Patent application number | Description | Published |
20090184307 | PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge | 07-23-2009 |
20100258780 | PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured. | 10-14-2010 |
20100326358 | BATCH TYPE ATOMIC LAYER DEPOSITION APPARATUS - Provided is a batch-type Atomic Layer Deposition (ALD) apparatus for performing ALD processing collectively for a plurality of substrates, leading to an improved throughput, and achieving perfect uniformity of ALD on the substrates. The batch-type ALD apparatus includes: a chamber that can be kept in a vacuum state; a substrate support member, disposed in the chamber, supporting a plurality of substrates to be stacked one onto another with a predetermined pitch; a substrate movement device moving the substrate support member upward or downward; a gas spray device continuously spraying a gas in a direction parallel to the extending direction of each of the substrates stacked in the substrate support member; and a gas discharge device, disposed in an opposite side of the chamber to the gas spray device, sucking and evacuating the gas sprayed from the gas spray device. | 12-30-2010 |
20140165910 | APPARATUS FOR LARGE-AREA ATOMIC LAYER DEPOSITION - Disclosed is an apparatus for batch-type large-area atomic layer deposition, which can perform an atomic layer deposition process on a plurality of large-area glass substrates. The apparatus comprises: a vacuum chamber; gate valves provided at both sides of the vacuum chamber; a process gas supply unit provided in the upper portion of the vacuum chamber and configured to inject laminar-flow process gas downward; a gas discharge unit provided in the lower portion of the vacuum chamber and configured to discharge gas from the vacuum chamber; a cassette configured to load a plurality of substrates and disposed between the process gas supply unit and the gas discharge unit; and an elevating unit provided at the side of the gas discharge unit in the vacuum chamber and configured in the vacuum chamber to elevate the cassette so as to bring the cassette into close contact with the process gas supply unit. | 06-19-2014 |
20140318456 | HORIZONTAL-TYPE ATOMIC LAYER DEPOSITION APPARATUS FOR LARGE-AREA SUBSTRATES - Disclosed is a horizontal-type atomic layer deposition apparatus for large-area substrates, in which a plurality of large-area substrates can be simultaneously subjected to an atomic layer deposition process in a state in which they are stacked in a horizontal position. The apparatus comprises: an outer chamber that is maintained in a vacuum state; an inner chamber provided in the outer chamber; a chamber cover configured to move upward and downward to open and close the bottom of the inner chamber; a cassette configured to move upward and downward with the chamber cover; a process gas injecting portion configured to inject a process gas into a space between a plurality of substrates loaded in the cassette; a gas discharge portion configured to suck and discharge the process gas; and a substrate introducing/discharging means configured to introduce the substrates into the outer chamber and discharge the substrates. | 10-30-2014 |
Patent application number | Description | Published |
20120304297 | DETECTING MALICIOUS DEVICE - A wireless access point and a method may be provided for detecting a malicious device in a network. The wireless access point may include a controller, a search unit, a message generation unit, and a determination unit. The controller may be configured to initiate a malicious device detection mode regularly at predefined intervals. The search unit may be configured to detect candidate devices broadcasting a signal with the first SSID from neighbor devices in an associated network. The message generation unit may be configured to generate a test message in the malicious device detection mode and transmit the test message to the candidate devices. The determination unit may be configured to determine a corresponding device in the candidate device as a malicious device when a test response message is not received from the corresponding device in response to the test message. | 11-29-2012 |
20130303182 | CALL ADMISSION CONTROL - The disclosure is related to a method of adaptive call admission control in a base station. When a call access request is received from a user equipment determination may be made as to whether an available call admission capacity of the base station reaches a first limit. When the available call admission capacity of the base station reaches the first limit determination may be made as to whether the received call access request is for a preferred call. Then, determination may be made as to whether a reserved call admission capacity reaches a second limit when the received call access request is for the preferred call. When the reserved call admission capacity has not reached a second limit, access of the user equipment associated with the received call access request may be allowed. | 11-14-2013 |
20150087326 | CALL ADMISSION CONTROL - The disclosure is related to a method of adaptive call admission control in a base station. When a call access request is received from a user equipment determination may be made as to whether an available call admission capacity of the base station reaches a first limit. When the available call admission capacity of the base station reaches the first limit determination may be made as to whether the received call access request is for a preferred call. Then, determination may be made as to whether a reserved call admission capacity reaches a second limit when the received call access request is for the preferred call. When the reserved call admission capacity has not reached a second limit, access of the user equipment associated with the received call access request may be allowed. | 03-26-2015 |