Patent application number | Description | Published |
20090061651 | Substrate processing apparatus and method for manufacturing semiconductor device - A substrate processing apparatus comprising: a reaction tube that processes a substrate; a support portion that supports the substrate in the reaction tube; a process gas supply line that supplies a process gas into the reaction tube; and an exhaust line that exhausts an inside of the reaction tube, wherein the process gas is supplied into the reaction tube to form a silicon nitride film on the substrate, at least the reaction tube is made of quartz, a plurality of projections are provided on the inner wall of the reaction tube, and the diameter of the projections is larger than 2 μm but smaller than 86 μm. | 03-05-2009 |
20090087964 | Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus - To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used. There are provided the step of loading a plurality of substrates into a processing chamber; supplying a first processing gas to an upper stream side of a gas flow outside of a region where a plurality of substrates loaded into a processing chamber are arranged, supplying a second processing gas to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, supplying the first processing gas to a middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged, and causing the first processing gas and the second processing gas to react with each other in the processing chamber, to form an amorphous material and form a thin film on main surfaces of the plurality of substrates; and the step of unloading the substrate after forming the thin film from the processing camber. | 04-02-2009 |
20090305517 | Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus - A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion. | 12-10-2009 |
20100029089 | Method for manufacturing semiconductor device, and substrate processing apparatus - A method for manufacturing a semiconductor device includes the steps of: loading a substrate into a reaction chamber; supplying reactive gases into the reaction chamber and processing the substrate; and unloading the processed substrate from the reaction chamber, wherein the step of processing the substrate includes: a first film formation step of setting the substrate to a first temperature and forming a first silicon film including impurity atoms on the substrate and a second film formation step of setting the substrate to a second temperature, which is lower than the first temperature, and forming a second silicon film that includes no impurity atoms or has an impurity concentration lower than that of the first silicon film on at least the first silicon film. | 02-04-2010 |
20100154711 | SUBSTRATE PROCESSING APPARATUS - Films are formed on a plurality of substrates through a batch process while preventing formation of films on the rear surfaces of the substrates. For this, a substrate processing apparatus comprises a reaction vessel, supports, a support holder, and an induction heating device. The reaction vessel is configured to process substrates therein. The supports are made of a conductive material and having a disk shape, and each of the supports is configured to accommodate a substrate in its concave part in a state where the substrate is horizontally positioned with a top surface of the substrate being exposed. The concave part is formed concentrically with a circumference of the support, and a difference between radii of the support and the concave part is greater than a distance between neighboring two of the supports held by the support holder. The support holder is configured to hold at least the supports horizontally in multiple stages. The induction heating device is configured to heat at least the supports held by the support holder inside the reaction vessel by using an induction heating method. | 06-24-2010 |
20130068159 | Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus - A substrate processing apparatus includes a processing chamber that forms a thin film on a main surface of a plurality of substrates and a heater provided outside of the processing chamber, for heating an inside of the processing chamber. The substrate processing apparatus also includes a first gas supply part configured to supply a first processing gas, a second gas supply part configured to supply the first processing gas to a middle part of a gas flow, a third gas supply part configured to supply a second processing gas, an exhaust part and a controller that causes the first processing gas and the second processing gas to react with each other in the processing chamber to form an amorphous material, and form a thin film of the plurality of substrates. | 03-21-2013 |
Patent application number | Description | Published |
20090041420 | RECORDING AND REPRODUCING APPARATUS - A recording and reproducing apparatus for recording and reproducing the stream of a content, in which video image and audio streams are extracted from streams of a predetermined format, and a new stream, the edit of which can be freely carried out, is created from the streams and recorded. A recording and reproducing apparatus comprises an input/output interface for inputting a stream, a stream conversion processing portion for converting an input stream of a predetermined format into a stream comprising only a video image stream and an audio stream and a recording medium writing control portion for writing and recording the converted stream in a recording medium. The recording medium writing control portion writes managing information representing that the stream converted by the stream conversion processing portion is recorded in a predetermined area (manufacturer definition area) of the recording medium. The recording and reproducing apparatus can control various functions (display function, edit function, reproduction function, output function, dubbing function, and so forth) according to the managing information. | 02-12-2009 |
20090263109 | RECORDING APPARATUS, METHOD FOR CONTROLLING RECORDING APPARATUS, CONTROL PROGRAM OF RECORDING APPARATUS, AND COMPUTER-READABLE RECORDING MEDIUM - A recording/reproducing apparatus ( | 10-22-2009 |
20100116649 | GAS GENERATING DEVICE AND CARBON ELECTRODE FOR GAS GENERATION - A gas generating device of present invention is generated a first gas at a first carbon electrode by applying a voltage between said first carbon electrode and a second electrode to electrolyzing an electrolytic solution. The first carbon electrode is an anode or a cathode. The first carbon electrode is provided with a plurality of fine gas flow channels which selectively pass said first gas generated on one surface of said first carbon electrode to the other surface without allowing said electrolytic solution to permeate therethrough. | 05-13-2010 |
Patent application number | Description | Published |
20110224826 | ROBOT SYSTEM - A process includes defining, in a memory, arm-occupied regions including robot arms and a workpiece and tool attached to a robot wrist, a virtual safety protection barrier with which the arms are not allowed to come into contact, and movable ranges of robot axes; estimating the coasting angle of each robot axis for which the axis will coast when the robot is stopped due to an emergency stop while moving to a next target position, from an actually measured amount of coasting and the like; determining a post-coasting predicted position of the robot by adding the estimated coasting angles to the next target position; checking whether or not the arm-occupied regions at the post-coasting predicted position will come into contact with the virtual safety protection barrier, or whether or not the robot axes are within the movable ranges; and performing control to stop the robot immediately upon detection of abnormality. | 09-15-2011 |
20120239192 | ROBOT SYSTEM - A robot system includes a robot, and a robot controller configured to control operation of the robot. The robot includes two arms including tools at their tip ends, and a body that supports the two arms and allows them to swing. The robot controller controls the robot so as to keep the tool provided at the tip end of at least one arm of the two arms at the same position in the same posture during a time period between before and after a swing. | 09-20-2012 |
20140114476 | ROBOT CONTROLLER AND ROBOT SYSTEM - A robot controller includes queues, a storage unit, and an execution control unit. The queues are provided for respective controlled groups serving as controlled units. The storage unit stores therein instructions directed to the respective controlled groups, one at a time, from a bottom end of each of the queues. When having accepted a predetermined operation request, the execution control unit simultaneously fetches the instructions directed to the controlled groups, one for each of the controlled groups at a time, from tops of the queues, and makes all of the controlled groups simultaneously start the operations based on such instructions. If there is any controlled group to which no corresponding instruction exists, the storage unit stores therein a no-operation instruction. If the fetched instruction is the no-operation instruction, the execution control unit keeps the controlled group from operating until an instruction is fetched next time. | 04-24-2014 |