Patent application number | Description | Published |
20090142877 | Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature - A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film arte annealed and therefore converted into an aluminum-silicon alloy film and a p | 06-04-2009 |
20090167146 | WHITE-LIGHT FLUORESCENT LAMP HAVING LUMINESCENCE LAYER WITH SILICON QUANTUM DOTS - A structure is formed by putting glass plates between a luminescence generating device and an electron emitting device so that a vacuum is formed in between. After in putting a high-voltage, an electron beam is emitted from the electron emitting device using low power. In the end, silicon quantum dots in the luminescence generating device are excited to generate a white light. The present invention has a good optoelectronic transformation efficiency. | 07-02-2009 |
20100101641 | SOLAR CELL COATING AND METHOD FOR MANUFACTURING THE SAME - A solar cell coating and a method for manufacturing the solar cell coating. The solar cell coating is formed by adding a low bandgap material, a semiconductor material and a conductive polymer to a solvent or performing high-temperature milling on a mixture formed by mixing a conductive polymer material, a low bandgap material and a semiconductor material so that the solar cell coating exhibits high capability in transporting carriers effectively to transmit the electrons and holes to respective electrodes rapidly. Since the low bandgap material exhibits a small bandgap, MEG takes place to generate a plurality of electro-hole pairs when a photon is absorbed by the low bandgap material. Besides, by mixing the three materials corresponding to different conductive and valence bands respectively, a ladder structure formed by the HOMO and the LUMO corresponding to the three materials respectively will assist effective and rapid carrier transport. | 04-29-2010 |
20100216266 | Pulsed high-voltage silicon quantum dot fluorescent lamp - In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light. | 08-26-2010 |
20100216274 | Tandem solar cell including an amorphous silicon carbide layer and a multi-crystalline silicon layer - A method for making a tandem solar cell includes the steps of providing a ceramic substrate, providing a titanium-based layer on the ceramic substrate, providing an n | 08-26-2010 |
20100216278 | Method for making multi-cystalline film of solar cell - A method is disclosed for making a multi-crystalline silicon film of a solar cell. In the method, a titanium-based film is coated on a ceramic substrate. A back surface field layer is coated on the titanium-based film via providing dichlorosilane and diborane in an atmospheric pressure chemical vapor deposition process at a first temperature. A light-soaking layer is coated on the back surface field layer via providing more dichlorosilane and diborane in the atmospheric pressure chemical vapor deposition process at a second temperature higher than the first temperature. | 08-26-2010 |
20100261305 | Method for making multi-cystalline film of solar cell - A method is disclosed to make a multi-crystalline silicon film of a solar cell. The method includes the step of providing a ceramic substrate, the step of providing a titanium-based film on the ceramic substrate, the step of providing a p | 10-14-2010 |
20100267223 | Method of Fabricating Thin Film Interface for Internal Light Reflection and Impurities Isolation - A high-quality epitaxial silicon thin layer is formed on an upgraded metallurgical grade silicon (UMG-Si) substrate. A thin film interface is fabricated between the UMG-Si substrate and the epitaxial silicon thin layer. The interface is capable of internal light reflection and impurities isolation. With the interface, photoelectrical conversion efficiency is improved. Thus, the present invention is fit to be applied for making solar cell having epitaxial silicon thin layer. | 10-21-2010 |
20100279029 | Method for coating nanometer particles - There is disclosed a method for coating nanometer metal particles. The step includes three steps. At the first step, a substrate is provided. At the second step, the substrate is coated with a metal layer. At the third step, the metal layer is annealed so that the metal layer is transformed into nanometer metal particles. | 11-04-2010 |
20100279453 | Method for making an anti-reflection film of a solar cell - A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p | 11-04-2010 |
20100279461 | Method of Fabricating Zinc Oxide Film Having Matching Crystal Orientation to Silicon Substrate - A zinc oxide (ZnO) film is fabricated. Metal-organic chemical vapor deposition (MOCVD) is used to obtain the film with few defects, high integrity and low cost through an easy procedure. The ZnO film above a silicon substrate has a matching crystal orientation to the substrate. Thus, the ZnO film is fit for ultraviolet light-emitting diodes (UV LED), solar cells and related laser devices. | 11-04-2010 |
20100279492 | Method of Fabricating Upgraded Metallurgical Grade Silicon by External Gettering Procedure - Upgraded metallurgical grade silicon (UMG-Si) is fabricated by a ‘green’ (environmental protected) external gettering procedure. Impurities concentration of the fabricated UMG-Si is reduced for 100 times than its source material. The UMG-Si obtained has a purity ratio reaching 4N to 6N. Thus, substrates made of the UMG-Si can be used in solar cells and related photoelectrical applications. | 11-04-2010 |
20100291322 | Method for making titanium-based compound film of poly silicon solar cell - A method is disclosed for making a titanium-based compound film of a poly-silicon solar cell. In the method, a ceramic substrate is made of aluminum oxide. The ceramic substrate is coated with a titanium film in an e-gun evaporation system. Dichlorosilane is provided on the titanium film by atmospheric pressure chemical vapor deposition. A titanium-based compound film is formed on the ceramic substrate. | 11-18-2010 |
20110003425 | Process for making multi-crystalline silicon thin-film solar cells - Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p | 01-06-2011 |
20110027931 | Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles - There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film. | 02-03-2011 |
20110027935 | Method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots - In a method for making a full-spectrum solar cell, there is provided an ordinary solar cell with an anti-reflection layer. The anti-reflection layer is coated with a film of silicon nitride and/or silicon oxide. The silicon/nitrogen ratio and/or the silicon/oxygen ratio and the temperature are regulated, thus forming a silicon-rich film via doping the anti-reflection layer with silicon from the film of silicon nitride and/or silicon oxide. The precipitation of the silicon in the silicon-rich film is executed based on a mechanism of phase separation, thus forming silicon quantum dots of various sizes in the anti-reflection layer. | 02-03-2011 |
20110171773 | Method for Making a Planar Concentrating Solar Cell Assembly with Silicon Quantum Dots - Disclosed is a method for making a silicon quantum dot planar concentrating solar cell. At first, silicon nitride or silicon oxide mixed with silicon quantum dots is provided on a transparent substrate. By piling, there is formed a planar optical waveguide for concentrating sunlit into a small dot cast on a small solar cell. | 07-14-2011 |
20120070938 | Method of Fabricating Silicon Nanowire Solar Cell Device Having Upgraded Metallurgical Grade Silicon Substrate - A simplified method for fabricating a solar cell device is provided. The solar cell device has silicon nanowires (SiNW) grown on an upgraded metallurgical grade (UMG) silicon (Si) substrate. Processes of textured surface process and anti-reflection thin film process can be left out for further saving costs on equipment and manufacture investment. Thus, a low-cost Si-based solar cell device can be easily fabricated for wide application. | 03-22-2012 |
20130071967 | Method for Making a Nickel Film for Use as an Electrode of an N-P Diode or Solar Cell - Disclosed is a method for making a nickel film for use as an electrode of an n-p diode or solar cell. A light source is used to irradiate an n-type surface of the n-p diode or solar cell, thus producing electron-hole pairs in the n-p diode or solar cell. For the electric field effect at an n-p interface, electrons drift to and therefore accumulate on the n-type surface. With a plating agent, the diode voltage is added to the chemical potential for electroless plating of nickel on the n-type surface. The nickel film can be used as a buffer layer between a contact electrode and the diode or solar cell. The nickel film reduces the contact resistance to prevent a reduced efficiency of the diode or solar cell that would otherwise be caused by diffusion of the atoms of the electrode in following electroplating. | 03-21-2013 |
20130084715 | Method of Fabricating Al2O3 Thin Film Layer | 04-04-2013 |
20130149843 | In-situ Gettering Method for Removing Metal Impurities from the Surface and Interior of a Upgraded Metallurgical Grade Silicon Wafer - An in-situ gettering method for removing impurities from the surface and interior of a upgraded metallurgical grade silicon wafer is continuously conducted in a reaction chamber. Chloride gas is mixed with carrier gas. The gaseous mixture is used to clean the surface of the silicon wafer. Then, the gaseous mixture is used to form a porous structure on the surface of the silicon wafer before hot annealing is executed. Finally, the gaseous mixture is used to execute hot etching on the surface of the silicon wafer and remove the porous structure from the surface of the silicon wafer. As the chloride gas is used to clean the surface of the silicon wafer and form the porous structure on the surface of the silicon wafer, external gettering is improved. Moreover, interstitial-type metal impurities are effectively removed from the interior of the silicon wafer. | 06-13-2013 |
20140038339 | PROCESS OF MANUFACTURING CRYSTALLINE SILICON SOLAR CELL - A process of manufacturing a crystalline silicon solar cell includes forming a rough surface on a surface of the crystalline silicon wafer and an Al | 02-06-2014 |