Patent application number | Description | Published |
20100102386 | Lateral double-diffused metal oxide semiconductor (LDMOS) transistors - Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, an LDMOS transistor can include: (i) an n-doped deep n-well (DNW) region on a substrate; (ii) a gate oxide and a drain oxide between a source region and a drain region of the LDMOS transistor, the gate oxide being adjacent to the source region, the drain oxide being adjacent to the drain region; (iii) a conductive gate over the gate oxide and a portion of the drain oxide; (iv) a p-doped p-body region in the source region; (v) an n-doped drain region in the drain region; (vi) a first n-doped n+ region and a p-doped p+ region adjacent thereto in the p-doped p-body region of the source region; and (vii) a second n-doped n+ region in the drain region. | 04-29-2010 |
20100173458 | LATERAL DOUBLE DIFFUSED MOSFET TRANSISTOR WITH A LIGHTLY DOPED SOURCE - Methods and systems for monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow are described. | 07-08-2010 |
20100301413 | Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devices - Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, a method of fabricating an LDMOS transistor with source, drain, and gate regions on a substrate, can include: forming p-type and n-type buried layer (PBL, NBL) regions; growing an epitaxial (N-EPI) layer on the NBL/PBL regions; forming a p-doped deep p-well (DPW) region on the PBL region; forming a well region in the N-EPI layer; forming a doped body region; after the doped body region formation, forming an active area and a field oxide (FOX) region, and forming a drain oxide between the source and drain regions of the LDMOS transistor; after the doped body region formation, forming a gate oxide adjacent to the source and drain regions, and forming a gate on the gate oxide and a portion of the drain oxide; and forming a doped drain region, and first and second doped source regions. | 12-02-2010 |
20110031947 | Flip chip package for monolithic switching regulator - Methods and apparatuses related to packaging a monolithic voltage regulator are disclosed. In one embodiment, an apparatus includes: (i) a monolithic voltage regulator with a transistor arranged as parallel transistor devices; (ii) bumps on the monolithic voltage regulator to form connections to source and drain terminals of the transistor; (iii) a single layer lead frame with a plurality of interleaving lead fingers coupled to the monolithic voltage regulator via the bumps, where the single layer lead frame includes first and second surfaces, where the first surface includes a first pattern to form connections to the bumps, and where the second surface includes a second pattern that is different from the first pattern; and (iv) a flip-chip package encapsulating the monolithic voltage regulator, the bumps, and the single layer lead frame, where the flip-chip package has external connectors of the monolithic voltage regulator at the second surface of the single layer lead frame. | 02-10-2011 |
20110133274 | LATERAL DOUBLE-DIFFUSED MOSFET - A LDMOS transistor is implemented in a first impurity region on a substrate. The LDMOS transistor has a source that includes a second impurity region. The second impurity region is implanted into the surface of the substrate within the first impurity region. Additionally, the LDMOS transistor has a drain that includes a third impurity region. The third impurity region is implanted into the surface of the substrate within the first impurity region. The third impurity region is spaced a predetermined distance away from a gate of the LDMOS transistor. The drain of the LDMOS transistor further includes a fourth impurity region within the third impurity region. The fourth impurity region provides an ohmic contact for the drain. | 06-09-2011 |
20110269286 | HEAVILY DOPED REGION IN DOUBLE-DIFFUSED SOURCE MOSFET (LDMOS) TRANSISTOR AND A METHOD OF FABRICATING THE SAME - A transistor includes a source, a drain and a gate. The source includes a p-doped p-body, a p+ region overlapping the p-body, an n+ region overlapping the p-body in proximity to the p+ region, and an n-doped source, heavily double-diffused (SHDD) region, only into the source region of the transistor, the SHDD region having a depth about equal to that of the first n+ region and overlapping the first n+ region. The drain includes a second n+ region and an n-doped shallow drain overlapping the second n+ region. The gate includes a gate oxide and a conductive material over the gate oxide. The SHDD region extends further laterally than the first n+ region beneath the gate oxide. The SHDD region is implanted using a dopant concentration greater than that of the n-doped shallow drain but less than that of the first n+ region. | 11-03-2011 |
20120091527 | LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTORS - Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, an LDMOS transistor can include: (i) an n-doped deep n-well (DNW) region on a substrate; (ii) a gate oxide and a drain oxide between a source region and a drain region of the LDMOS transistor, the gate oxide being adjacent to the source region, the drain oxide being adjacent to the drain region; (iii) a conductive gate over the gate oxide and a portion of the drain oxide; (iv) a p-doped p-body region in the source region; (v) an n-doped drain region in the drain region; (vi) a first n-doped n+ region and a p-doped p+ region adjacent thereto in the p-doped p-body region of the source region; and (vii) a second n-doped n+ region in the drain region. | 04-19-2012 |
20120293017 | INTEGRATED PROTECTION DEVICES WITH MONITORING OF ELECTRICAL CHARACTERISTICS - Disclosed are systems, devices, circuits, components, mechanisms, and processes in which a switching mechanism can be coupled between components. The switching mechanism is configured to have an on state or an off state, where the on state allows current to pass along a current path. A monitoring mechanism has one or more sensing inputs coupled to sense an electrical characteristic at the current path. The electrical characteristic can be a current, voltage, and/or power by way of example. The monitoring mechanism is configured to output a reporting signal indicating the sensed electrical characteristic. The monitoring mechanism can be integrated with the switching mechanism on a chip. | 11-22-2012 |
20130015523 | FABRICATION OF LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) DEVICES - Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, a method of fabricating an LDMOS transistor with source, drain, and gate regions on a substrate, can include: forming p-type and n-type buried layer (PBL, NBL) regions; growing an epitaxial (N-EPI) layer on the NBL/PBL regions; forming a p-doped deep p-well (DPW) region on the PBL region; forming a well region in the N-EPI layer; forming a doped body region; forming an active area and a field oxide (FOX) region, and forming a drain oxide between the source and drain regions of the LDMOS transistor; forming a gate oxide adjacent to the source and drain regions, and forming a gate on the gate oxide and a portion of the drain oxide; and forming a doped drain region, and first and second doped source regions. | 01-17-2013 |
20130200452 | LATERAL DOUBLE-DIFFUSED MOSFET - A LDMOS transistor is implemented in a first impurity region on a substrate. The LDMOS transistor has a source that includes a second impurity region. The second impurity region is implanted into the surface of the substrate within the first impurity region. Additionally, the LDMOS transistor has a drain that includes a third impurity region. The third impurity region is implanted into the surface of the substrate within the first impurity region. The third impurity region is spaced a predetermined distance away from a gate of the LDMOS transistor. The drain of the LDMOS transistor further includes a fourth impurity region within the third impurity region. The fourth impurity region provides an ohmic contact for the drain. | 08-08-2013 |
20130234249 | Methods and Apparatus for LDMOS Transistors - An LDMOS transistor includes a gate including a conductive material over an insulator material, a source including a first impurity region and a second impurity region, a third impurity region, and a drain including a fourth impurity region and a fifth impurity region. The first impurity region is of a first type, and the second impurity region is of an opposite second type. The third impurity region extends from the source region under the gate and is of the first type. The fourth impurity region is of the second type, the fifth impurity region is of the second type, and the fourth impurity region impinges the third impurity region. | 09-12-2013 |
20140134834 | Method of Fabricating Power Transistor with Protected Channel - A transistor includes a substrate, a well formed in the substrate, a drain including a first impurity region implanted in the well, a source including a second impurity region implanted in the well and spaced apart from the first impurity region, a channel for current flow from the drain to the source, and a gate to control a depletion region between the source and the drain. The channel has an intrinsic breakdown voltage, and the well, drain and source are configured to provide an extrinsic breakdown voltage lower than the intrinsic breakdown voltage and such that breakdown occurs in a breakdown region in the well located outside the channel and adjacent the drain or the source. | 05-15-2014 |
20140151800 | LATERAL DOUBLE-DIFFUSED MOSFET - A LDMOS transistor is implemented in a first impurity region on a substrate. The LDMOS transistor has a source that includes a second impurity region. The second impurity region is implanted into the surface of the substrate within the first impurity region. Additionally, the LDMOS transistor has a drain that includes a third impurity region. The third impurity region is implanted into the surface of the substrate within the first impurity region. The third impurity region is spaced a predetermined distance away from a gate of the LDMOS transistor. The drain of the LDMOS transistor further includes a fourth impurity region within the third impurity region. The fourth impurity region provides an ohmic contact for the drain. | 06-05-2014 |
Patent application number | Description | Published |
20100277410 | LED SELECTION FOR WHITE POINT CONTROL IN BACKLIGHTS - Systems, methods, and devices are provided for maintaining a target white point on a light emitting diode (LED) based backlight. In one embodiment, the backlight may include two or more groups of LEDs, each driven at a respective driving strength. Each group may include LEDs of a different chromaticity, and the respective driving strengths may be adjusted, for example, by varying the duty cycles, to maintain the target white point. To ensure that the white point may be maintained over an operational temperature range of the backlight, the LEDs may be selected so that the chromaticities of each group of LEDs are separated by at least a minimum chromaticity difference. Further, the LEDs may be selected so that at the equilibrium temperature of the backlight, the LEDs may produce the target white point when driven at substantially equal driving strengths. | 11-04-2010 |
20110090142 | BACKLIGHT UNIT COLOR COMPENSATION TECHNIQUES - An edge-lit backlight unit for displays is provided. In one embodiment, the backlight may include a light guide configured to receive light from a light source along a first lateral edge. The received light propagates towards a second opposite lateral edge. The backlight unit may include an arrangement of light-extracting elements configured to extract a portion of the propagating light and to allow the remaining portion to reach the second edge. In one embodiment, a specular reflector disposed at the second edge causes the light reaching the second edge to retro-propagate back towards the first edge. In certain embodiments, the retro-propagating light may be between approximately 5 to 35 percent of the total light received by the light guide. The retro-propagating light may be extracted by multiple light-extracting elements and mixed with the extracted propagating light to provide improved color uniformity along an axis of the display. | 04-21-2011 |
20130335677 | Quantum Dot-Enhanced Display Having Dichroic Filter - A display device is provided. The display device includes a light source emitting a blue light and a light emitting layer including a first group of red quantum dots and a second group of green quantum dots. The light emitting layer is configured to absorb a first portion of the blue light from the light source to emit red light and green light and to transmit a second portion of the blue light. The display device also includes a dichroic filter layer configured to reflect a portion of the transmitted second portion of the blue light such that the reflected portion of the blue light is recycled in the light emitting layer and to transmit a remaining portion of the transmitted second portion of the blue light to output a white light. | 12-19-2013 |
20140035960 | BACKLIGHT DIMMING CONTROL FOR A DISPLAY UTILIZING QUANTUM DOTS - Quantum dot backlights for use in displays and processes for controlling the dimming of quantum dot backlights are provided. The backlight can include an LED (e.g., a blue LED) configured to emit a light through a sheet of quantum dots. The quantum dots can be configured to emit colored light (e.g., red and green light) in response to the light emitted from the LED. To control the relative luminance of the LED, the backlight can be controlled through the use of current dimming to adjust the brightness of the LED at high relative luminance settings to increase the light output efficiency and can include the use of pulse width modulation to adjust the brightness of the LED at low relative luminance settings to reduce the amount of wavelength shift experienced by the LED. | 02-06-2014 |
20140036538 | COATINGS TO ELIMINATE LED HOT SPOTS - A display that contains a backlight that incorporates an optical coating either on or above the light guide in order to reduce the appearance of optical hotspots on the display is provided. The optical coating can be patterned to correspond to the position of each light emitting diode in the display and can be made, as an example, from either reflective, diffusive or dichroic material. The coating can work to overcome the hotspots created by insufficient light mixing distance in the backlight. | 02-06-2014 |
20150176775 | Display Having Backlight With Narrowband Collimated Light Sources - A display has an array of display pixels formed from display layers such as one or more polarizer layers, a substrate on which an array of display pixel elements such as color filter elements and downconverter elements are formed, a liquid crystal layer, and a thin-film transistor layer that includes display pixel electrodes and display pixel thin-film transistors for driving control signals onto the display pixel electrodes to modulate light passing through the display pixels. A light source such as one or more laser diodes or light-emitting diodes may be used to generate light for the display. The light may be launched into the edge of a polymer layer or other light guide plate structure. A light guide plate may include phase-matched structures such as holographically recorded gratings or photonic lattices that direct the light upwards through the array of display pixels. | 06-25-2015 |
20150355399 | Display with Structures for Reducing Blue Edge Effects - Display backlight structures may provide backlight illumination that passes through display layers in the display. Light-emitting diodes may emit blue light into an edge of a light guide plate. Optical films may overlap the light guide plate. The optical films may include a quantum dot enhancement film. A peripheral strip of yellow reflector or other light control structures may be incorporated into the backlight structures to reduce blue edge effects. The light control structures may have features with a spatially varying density, may be formed from quantum dot enhancement film, or may be formed form other structures. The light control structures may be formed on the surfaces of the optical films, on a reflective layer under the light guide plate, or on a surface of a mold frame or other structure that lies in a plane parallel to the plane of the light guide plate. | 12-10-2015 |
20160070137 | Quantum Dot-Enhanced Display Having Dichroic Filter - A display device is provided. The display device includes a light source emitting a blue light and a light emitting layer including a first group of red quantum dots and a second group of green quantum dots. The light emitting layer is configured to absorb a first portion of the blue light from the light source to emit red light and green light and to transmit a second portion of the blue light. The display device also includes dichroic filter layers to improve light recycling and backlight efficiency. | 03-10-2016 |
Patent application number | Description | Published |
20100291976 | METHOD AND APPARATUS FOR POWER CONSERVATION FOR AN ELECTRONIC DEVICE - An apparatus comprises a first interface module configured to wirelessly interface with one or more user devices; a second interface module configured to interface with a wireless communication network; and a controller. The controller is configured to detect a signal received through the second interface module, the signal including a command; and execute the command. Executing the command causes one or more components of the apparatus to exit a power conservation mode and enter a full operation mode. | 11-18-2010 |
20120179785 | METHOD AND APPARATUS FOR LOADING LANDING PAGE - A Universal Serial Bus (USB) modem/Wireless Wide Area Network (WWAN) device is provided that when connected to a host device, presents itself as an Ethernet endpoint to the host device, without requiring additional software/drivers to be downloaded to the host device. Embedded in the USB modem/WWAN device are various modules that provide functionality allowing either automatic connection to the Internet or redirection to a local Web User Interface (UI) that a user may employ to configure the USB modem/WWAN device and/or manually connect to the Internet. Additionally, the USB modem/WWAN device employs predetermined rules to determine whether or not/how the redirection occurs, including in scenarios where wireless connectivity to the Internet is unavailable. | 07-12-2012 |
20120221685 | METHOD AND APPARATUS FOR LOADING LANDING PAGE - A Universal Serial Bus (USB) modem/Wireless Wide Area Network (WWAN) device is provided that when connected to a host device, presents itself as an Ethernet endpoint to the host device, without requiring additional software/drivers to be downloaded to the host device. Embedded in the USB modem/WWAN device are various modules that provide functionality allowing either automatic connection to the Internet or redirection to a local Web User Interface (UI) that a user may employ to configure the USB modem/WWAN device and/or manually connect to the Internet. Additionally, the USB modem/WWAN device employs predetermined rules to determine whether or not/how the redirection occurs, including in scenarios where wireless connectivity to the Internet is unavailable. | 08-30-2012 |
20140164630 | METHOD AND APPARATUS FOR LOADING A LANDING PAGE - A Universal Serial Bus (USB) modem/Wireless Wide Area Network (WWAN) device is provided that when connected to a host device, presents itself as an Ethernet endpoint to the host device, without requiring additional software/drivers to be downloaded to the host device. Embedded in the USB modem/WWAN device are various modules that provide functionality allowing either automatic connection to the Internet or redirection to a local Web User Interface (UI) that a user may employ to configure the USB modem/WWAN device and/or manually connect to the Internet. Additionally, the USB modem/WWAN device employs predetermined rules to determine whether or not/how the redirection occurs, including in scenarios where wireless connectivity to the Internet is unavailable. | 06-12-2014 |
Patent application number | Description | Published |
20080267951 | Methods for Treating Cancer Using Agents That Inhibit Wnt16 Signaling - This invention relates to methods of inhibiting the growth of cells, in particular cancer cells that over express Wnt16 protein. The methods comprise contacting the cell with an agent that binds to Wnt16 mRNA or Wnt16 protein, interferes with Wnt16 signaling or inhibits binding of the Wnt16 protein to another protein, such as a Frizzled receptor. | 10-30-2008 |
20090202539 | METHOD FOR TREATING CANCER USING ANTI-WNT2 MONOCLONAL ANTIBODIES AND siRNA - This invention relates to methods of inhibiting the growth of cells, in particular cancer cells, that overexpress Wnt2. The methods comprise contacting the cell with an agent that binds to Wnt2 mRNA or Wnt2 protein, interferes with Wnt2 signaling or inhibits binding of the Wnt2 protein to another protein, such as a Frizzled receptor. | 08-13-2009 |
20090304695 | METHODS FOR TREATING CANCER BY INHIBITING WNT SIGNALING - This invention relates to methods of inhibiting the growth of cancer cells that overexpress a Wnt protein. The methods comprise contacting the cell with an agent that inhibits binding of the Wnt protein to a Frizzled receptor. | 12-10-2009 |
20100292162 | SOCS-3 PROMOTER METHYLATION IN CANCER - This invention provides compositions and methods for the diagnosis and treatment of cancers that exhibit decreased SOCS-3 expression. | 11-18-2010 |
20110160263 | Small molecule inhibition of PDZ-domain interaction - Novel compounds that have been found effective in inhibiting PDZ domain interactions, and particularly interactions of PDZ domains in MAGIs with the oncogenic (tumor suppressor) protein PTEN and interactions between the PDZ domain in the Dishevelled (Dvl) protein and other proteins such as the Frizzled (Fz) protein, have the general formula (I) or (III). The invention also includes combinatorial libraries, arrays and methods for screening and studying proteins using such compounds. Compounds of the invention have produced apoptosis in certain cell lines that overexpress the Dishevelled protein (Dvl), inhibiting Wnt signaling. | 06-30-2011 |
20110319337 | Dominant Negative WNT2 Compositions and Methods of Use - The present disclosure provides compositions, pharmaceutical preparations, kits and methods for inhibiting cell proliferation by contacting a cell expressing Fzd8 with a truncated Wnt2 polypeptide which acts as a dominant negative inhibitor of Fzd8 signaling. The present disclosure provides compositions, kits and methods for the detection of cancer by determining the level of Fzd8 and/or Wnt2 expression in a cell. | 12-29-2011 |
20120329097 | NUCLEIC ACID AMPLIFICATION - The present invention provides improved methods for the amplification of nucleic acid molecules. Methods for amplifying target polynucleotides, including mRNA, using oligonucleotides, DNA and RNA polymerases are provided. The invention further provides compositions and kits for practicing the methods, as well as methods which use the amplification products. | 12-27-2012 |
20130230852 | PROTEIN KINASE CK2 GENE MUTATIONS, AMPLIFICATIONS AND POLYMORPHISMS IN HUMAN CANCERS AND METHODS OF USE - The present disclosure provides methods and compositions for diagnosis and for providing a prognosis of a cancer patient by assessing CK2 alpha 1 pseudogene (CSNK2A1P) status. The present disclosure also provides polypeptide, polynucleotide, host cell, and transgenic animal compositions associated with CSNK2A1P. | 09-05-2013 |
20130273534 | SOCS-3 PROMOTER METHYLATION IN CANCER - This invention provides compositions and methods for the diagnosis and treatment of cancers that exhibit decreased SOCS-3 expression. | 10-17-2013 |
20150275257 | Nucleic Acid Amplification - The present invention provides improved methods for the amplification of nucleic acid molecules. Methods for amplifying target polynucleotides, including mRNA, using oligonucleotides, DNA and RNA polymerases are provided. The invention further provides compositions and kits for practicing the methods, as well as methods which use the amplification products. | 10-01-2015 |
Patent application number | Description | Published |
20080221098 | COMPOUNDS AND COMPOSITIONS AS PROTEIN KINASE INHIBITORS - The invention provides a novel class of compounds, pharmaceutical compositions comprising such compounds and methods of using such compounds to treat or prevent diseases or disorders associated with abnormal or deregulated kinase activity, particularly diseases or disorders that involve abnormal activation of the Abl, BCR-Abl, Bmx, c-Raf, Csk, Fes, FGFR, Flt3, Ikk, IR, JNK, Lck, Mkk, PKC, PKD, Rsk, SAPK, Syk, Trk, BTK, Src, EGFR, IGF, Mek, Ros and Tie2 kinases. | 09-11-2008 |
20090105250 | COMPOUNDS AND COMPOSITIONS AS PROTEIN KINASE INHIBITORS - The invention provides a novel class of compounds, pharmaceutical compositions comprising such compounds and methods of using such compounds to treat or prevent diseases or disorders associated with abnormal or deregulated kinase activity, particularly diseases or disorders that involve abnormal activation of the Abl, Bcr-Abl, FGFR3, PDGFRβ and b-Raf kinases. | 04-23-2009 |
20090118273 | Compounds and Compositions as Protein Kinase Inhibitors - The invention provides a novel class of compounds, pharmaceutical compositions comprising such compounds and methods of using such compounds to treat or prevent diseases or disorders associated with abnormal or deregulated kinase activity, particularly diseases or disorders that involve abnormal activation of Abl, Bcr-Abl, Bmx, BTK, b-RAF, c RAF, CSK, cSRC, Fes, FGFR3, Flt3, IKKα, IKKβ, JNK1α1, JNK2α2, Lck, Met, MKK4, MKK6, p70S6K, PAK2, PDGFRα, PKA, PKCα, PKD2, ROCK-II, Ros, Rsk1, SAPK2α, SAPK2β, SAPK3, SAPK4, SGK, Syk, Tie2 and TrkB kinases. | 05-07-2009 |
Patent application number | Description | Published |
20140100855 | Audio Signal Transient Detection - Provided are, among other things, systems, methods and techniques for detecting whether a transient exists within an audio signal. According to one representative embodiment, a segment of a digital audio signal is divided into blocks, and a norm value is calculated for each of a number of the blocks, resulting in a set of norm values for such blocks, each such norm value representing a measure of signal strength within a corresponding block. A maximum norm value is then identified across such blocks, and a test criterion is applied to the norm values. If the test criterion is not satisfied, a first signal indicating that the segment does not include any transient is output, and if the test criterion is satisfied, a second signal indicating that the segment includes a transient is output. According to this embodiment, the test criterion involves a comparison of the maximum norm value to a different second maximum norm value, subject to a specified constraint, within the segment. | 04-10-2014 |
20140249805 | Variable-Resolution Processing of Frame-Based Data - Provided are systems, methods and techniques for processing frame-based data. A frame of data, an indication that a transient occurs within the frame, and a location of the transient within the frame are obtained. Based on the indication of the transient, a block size is set for the frame, thereby effectively defining a plurality of equal-sized blocks within the frame. In addition, different window functions are selected for different ones of the plurality of equal-sized blocks based on the location of the transient, and the frame of data is processed by applying the selected window functions. | 09-04-2014 |
20140324440 | Detection of an Audio Signal Transient Using First and Second Maximum Norms - Provided are, among other things, systems, methods and techniques for detecting whether a transient exists within an audio signal. According to one representative embodiment, a segment of a digital audio signal is divided into blocks, and a norm value is calculated for each of a number of the blocks, resulting in a set of norm values for such blocks, each such norm value representing a measure of signal strength within a corresponding block. A maximum norm value is then identified across such blocks, and a test criterion is applied to the norm values. If the test criterion is not satisfied, a first signal indicating that the segment does not include any transient is output, and if the test criterion is satisfied, a second signal indicating that the segment includes a transient is output. According to this embodiment, the test criterion involves a comparison of the maximum norm value to a different second maximum norm value, subject to a specified constraint, within the segment. | 10-30-2014 |
Patent application number | Description | Published |
20090299753 | Audio Signal Transient Detection - Provided are, among other things, systems, methods and techniques for detecting whether a transient exists within an audio signal. According to one representative embodiment, a segment of a digital audio signal is divided into blocks, and a norm value is calculated for each of a number of the blocks, resulting in a set of norm values for such blocks, each such norm value representing a measure of signal strength within a corresponding block. A maximum norm value is then identified across such blocks, and a test criterion is applied to the norm values. If the test criterion is not satisfied, a first signal indicating that the segment does not include any transient is output, and if the test criterion is satisfied, a second signal indicating that the segment includes a transient is output. According to this embodiment, the test criterion involves a comparison of the maximum norm value to a different second maximum norm value, subject to a specified constraint, within the segment. | 12-03-2009 |
20110173014 | Audio Decoding - Provided are, among other things, systems, methods and techniques for decoding an audio signal from a frame-based bit stream. Each frame includes processing information pertaining to the frame and entropy-encoded quantization indexes representing audio data within the frame. The processing information includes: (i) code book indexes, (ii) code book application information specifying ranges of entropy-encoded quantization indexes to which the code books are to be applied, and (iii) window information. The entropy-encoded quantization indexes are decoded by applying the identified code books to the corresponding ranges of entropy-encoded quantization indexes. Subband samples are then generated by dequantizing the decoded quantization indexes, and a sequence of different window functions that were applied within a single frame of the audio data is identified based on the window information. Time-domain audio data are obtained by inverse-transforming the subband samples and using the plural different window functions indicated by the window information. | 07-14-2011 |
20110307261 | Quantizing a Joint-Channel-Encoded Audio Signal - Provided are, among other things, systems, methods and techniques for quantizing a joint-channel-encoded audio signal, e.g., by: (a) obtaining an audio signal that includes a plurality of channels, with each channel including a block of samples; (b) segmenting the samples within each of a plurality of the blocks into quantization units; (c) jointly sum/difference encoding at least one pair of corresponding quantization units in different channels to produce a sum channel quantization unit and a difference channel quantization unit; (d) initializing quantization step sizes among the quantization units across the plurality of channels; (e) quantizing the samples in the quantization units using the assigned quantization step sizes; (f) calculating quantization errors for the quantization units; (g) based on the quantization errors, identifying a target quantization unit, from among the quantization units, for reduction of quantization step size; (h) determining whether the target quantization unit has been jointly sum/difference encoded with another quantization unit; (i) if the target quantization unit has not been jointly sum/difference encoded with another quantization unit, re-quantizing the target quantization unit using a decreased quantization step size; (j) if the target quantization unit has been jointly sum/difference encoded with another quantization unit, then: (i) designating the sum channel quantization unit as a target S/D quantization unit if the sum channel quantization unit has a greater quantization error than the difference channel quantization unit, (ii) designating the difference channel quantization unit as the target S/D channel quantization unit if the difference channel quantization unit has a greater quantization error than the sum channel quantization unit, and (iii) re-quantizing the target S/D channel quantization using a decreased quantization step size; (k) recalculating the quantization error for the target quantization unit; and (l) repeating (g)-(k) until a specified criterion is satisfied. | 12-15-2011 |
20120059659 | Codebook Segment Merging - Provided are, among other things, systems, methods and techniques for merging entropy codebook application ranges within an audio signal. According to one embodiment, an audio signal is obtained, the audio signal including quantization indexes, identification of segments of said quantization indexes, and indexes of entropy codebooks that have been assigned to such segments, with a single entropy codebook index having been assigned to each said segment; potential merging operations in which specified segments potentially would be merged with each other are identified; bit penalties are estimated for the potential merging operations; then, the potential merging operation having the lowest estimated the penalty is performed. | 03-08-2012 |
20120303375 | AUDIO DECODING USING VARIABLE-LENGTH CODEBOOK APPLICATION RANGES - Provided are, among other things, systems, methods and techniques for decoding an audio signal from a frame-based bit stream. At least one frame includes processing information pertaining to the frame and entropy-encoded quantization indexes representing audio data within the frame. The processing information includes: (i) code book indexes, and (ii) code book application information specifying ranges of entropy-encoded quantization indexes to which the code books are to be applied. The entropy-encoded quantization indexes are decoded by applying the identified code books to the corresponding ranges of entropy-encoded quantization indexes. | 11-29-2012 |
20130253938 | Audio Encoding Using Adaptive Codebook Application Ranges - A low bit rate digital audio coding system includes an encoder which assigns codebooks to groups of quantization indexes based on their local properties resulting in codebook application ranges that are independent of block quantization boundaries. The invention also incorporates a resolution filter bank, or a tri-mode resolution filter bank, which is selectively switchable between high and low frequency resolution modes or high, low and intermediate modes such as when detecting transient in a frame. The result is a multichannel audio signal having a significantly lower bit rate for efficient transmission or storage. The decoder is essentially an inverse of the structure and methods of the encoder, and results in a reproduced audio signal that cannot be audibly distinguished from the original signal. | 09-26-2013 |