Patent application number | Description | Published |
20090133994 | CORD SWITCH - A cord switch includes a hollow insulation having a restoring force, a plurality of inner electrode wires provided along an inner surface of the hollow insulation, and an outer electrode provided on an outer surface of the hollow insulation. The outer electrode includes a plurality of outer electrode wires wounded on the outer surface of the hollow insulation, the outer electrode wires each including a copper wire and a plated layer formed on a surface of the copper wire, and the plated layer includes a transition metal except cobalt, manganese, copper, iron and vanadium, or a typical metal. | 05-28-2009 |
20090283297 | SUBMERSIBLE MOTOR ELECTRIC WIRE - A submersible motor electric wire includes a conductor including a copper wire and an enamel coating formed on the periphery of the copper wire, and an insulating sheath layer formed outside the conductor. The insulating sheath layer includes a silane graft polymer as a main constituent. The silane graft polymer is formed by a graft-polymerization that an unsaturated silane compound and an organic peroxide are added to polyethylene, and is cross-linked contacting with water in the presence of a siloxane condensation catalyst. Alternatively, the insulating sheath layer includes a composition including polyethylene as a main constituent, and the composition is cross-linked by being irradiated with an ionizing radiation. | 11-19-2009 |
20120312580 | SILANE-CROSSLINKED POLYOLEFIN INSULATED WIRE - A silane-crosslinked polyolefin insulated wire includes a conductor, and an insulating cover layer extruded on an outer periphery of the conductor. The insulating cover layer includes a silane-crosslinked polyolefin to be cross-linked by reacting water with a polyolefin having an alkoxysilyl group as a side chain. The insulating cover layer further includes a guanidine derivative having a boiling point of not less than 170° C. and a melting point of less than 190° C. in an environment at 760 mmHg as a crosslinking promoter to promote crosslinking of the polyolefin in an amount of not less than 0.05 parts by mass and not more than 0.5 parts by mass per 100 parts by mass of the polyolefin. | 12-13-2012 |
20120312581 | SILANE-CROSSLINKED POLYOLEFIN INSULATED WIRE - A silane-crosslinked polyolefin insulated wire includes a conductor, and an insulating cover layer extruded on an outer periphery of the conductor. The insulating cover layer includes a silane-crosslinked polyolefin to be crosslinked by reacting water with a polyolefin having an alkoxysilyl group as a side chain. The insulating cover layer further includes an amine compound having a boiling point of not less than an extrusion temperature in an environment at 760 mmHg as a crosslinking promoter to promote crosslinking of the polyolefin in an amount of not less than 0.03 parts by mass and not more than 0.5 parts by mass per 100 parts by mass of the polyolefin. | 12-13-2012 |
20130209803 | CROSSLINKED RUBBER, RUBBER-SHEATHED CABLE USING SAME, AND CROSSLINKED RUBBER PRODUCING METHOD - A crosslinked rubber is composed of rubber molecules, which, before crosslinking, contain hot dissociatable and cold associatable crosslinking groups to dissociate from each other in a hot state and associate together in a cold state, and silane crosslinking groups, and which, after molding, are silane-crosslinked together by a silanol condensation reaction of the silane crosslinking groups together with moisture, with the hot dissociatable and cold associatable crosslinking groups associated together. | 08-15-2013 |
Patent application number | Description | Published |
20080237851 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, COMPOSITE METAL BODY AND MANUFACTURING METHOD THEREOF - A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 μm and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode. | 10-02-2008 |
20090180914 | Interconnect material and interconnect formation method - A metal particle having an organic substance coated thereon, dispersibility that is the same as that of a known metal particle having an organic substance coated thereon, and an improved low temperature connectability. A method for forming interconnect between materials by using the interconnect materials that include a metal particle on which an organic substance is coated, which includes the steps of coating the interconnect materials on subject interconnect materials, and heating the materials at a temperature in the range of 50 to 400° C. for 1 sec to 10 min to form a sintered body made of metal between the subject interconnect materials. The organic substance is a secondary amine having a molecular weight of 250 or less, and the metal particle is made of a unit of silver, copper, or gold, which has a mean diameter of 100 nm or less, or a mixture thereof. | 07-16-2009 |
20090244868 | Semiconductor device and bonding material - The present invention is directed to enhancing the bonding reliability of a bonding portion between an Al electrode of a semiconductor device and a bonding material having metal particles as a main bonding agent. In the semiconductor device, a semiconductor element and an Al electrode are connected to each other with a bonding layer made of Ag or Cu interposed therebetween, and the bonding layer and the Al electrode are bonded to each other with an amorphous layer interposed therebetween. It is possible to obtain excellent bonding strength to the Al electrode by performing a bonding process in atmospheric air by using a bonding material including a metal oxide particle with an average diameter of 1 nm to 50 μm, an acetic acid- or formic acid-based compound, and a reducing agent made of an organic material. | 10-01-2009 |
20100195292 | ELECTRONIC MEMBER, ELECTRONIC PART AND MANUFACTURING METHOD THEREFOR - When silver oxide is reduced to silver, a large number of cores of metallic silver are formed inside the silver oxide. Then, the silver oxide is reduced in a manner of being hollowed out while its original outer configuration is being maintained. As a result, the curvature of the silver generated becomes larger. The utilization of this microscopic-particle implementation mechanism allows accomplishment of the bonding even if the silver oxide is supplied not in a particle-like configuration, but in a closely-packed layer-like configuration. In the present invention, there is provided an electronic member including an electrode for inputting/outputting an electrical signal, or a connection terminal for establishing a connection with the electrical signal, wherein the uppermost surface of the electrode or the connection terminal is a silver-oxide layer. | 08-05-2010 |
20110012262 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device wherein a semiconductor element made of Si or Si group material mounted on a substrate, the semiconductor element is mounted on the substrate and the semiconductor element is bonded to a silver bonding material via a oxide film formed on the semiconductor element. The bonding material comprising silver oxide particles having an average particle size of 1 nm to 50 nm and an organic reducing agent is used for bonding in air, which gives a high bonding strength to the oxide on the semiconductor element. | 01-20-2011 |
20110156225 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device achieving both electromagnetic wave shielding property and reliability in a heating process upon mounting electronic components. In the semiconductor device, mount devices | 06-30-2011 |
20110204125 | LOW TEMPERATURE BONDING MATERIAL AND BONDING METHOD - A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 μm, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material. | 08-25-2011 |
20120104618 | LOW TEMPERATURE BONDING MATERIAL AND BONDING METHOD - A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 μm, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material. | 05-03-2012 |
20130119322 | CONDUCTIVE SINTERED LAYER FORMING COMPOSITION - There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 μm as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 μm and the silver oxide particles. | 05-16-2013 |