Hsiao-Han
Hsiao-Han Chen, Cyonglin Township TW
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20100254057 | OVERLOAD POWER CUT-OFF DEVICE AND METHOD THEREOF - An overload power cut-off device is provided in an electric auxiliary system for avoiding overload in the system. The device includes a current detecting unit, a voltage comparing unit, an alarm unit, and a power cut-off unit. The current detecting unit includes a sensor coupled to the loop of the system for detecting a loop current of the system so as to output a sensing signal corresponding to the loop current. The voltage comparing unit compares the voltage value of the sensing signal with a preset voltage value and a voltage value of a rated current for respectively outputting a first driving signal and a second driving signal. The alarm unit receives the first driving signal to generate an alarm signal. The power cut-off unit receives the second driving signal to output a power cut-off signal for cutting off the power supply loop of the electric auxiliary system. | 10-07-2010 |
Hsiao-Han Chen, Tainan City TW
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20140358551 | Speech Aid System - A speech aid system includes a tube for mounting at a tracheostomy of a user, a voice parameter acquiring device mounted to the tube and generating a voice parameter signal according to airflow applied within the tube resulting from attempt by the user to speak, a processor generating an audio signal corresponding to the voice parameter signal, and a sound generator for mounting in an oral cavity of the user. The sound generator produces a substitute glottal sound corresponding to the audio signal. | 12-04-2014 |
Hsiao-Han Lin, Taipei City TW
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20120269853 | ATTENUATED DENGUE VIRUS VACCINE CONTAINING ADAPTIVE MUTATION FROM MRC-5 CELLS - The present invention relates to an attenuated dengue virus vaccine. In present invention, target mutagenesis at Glu | 10-25-2012 |
Hsiao-Han Liu, Gongguan Township TW
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20130228778 | Methods of Extracting Fin Heights and Overlap Capacitance and Structures for Performing the Same - A first test structure includes a first isolation region, a first gate electrode over the first isolation region, a first and a second semiconductor fin, and a first contact plug over the first and the second semiconductor fins. A second test structure includes a second isolation region, a second gate electrode over the second isolation region, a third semiconductor fin and a dielectric fin, and a second contact plug over the third semiconductor fin. The first, the second, and the third semiconductor fins and the dielectric fin have substantially a same fin height. A method includes measuring a first capacitance between the first gate electrode and the first contact plug, measuring a second capacitance between the second gate electrode and the second contact plug, and calculating the same fin height from a capacitance difference between the second capacitance and the first capacitance. | 09-05-2013 |