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Robert Beach
ALTADENA, CA US
1. 20090065785 III-nitride power semiconductor device 03-12-20092. 20090001424 III-nitride power device - that includes a Schottky electrode surrounding one of the power electrodes of the device 01-01-2009
3. 20080296621 III-nitride heterojunction device - III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous 12-04-2008
4. 20080274621 III-Nitride semiconductor device with trench structure 11-06-2008
5. 20080248634 ENHANCEMENT MODE III-NITRIDE FET - III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device 10-09-2008