Patent application number | Description | Published |
20100240854 | PRE-EXPANDED POLYPROPYLENE RESIN PARTICLE, AND METHOD FOR PRODUCTION THEREOF - A pre-expanded polypropylene resin particle can be produced in the following manner: a polypropylene resin particle produced by an under water cut method, water, a dispersing agent, and a foaming agent are charged in a pressure-resistant container, the resulting mixture is heated to a temperature equal to or higher than the softening temperature of the polypropylene resin particle to allow the polypropylene resin particle to be impregnated with the foaming agent under pressure, and the resulting product is released into the atmosphere having a pressure lower than the pressure of the inside of the pressure-resistant container. As the polypropylene resin composition, a composition is used which comprises 100 parts by weight of a polypropylene resin and 1 to 20 parts by weight of a polyethylene resin having a melt viscosity of 10 to 2000 mPa·s at 140° C., whereby it becomes possible to reduce the pressure of a heated molding vapor required for producing an in-mold expanded molding product having a fusion rate of 75% or higher. | 09-23-2010 |
20100245870 | IMAGE PROCESSING APPARATUS, IMAGE FORMING APPARATUS, AND IMAGE PROCESSING METHOD - An image processing apparatus includes: a recognition process section for performing, on the basis of image data of a document, a character recognition process of recognizing a character contained in the document; a chromatic text generation section for generating color text data (character image data) indicative of character images in which character images with different attributes are displayed with different colors; and an image composition section for generating composite image data by combining the image data of the document with the color text data so that each of the character images indicated by the color text data is partially superimposed on a corresponding image of a character in the document. The image processing apparatus causes a display device to display an image in accordance with the composite image data. This allows a user to easily check whether or not a result of the character recognition process is correct. | 09-30-2010 |
Patent application number | Description | Published |
20090079651 | Antenna Apparatus and Method for Adjusting Characteristics Thereof - An antenna apparatus includes an antenna block and a substrate. The antenna block has a base that is made of a substantially cuboid dielectric body, an upper-surface conductor formed on an upper surface of the base, first and second pad electrodes that are formed on both ends of a bottom surface of the base in a longitudinal direction of the base, respectively, and a lateral-surface conductor connecting the upper-surface conductor and the second pad electrode. The substrate has a region mounting the antenna block, a ground pattern provided around the mounting region, first and second lands that are provided within the mounting region so as to correspond to the positions of the first and second pad electrodes, a feed line that is connected to the first land, an impedance-adjusting pattern connecting the first land and the ground pattern, and a frequency-adjusting pattern connecting the second land and the ground pattern. | 03-26-2009 |
20100220030 | ANTENNA DEVICE - An antenna device is provided with an antenna element including a base, an inductance adjustment pattern that is formed on the upper surface and a side surface of the base and has a substantially U-shape, a capacitance adjustment pattern that is formed on the upper surface of the base and is placed to face the inductance adjustment pattern, and first to third terminal electrodes provided on the bottom surface of the base. The antenna element is installed between the first side and the second side of the ground pattern that form the two facing sides of the antenna mounting region. One end of the inductance adjustment pattern is connected to the feed line, the other end of the inductance adjustment pattern is connected to the first side of the ground pattern, and the third terminal electrode is connected to the second side of the ground pattern. | 09-02-2010 |
20100225542 | ANTENNA DEVICE AND ANTENNA ELEMENT USED THEREFOR - An antenna device includes an antenna element and a printed circuit board on which the antenna element is mounted. The antenna element includes a base, a radiation conductor formed on an upper surface of the substrate and one end of the radiation conductor being an open end, a plurality of terminal electrodes formed on a bottom surface of the substrate, and a loop conductor of a substantially U-shape. The loop conductor is arranged to face one of the terminal electrodes via a gap having a predetermined width. An antenna mounting region is provided on a upper surface of the printed circuit board to be adjacent to an edge of a long side of the printed circuit board. A feed line is led in the antenna mounting region along the edge. One and the other end of the loop conductor are connected to the feed line and a ground pattern, respectively. | 09-09-2010 |
20130335289 | ANTENNA DEVICE - The present invention is to provide an antenna device with the isolation among feedpoints being further improved. In order to achieve this goal, the present invention provides an antenna device provided with a substrate having a ground area, and a first conductor, a second conductor and a third conductor. In the antenna, one end of the second conductor is connected to the ground area via a first feedpoint and the other end of the second conductor is connected to the first conductor. A second feedpoint is included serially in the third conductor at any position. Further, at least part of the third conductor is disposed opposite to the first conductor, and both ends of the third conductor are connected to the ground area. | 12-19-2013 |
20150061393 | VARIABLE VOLTAGE CIRCUIT - In a variable voltage circuit | 03-05-2015 |
Patent application number | Description | Published |
20080200038 | Heat processing method and apparatus for semiconductor process - A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer. | 08-21-2008 |
20090041650 | Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type - A method for removing a metal impurity from a quartz component part in a heat processing apparatus of a batch type includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product target substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container. | 02-12-2009 |
20090263975 | FILM FORMATION METHOD AND APPARATUS FOR FORMING SILICON-CONTAINING INSULATING FILM DOPED WITH METAL - A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas. | 10-22-2009 |
20100135877 | Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type - A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container. | 06-03-2010 |
20110201210 | FILM FORMATION METHOD, FILM FORMATION APPARATUS, AND METHOD FOR USING FILM FORMATION APPARATUS - A film formation method includes a film formation process for forming an SiO | 08-18-2011 |
Patent application number | Description | Published |
20120199827 | THIN-FILM TRANSISTOR CIRCUIT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode. | 08-09-2012 |
20140191231 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode. | 07-10-2014 |