Patent application number | Description | Published |
20080224303 | Power Semiconductor Module - A power semiconductor module with its thermal resistance and overall size reduced. Insulating substrates with electrode metal layers disposed thereon are joined to both the surfaces of a power semiconductor chip by using, for example, soldering. Metal layers are disposed also on the reverse surfaces of the insulating substrates and the metal layers are joined to the heat spreaders by using brazing. Heat radiating fins are provided on the heat radiating surface of at least one of the heat spreaders. The heat radiating side of each of the heat spreaders is covered by a casing to form a refrigerant chamber through which refrigerant flows to remove heat transmitted from the semiconductor chip to the heat spreader. | 09-18-2008 |
20080258252 | CIRCUIT ARRANGEMENT HAVING A FREE-WHEEL DIODE - An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips. | 10-23-2008 |
20080284482 | SEMICONDUCTOR CIRCUIT - A semiconductor circuit for an inverter device, comprising a pulse generator for generating a pulse signal upon receiving the input signal for controlling the high-voltage switching device of the inverter device, a driver circuit for driving the high-voltage switching device, and a signal transfer circuit for transferring the pulse signal generated by the pulse generator to the driver circuit, wherein a wide band-gap semiconductor device is used in the signal transfer circuit | 11-20-2008 |
20080315938 | DRIVING CIRCUIT FOR SWITCHING ELEMENTS - A level shifting circuit, satisfying a requirement of a high tolerated dV/dt level, and a highly reliable inverter circuit, wherein a set pulse signal and a reset pulse signal, both of which are level-shifted to a potential side taking as reference a reference potential of a gate control terminal of a switching terminal, are obtained differentially and integrated, and, in case these pulse signals equal or exceed stipulated integrated values, are transmitted as regular control signals controlling the on/off state. | 12-25-2008 |
20090116197 | METHOD FOR POWER SEMICONDUCTOR MODULE FABRICATION, ITS APPARATUS, POWER SEMICONDUCTOR MODULE AND ITS JUNCTION METHOD - A power semiconductor module includes first and second insulating substrates, a power semiconductor device joined directly or through another element to opposite sides of the first and second insulating substrates and first and second heat spreaders joined with joining material having fluidity upon joining so as to put the first and second insulating substrates between the first and second heat spreaders. When the power semiconductor module is fabricated, the first and second insulating substrates are joined to the first and second heat spreaders, respectively, in the state that weight bearing on joining material is reduced by means of resilient member. | 05-07-2009 |
20090168471 | CIRCUIT DEVICE HAVING A FREE WHEELING DIODE, CIRCUIT DEVICE AND POWER CONVERTER USING DIODES - A circuit device includes at least one switching element and a free wheeling diode connected in parallel to the switching element. The free wheeling diode is made up of a Schottky barrier diode using a semiconductor material having a band gap larger than silicon as its base material and also a silicon PiN diode, which are connected in parallel. The Schottky barrier diode and the silicon PiN diode are provided in the form of separate chips. A circuit system is also provided wherein a diode having a Schottky junction of a compound semiconductor as a rectification element built therein is combined, and a relationship, R | 07-02-2009 |
20100207450 | SWITCHING CIRCUIT AND POWER CONVERTER - The invention provides a switching circuit and a power converter having a built-in power source for a conduction control terminal even if they have a single-arm structure. In the switching circuit having a switching device and a conduction control terminal power source capacitor, a negative terminal of the capacitor is connected to a reference voltage terminal of a main power source and to the gate terminal selectively through a half-bridge circuit and a positive terminal of the capacitor is selectively connected to a positive terminal of the main power source and to a source terminal of the switching device through a half-bridge circuit. The capacitor is charged when the positive terminal is connected to the main power source and discharges when the negative terminal is connected to the gate terminal and the positive terminal is connected to the source terminal and applies voltage to the gate terminal of the switching device. | 08-19-2010 |
20100244092 | POWER SEMICONDUCTOR APPARATUS - A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate on which the first power semiconductor device is mounted, a first heat dissipation metal base on which the first insulated metal substrate is mounted, a second insulated metal substrate on which the second power semiconductor device is mounted, and a second heat dissipation metal base on which the second insulated metal substrate is mounted. | 09-30-2010 |
20100327837 | POWER CONVERTER FOR TRACTION CONTROL AND TRANSPORTATION SYSTEM - The following problem associated with a semiconductor device of silicon or the like having low band gap is solved by temperature estimation using voltage drop in such a semiconductor device having low accuracy and this complicates a circuit for temperature detection suitable for practical use or a configuration for implementing a detection system. A power converter provided with an inverter circuit includes a semiconductor device whose band gap is larger than that of silicon and which has a range in which the temperature coefficient of voltage drop during conduction is positive. The power converter further includes a measurement condition setting circuit. This circuit adjusts the timing of the following measurement values used for temperature estimation at a device temperature estimation circuit to each other so that a measurement value of a voltage measurement circuit and a measurement value of a current measurement circuit become data obtained by measurement at the same time. | 12-30-2010 |
20110080192 | DRIVE CIRCUIT FOR SWITCHING DEVICE - The threshold value for a normally-off junction FET is a low value. Accordingly, in a semiconductor driver circuit using the normally-off junction FET, there have existed such problems as high-accuracy voltage control, high-speed charging into an input capacitor, and misoperations. A semiconductor driver circuit which is the most suitable for the normally-off junction FET is proposed by applying the high-accuracy gate-voltage generation scheme based on a Zener diode, a reduction in the turn-on loss based on a speed-up capacitor, the connection of an inter-gate-source capacitor, and a misoperation-preventing circuit based on the source-terminal optimum implementation scheme. | 04-07-2011 |
20120007533 | POWER CONVERTER AND MOTOR DRIVING DEVICE USING THE SAME - In order to reduce the average power of the ringing noise, the present invention provides a power converter comprising: an arm circuit including a high-voltage side switching device to which a first diode is connected in parallel and a low-voltage side switching device to which a second diode is connected in parallel; and a main power supply connected to a series circuit of the high-voltage side switching device and the low-voltage side switching device, wherein a connecting point between the high-voltage side switching device and the low-voltage side switching device is connected to a load, and a resonant frequency calculated from inductances of wirings of a closed circuit including the first diode, the second diode, and the main power supply and a capacitance across the first diode is different form that calculated from the inductances of the wirings and a capacitance across the second diode. | 01-12-2012 |
20130015799 | Power ConverterAANM Ayano; HidekiAACI HachiojiAACO JPAAGP Ayano; Hideki Hachioji JPAANM Ishikawa; KatsumiAACI HitachinakaAACO JPAAGP Ishikawa; Katsumi Hitachinaka JPAANM Ogawa; KazutoshiAACI HitachiAACO JPAAGP Ogawa; Kazutoshi Hitachi JPAANM Kominami; TsutomuAACI HitachinakaAACO JPAAGP Kominami; Tsutomu Hitachinaka JPAANM Kunihiro; MamiAACI HitachiAACO JPAAGP Kunihiro; Mami Hitachi JP - The present invention provides a power converter which, while ensuring safety, implements control for the flow of a constant current in a specified switching element, more accurately determines the lifetime of a switching element, and reduces the number of temperature detectors. The power converter is provided with a mechanism which causes a brake device to operate or which confirms that a brake mechanism is operating. The power converter supplies current to the d-axis and the q-axis of a rotational coordinate system, within the range of the braking torque of the brake mechanism, and passes the desired current to the desired element. Furthermore, temperature detectors are attached only in chips in sections where a crack readily develops in the upper solder layer or peeling is readily generated in the wire bonding, and in chips where a crack readily develops in the lower solder layer. An accurate lifetime evaluation of a semiconductor module is therefore possible even with a smaller number of temperature detectors. | 01-17-2013 |
20130119912 | Power Conversion Device and Temperature Rise Calculation Method Thereof - A temperature rise of a semiconductor switching element, which is part of a power conversion device such as an inverter, is estimated by an extremely simple method to assess the degradation and remaining lifetime of the semiconductor switching element. | 05-16-2013 |
20130214328 | POWER SEMICONDUCTOR APPARATUS - A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate on which the first power semiconductor device is mounted, a first heat dissipation metal base on which the first insulated metal substrate is mounted, a second insulated metal substrate on which the second power semiconductor device is mounted, and a second heat dissipation metal base on which the second insulated metal substrate is mounted. | 08-22-2013 |
20140042611 | POWER CONVERTER - A power converter including: a plurality of semiconductor devices forming a power conversion circuit; a base section to which the plurality of semiconductor devices are attached; and radiating fins dissipating heat generated from the semiconductor devices into outside air, in the power converter in which the direction of the flow of a refrigerant flowing into the radiating fins changes depending on the operation status of the power conversion circuit, the shape of each radiating fin changes in such a way that the cross-sectional area of a channel of the refrigerant on the outflow side becomes smaller than the cross-sectional area of the channel of the refrigerant on the inflow side in the radiating fins depending on the direction of the flow of the refrigerant. | 02-13-2014 |
20140374794 | POWER SEMICONDUCTOR WITH A SI CHIP AND A WIDEBAND CHIP HAVING MATCHED LOSS AND AREA RATIOS - A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate on which the first power semiconductor device is mounted, a first heat dissipation metal base on which the first insulated metal substrate is mounted, a second insulated metal substrate on which the second power semiconductor device is mounted, and a second heat dissipation metal base on which the second insulated metal substrate is mounted. | 12-25-2014 |