O'Keefe, GB
Eoin O'Keefe, Hampshire GB
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20090087553 | Thermal Infra-Red Reflective Pigments for Coatings - This invention relates to the control of radiant thermal energy and more specifically to highly Thermal Infrared (IR | 04-02-2009 |
Eoin S. O'Keefe, Famborough GB
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20090252982 | Indentification device - A sheet of thermally reflective material ( | 10-08-2009 |
Eoin Seiorse O'Keefe, Gosport GB
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20120182605 | Identification Device - The invention relates generally to passive infrared markers and especially to markers which are reflective in the thermal and/or near infrared wavebands. A thermal infrared marker device is provided taking the form of a truncated pyramid, preferably a hollow truncated pyramid, said device comprising n side facets, where n≧3, and a top facet ( | 07-19-2012 |
20140254000 | Infrared Transparent Film - The invention relates to a thermal infrared transparent polymer film suitable for use in an identification device, said film comprising an infrared transparent polymer matrix with a pigment dispersed therein, wherein the thickness of the polymer film is greater than 30 micron and wherein the polymer film has an average transmission in the thermal infrared of greater than or equal to 0.5. Preferably, the pigment comprises an inorganic material. There is further provided a thin film, thermally reflective material ( | 09-11-2014 |
Eoin Seirorse O'Keefe, Gosport GB
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20110205731 | Identification Device - The invention relates generally to an electro-optic identification device, particularly to a helmet-mounted identification device. An identification device suitable for mounting on an object comprises a support structure having a plurality of electro-optic emitters positioned thereon, wherein the support structure conforms, in use, to the shape of said object. Preferably, the support structure takes the form of a plurality of emitter arms radiating from a hub, each arm comprising one or more electro-optic emitters. The electro-optic emitters may include visible emitters and/or infrared emitters, and are more preferably selected from the group consisting of near infrared emitters, medium wave thermal infrared emitters and long wave thermal infrared emitters, or any combination thereof. The invention has particular utility in military applications. | 08-25-2011 |
Kevin O'Keefe, Oxford GB
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20150086148 | HIGH HARMONIC OPTICAL GENERATOR - A high harmonic optical generator comprising a laser arrangement for emitting a beam of polarized radiation at a fundamental frequency and an optical waveguide having a hollow core for a gaseous harmonic generation medium for the generation of high harmonics of the fundamental frequency, the optical waveguide having an optical propagation axis along the hollow core, the laser arrangement is configured to couple the beam of polarized radiation along the propagation axis of the hollow core optical waveguide to provide a beam of optical driving radiation for the high harmonic generation, the optical driving radiation having a plane of polarization that rotates about the propagation axis. | 03-26-2015 |
Matthew F. O'Keefe, Aycliffe GB
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20100230656 | LIGHT EMITTING STRUCTURE AND METHOD OF MANUFACTURE THEREOF - A semiconductor structure having an electrically conducting silicon substrate and a GaN semiconductor device separated from the substrate by a buffer layer is provided. The buffer layer electrically connects the silicon substrate with the GaN semiconductor device. In addition, a GaN LED arranged in a flip chip orientation on the buffer layer on the substrate is provided. | 09-16-2010 |
Matthew Francis O'Keefe, Newton Aycliffe GB
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20110017972 | LIGHT EMITTING STRUCTURE WITH INTEGRAL REVERSE VOLTAGE PROTECTION - A light emitting structure having reverse voltage protection (RVP) is provided along with disclosure of a method for fabricating the light emitting structure. The light emitting structure includes a substrate having a first face, a second face, and a p-n junction formed within the substrate between a p-type layer and an n-type layer, wherein the p-type layer and the n-type layer are adapted as a RVP diode. A buffer layer is provided on the substrate, and a light emitting diode (LED) is fabricated on the buffer layer. The LED is then electrically coupled to the RVP diode in an anti-parallel diode pair (APDP) configuration. | 01-27-2011 |
20110101300 | REFLECTING LIGHT EMITTING STRUCTURE AND METHOD OF MANUFACTURE THEREOF - A reflecting light emitting structure includes a substrate having a plurality of grooves formed in a first face of the substrate is disclosed. The first face is in a first crystallographic plane. Each of the plurality of grooves includes a first sidewall that is coplanar with a second crystallographic plane and a second sidewall that is coplanar with a third crystallographic plane. A buffer layer is provided on the substrate to reduce mechanical strain between the substrate and a light emitting diode (LED) fabricated on the buffer layer. | 05-05-2011 |
Matthew Francis O'Keefe, Co. Durham GB
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20090261382 | Compound Semiconductor Substrate For a Field Effect Transistor - A III-V field effect transistor comprising | 10-22-2009 |
Matthew Francis O'Keefe, County Durham GB
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20080237643 | TRANSISTOR - A heterojunction bipolar transistor comprising | 10-02-2008 |
20110243520 | OPTICAL WAVEGUIDE STRUCTURE AND METHOD OF MANUFACTURE THEREOF - An optical waveguide structure including a III-V semiconductor substrate, a III-V semiconductor top layer, and an etch stop layer sandwiched therebetween, the etch stop layer containing aluminium and phosphorous, the top layer including first and second spaced apart recesses extending through the top layer to the etch stop layer and defining an optical waveguide therebetween. Also a method of manufacture of an optical waveguide structure including the steps of: providing a multilayer semiconductor wafer including a III-V semiconductor substrate, a III-V semiconductor top layer and an etch stop layer sandwiched therebetween, the etch stop layer including aluminium and phosphorous; and etching through the top layer to the etch stop layer by use of a dry etch containing chlorine to provide two spaced apart recesses defining the optical waveguide therebetween. | 10-06-2011 |
20140287590 | Optical Waveguide Structure and Method of Manufacture Thereof - A method of manufacture of an optical waveguide structure including the steps of: providing a multilayer semiconductor wafer including a III-V semiconductor substrate, a III-V semiconductor top layer and an etch stop layer sandwiched therebetween, the etch stop layer including aluminium and phosphorous; and etching through the top layer to the etch stop layer by use of a dry etch containing chlorine to provide two spaced apart recesses defining the optical waveguide therebetween. | 09-25-2014 |
Philip O'Keefe, Leicestershire GB
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20090099196 | Chemical Process - The present invention relates to chemical processes useful in the manufacture of the compound 4-(6-chloro-2,3-methylenedioxyanilino)-7-[2-(4-methylpiperazin-1-yl)ethoxy]-5-tetrahydropyran-4-yloxyquinazoline (the active entity within AZD0530), to intermediates useful in the manufacture of that compound and to processes for the manufacture of those intermediates. The invention also relates to particular crystalline forms of that compound such as a difumarate salt and a trihydrate and to pharmaceutical compositions containing such crystalline forms. | 04-16-2009 |
Philip O'Keefe, Macclesfield GB
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20140364601 | PROCESS - Processes for the preparation of the compound of formula (II) and intermediate compounds for use in the processes. | 12-11-2014 |
Sam O'Keefe, Loughborough GB
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20100136259 | Cementitious Board Manufacture - A method of accelerating the setting reaction of calcium sulphate hemihydrate and water comprises the steps of mixing water and calcium sulphate hemihydrate to produce a slurry, adding an accelerator to said mixture, and applying ultrasonic energy to said mixture. Application of ultrasound to the plaster slurry accelerates crystallization and thus reduces the setting time. A further benefit is reduced density of the wall boards. | 06-03-2010 |
Sam O'Keefe, Leicestershire GB
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20100288415 | Gypsum Based Compositions - A gypsum stucco composition comprising the following components finely divided; calcium sulphate hemihydrate in calcined solid beta crystalline form; and in intimate mixture with said finely divided calcium sulphate hemihydrate and mixed therewith no later than calcination to form the hemihydrate, a sulphate salt comprising at least one of ammonium sulphate and aluminium sulphate, in an amount such that when the stucco composition is mixed with water and allowed to set, the resulting set plaster has increased compressive strength, flexural strength and/or E-modulus compared to a set plaster produced from said finely divided calcium sulphate hemihydrate containing no said sulphate salt. | 11-18-2010 |