Patent application number | Description | Published |
20100006423 | MAGNETIC FIELD GENERATION CONTROL UNIT AND MAGNETRON SPUTTERING APPARATUS AND METHOD USING THE SAME - A magnetic field generation control unit and a magnetron sputtering apparatus and method using the magnetic field generation control circuit. The magnetic field generation control unit includes a magnetic field generator for providing a specific magnetic field to a target consisting of a metal material to be deposited on a substrate, and a magnetic field generator control module electrically connected with the magnetic field generator, receiving an electrical signal from outside, and selectively supplying a current capable of generating the magnetic field to the magnetic field generator. The target is prevented from being magnetized when a sputtering process is not performed, and the magnetic field is generated from the target when the process is performed. Consequently, it is possible to perform uniform deposition on the substrate. | 01-14-2010 |
20100006424 | MAGNETRON UNIT MOVING APPARATUS FOR PREVENTING MAGNETIZATION AND MAGNETRON SPUTTERING EQUIPMENT HAVING THE SAME - A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed. | 01-14-2010 |
20100040991 | IN-LINE ANNEALING APPARATUS AND METHOD OF ANNEALING SUBSTRATE USING THE SAME - An in-line annealing apparatus and a method of annealing a substrate using the in-line annealing apparatus in which a plurality of heating devices provide a transportation path of a substrate and heat the substrate transported along the transportation path to a crystallization temperature, and an instantaneous high-temperature annealing unit heats the substrate positioned in the transportation path between the heating devices to a instantaneous annealing temperature. The in-line annealing apparatus and the method of annealing a substrate using the same provide a highly efficient annealing process that can be performed at various temperatures including a high temperature of 700° C. or higher. | 02-18-2010 |
20100224883 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode. | 09-09-2010 |
20100227060 | ATOMIC LAYER DEPOSITION APPARATUS AND METHOD OF FABRICATING ATOMIC LAYER USING THE SAME - An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit. | 09-09-2010 |
20100227443 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER - A method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal. The resultant polycrystalline silicon layer has an improved charge mobility. | 09-09-2010 |
20100227458 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER AND ATOMIC LAYER DEPOSITION APPARATUS USED FOR THE SAME - A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer. | 09-09-2010 |
20100263594 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat. | 10-21-2010 |
20110008540 | CANISTER FOR DEPOSITION APPARATUS, AND DEPOSITION APPARATUS AND METHOD USING THE SAME - A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage. | 01-13-2011 |
20110041767 | METAL CAPTURING APPARATUS AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME - A metal capturing apparatus and an atomic layer deposition apparatus, which are capable of discharging an exhaust gas from a process chamber, in which a metal atomic layer is deposited on a substrate using a reaction gas containing a metal catalyst, without a scrubber, and easily reusing the metal catalyst contained in the exhaust gas. The metal capturing apparatus includes a capturing chamber having a capturing space, a capturing plate disposed at one side of the capturing chamber and partially inserted into the capturing chamber, a refrigerant source feeding a refrigerant cooling the capturing plate, and an attachment unit attaching the capturing plate to the capturing chamber. The atomic layer deposition apparatus includes a process chamber, a vacuum pump connected to an exhaust port of the process chamber, and a metal capturing apparatus disposed between the process chamber and the vacuum pump. | 02-24-2011 |
20110070360 | SOURCE GAS SUPPLY UNIT, AND DEPOSITION APPARATUS AND METHOD USING THE SAME - Provided are a source gas supply unit capable of supplying a constant amount of source gas to a deposition chamber to deposit a uniform layer, and a deposition apparatus and method using the same. The source gas supply unit includes a canister in which a source is stored, a heater heating the canister, a source gas supply pipe provided on one side of the canister, a measuring unit installed on the source gas supply pipe and measuring an amount of source gas passing through the source gas supply pipe, and a temperature controller connected to the heater and the measuring unit. The temperature controller controls the heater based on the amount of the source gas measured by the measuring unit. | 03-24-2011 |
20110083960 | SPUTTERING APPARATUS - A sputtering apparatus that is capable of uniformly depositing an ultra-low concentration metal catalyst on a substrate having an amorphous silicon layer in order to crystallize the amorphous silicon layer. The sputtering apparatus includes a process chamber, a metal target located inside the process chamber, a substrate holder located opposite the metal target, and a vacuum pump connected with an exhaust pipe of the process chamber. An area of the metal target is more than 1.3 times an area of a substrate placed on the substrate holder. | 04-14-2011 |
20110100973 | APPARATUS FOR THERMALLY PROCESSING SUBSTRATE - An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates. | 05-05-2011 |
20110107970 | HEATING UNIT AND SUBSTRATE PROCESSING APPARATUS HAVING THE SAME - A substrate processing apparatus includes a heating unit that heats a processing chamber that processes a plurality of substrates and that quickly cools the processing chamber after the processing. The heating unit includes a body having an intake port and an exhaust port, one or more heaters located inside the body, a cooler connected to the intake port of the body, an exhaust pump connected to the exhaust port of the body, and a controller controlling the cooler. The substrate processing apparatus includes a boat in which a plurality of substrates are stacked, a processing chamber providing a space in which the substrates are processed, a transfer unit carrying the boat into or out of the processing chamber, and the heating unit located outside the processing chamber. | 05-12-2011 |
20110114963 | Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same - A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region. | 05-19-2011 |
20110120859 | SPUTTERING APPARATUS - Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm. | 05-26-2011 |
20110139612 | Sputtering apparatus - A sputtering apparatus includes a process chamber having first and second regions, a metal target inside the process chamber, a target transfer unit inside the process chamber, the target transfer unit being configured to move the metal target between the first and second regions, a substrate holder in the second region of the process chamber, and a magnetic assembly in the first region of the process chamber, the magnetic assembly being interposed between the target transfer unit and a wall of the process chamber. | 06-16-2011 |
20110151599 | Vapor deposition apparatus having improved carrier gas supplying structure and method of manufacturing an organic light emitting display apparatus by using the vapor deposition apparatus - A vapor deposition apparatus includes a canister configured to contain a vapor deposition source, the canister including a gas inlet and a gas outlet opposite to each other, a heater configured to heat the canister, a chamber in fluid communication with the canister, the chamber being configured to contain a vapor deposition target, and a carrier gas supplying unit configured to supply a carrier gas into the canister. | 06-23-2011 |
20110263107 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER AND ATOMIC LAYER DEPOSITION APPARATUS USED FOR THE SAME - A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer. | 10-27-2011 |
20120000425 | Apparatus for Processing Substrate - A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe. | 01-05-2012 |
20120000986 | CANISTER FOR DEPOSITION APPARATUS AND DEPOSITION APPARATUS USING SAME - A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body. | 01-05-2012 |
20120100644 | ORGANIC LAYER DEPOSITION APPARATUS, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING THE SAME - An organic layer deposition apparatus including an electrostatic chuck combined with a substrate so as to fixedly support the substrate. The organic layer deposition apparatus including a receiving surface that has a set curvature for receiving the substrate; a deposition source for discharging a deposition material toward the substrate; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; and a patterning slit sheet disposed to face the deposition source nozzle unit, and having a plurality of patterning slits arranged in a second direction perpendicular to the first direction, wherein a cross section of the patterning slit sheet on a plane formed by lines extending in the second direction and a third direction is bent by a set degree, wherein the third direction is perpendicular to the first and second directions. | 04-26-2012 |
20120302414 | RUBBING APPARATUS - A rubbing apparatus including a rubbing roller including an opening portion at a region of a circumferential surface of the rubbing roller, an outlet portion connected to the opening portion and open to an outside of the rubbing roller, and a groove portion connected to the opening portion and penetrating into the rubbing roller along the opening portion; and a rubbing cloth substantially surrounding the circumferential surface of the rubbing roller. | 11-29-2012 |
20120305921 | THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME - A thin film transistor may include a substrate, a buffer layer on the substrate, a semiconductor layer formed on the buffer layer, a gate insulating pattern on the semiconductor layer, a gate electrode on the gate insulating pattern, an interlayer insulating layer covering the gate electrode and the gate insulating pattern, the interlayer insulating layer having a contact hole and an opening extending therethrough, the contact hole exposing a source area and a drain area of the semiconductor layer, and the opening exposing a channel area of the semiconductor layer, and a source electrode and a drain electrode formed on the interlayer insulating layer, the source electrode being connected with the source area and the drain electrode being connected with the drain area of the semiconductor layer. | 12-06-2012 |
20120326174 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an organic light-emitting display device includes forming a gate electrode including a lower gate electrode on a gate insulating layer and an upper gate electrode on the lower gate electrode; forming a source region and a drain region at a semiconductor active layer using the gate electrode as a mask; forming an interlayer insulating layer on a substrate and etching the interlayer insulating layer, resulting in contact holes that expose portions of the source region and the drain region; forming a source/drain electrode raw material on the substrate and etching the source/drain electrode raw material to form a source electrode and a drain electrode; forming a gold overlapped lightly doped drain (GOLDD) structure having a LDD region at the semiconductor active layer by injecting impurity ions; depositing a protective layer on the substrate; and forming a display device on the substrate. | 12-27-2012 |
20130023179 | DONOR SUBSTRATE, METHOD OF MANUFACTURING A DONOR SUBSTRATE AND A METHOD OF MANUFACTURING AN ORGANIC LIGHT EMITTING DISPLAY DEVICE USING A DONOR SUBSTRATE - A donor substrate may include a base substrate, a light-to-heat conversion layer, a transfer layer, and a rib structure. The light-to-heat conversion layer may be on the base substrate. The transfer layer may be on the light-to-heat conversion layer. The rib structure is on the transfer layer. The rib structure may include a plurality of tubes spaced apart from one another. In a laser induced thermal imaging process, the donor substrate including the rib structure may be easily removed from a display substrate without damage, thereby to form an organic layer pattern regularly on the display substrate. | 01-24-2013 |
20130081700 | SOURCE GAS SUPPLY UNIT, AND DEPOSITION APPARATUS AND METHOD USING THE SAME - Provided are a source gas supply unit capable of supplying a constant amount of source gas to a deposition chamber to deposit a uniform layer, and a deposition apparatus and method using the same. The source gas supply unit includes a canister in which a source is stored, a heater heating the canister, a source gas supply pipe provided on one side of the canister, a measuring unit installed on the source gas supply pipe and measuring an amount of source gas passing through the source gas supply pipe, and a temperature controller connected to the heater and the measuring unit. The temperature controller controls the heater based on the amount of the source gas measured by the measuring unit. | 04-04-2013 |
20130146938 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An exemplary embodiment described technology relates generally to an organic light emitting diode (OLED) display and a manufacturing method thereof. The organic light emitting diode (OLED) display according to an exemplary embodiment includes: a substrate; an encapsulation member; an organic light emitting element between the substrate and the encapsulation member; a middle sealing member including one side disposed between the substrate and the encapsulation member and another side extended from the one side to be bent and enclosing an edge of the encapsulation member; a first sealant sealing and combining the one side of the middle sealing member and the substrate to each other; a second sealant sealing and combining the other side of the middle sealing member and the encapsulation member to each other; and a getter at the one side of the middle sealing member and the encapsulation member. | 06-13-2013 |
20140042402 | ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES - An organic light emitting display device may include a first substrate, a first electrode disposed on the first substrate, a pixel defining layer disposed on the first electrode and the first substrate, an organic light emitting structure disposed on the first electrode, a second electrode disposed on the organic light emitting structure and the pixel defining layer, a second substrate disposed on the second electrode, etc. The pixel defining layer may include a fine uneven structure positioned in the display and the non-display regions. The organic light emitting structure may be substantially uniformly formed on the first electrode through the pixel defining layer having the fine uneven structure, so that an organic light emitting display device may exhibit increased lifetime and may show improved image quality. | 02-13-2014 |
20140291632 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention includes: forming a first electrode on a substrate; forming an insulation layer on the first electrode; etching the insulation layer to expose the first electrode so as to form a pixel defining layer having the same height as the first electrode; forming an organic layer including one or more emission layers on the first electrode of a sub-pixel region defined by the pixel defining layer by applying a laser-induced thermal imaging (LITI) method; and forming a second electrode on the organic layer. | 10-02-2014 |
20140308445 | CANISTER FOR DEPOSITION APPARATUS, AND DEPOSITION APPARATUS AND METHOD USING THE SAME - A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage. | 10-16-2014 |
20140313242 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF DRIVING THE SAME - A controller for a display panel may include a first supply circuit to output first and second driving voltages to a sub-pixel of a first color; and a second supply circuit to output third and fourth driving voltages to a sub-pixel of a second color. The first driving voltage may be greater than the second driving voltage, and the third driving voltage may be greater than the fourth driving voltage. Also, at least three of the first, second, third, and fourth driving voltages may be different from one another. | 10-23-2014 |
20140347402 | DISPLAY DEVICE AND DISPLAY DEVICE DRIVING METHOD - A display device includes a display unit including pixels, each of which emits light according to data voltages, respectively; and a timing controller which divides an area of the display unit into an upper, center and bottom portions, divides one frame time into light emission sub-frames of a light emission period and a blank sub-frame of a blank period in which is supplied a black data signal, divides the upper, center and the bottom portions into groups, differentiates a scan start time of a light emission sub-frame and a scan start time of the blank sub-frame of each group, and increases the light emission period and decreases the blank period in proportional to an increase ratio of the light emission period as a group is closer to a middle of the center portion. | 11-27-2014 |
20140363936 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode. | 12-11-2014 |
20150015467 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - A display device includes: a unit pixel including subpixels electrically connected to first power voltages and a second power voltage, where the first power voltages include a first first power voltage and a second first power voltage, and where the subpixels include: a first subpixel electrically connected to the first first power voltage and the second power voltage; a second subpixel electrically connected to the second first power voltage and the second power voltage; and a third subpixel electrically connected to the second first power voltage and the second power voltage, where the first power voltage is a voltage having substantially a same level as a voltage, with which the first subpixel emits light at maximum luminance, and the second power voltage is a voltage having substantially a same level as a voltage, with which the second subpixel or the third subpixel emits light at maximum luminance. | 01-15-2015 |
20150015563 | PIXEL CIRCUIT, DISPLAY DEVICE USING THE SAME, AND DISPLAY DEVICE DRIVING METHOD - A pixel circuit includes: an organic light emitting diode (“OLED”); a threshold circuit which generates an output signal based on an input signal, where the threshold circuit has a hysteresis characteristic with respect to the input signal; a first transistor including a first electrode connected to a data line, a second electrode connected to an input terminal of the threshold circuit, and a gate electrode connected to a scan line; and a second transistor including a first electrode connected to a first power, a second electrode connected to an anode of the organic light emitting diode, and a gate electrode connected to an output terminal of the threshold circuit, where the second transistor controls a current amount that flows to the organic light emitting diode from the first power based on the output signal of the threshold circuit. | 01-15-2015 |
20150054718 | PIXEL CIRCUIT AND DISPLAY DEVICE USING THE SAME - Exemplary embodiments of the present invention relates to a pixel circuit for displaying an image of uniform luminance. The pixel circuit comprising an organic light emitting diode (OLED), an RS trigger comprising a first terminal connected to a scan line, a second terminal connected to an enable line, and a third terminal connected to a data line, the RS trigger configured to generate an output signal according to an enable signal, a data signal, and a scan signal respectively received via the enable line, the data line, and the scan line, and a driving transistor comprising a first electrode connected to a first power source, a second electrode connected to an anode of the OLED, and a gate electrode connected to an output terminal of the RS trigger, the driver transistor configured to control a current flowing through the OLED in response to the output signal of the RS trigger. | 02-26-2015 |
20150054862 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - A display device includes a timing controller for controlling the display of an image. The timing controller forms a frame for an image signal based on a main frame, a compensation frame, and at least one blank frame. The timing controller also determines a driving method for the display pixels to generate output image data. The main frame serves to display the image signal. The compensation frame serves to compensate luminance of the main frame. The blank frame serves to express a black gray scale value. | 02-26-2015 |