Kyung-Hyun Kim
Kyung-Hyun Kim, Daejeon-City KR
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20080303018 | Silicon-Based Light Emitting Diode for Enhancing Light Extraction Efficiency and Method of Fabricating the Same - Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics. | 12-11-2008 |
20090032836 | SEMICONDUCTOR LIGHT EMITTING DIODE THAT USES SILICON NANO DOT AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that comprises a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer. | 02-05-2009 |
20090242913 | SILICON BASED LIGHT EMITTING DIODE - Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure. | 10-01-2009 |
20110018006 | MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE HAVING EMITTING LAYER INCLUDING SILICON NANO-DOT, SEMICONDUCTOR LIGHT-EMITTING DIODE ARRAY INCLUDING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE, AND METHOD OF FABRICATING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE - A micro-sized semiconductor light-emitting diode includes an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside. | 01-27-2011 |
Kyung-Hyun Kim, Gyeongju-Si KR
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20100279871 | OPTICALLY ACTIVE (R)-ARYLOXYPROPIONIC ACID AMIDES AND HERBICIDAL COMPOSITION COMPRISING SAME - The present invention relates to an optically active (R)-aryloxypropionic acid amide compound which has high selectivity and safety for protecting a crop such as rice, wheat, barley and soy bean, and exhibits excellent herbicidal activity against weeds, and a herbicidal composition comprising the same. | 11-04-2010 |
Kyung-Hyun Kim, Suseong-Gu KR
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20100166878 | COMPOSITION COMPRISING BEE VENOM FOR THE TREATMENT OF ATHEROSCLEROSIS - The present invention provides bee venom which can decrease expression levels of sclerotic factors, inflammatory factors and vascular adhesion factors associated with atherosclerosis, and a pharmaceutical composition comprising the bee venom as an active ingredient for the treatment of the atherosclerosis. When the bee venom was administered to laboratory animal models of atherosclerosis, the total cholesterol and neutral lipid were decreased, high-density cholesterol was maintained or even increased, the expression levels of TNF-α and IL-β as inflammation-associated cytokines were decreased in the blood, the expression levels of fibrosis-associated cytokines and vascular adhesion factors were decreased in the main artery and the heart, the plaque deposition generally caused by the atherosclerosis was decreased, and the expression levels of intercellular adhesion molecules (ICAM) and vascular cell adhesion molecules (VCAM), TGF-β1 and fibronectin as fibrosis-related cytokines were decreased. | 07-01-2010 |
Kyung-Hyun Kim, Gyeonggi-Do KR
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20090175328 | DECISION FEEDBACK EQUALIZER (DFE) CIRCUITS FOR USE IN A SEMICONDUCTOR MEMORY DEVICE AND INITIALIZING METHOD THEREOF - A DFE circuit for use in a semiconductor memory device and an initializing method thereof. In the method of initializing a DFE circuit used in a semiconductor memory device having a discontinuous data transmission, the DFE circuit may be used for changing a sampling reference level in response to a level of previous data and sampling transmission data. The method includes terminating a data channel having a transmission of the transmission data at a predefined termination level, and controlling a sampling start time point of the transmission data as a time point preceding a transmission time point of the transmission data by a predefined time. Further, an initialization may be performed of the previous data on the basis of initialization data obtained through a pre-sampling of the data channel at a sampling start time point of the transmission data, thereby obtaining an initialization of the DFE circuit and compensating for a feedback delay. | 07-09-2009 |
Kyung-Hyun Kim, Vancouver CA
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20090017839 | WIRELESS NETWORK WITH ENHANCED SECURITY BY REAL-TIME IDENTIFICATION OF A LOCATION OF A RECEIVED PACKET SOURCE - Methods, systems, and apparatuses for tracking client devices in a wireless communications network are provided. A bit sequence is received at three or more access points of the wireless communications network from a client device communicatively coupled to the wireless communications network. A physical location of the client device is determined based on a timing of receiving the bit sequence at the three or more access points. The determined physical location may be used to improve security with regard to the client device. If the determined physical location is outside of an acceptable area for the client device, the client device may be decoupled from the communications network and/or other security measures may be taken. In a further aspect, the client device may itself determine its physical location, and transmit an indication of its determined physical location in communication packets used to communicate with the network, for enhanced security. | 01-15-2009 |
Kyung-Hyun Kim, Suwon-Si KR
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20080307285 | MEMORY DEVICES AND SYSTEMS INCLUDING ERROR-CORRECTION CODING AND METHODS FOR ERROR-CORRECTION CODING - In one aspect, a memory device includes a memory cell array, parallel internal data paths which transmit internal data to and from the memory cell array, a data driver which transmits and receives external data, and a data buffer which delays and transfers the external data received by the data driver to the internal data paths, and which delays and transfers the internal data transmitted from the memory cell array to the data driver. The memory device further includes an error correction code generator which generates an error correction code (EC) based on the internal data transmitted on the internal data paths, an EC buffer which delays the error correction code generated by the error correction code generator, an EC driver which transmits the error correction codes delayed by the EC buffer, and a latency controller which variably controls a delay time of at least one of the data buffer and the EC buffer. | 12-11-2008 |
20130124941 | CYCLIC REDUNDANCY CHECK CODE GENERATING CIRCUIT, SEMICONDUCTOR MEMORY DEVICE, AMD METHOD OF DRIVING SEMICONDUCTOR MEMORY DEVICE - Disclosed are a semiconductor memory device, and a method of driving the same, and a cyclic redundancy check code generating circuit capable of performing cyclic redundancy check. A semiconductor memory device according to an aspect of the present invention includes a memory cell array, a data processing unit receiving data that is read from the memory cell array and selectively outputting at least some of the data according to ordering information, bit structure information, and burst length information, and a check code generating unit generating a cyclic redundancy check code to detect an error in the data being output, the check code generating unit generating and outputting the cyclic redundancy check code by using the read data, the ordering information, the bit structure information, and the burst length information. | 05-16-2013 |