Patent application number | Description | Published |
20110001553 | METHOD OF DRIVING REVERSE CONDUCTING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE - A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased. | 01-06-2011 |
20110201187 | IGBT AND METHOD FOR MANUFACTURING IGBT - A vertical IGBT includes a floating region of the first conductive type being formed within the body region of the second conductive type. A density of first conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to increase from an upper side to a lower side. A density of the first conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to decrease from an upper side to a lower side. A density of second conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to decrease from an upper side to a lower side. A density of the second conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to increase from an upper side to a lower side. | 08-18-2011 |
20120132955 | SEMICONDUCTOR DEVICE - A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region. | 05-31-2012 |
20130069694 | SEMICONDUCTOR DEVICE - A semiconductor device may be provided with a semiconductor substrate, an insulating film disposed on a surface of the semiconductor substrate, at least one electrode disposed on a surface of the insulating film, and a voltage applying circuit configured to apply a first voltage to the at least one electrode. The semiconductor substrate may be provided with a cell region and a non-cell region adjacent to the cell region. The cell region is provided with a semiconductor element, and the non-cell region is provided with a withstand voltage structure. The insulating film may be disposed on a surface of the non-cell region. The at least one electrode may be electrically insulated from the semiconductor substrate. The voltage applying circuit may apply the first voltage to the electrode during at least a part of a first period in which a second voltage is not applied to the semiconductor element. | 03-21-2013 |
20140048847 | DIODE, SEMICONDUCTOR DEVICE, AND MOSFET - Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction. | 02-20-2014 |
20140054645 | INSULATED-GATE BIPOLAR TRANSISTOR - In an IGBT, a trench extending in a bent shape to have a corner is formed in an upper surface of a semiconductor substrate. The inside of the trench is covered with an insulating film. A gate is placed inside the trench. An emitter and a collector are formed on an upper surface and a lower surface of the semiconductor substrate, respectively. An emitter region, a body region, a drift region, and a collector region are formed in the semiconductor substrate. The emitter region is formed of an n-type semiconductor, is in contact with the insulating film, and is in ohmic contact with the emitter electrode. The body region is formed of a p-type semiconductor, is in contact with the insulating film below the emitter region, is in contact with the insulating film of an inner corner portion of the trench, and is in ohmic contact with the emitter electrode. | 02-27-2014 |
20140231866 | IGBT AND METHOD OF MANUFACTURING THE SAME - An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region. | 08-21-2014 |
20140231867 | DIODE AND SEMICONDUCTOR DEVICE INCLUDING BUILT-IN DIODE - A diode is provided with a pillar region formed so as to extend between a barrier region and an anode electrode, contact the barrier region, and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region; and a barrier height adjusting region formed so as to be located between the pillar region and the anode electrode, and contact the pillar region and the anode electrode. The barrier height adjusting region includes at least one component selected from the group consisting of a second conductivity type semiconductor having a concentration lower than that of an anode region, the first conductivity type semiconductor having a concentration lower than that of the pillar region, and an i-type semiconductor. The barrier height adjusting region and the anode electrode are connected through a Schottky junction. | 08-21-2014 |
20140252408 | REVERSE CONDUCTING IGBT - A reverse conducting IGBT that includes an insulated gate; a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and an emitter electrode provided on a surface of the semiconductor layer. The first conductivity type drift region of the semiconductor layer contacts the insulated gate. The second conductivity type body region of the semiconductor layer is provided on the drift region and contacts the insulated gate. The first conductivity type emitter region of the semiconductor layer is provided on the body region and contacts the insulated gate. The second conductivity type intermediate region of the semiconductor layer is provided on the emitter region and is interposed between the emitter region and the emitter electrode. | 09-11-2014 |
20150084124 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate having an element region and a termination region. The element region includes a first body region having a first conductivity type, a first drift region having a second conductivity type, and first floating regions having the first conductivity type. The termination region includes FLR regions, a second drift region and second floating regions. The FLR regions have the first conductivity type and surrounds the element region. The second drift region has the second conductivity type, makes contact with and surrounds the FLR regions. The second floating regions have the first conductivity type and is surrounded by the second drift region. The second floating regions surround the element region. At least one of the second floating regions is placed at an element region side relative to the closest one of the FLR regions to the element region. | 03-26-2015 |
20160005843 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - By using an SOI substrate in which a front surface-side semiconductor layer, an insulating layer, and a back surface-side semiconductor layer are laminated in this order, vertical semiconductor devices are mass-produced. A process to be executed on a front surface of the SOI substrate is executed on the front surface. A back surface of the SOI substrate is etched so that the back surface-side semiconductor layer and the insulating layer are removed and a back surface of the front surface-side semiconductor layer is exposed. A process to be executed on the exposed back surface of the front surface-side semiconductor layer is executed on the back surface. A thickness of the front surface-side semiconductor layer of the SOI substrate can be accurately controlled, and the semiconductor devices having a semiconductor layer with the same thickness as the thickness of the front surface-side semiconductor layer are mass-produced. | 01-07-2016 |
20160035859 | IGBT AND METHOD OF MANUFACTURING THE SAME - An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region. | 02-04-2016 |
20160071841 | IGBT WITH A BUILT-IN-DIODE - When an IGBT has a barrier layer | 03-10-2016 |
Patent application number | Description | Published |
20090298142 | METHOD FOR PRODUCING A USEFUL SUBSTANCE BY USE OF AN IMMOBILIZED ENZYME - The present invention provides a method for producing a useful substance by supplying, to a fixed-bed reactor packed with an immobilized enzyme, a liquid mixture containing two liquid phases, in which the two liquid phases are allowed to flow in an identical, parallel direction, which method employs a fixed-bed reactor equipped with an insertion unit or tubes, so as to form a plurality of lumens in the fixed-bed reactor, each lumen having a cross section of a circular shape with a diameter of 100 mm or less or having a polygonal shape with a diagonal line of 100 mm or less, wherein the lumens are packed with an immobilized enzyme and the liquid mixture is supplied therethrough. In a reaction performed by passing a reaction mixture exhibiting two liquid phases through a fixed-bed reactor equipped with an immobilized enzyme, overall flow of the reaction liquid is made uniform, to thereby facilitate production of a useful substance in an efficient manner. | 12-03-2009 |
20100041114 | PROCESS FOR PRODUCING USEFUL SUBSTANCE WITH IMMOBILIZED ENZYME - The present invention relates to a process for producing a useful substance, which includes feeding a liquid mixture formed of two liquid phases into a fixed bed-type reaction column packed with an immobilized enzyme, and performing a reaction while allowing the liquid mixture to flow in the same direction in a co-current manner, wherein the fixed bed-type reaction column has partition plates inserted in the longitudinal direction of the fixed bed-type reaction column so as to form a plurality of tube-shaped structures, wherein each tube-shaped structure has a lateral cross-section which is circular or polygonal in shape with at least a part being unclosed and has a representative length of | 02-18-2010 |
20100047883 | PROCESS FOR PRODUCING USEFUL SUBSTANCE USING IMMOBILIZED ENZYME - The present invention relates to a process for producing a useful substance, the process including feeding a liquid mixture formed of two liquid phases into a fixed bed-type reaction column packed with an immobilized enzyme, and allowing the liquid mixture to flow in the same direction in a co-current manner to perform a reaction, wherein the packing thickness of the immobilized enzyme per stage of the fixed bed-type reaction column having an equivalent circular diameter of 35 mmφ or larger is 10 to 200 mm. | 02-25-2010 |
Patent application number | Description | Published |
20110301799 | ELECTRICITY STORAGE CONTROL DEVICE FOR HYBRID VEHICLE - An electricity storage control device for a hybrid vehicle that includes: an internal combustion engine; a battery that is charged by a power generator driven by the internal combustion engine; and a motor that is driven upon receiving an electric power from the battery, the hybrid vehicle conducting travel in an EV mode for traveling with only the motor, includes: a planned traveling distance setting unit that sets a planned traveling distance in the EV mode; and a residual control unit that calculates a traveling enable distance in the EV mode according to an electricity storage state of the battery and that, when the planned traveling distance is longer than the traveling enable distance, operates the internal combustion engine to cause the power generator to charge the battery so that amount of storage in the battery reaches amount of storage corresponding to the planned traveling distance. | 12-08-2011 |
20120101675 | MOTOR CONTROL APPARATUS FOR ELECTRIC VEHICLE - A motor control apparatus for an electric vehicle includes a first motor driving the front wheels of the electric vehicle and a second motor driving the rear wheels. A motor driving control distributes a demand torque to be demanded for the electric vehicle and controls the first and second motors; a determination unit counts time during which a driving torque distributed to one of the first and second motors is a reference torque, which is preset for the one of the first and second motors, or higher and determines whether the counted time is predetermined time or longer; and a driving torque distribution control unit that, when the counted time is the predetermined time or longer, reduces the driving torque distributed to one of the first and second motors to below the reference torque and increases a driving torque to the other. | 04-26-2012 |
20120191281 | ELECTRIC VEHICLE - An electric vehicle includes: a motor configured to be driven by electric power supplied from a battery; a limit control unit configured to calculate a limit rate for limiting a requested torque requested for the electric vehicle so that an induced voltage developed by the motor is equal to or lower than a voltage of the battery; a drive torque calculation unit configured to calculate a drive torque for traveling the electric vehicle based on the requested torque and the limit rate. | 07-26-2012 |
20130024061 | CONTROL UNIT FOR HYBRID VEHICLE - A control unit for a hybrid vehicle includes a switching device and a required output determination device. The switching device switches a driving mode of the hybrid vehicle between a motor driving mode in which the hybrid vehicle is driven by a motor, an engine driving mode in which the hybrid vehicle is driven by an engine and a hybrid driving mode in which the hybrid vehicle is driven by both of the motor and the engine. The required output determination device determines a required output based on an output characteristic in which an operation amount of an accelerator pedal and a drive output corresponding to the operation amount are related to each other. The output characteristic in the motor driving mode is such that an increase rate of the drive output is decreased as the operation amount is increased. | 01-24-2013 |
20130076124 | POWER SWITCHING APPARATUS - A power switching apparatus, configured to switch a power supply source that is configured to supply an electric power to an air conditioner that is mounted on a vehicle that can receive a power supply from a plurality of power sources, includes: a selecting unit configured to select the power supply source during execution of pre-air conditioning in which an operation of the air conditioner is started before start of running of the vehicle; and a setting unit configured to set a power supply to be supplied from the power supply source that is selected by the selecting unit, to the air conditioner. | 03-28-2013 |
20130261861 | VEHICLE HAVING POWER SUPPLY APPARATUS - A vehicle having a power supply apparatus which is configured to supply an electric power to an external apparatus outside the vehicle, includes: a detecting unit which is configured to detect a state where a cable is pinched between an opening and closing member of the vehicle and an opening edge of an opening for the opening and closing member, the cable connecting the power supply apparatus to the external apparatus and being arranged in an interior of the vehicle; and an inhibiting unit which, when the detecting unit detects that the cable is pinched between the opening and closing member and the opening edge, is configured to inhibit running of the vehicle. | 10-03-2013 |
20140195092 | CONTROL DEVICE FOR HYBRID VEHICLE - A switching vehicle speed determination section ( | 07-10-2014 |