, and methods for forming the anti-oxide film and electronic component - Disclosed herein is a composition, including a fluorine-based polymer or a perfluoropolyether (PFPE) derivative and a PFPE-miscible polymer, an anti-oxide film and electronic component including the same, and methods of forming an anti-oxide film and an electronic component. Use of the composition may achieve formation of an anti-oxide film through a solution process and electronic components using a metal having increased conductivity and decreased production costs. | 08-06-2009 |
20090206330 | Organic insulator composition, organic insulating layer including the composition, and organic thin film transistor including the same - An organic insulator composition according to example embodiments may include an organic insulating polymer and an epoxy-based crosslinking agent. The epoxy-based crosslinking agent may have an alkyl group or a fluorine-based side chain. The organic insulator composition may be used to form an organic insulating layer having increased chemical resistance. The organic insulating layer may be used in an organic thin film transistor as a gate insulating layer. Consequently, the occurrence of hysteresis may be reduced or prevented during the operation of the organic thin film transistor, thus resulting in relatively homogeneous properties. | 08-20-2009 |
20120228595 | COMPOSITION FOR PRODUCING INSULATOR AND ORGANIC INSULATOR USING THE SAME - Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing. | 09-13-2012 |
20140048318 | COMPOSITION, ANTI-OXIDE FILM INCLUDING THE SAME, ELECTRONIC COMPONENT INCLUDING THE ANTI-OXIDE FILM, AND METHODS FOR FORMING THE ANTI-OXIDE FILM AND ELECTRONIC COMPONENT - Disclosed herein is a composition, including a fluorine-based polymer or a perfluoropolyether (PFPE) derivative and a PFPE-miscible polymer, an anti-oxide film and electronic component including the same, and methods of forming an anti-oxide film and an electronic component. Use of the composition may achieve formation of an anti-oxide film through a solution process and electronic components using a metal having increased conductivity and decreased production costs. | 02-20-2014 |
Patent application number | Description | Published |
20100096634 | Panel structure, display device including same, and methods of manufacturing panel structure and display device - Provided may be a panel structure, a display device including the panel structure, and methods of manufacturing the panel structure and the display device. Via holes for connecting elements of the panel structure may be formed by performing one process. For example, via holes for connecting a transistor and a conductive layer spaced apart from the transistor may be formed by performing only one process. | 04-22-2010 |
20100148229 | INSULATING RESIN COMPOSITION - An insulating resin composition is provided. The insulating resin composition includes (A) a silicon-based polymer having either primary or secondary amine groups or both, (B) an organometallic compound, and (C) a solvent. The physicochemical properties of the insulating resin composition are maintained during processing steps for the fabrication of a semiconductor device. Therefore, the use of the insulating resin composition prevents deterioration of the characteristics of the semiconductor device arising from defects, spots, aggregates, and the like, in an insulating film and reduces the hysteresis of the semiconductor device to improve the characteristics of the semiconductor device. | 06-17-2010 |
20100210069 | Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition - Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed. | 08-19-2010 |
20100258793 | Solution composition for forming oxide thin film and electronic device including the oxide thin film - A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1. | 10-14-2010 |
20110227064 | Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors - Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors. | 09-22-2011 |
20110233539 | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film - Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers. | 09-29-2011 |
20130015454 | PANEL STRUCTURE, DISPLAY DEVICE INCLUDING SAME, AND METHODS OF MANUFACTURING PANEL STRUCTURE AND DISPLAY DEVICE - Via holes for connecting elements of the panel structure may be formed by performing one process. For example, via holes for connecting a transistor and a conductive layer spaced apart from the transistor may be formed by performing only one process. | 01-17-2013 |
20130034708 | METHOD OF PREPARING THIN FILM, THIN FILM, APPARATUS FOR PREPARING THIN FILM, AND ELECTRONIC DEVICE INCLUDING THIN FILM - A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 Å to about 20,000 Å and a refractive index in a range of about 1.85 to about 2.0. | 02-07-2013 |
20130036943 | SOLUTION COMPOSITION FOR FORMING OXIDE THIN FILM AND ELECTRONIC DEVICE INCLUDING THE OXIDE THIN FILM - A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1. | 02-14-2013 |
20130043475 | TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS - A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain. | 02-21-2013 |
20130140551 | TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %. | 06-06-2013 |
20130183609 | THIN FILM PATTERNING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE THIN FILM PATTERNING METHOD - A thin film patterning method may include forming a thin film by coating a precursor solution containing a precursor of metal oxide onto a substrate, soft baking the thin film, exposing the thin film to light by using a photomask, developing the thin film, and hard baking the developed thin film. The precursor may include metal acetate, for example, a zinc acetate-based material, and the metal oxide thin film may include zinc oxide (ZnO). | 07-18-2013 |
20130221343 | TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING TRANSISTOR - A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer. | 08-29-2013 |
20130248851 | Oxide Thin Film, Methods Of Manufacturing Oxide Thin Film And Electronic Devices Including Oxide Thin Film - Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers. | 09-26-2013 |
20130306966 | TRANSISTOR HAVING SULFUR-DOPED ZINC OXYNITRIDE CHANNEL LAYER AND METHOD OF MANUFACTURING THE SAME - Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode. | 11-21-2013 |
20140001464 | OXYNITRIDE CHANNEL LAYER, TRANSISTOR INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME | 01-02-2014 |
20140151690 | SEMICONDUCTOR MATERIALS, TRANSISTORS INCLUDING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT). | 06-05-2014 |
20140152936 | SEMICONDUCTOR MATERIALS, TRANSISTORS INCLUDING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT). | 06-05-2014 |
20140159035 | TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor. | 06-12-2014 |
20140291664 | SOLUTION COMPOSITION FOR FORMING OXIDE SEMICONDUCTOR, AND OXIDE SEMICONDUCTOR AND ELECTRONIC DEVICE INCLUDING THE SAME - A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof. | 10-02-2014 |
20150064860 | METHODS OF FORMING SEMICONDUCTOR FILMS AND METHODS OF MANUFACTURING TRANSISTORS INCLUDING SEMICONDUCTOR FILMS - Provided are semiconductor films, methods of forming the same, transistors including the semiconductor films, and methods of manufacturing the transistors. Provided are a semiconductor film including zinc (Zn), nitrogen (N), oxygen (O), and fluorine (F), and a method of forming the semiconductor film. Provided are a semiconductor film including zinc, nitrogen, and fluorine, and a method of forming the semiconductor film. Sputtering, ion implantation, plasma treatment, chemical vapor deposition (CVD), or a solution process may be used in order to form the semiconductor films. The sputtering may be performed by using a zinc target and a reactive gas including fluorine. The reactive gas may include nitrogen and fluorine, or nitrogen, oxygen, and fluorine. | 03-05-2015 |
Patent application number | Description | Published |
20140116035 | THERMOELECTRIC GENERATOR FOR VEHICLE - A thermoelectric generator for a vehicle is mounted at an exhaust pipe and produces electricity using a temperature difference between the exhaust gas and coolant. The generator includes: a housing; thermoelectric modules mounted at an outer circumferential surface of the housing; a plurality of coolant tubes mounted so as to closely attach the thermoelectric module to the housing; first coolant containers mounted at both ends of the coolant tubes, respectively; and second coolant containers mounted at both ends of the coolant tubes, respectively. The coolant tubes are assembled to the first and second coolant containers as a modularized type, and thus assemblability may be improved and partial replacement of components in case of breakdown may be easily performed. In the coolant tube of the present invention, heat exchange is concentratedly performed at a portion in contact with the thermoelectric module, and thus generation efficiency may be more improved. | 05-01-2014 |
20140182648 | ACCUMULATED TYPE THERMOELECTRIC GENERATOR FOR VEHICLE - An accumulated type thermoelectric generator that includes an assembly of a plurality of unit modules in which a first thermoelectric element and a second thermoelectric element are installed, is mounted between an exhaust gas inlet pipe and an exhaust gas outlet pipe. A coolant inlet is formed within an upper portion of an outermost unit module in a direction of the exhaust gas outlet pipe, and a coolant outlet is formed within a lower portion of an outermost unit module in a direction of the exhaust gas inlet pipe. A pair of exhaust gas flow paths through which exhaust gas flowing into the exhaust gas inlet pipe flows may be formed on left and right sides of the unit module, and a pair of coolant flow paths through which coolant flowing into the coolant inlet flows is formed within upper and lower sides of the unit module. | 07-03-2014 |
20140182649 | ACCUMULATED TYPE THERMOELECTRIC GENERATOR FOR VEHICLE - In one embodiment, a thermoelectric generator for a vehicle is provided. In particular, a thermoelectric generator is provided that includes a thermoelectric generating unit which is mounted between an exhaust gas inlet pipe through which an exhaust gas flows within and an exhaust gas outlet pipe through which the exhaust gas is discharged. The thermoelectric generating unit also includes a coolant inlet formed on one side thereof and a coolant outlet formed on the other side. More specifically, the thermoelectric generator is formed by assembling a plurality of unit modules which each have thermoelectric elements. | 07-03-2014 |
20150040544 | STRUCTURE FOR UTILIZING EXHAUST HEAT OF VEHICLE - A structure for utilizing exhaust heat of a vehicle is provided. The structure includes a first part that has an exhaust pipe in which exhaust gas having a predetermined temperature passes through and which is heated by exchanging heat with the exhaust gas. A bypass passageway is installed within the exhaust pipe and the exhaust gas is bypassed through the bypass passageway. A thermoelectric element is attached to an exterior of the exhaust pipe, formed by bonding a P-type semiconductor and an N-type semiconductor, and produces electricity using a thermoelectric effect. A second part is attached to the exterior of the thermoelectric element and coolant flows therein. A first exhaust gas passageway is installed in the second part in a longitudinal direction and the exhaust gas passes through the first exhaust gas passageway to heat the coolant. | 02-12-2015 |
20150075160 | STRUCTURE FOR OPERATING SYSTEM FOR UTILIZING EXHAUST HEAT OF VEHICLE - A structure for operating a system for utilizing exhaust heat of a vehicle may include a high-temperature part with an exhaust pipe and a bypass passage installed in the exhaust pipe, a thermoelectric element attached to an exterior of the exhaust pipe for generating electricity, a low-temperature part attached to an exterior of the thermoelectric element for flowing a coolant, a first exhaust gas passage installed in the low-temperature part and having both ends connected to the exhaust pipe, a first valve to selectively open or close the first exhaust gas passage, a second exhaust gas passage formed in a space between the inner circumferential surface of the exhaust pipe and an outer circumferential surface of the bypass passage, a second valve disposed at a rear end of the bypass passage, coupled to a valve shaft and rotatable on the basis of the valve shaft, and an operating unit. | 03-19-2015 |
Patent application number | Description | Published |
20130145750 | THERMOELECTRIC GENERATOR OF VEHICLE - A thermoelectric generator apparatus of a vehicle may include a high temperature member, through which exhaust gas passes, a low temperature member, which maintains a temperature lower than a temperature of the high temperature member, and which includes a first coolant pipe holder supporting one of coolant pipes, a heat transfer plate which extends from the first pipe holder and may be located opposite to a corresponding high-temperature member, and a second coolant pipe holder formed on the other side of the heat transfer plate and supporting another of the coolant pipes, and a thermoelectric module disposed between the high temperature member and the low temperature member. | 06-13-2013 |
20130152561 | THERMOELECTRIC GENERATOR OF VEHICLE - A thermoelectric generator apparatus may include a high temperature member having an exhaust pipe, a ring-shaped first heat transfer plate surrounding the exhaust pipe, and a plurality of first heat exchange pins radially extending outwards from the first heat transfer plate in a predetermined degree, a low temperature member having an internal casing surrounding the exhaust pipe, an external casing surrounding the internal casing with a predetermined gap, a ring-shaped second heat transfer plate contacting with an internal wall of the internal casing, and a plurality of second heat exchange pins radially extending inwards from the second heat transfer plate in a predetermined angle, and a plurality of thermoelectric modules being in contact with the first heat exchange pins and the second heat exchange pins so as to generate electricity using a thermoelectric phenomenon caused by a temperature gap between the first heat exchange pins and the second heat exchange pins. | 06-20-2013 |
20130152562 | THERMOELECTRIC GENERATOR OF VEHICLE - A thermoelectric generator may include a high temperature member having an exhaust pipe, and a ring-shaped first heat transfer plate equipped with a first flange installed on an external wall of the exhaust pipe and formed along a longitudinal direction of the exhaust pipe, a low temperature member having a first coolant pipe enclosing an external wall of the exhaust pipe, and a ring-shaped second heat transfer plate installed inside the first coolant pipe, and on which a second flange extends along a longitudinal direction of the first coolant pipe, and ring-shaped thermoelectric modules, which may be formed by joining a P-shaped semiconductor and an N-shaped semiconductor. | 06-20-2013 |
20130160434 | THERMOELECTRIC GENERATOR OF VEHICLE - A thermoelectric generator of a vehicle converts thermal energy of exhaust gas of an engine into electric energy by using a thermoelectric phenomenon, and may include: a high-temperature part heated by exchange heat and a plurality of pairs of heat transfer plates mounted on an outer peripheral surface of an exhaust pipe at a predetermined interval; pairs of thermoelectric modules acquired by bonding a P-type semiconductor and an N-type semiconductor, interposed between the pairs of heat transfer plates to generate electricity, and electrically connected to each other; and a low-temperature part interposed between the pairs of thermoelectric modules and cooling inner surfaces of the pairs of thermoelectric modules. The plurality of thermoelectric modules generates electricity by a difference in temperature between heated outer surfaces and cooled inner surfaces. Thermoelectric efficiency is improved and a small-sized thermoelectric generator of a vehicle may be implemented. | 06-27-2013 |
Patent application number | Description | Published |
20150101884 | STRUCTURE OF EXHAUST SYSTEM FOR CDA ENGINE - A structure of an exhaust system for a CDA engine may include three baffles coupled in a main muffler in a lateral direction, and dividing an interior of the main muffler into a first space, a second space, a third space, and a fourth space, a first connecting pipe disposed outside the main muffler, connecting the second space and the third space and having a passage in which exhaust gas flows, a second connecting pipe disposed outside the main muffler, connecting the second space and the third space, and having a passage in which the exhaust gas flows, a first valve coupled to the passage of the first connecting pipe, and a second valve coupled to the passage of the second connecting pipe. | 04-16-2015 |
20150122458 | ROTARY-TYPE EXHAUST HEAT RECOVERY APPARATUS - A rotary exhaust heat recovery apparatus may include an exhaust gas pipe including a bypass path into which a high-temperature exhaust gas is introduced and bypassed and an extension part extending from a side of the bypass path in a semi-cylindrical shape to allow the exhaust gas to pass and a semi-cylindrical heat exchanger rotatably accommodated within the exhaust gas pipe, allowing heat exchange to be performed between the high-temperature exhaust gas supplied from the bypass path and a low-temperature coolant introduced through a coolant inlet, in which a side surface of the heat exchanger includes a diameter surface formed as a flat surface and an arc surface formed as a curved surface, and the diameter surface of the heat exchanger has a surface with a rotation axis of the heat exchanger as a reference thereof which is closed and another surface provided with exhaust gas inlets. | 05-07-2015 |
20150129173 | APPARATUS FOR EXHAUST HEAT RECOVERY WITH EMBEDDED VALVE ACTUATOR - An exhaust heat recovery apparatus may include a bypass valve that is rotatably provided on a bypass path through which a high-temperature exhaust gas passes to open or close the bypass path, a heat exchanger that is communicatively connected to the bypass path to allow heat exchange to be performed between the high-temperature exhaust gas supplied from the bypass path and a low-temperature coolant introduced through a coolant inlet when the bypass path is closed, a valve actuator including a rod moved up and down by expansion or contraction of a wax sealed therein, and a connection part that converts an up and down motion of the rod into a rotary motion to allow the bypass valve to open or close the bypass path along with movement of the rod. | 05-14-2015 |
20150136520 | STRUCTURE OF DUAL EXHAUST SYSTEM FOR CDA ENGINE - A structure of a dual exhaust system for a cylinder deactivation (CDA) engine, may include two inlet pipes, two outlet pipes, each of which protrudes and extends from an inside of a corresponding main muffler to an outside of the corresponding main muffler, wherein each of the two outlet pipes releases the exhaust gas passing through the corresponding main muffler to an outside of the vehicle therethrough, a connecting pipe disposed in a vehicle width direction and connecting between the two main mufflers, and a valve mounted on one outlet pipe of the two outlet pipes to open and close the one outlet pipe, wherein when the valve may be closed, the exhaust gas passing through one of the main mufflers may be introduced into the other main muffler of the two outlet pipes through the connecting pipe and then may be emitted to the outside of the vehicle. | 05-21-2015 |
Patent application number | Description | Published |
20130346269 | DIGITAL METER COMMUNICATION SYSTEM AND METHOD OF CONTROLLING THE SAME - Disclosed are a digital meter communication system and a method of controlling the same. The digital meter includes: a signal detecting unit metering analog data for used energy; a converter converting the analog data for used energy metered from the signal detecting unit into digital data for used energy; a modulating unit modulating the converted digital data for used energy; an antenna transmitting the modulated digital data for used energy to a data collection device with maximum power; and a controlling unit controlling to transmit the metered data to the data collection device through the antenna. | 12-26-2013 |
20140233144 | ROOT MEAN SQUARE DETECTOR AND CIRCUIT BREAKER USING THE SAME - The present disclosure relates to a RMS detector for directly computing a signal detected through an analog circuit to measure its RMS value, and a circuit breaker using the same. For this purpose, a RMS detector according to the present disclosure may include a plurality of voltage/current sensing units configured to detect a voltage or current shaped analog signal for an arbitrary load; a plurality of square circuit units configured to compute square function units, respectively, based on a voltage output from the plurality of voltage/current sensing units; a summing circuit unit configured to sum a plurality of output voltages output from the plurality of square circuit units, respectively; and a root circuit unit configured to compute a RMS value based on a voltage output from the summing circuit unit. | 08-21-2014 |
20140354288 | DETECTING CIRCUIT FOR CIRCUIT BREAKER - The present disclosure relates to a detecting circuit for a circuit breaker, comprises: a detection sensor configured to output a detection signal by detecting a voltage or a current on an alternating current electric power circuit; a low pass filter configured to output a signal from the detection sensor after removing a high frequency component from the signal; an offset remover configured to output a signal from the low pass filter after removing a direct current offset from the signal; an amplifier configured to amplify a signal from the offset remover, and to output the signal; and a comparator configured to output a breaking control signal such that the circuit breaker operates to a circuit breaking position, if the detection signal input to the amplifier is equal to or larger than a reference voltage. | 12-04-2014 |
20150013744 | PHOTOVOLTAIC SYSTEM - Disclosed is a photovoltaic system including a power optimizer, capable of minimizing noise occurring due to shading, an error in an output power of a photovoltaic module, etc. while a maximum power point tracking (MPPT) algorithm is performed. The photovoltaic system includes a photovoltaic module; a power optimizer; and an inverter, wherein the power optimizer includes: an input unit configured to receive an output power of the photovoltaic module; a sensing unit configured to sense an output voltage and an output current of the photovoltaic module; and a controller configured to control an output of the power optimizer, by comparing the presently-sensed current with a previously-sensed current. | 01-15-2015 |
20150192631 | EARTH LEAKAGE CIRCUIT BREAKER - Disclosed is an earth leakage circuit breaker. The earth leakage circuit breaker is capable of determining an earth leakage signal applied thereto with high accuracy, by performing a trip operation by determining noise components included in the earth leakage signal, such as switching noise or harmonics, based on a determination signal generated by tracking the earth leakage signal. The earth leakage circuit breaker is capable of precisely determining whether to perform a trip operation with respect to an earth leakage signal applied thereto. The earth leakage circuit breaker is capable of preventing a malfunction due to a noise signal similar to an earth leakage signal. | 07-09-2015 |