Patent application number | Description | Published |
20100138861 | MOBILE TERMINAL AND METHOD OF PURCHASING BROADCAST PRODUCT THEREIN - A mobile terminal including a wireless communication unit configured to receive broadcast content information, a display unit configured to display the received broadcast content information, an input unit configured to generate a selection signal indicating a selection of a broadcast product included in the displayed broadcast content information, a memory unit configured to store user-specific personal information, and a controller configured to extract broadcast product subscription information about the selected broadcast product from the broadcast content information, to extract user-specific personal purchase information for purchasing the broadcast product from the user-specific personal information stored in the memory unit of the mobile terminal, to create a message including the extracted broadcast product subscription information and the extracted user-specific personal information, and to control the wireless communication unit to transmit the created message using a messaging service to a server so as to make a request for a purchase of the selected broadcast product. | 06-03-2010 |
20110207442 | MOBILE TERMINAL AND CONTROLLING METHOD THEREOF - A mobile terminal and controlling method thereof are disclosed, which facilitates a terminal to be used in further consideration of user's convenience. According to at least one of embodiments of the present invention, the present invention includes receiving a transport stream from a broadcasting network, accessing a mobile communication network or a the broadcasting network to receive a broadcast service guide, if a broadcast service guide is receivable, receiving and displaying the broadcast service guide, and if the broadcast service guide is not receivable, extracting broadcast control information from the transport stream, obtaining broadcast service identity information on a broadcast service provided by the broadcasting network from the extracted broadcast control information, and then displaying the obtained broadcast service identity information. | 08-25-2011 |
20110252445 | MOBILE TERMINAL AND RELATED CONTENT PROVIDING METHOD USING BROADCAST SERVICE GUIDE INFORMATION THEREOF - A related content providing method using broadcast service guide information of a mobile terminal is disclosed. The method includes playing broadcast content stored in the mobile terminal, searching for real-time broadcast content related to the played broadcast content while displaying the played broadcast content, and displaying information associated with the searched real-time broadcast content. | 10-13-2011 |
Patent application number | Description | Published |
20090100765 | POLISHING SLURRY, METHOD OF PRODUCING SAME, AND METHOD OF POLISHING SUBSTRATE - Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same. | 04-23-2009 |
20090133336 | POLISHING SLURRY, METHOD OF PRODUCING SAME, AND METHOD OF POLISHING SUBSTRATE - Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same. | 05-28-2009 |
Patent application number | Description | Published |
20100037278 | APPARATUS AND METHOD FOR TRANSMITTING AND RECEIVING BROADCASTING INFORMATION - An apparatus and method for transmitting and receiving broadcasting information transmission in a Digital Video Broadcasting (DVB) system are provided. The method for transmitting broadcasting information includes dividing a Program Specific Information (PSI) and/or Service Information (SI) table received from an upper layer into a plurality of sections, generating section numbers with respect to the sections, channel-coding and interleaving the sections, generating a Transport Stream (TS) packet including at least one section, section information and channel coding information, and multiplexing the TS packet together with a data TS packet. | 02-11-2010 |
20100321589 | MOBILE TERMINAL CAPABLE OF RECEIVING MOBILE BROADCAST SERVICES AND CHANNEL CONTROL METHOD THEREFOR - A mobile terminal capable of receiving mobile broadcast services and a channel control method for the same are provided. The channel control method includes outputting broadcast data present in a frame received on a current channel during a frame transport interval, scanning, during a sleep interval after the frame transport interval, for at least one frequency corresponding to a preset preference channel, extracting channel information by parsing a frame carried by the scanned frequency, and storing the extracted channel information while updating existing channel information. Hence, the channel search time experienced by the user for viewing channel information may be shortened. | 12-23-2010 |
20110016495 | TERMINAL AND METHOD FOR RECEIVING FRAMES OF BROADCAST DATA - A user terminal and method are provided for receiving broadcast data based on frames. A determination is made whether the broadcast data is transmitted via a primary RS frame for transmitting first broadcast data or a secondary RS frame for transmitting second broadcast data. When the broadcast data is transmitted via the secondary RS frame for the second broadcast data, a channel state of a channel through which a frame containing the second broadcast data is transmitted is checked. When the checked channel state is greater than or equal to a preset first channel state, only the second broadcast data contained in the secondary RS frame is received. Therefore, the user terminal can periodically receive frames containing its necessary broadcast data and can thus reduce power consumption. | 01-20-2011 |
Patent application number | Description | Published |
20140175503 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode. | 06-26-2014 |
20140191194 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure. | 07-10-2014 |
20140197374 | METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED THEREBY - There is provided a method of manufacturing a nitride semiconductor light emitting device, the method including: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first conductivity-type nitride semiconductor layer, an active layer and a second conductivity-type nitride semiconductor layer sequentially stacked on a substrate; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film. | 07-17-2014 |
20140231859 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes. | 08-21-2014 |
Patent application number | Description | Published |
20130320424 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first source layer; at least one of a second source layer, the second source layer formed substantially in the first source layer; a plurality of conductive layers stacked substantially over the first source layer; channel layers that pass through the plurality of conductive layers and couple to the second source layer; and at least one of a third source layer, the third source layer formed substantially in the second source layer, wherein the third source layer passes through the second source layer and is coupled to the first source layer. | 12-05-2013 |
20140191389 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate in which a cell region and a contact region are defined, a pad structure including a plurality of first conductive layers and a plurality of first insulating layers formed alternately with each other in the contact region of the substrate, wherein an end of the pad structure is patterned stepwise, portions of the first conductive layers exposed at the end of the pad structure are defined as a plurality of pad portions, and the plurality of pad portions have a greater thickness than unexposed portions of the plurality of first conductive layers. | 07-10-2014 |
20140370675 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of conductive layers and a plurality of insulating layers formed alternately with each other, at least one channel layer passing through the plurality of conductive layers and the plurality of insulating layers, and at least one first charge blocking layer surrounding the at least one channel layer, wherein a plurality of first regions, interposed between the at least one channel layer and the plurality of conductive layers, and a plurality of second regions, interposed between the at least one channel layer and the plurality of insulating layers, are alternately defined on the at least one first charge blocking layer, and each of the plurality of first regions has a greater thickness than each of the plurality of second regions. | 12-18-2014 |
Patent application number | Description | Published |
20130153978 | 3D NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A 3D non-volatile memory device includes a pipe gate, at least one first channel layer including a first pipe channel layer formed in the pipe gate and a pair of first source side channel layer and first drain side channel layer connected to the first pipe channel layer, and at least one second channel layer including a second pipe channel layer formed in the pipe gate and positioned over the first pipe channel layer and a pair of second source side channel layer and second drain side channel layer connected to the second pipe channel layer. | 06-20-2013 |
20130171787 | METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE - A method for fabricating a non-volatile memory device includes alternately stacking a plurality of inter-layer dielectric layers and a plurality of sacrificial layers over a substrate, forming at least a channel hole that exposes the substrate by selectively etching the inter-layer dielectric layers and the sacrificial layers, forming a protective layer on sidewalls of the sacrificial layers that are exposed through the channel hole, sequentially forming a memory layer and a channel layer on the sidewalls of the channel hole, forming slit holes that penetrate through the inter-layer dielectric layers and the sacrificial layers on both sides of the channel hole, removing the sacrificial layers that are exposed through the slit holes, removing the protective layer, and forming gate electrodes in space from which the sacrificial layers and the protective layer are removed. | 07-04-2013 |
20150017771 | 3D NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A 3D non-volatile memory device includes a pipe gate, at least one first channel layer including a first pipe channel layer formed in the pipe gate and a pair of first source side channel layer and first drain side channel layer connected to the first pipe channel layer, and at least one second channel layer including a second pipe channel layer formed in the pipe gate and positioned over the first pipe channel layer and a pair of second source side channel layer and second drain side channel layer connected to the second pipe channel layer. | 01-15-2015 |
20150064900 | THREE DIMENSIONAL SEMICONDUCTOR DEVICE INCLUDING PADS - A semiconductor device includes a substrate in which a cell region and a contact region are defined, a pad structure including a plurality of first conductive layers and a plurality of first insulating layers formed alternately with each other in the contact region of the substrate, wherein an end of the pad structure is patterned stepwise, portions of the first conductive layers exposed at the end of the pad structure are defined as a plurality of pad portions, and the plurality of pad portions have a greater thickness than unexposed portions of the plurality of first conductive layers. | 03-05-2015 |
20150072492 | METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE - A method for fabricating a non-volatile memory device includes alternately stacking a plurality of inter-layer dielectric layers and a plurality of sacrificial layers over a substrate, forming at least a channel hole that exposes the substrate by selectively etching the inter-layer dielectric layers and the sacrificial layers, forming a protective layer on sidewalls of the sacrificial layers that are exposed through the channel hole, sequentially forming a memory layer and a channel layer on the sidewalls of the channel hole, forming slit holes that penetrate through the inter-layer dielectric layers and the sacrificial layers on both sides of the channel hole, removing the sacrificial layers that are exposed through the slit holes, removing the protective layer, and forming gate electrodes in space from which the sacrificial layers and the protective layer are removed. | 03-12-2015 |
20150255385 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes insulating layers stacked in the shape of stairs, and conductive layers alternately stacked with the insulating layers, wherein the conductive layers each include a first region interposed between upper and lower insulating layers thereof, among the insulating layers, and a second region which extends from the first region and protrudes between the upper and lower insulating layers, and wherein a protruding part formed on a sidewall or an upper surface of the second region. | 09-10-2015 |
Patent application number | Description | Published |
20140117381 | Epitaxial Wafer, Method for Fabricating the Same, and Semiconductor Device Including the Same - Disclosed is an epitaxial wafer including a substrate and an epitaxial structure disposed on the substrate, wherein the epitaxial structure is doped with an n-type or p-type dopant and has a doping uniformity of 10% or less. | 05-01-2014 |
20140117382 | Epitaxial Wafer, Method for Fabricating the Wafer, and Semiconductor Device Including the Wafer - Disclosed is an epitaxial wafer including a substrate, and an epitaxial structure disposed on the substrate, wherein the epitaxial structure includes a first epitaxial layer, a second epitaxial layer disposed on the first epitaxial layer, and a third epitaxial layer disposed between the first epitaxial layer and the second epitaxial layer, the third epitaxial layer having a first doping concentration around a first boundary adjacent to the first epitaxial layer and a second doping concentration different from the first doping concentration around a second boundary adjacent to the second epitaxial layer. | 05-01-2014 |
20140130742 | APPARATUS AND METHOD FOR DEPOSITION - Disclosed are a deposition apparatus and a deposition method. The deposition apparatus comprises a generator to produce an intermediate compound by using a source material, a storage part to collect and store the intermediate compound, and a reaction part in which the intermediate compound is introduced and reaction of the intermediate compound occurs. The deposition method comprises producing an intermediate compound by using a source material, collecting and storing the intermediate compound, and introducing the intermediate compound into a reaction furnace and allowing the intermediate compound to react to a substrate or a wafer. | 05-15-2014 |
20140131736 | SEMICONDUCTOR DEVICE AND METHOD FOR GROWING SEMICONDUCTOR CRYSTAL - A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate. | 05-15-2014 |
20140137793 | METHOD OF FABRICATING WAFER - A method of fabricating a wafer according to the embodiment comprises the steps of growing an wafer on a surface of the wafer in a growth temperature; and cooling the wafer after the wafer has been grown, wherein a stepwise cooling is performed when cooling the wafer. | 05-22-2014 |
20140137799 | DEPOSITION APPARATUS AND METHOD OF FORMING THIN FILM - A deposition apparatus and a method of forming a thin film are provided. The deposition apparatus includes a reaction gas supply unit supplying a reaction gas, a buffer unit temporarily storing the reaction gas supplied from the reaction gas supply unit, and a deposition unit forming a thin film by using the reaction gas supplied from the buffer unit. | 05-22-2014 |
20140154423 | APPARATUS AND METHOD FOR DEPOSITION - A deposition apparatus according to the embodiment includes a gas supply part for supplying a first gas; an ionization part connected to the gas supply part to supply a second gas, which is obtained by ionizing the first gas; and a reaction part into which the second gas is introduced to create a reaction. A deposition method according to the embodiment includes the steps of preparing a first gas; supplying a second gas, which is obtained by ionizing the first gas; and reacting the second gas with a substrate. | 06-05-2014 |
20140170838 | APPARATUS AND METHOD FOR FABRICATING WAFER - A method for fabricating a wafer according to the embodiment comprises the steps of depositing an epi layer in an epi deposition part; transferring the wafer to an annealing part connected to the epi deposition part; annealing the wafer in the annealing part; transferring the wafer to a cooling part connected to the annealing part; and cooling the wafer in the cooling part, wherein the depositing of the wafer, the annealing of the wafer and the cooling of the wafer are continuously performed. An apparatus for fabricating a wafer according to the embodiment comprises an epi deposition part; an annealing part connected to the epi deposition part; and a cooling part connected to the annealing part. | 06-19-2014 |
20140290581 | DEPOSITION APPARATUS - Disclosed is a deposition apparatus. The deposition apparatus comprises a susceptor into which reaction gas is introduced; a holder supporting a substrate in the susceptor; and a rotating driver for rotating the holder. | 10-02-2014 |
20140319545 | METHOD FOR DEPOSITION OF SILICON CARBIDE AND SILICON CARBIDE EPITAXIAL WAFER - A method for deposition of silicon carbide according to an embodiment includes preparing a wafer in a susceptor; introducing first etching gas into the susceptor; introducing second etching gas into the susceptor; producing an intermediate compound by introducing a reactive raw material into the susceptor; and forming a silicon carbide epitaxial layer on the wafer by reacting the intermediate compound with the wafer. | 10-30-2014 |
20150108493 | SILICON CARBIDE EPITAXIAL WAFER, AND PREPARATION METHOD THEREOF - According to an embodiment, there is provided a method of fabricating an epitaxial wafer, which includes preparing a wafer in a susceptor; and growing an epitaxial layer on the wafer, wherein the growing of the epitaxial layer on the wafer includes supplying a raw material into the susceptor; growing the epitaxial layer on the wafer at a first growth rate; and growing the epitaxial layer on the wafer at a second growth rate higher than the first growth rate. According to an embodiment, there is provided a silicon carbide epitaxial wafer which includes a silicon carbide wafer; and a silicon carbide epitaxial layer on the silicon carbide wafer wherein a surface defect formed on the silicon carbide epitaxial layer is 1 ea/cm | 04-23-2015 |
20150259828 | EPITAXIAL WAFER AND METHOD FOR FABRICATING THE SAME - Provided are an epitaxial wafer and a method of fabricating the same. The method includes a pre-growth step of injecting a reaction source for epitaxial growth on a semiconductor wafer prepared in a chamber and growing an epitaxial layer by a predetermined first thickness at a predetermined first growth rate and at a predetermined first growth temperature, a heat treatment step of performing heat treatment on the epitaxial layer grown by the pre-growth step during a predetermined time, and a subsequent growth step of injecting the reaction source on the heat-treated semiconductor wafer and growing the epitaxial layer to a target thickness at a predetermined second growth rate and at a predetermined second growth temperature. The first growth rate is smaller than the second growth rate. | 09-17-2015 |
20150295049 | EPITAXIAL WAFER AND SWITCH ELEMENT AND LIGHT-EMITTING ELEMENT USING SAME - An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm | 10-15-2015 |
20150311290 | EPITAXIAL WAFER AND SWITCH ELEMENT AND LIGHT-EMITTING ELEMENT USING SAME - An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises first to third semiconductor layers. The third semiconductor layer has a thickness that is thicker than that of the first semiconductor layer. A second doping density of the second semiconductor layer is between a first doping density of the first semiconductor layer and a third doping density of the third semiconductor layer. | 10-29-2015 |
Patent application number | Description | Published |
20140115656 | SECURITY MANAGEMENT UNIT, HOST CONTROLLER INTERFACE INCLUDING SAME, METHOD OPERATING HOST CONTROLLER INTERFACE, AND DEVICES INCLUDING HOST CONTROLLER INTERFACE - A method of operating a host controller interface includes receiving a buffer descriptor including sector information from a main memory, fetching data by using a source address included in the buffer descriptor, selecting one of a plurality of entries included in a security policy table by using the sector information, and determining whether to encrypt the fetched data by using a security policy included in the selected entry. | 04-24-2014 |
20140195742 | SYSTEM ON CHIP INCLUDING MEMORY MANAGEMENT UNIT AND MEMORY ADDRESS TRANSLATION METHOD THEREOF - A system on chip (SoC) including a memory management unit (MMU) and a memory address translation method thereof are provided. The SoC includes a master intellectual property (IP) configured to output a request corresponding to each of a plurality of working sets; an MMU module comprising a plurality of MMUs, each of which is allocated for one of the working sets and translates virtual addresses corresponding to the request into physical addresses; a first bus interconnect configured to connect the MMU module with a memory device and to transmit the request, on which address translation has been performed in at least one of the MMUs, to the memory device; and a second bus interconnect configured to connect the master IP with the MMU module and to allocate one of the MMUs for each of the working sets. | 07-10-2014 |
20140244908 | INTEGRATED CIRCUIT FOR COMPUTING TARGET ENTRY ADDRESS OF BUFFER DESCRIPTOR BASED ON DATA BLOCK OFFSET, METHOD OF OPERATING SAME, AND SYSTEM INCLUDING SAME - A method of operating an integrated circuit is provided. The method includes receiving a data block offset from a second storage device, obtaining a target entry address using the data block offset, and reading an entry among a plurality of entries comprised in a buffer descriptor stored in a first storage device based on the target entry address. The method also includes reading data from a data buffer among a plurality of data buffers included in the first storage device using a physical address included in the entry and transmitting the data to the second storage device. | 08-28-2014 |
20140258674 | SYSTEM-ON-CHIP AND METHOD OF OPERATING THE SAME - A system on chip (SoC) includes a central processing unit (CPU), an intellectual property (IP) block, and a memory management unit (MMU). The CPU is configured to set a prefetch direction corresponding to a working set of data. The IP block is configured to process the working set of data. The MMU is configured to prefetch a next page table entry from a page table based on the prefetch direction during address translation between a virtual address of the working set of data and a physical address. | 09-11-2014 |
20150356308 | SECURITY MANAGEMENT UNIT, HOST CONTROLLER INTERFACE INCLUDING SAME, METHOD OPERATING HOST CONTROLLER INTERFACE, AND DEVICES INCLUDING HOST CONTROLLER INTERFACE - A method of operating a host controller interface includes receiving a buffer descriptor including sector information from a main memory, fetching data by using a source address included in the buffer descriptor, selecting one of a plurality of entries included in a security policy table by using the sector information, and determining whether to encrypt the fetched data by using a security policy included in the selected entry. | 12-10-2015 |
Patent application number | Description | Published |
20100251754 | DEGASSING CONTAINER FOR REFRIGERATOR - Provided is a degassing container for a refrigerator in which a portion of air within a storage space is forcedly discharged to allow the storage space to become a low pressure state. The degassing container includes a case, a door, a gasket, a pressing part, and a degassing adjustment part. The case has an opened side. The door selectively shields the opened side of the case. The gasket is interposed between the door and the case and elastically deformed and closely attached when the door is shielded. The pressing part is provided in the door and the case and selectively closely attaches the door by a rotation operation. The degassing adjustment part selectively enters and exits air within the case by operating the pressing part. Therefore, the refrigerator has improved storage performance. | 10-07-2010 |
20110271703 | REFRIGERATOR - A refrigerator is provided. The refrigerator includes a compressor, a condenser, an expansion valve, an evaporator, a bypass pipe, and a valve device. The condenser condenses refrigerant discharged from the compressor, and the expansion valve expands the refrigerant condensed in the condenser. The evaporator evaporates the refrigerant expanded in the expansion valve, and the bypass pipe allows the refrigerant discharged from the compressor to move toward an inlet of the evaporator. The valve device allows the refrigerant discharged from the compressor to selectively move toward the bypass pipe or the condenser. The valve device comprises an inlet, a first outlet, and a second outlet. The refrigerant discharged from the compressor flows into the inlet. The refrigerant is discharged toward the condenser through the first outlet, and is discharged toward the bypass pipe through the second outlet. The first outlet has a diameter larger than that of the second outlet. | 11-10-2011 |
20110289957 | REFRIGERATOR AND DEGASSING CONTAINER FOR REFRIGERATOR - The present invention relates to a refrigerator and a degassing container of the refrigerator which compulsorily degass a portion of air inside a space where foods are stored to the outside by a degassing means together with deformation of a gasket when a door is closely adhered. The present invention includes a degassing container of a refrigerator comprising a case whose one side is opened; a door which shields the opened one side of the case selectively; a gasket interposed between the door and case and elastically deformed to be closely adhered when the door is shielded; a degassing means provided on the door and exhausting air inside the case to the outside when the gasket is compressively deformed; and a release means provided on the door and flowing external air into an inner side of the case when the door is opened. According to the present invention, the storage performance is improved. | 12-01-2011 |
Patent application number | Description | Published |
20140172123 | USER TERMINAL APPARATUS, NETWORK APPARATUS, AND CONTROL METHOD THEREOF - A network apparatus including a communicator to perform communication with a plurality of devices and a user terminal apparatus to control the plurality of devices is provided. A controller generates control signals to control the plurality of devices based on a user command received from the user terminal apparatus, and controls the communicator to transmit the control signals to the plurality of devices; wherein, in response to a predetermined control pattern to sequentially control the plurality of devices being detected, the controller generates and transmits macro information which corresponds to the detected control pattern to the user terminal apparatus. | 06-19-2014 |
20150100813 | METHOD AND DEVICE FOR PROCESSING IMAGES TO SAVE POWER - A method and a device for processing images to save power are provided. A method by which a device processes images displayed on a screen includes determining a battery level of the device, comparing the battery level with a plurality of set threshold ranges, and changing a background image and an icon image displayed on the screen of the device based on a comparison result. | 04-09-2015 |
20150229997 | USER TERMINAL AND CONTROL METHOD THEREOF - A user terminal and a control method thereof, in which contents may be shared with a simple input are provided. The user terminal includes a display configured to display a screen of a content, a communicator configured to communicate with another device, a user input configured to receive a user's input, and a controller configured to determine one transfer mode among a plurality of transfer modes for transferring contents based on information about the contents being executed in one of the user terminal and the other device, and controls the executing content that is transferred between the user terminal and the other device in the determined one transfer mode. | 08-13-2015 |