Patent application number | Description | Published |
20080227256 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A MOS type SiC semiconductor device having high reliability and a longer lifespan against TDDB of a gate oxide film is disclosed. The semiconductor device includes a MOS (metal-oxide-semiconductor) structure having a silicon carbide (SiC) substrate, a polycrystalline Si gate electrode, a gate oxide film interposed between the SiC substrate and the polycrystalline Si gate electrode and formed by thermally oxidizing a surface of the SiC substrate, and an ohmic contact electrically contacted with the SiC substrate. The semiconductor device further includes a polycrystalline Si thermally-oxidized film formed by oxidizing a surface of the polycrystalline Si gate electrode. The gate oxide film has a thickness of 20 nm or less, preferably 15 nm or less. | 09-18-2008 |
20090289355 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE - A semiconductor manufacturing apparatus which performs a rapid heat treatment in which metallic thin films | 11-26-2009 |
20100276703 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A MOS type SiC semiconductor device having high reliability and a longer lifespan against TDDB of a gate oxide film is disclosed. The semiconductor device includes a MOS (metal-oxide-semiconductor) structure having a silicon carbide (SiC) substrate, a polycrystalline Si gate electrode, a gate oxide film interposed between the SiC substrate and the polycrystalline Si gate electrode and formed by thermally oxidizing a surface of the SiC substrate, and an ohmic contact electrically contacted with the SiC substrate. The semiconductor device further includes a polycrystalline Si thermally-oxidized film formed by oxidizing a surface of the polycrystalline Si gate electrode. The gate oxide film has a thickness of 20 nm or less, preferably 15 nm or less. | 11-04-2010 |
20120064731 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A silicon carbide semiconductor device ( | 03-15-2012 |
20130309859 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A silicon carbide semiconductor device ( | 11-21-2013 |
20130309877 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A silicon carbide semiconductor device ( | 11-21-2013 |
20140091324 | SWITCHING CIRCUIT AND SEMICONDUCTOR MODULE - A switching circuit includes: a first switching element (Q | 04-03-2014 |
20140159225 | SEMICONDUCTOR MODULE - A semiconductor module has a pair of semiconductor devices, a heat sink, a first electrode, an output electrode and a second electrode. The semiconductor devices are connected in series with each other and have first terminals that are electrically connected to a first power system and a second terminal that is electrically connected to a second power system. The first electrode is electrically connected both to one of the first terminal and to an electrode of one of the semiconductor devices. The output electrode is electrically connected both to the second terminal and to an electrode of the other of the semiconductor device. The second electrode is electrically connected to the other of the first terminals. The second electrode is connected to the heat sink via a first insulating member. The output electrode is connected to the second electrode via a second insulating member. | 06-12-2014 |
20140191250 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder chip having a smaller shape than that of the semiconductor element; disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load to the ZnAl solder chip such that the ZnAl solder chip melts to form a ZnAl solder layer; and reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer. | 07-10-2014 |
20150041525 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, HEAT INSULATING LOAD JIG, AND METHOD FOR SETTING UP HEAT INSULATING LOAD JIG - In a heat insulating load jig | 02-12-2015 |
Patent application number | Description | Published |
20080204802 | COMMUNICATION APPARATUS - A communication apparatus includes: a receiving unit which receives reception data transmitted from an external apparatus; an acquiring unit which acquires identification information for identifying the external apparatus which transmits the reception data; and a tag writer which wirelessly write the identification information into a wireless tag. | 08-28-2008 |
20090245144 | IP TELEPHONE TERMINAL - In an IP telephone terminal, a function implementation controlling unit is configured so as to be capable of controlling implementation of a function instructed by a file received via IP telephone communications when the communicating unit receives the file. The configuration data storing unit stores configuration data that is used by the function implementation controlling unit to implement the function. The configuration data acquisition controlling unit performs control to acquire configuration data from the configuration data storing unit when a communicating unit receives a read file that is transmitted from an external IP telephone terminal. The response file generation controlling unit performs control to generate a response file including the configuration data. The response file transmission controlling unit controls a communicating unit to transmit the response file to the external IP telephone terminal that has transmitted the read file. The update controlling unit performs, when the communicating unit receives a write file, control to update the configuration data based on the write file that is transmitted from the external IP telephone terminal that has received the response file. | 10-01-2009 |
20120081752 | IMAGE FORMING APPARATUS - An image forming apparatus is provided, including an image forming mechanism which executes a printing process; an object data memory which stores image data as an object of the printing process when a printing instruction is received; a re-formation condition memory which stores a type of a printing function and whether or not image data is an object of image re-formation in con'elation with each other; an object judging mechanism which judges whether or not the image data as a source of the image formation is the object of the image re-formation; and a data deleting mechanism which deletes the image data as the source of the image formation from the object data memory if the image data as the source of the image formation is not the object of the image re-formation. | 04-05-2012 |
20150085312 | IMAGE PROCESSING APPARATUS - An image processing apparatus for switching its state between a first state and a second state includes: a processing unit; a communicator for communicating with a mobile terminal; a storage storing a terminal identifier, first orientation information, and second orientation information; and a controller. The controller successively receives orientation information indicating an orientation of the mobile terminal from the mobile terminal through the communicator. When the controller successively receives the first orientation information and the second orientation information from the mobile terminal identified by the terminal identifier, the controller switches the state of the image processing apparatus from one of the first state and the second state to another of the first state and the second state. | 03-26-2015 |