Patent application number | Description | Published |
20080247707 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME - An optical semiconductor device includes a waveguide and a refractive index control portion. The waveguide has one or more first segments, one or more second segments and a plurality of third segments. The first segment has a region that includes a diffractive grating and another region that is a space region combined to the region. The second segment has a region that includes a diffractive grating and another region that is a space region combined to the region. A length of the second segment is different from that of the first segment. The third segment has a region that includes a diffractive grating and another region that is a space region combined to the region. A length of the third segment is shown as L | 10-09-2008 |
20090103585 | Optical semiconductor element and optical semiconductor device - An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region. | 04-23-2009 |
20100022044 | LASER DEVICE, LASER MODULE, SEMICONDUCTOR LASER AND FABRICATION METHOD OF SEMICONDUCTOR LASER - A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes. A first segment located in the first diffractive grating region or the second diffractive grating region has an optical length shorter or longer than the other segments of the first diffractive grating region and the second diffractive grating region by odd multiple of half of the pitch of the diffractive grating of the first diffractive grating region. | 01-28-2010 |
20100091805 | OPTICAL SEMICONDUCTOR ELEMENT AND OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region. | 04-15-2010 |
20100247031 | OPTICAL WAVEGUIDE DEVICE, ITS MANUFACTURE METHOD, LASER MODULE AND OPTICAL TRANSMISSION SYSTEM - A first optical waveguide of a convex shape is formed over a substrate. A second optical waveguide of a convex shape is formed over the substrate. A multimode interference waveguide of a convex shape is formed over the substrate for optically coupling the first optical waveguide to the second optical waveguide. Either side of the first optical waveguide is filled with a filling material, but either side of the second optical waveguide is not filled with the filling material. | 09-30-2010 |
20110096804 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME - An optical semiconductor device includes a waveguide having one or more first segments having a region that includes a diffractive grating and another region combined to the region, one or more second segments having a region that includes a diffractive grating and another region combined to the region and a plurality of third segments having a region the includes a diffractive grating and another region combined to the region, a length of the second segment being different from that of the first segment, a length of the third segment being shown as L | 04-28-2011 |
Patent application number | Description | Published |
20100246629 | MULTIPLE-WAVELENGTH LASER DEVICE - A multiple-wavelength laser device includes a first semiconductor laser chip having two modulable unit laser portions, outputs of the unit laser portions being optically coupled to a single output optical axis; a second semiconductor laser chip having two or less than two modulable unit laser portions, outputs of the unit laser portions being optically coupled to a single output optical axis; an optical coupler that combines the output optical axes of the first and the second semiconductor laser chips; and a plurality of drive current pathways or a plurality of signal transmission pathways that are coupled to each of the unit laser portions of the first and the second semiconductor laser chips with a connection conductor. | 09-30-2010 |
20100247033 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device in which light having a wavelength of 1.25 μm or greater is waveguided, includes: a first waveguide of embedded type that includes a semiconductor and is lattice-matched with InP, the first waveguide having a region having a first constant width equal to or greater than 1.50 μm and a first region narrower than the region; and a second waveguide of embedded type that includes another semiconductor having a refractive index different from that of the first waveguide, the second waveguide having a region having a second constant width smaller than 1.50 μm and a second region wider than said region. The first waveguide and the second waveguide are joined at an intermediate waveguide portion. The intermediate waveguide portion includes the first region and the second region and a joining plane on which the first region and the second region are joined. The joining plane has a width equal to or smaller than 1.35 μm. | 09-30-2010 |
20100297796 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device including growing an InAlGaAsP layer having a thickness of 1.0 μm or more on a surface of an InP semiconductor layer at a growth temperature of 680 degrees C. or more, a composition ratio “X” of Ga in InAlGa of the InAlGaAsP being 0≦X≦0.08. | 11-25-2010 |
20110292960 | WAVELENGTH TUNABLE SEMICONDUCTOR LASER - A wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more; a second facet; a wavelength selection portion between the first facet and the second facet; and an optical absorption region between the first facet and the wavelength selection portion. Another wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more to inside of the semiconductor laser; a second facet for output; a wavelength selection portion having diffraction gratings and positioned between the first and the second facet; an optical absorption region located between the first facet and the wavelength selection portion. | 12-01-2011 |