Patent application number | Description | Published |
20080248639 | Method for forming electrode for group III nitride based compound semiconductor and method for manufacturing p-type group III nitride based compound semiconductor - An undoped GaN layer having a thickness of 3 μm is formed by MOVPE on a sapphire substrate with a buffer layer composed of aluminum nitride (AlN) therebetween. A GaN layer doped with 5×10 | 10-09-2008 |
20080293231 | Method for forming electrode for Group-III nitride compound semiconductor light-emitting devices - A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first electrode layer being made of a material having high adhesion to the Group-III nitride compound semiconductor layer or low contact resistance with the Group-III nitride compound semiconductor layer and also includes a step of forming a second electrode layer made of a highly reflective metal material on the first electrode layer. | 11-27-2008 |
20080308833 | Group III nitride-based compound semiconductor light-emitting device - The refractive index of a titanium oxide layer is modified by adding an impurity (e.g., niobium (Nb)) thereto within a range where good electrical conductivity is obtained. The Group III nitride-based compound semiconductor light-emitting device of the invention includes a sapphire substrate, an aluminum nitride (AlN) buffer layer, an n-contact layer, an n-cladding layer, a multiple quantum well layer (emission wavelength: 470 nm), a p-cladding layer, and a p-contact layer. On the p-contact layer is provided a transparent electrode made of niobium titanium oxide and having an embossment. An electrode is provided on the n-contact layer. An electrode pad is provided on a portion of the transparent electrode. Since the transparent electrode is formed from titanium oxide containing 3% niobium, the refractive index with respect to light (wavelength: 470 nm) becomes almost equal to that of the p-contact layer. Thus, the total reflection at the interface between the p-contact layer and the transparent electrode can be avoided to the smallest possible extent. In addition, by virtue of the embossment, light extraction performance is increased by 30%. | 12-18-2008 |
20090072267 | Group III nitride-based compound semiconductor light-emitting device - Provided is a GaN-based semiconductor light-emitting device which does not require an external constant-current circuit. The light-emitting device of the present invention includes a sapphire substrate; an AlN buffer layer formed on the substrate; and an HEMT structure formed on the buffer layer, the HEMT structure including a GaN layer and an Al | 03-19-2009 |
20090104757 | Method for producing group III nitride-based compound semiconductor - An object of the present invention is to remove micro-scratches on a surface of a GaN substrate cut from a GaN ingot. The invention is directed to establish a method for surface treatment of a GaN substrate, including heating the surface in an atmosphere containing trimethylgallium, ammonia, and hydrogen. It is preferable that the trimethylgallium feeding rate is 150 μmol/min or higher, the ratio of trimethylgallium feeding rate to ammonia feeding rate (V/III ratio) is 1,200 to 4,000, and the heating temperature is 1,000° C. to 1,250° C. In addition, the temperature of the surface treatment is set to be higher than that of the following GaN growth, and the feed rate of trimethylgallium is lower than that of the growth procedure. RMS of roughness on the substrate was equal to or less than 1.3 nm, and the substrate whose step condition is excellent can be obtained. | 04-23-2009 |
20100035082 | INTERNAL GEAR PUMP - There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an Al | 02-11-2010 |
20100062558 | Method for producing transparent conductive layer comprising TIO2 and method for producing semiconductor light-emitting element utilizing said method for producing transparent conductive layer - When a p-layer | 03-11-2010 |
20100078649 | Light emitting element and light emitting device - A light emitting element which emits light of a wavelength, includes a substrate which is transparent to the wavelength of emitted light and includes a first surface and a second surface; a semiconductor layer stacked on the first surface; a first electrode which is reflective to the wavelength of emitted light and formed on a surface of the semiconductor layer, wherein electrical resistance of the first electrode in a farthest distance is equal to or smaller than 1Ω; and a second electrode which is reflective to the wavelength of emitted light and formed on the second surface, wherein electrical resistance of the second electrode in a farthest distance is equal to or smaller than 1Ω. | 04-01-2010 |
20100219444 | Manufacturing method of mounting part of semiconductor light emitting element, manufacturing method of light emitting device, and semiconductor light emitting element - A manufacturing method of a mounting part of a semiconductor light emitting element comprising: preparing a semiconductor light emitting element including an electrode which has a surface, and a board which has a surface; forming a plurality of bump material bodies on at least one of the surface of the electrode and the surface of the board by shaping bump material into islands, wherein the bump material is paste in which metal particles are dispersed, a top surface and a bottom surface of the bump material bodies have different areas, and the top surface is practically flat; solidifying the bump material bodies by thermally processing the bump material bodies; and fixing the semiconductor light emitting element and the board through the bumps. | 09-02-2010 |
20100237369 | Light-emitting device - A light-emitting device includes a substrate, a light-emitting element mounted on a first flat surface of the substrate, and a glass sealing member for sealing the light-emitting element, wherein the sealing member is in contact with the first flat surface and a side surface of the substrate and a second flat surface of the surface opposite to the first flat surface is exposed. | 09-23-2010 |
20100244071 | Method of manufacturing led lamp - A method of manufacturing a LED lamp that is formed by sealing a LED element mounted on a substrate with glass, includes a mounting process for mounting the LED element on the substrate, a sealing member preparation process for preparing a glass sealing member that includes a concave portion being capable of housing the LED element, and a sealing process wherein the sealing member is arranged so that a forming surface of the concave portion faces the LED element, the sealing member is bonded to the substrate by thermal compression bonding, and the forming surface of the concave portion is made along the LED element. | 09-30-2010 |