Patent application number | Description | Published |
20100252906 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device including a thin film device unit including a TFT, and a peripheral device unit provided around the thin film device unit and including a semiconductor element, includes a first step of preparing a substrate, a second step of bonding the peripheral device unit directly to the substrate, and a third step of forming the thin film device unit on the substrate to which the peripheral device unit is bonded. | 10-07-2010 |
20100270658 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A method is disclosed for producing a semiconductor device produced by (i) doping hydrogen ions or rare gas ions into a device substrate in which a transfer layer ( | 10-28-2010 |
20110042693 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device ( | 02-24-2011 |
20110241174 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed. | 10-06-2011 |
20120038022 | INSULATING SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - Disclosed is a glass substrate ( | 02-16-2012 |
Patent application number | Description | Published |
20100244136 | SEMICONDUCTOR DEVICE, SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM-INCLUDING SUBSTRATE, AND PRODUCTION METHODS THEREOF - The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics and a reduced wiring resistance. | 09-30-2010 |
20100244185 | SEMICONDUCTOR DEVICE, SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM-INCLUDING SUBSTRATE, AND PRODUCTION METHODS THEREOF - The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics. | 09-30-2010 |
20100283104 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An element portion forming step includes an insulating film forming step of forming an insulating film on a surface of a base layer, a conductive layer forming step of uniformly forming a conductive layer on a surface of the insulating film, and an electrode forming step of patterning the conductive layer to form an electrode. A delamination layer forming step of ion implanting a delamination material into the base layer to form a delamination layer is performed before the electrode forming step. | 11-11-2010 |
20120138923 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - The present invention provides a thin film transistor including an oxide semiconductor layer ( | 06-07-2012 |
20130099227 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Al, In, Zn, and O as constituent atoms. | 04-25-2013 |
20130105788 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE | 05-02-2013 |
20130193430 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22. | 08-01-2013 |
Patent application number | Description | Published |
20110228127 | IMAGE CAPTURING APPARATUS - An image capturing apparatus includes an image sensor having a first pixel group that photoelectrically converts an object image from a first exit pupil region, a second pixel group that photoelectrically converts an object image from a second exit pupil region, and a third pixel group for capturing that photoelectrically converts an object image from overall exit pupil region; a focus detection unit that detects focus information by performing a defocus calculation with use of a first image signal obtained from the first pixel group and a second image signal obtained from the second pixel group; an image processing unit that converts captured image data into an image file for recording and saving; and a data recording unit that records, in association with the image file, signals obtained from the first pixel group and the second pixel group such that the defocus calculation can be performed. | 09-22-2011 |
20120268647 | IMAGE PICKUP APPARATUS AND CONTROL METHOD THEREOF - The image pickup apparatus electrically converts an object image to produce an image signal and includes a first detector detecting a first in-focus position by a phase difference detection method, a second detector detecting a second in-focus position by a contrast detection method using the image signal, and a corrector correcting, based on a difference between the first and second in-focus positions, the first in-focus position for image pickup. A controller instructs the optical apparatus to move the focus lens by a predetermined movement amount when the second in-focus position is detected, receives, from the optical apparatus, information on an actual movement amount of the focus lens in response to the instruction, and instructs again the optical apparatus to move the focus lens with change of the predetermined movement amount when a difference between the predetermined and actual movement amounts exceeds a predetermined value. | 10-25-2012 |