Patent application number | Description | Published |
20080248597 | Methods for determining a dose of an impurity implanted in a semiconductor substrate and an apparatus for same - Methods of determining a total impurity dose for a plasma doping process, and an apparatus configured to determine same. A total ion dose implanted in a semiconductor substrate is directly measured, such as by utilizing a Faraday cup. A ratio of impurity-based ion species to non-impurity-based ion species in a plasma generated by the plasma doping process and a ratio of each impurity-based ion species to a total impurity-based ion species in the plasma are directly measured. The ratios may be directly measured by ion mass spectroscopy. The total ion dose and the ratios are used to determine the total impurity dose. The apparatus includes an ion detector, an ion mass spectrometer, a dosimeter, and software. | 10-09-2008 |
20080284025 | Electrically Conductive Line - The invention includes an electrically conductive line, methods of forming electrically conductive lines, and methods of reducing titanium silicide agglomeration in the fabrication of titanium silicide over polysilicon transistor gate lines. In one implementation, a method of forming an electrically conductive line includes providing a silicon-comprising layer over a substrate. An electrically conductive layer is formed over the silicon-comprising layer. An MSi | 11-20-2008 |
20080299699 | Methods of Forming A Resistance Variable Element - The invention includes methods of depositing silver onto a metal selenide-comprising surface, and methods of forming a resistance variable device. In one implementation, a method of depositing silver onto a metal selenide-comprising surface includes providing a deposition chamber comprising a sputtering target and a substrate to be depositing upon. The target comprises silver, and the substrate comprises an exposed surface comprising metal selenide. Gaseous cesium is flowed to the target and a bombarding inert sputtering species is flowed to the target effective to sputter negative silver ions from the target. The sputtered negative silver ions are flowed to the exposed metal selenide-comprising surface effective to deposit a continuous and completely covering silver film on the exposed metal selenide of the substrate. | 12-04-2008 |
20090120581 | SYSTEMS AND METHODS FOR PLASMA PROCESSING OF MICROFEATURE WORKPIECES - Systems and methods for plasma processing of microfeature workpieces are disclosed herein. In one embodiment, a method includes generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber, measuring optical emissions from the plasma, and determining a parameter of the plasma based on the measured optical emissions. The parameter can be an ion density or another parameter of the plasma. | 05-14-2009 |
20090152629 | METHODS OF SELECTIVELY OXIDIZING SEMICONDUCTOR STRUCTURES, AND STRUCTURES RESULTING THEREFROM - Methods for selectively oxidizing a semiconductor structure include generating a gas cluster ion beam comprising an oxidizing source gas, directing the gas cluster ion beam to a region of a substrate adjacent a conductive line and exposing the region to the gas cluster ion beam including an oxidizing matter. Utilizing the gas cluster ion beam enables selective oxidation of a targeted region at temperatures substantially lower than those of typical oxidation processes thus, reducing or eliminating oxidation of the conductive line. Semiconductor devices including transistors formed using such methods are also disclosed. | 06-18-2009 |
20090283907 | LOW-RESISTANCE INTERCONNECTS AND METHODS OF MAKING SAME - Devices and methods for providing low-resistance interconnects in a semiconductor device are provided. Specifically, one or more embodiments of the present invention relate to disposing a conductive material in a trench without disposing a resistive barrier material between the conductive material and the sidewalls of the trench so that the conductive material takes up the full width of the trench. For example, the trench may be disposed over one or more contacts made of a barrier material such as titanium nitride that also acts as a seed, and the conductive material may be grown on top of the titanium nitride to fill the trench. | 11-19-2009 |
20100219391 | LAYERED RESISTANCE VARIABLE MEMORY DEVICE AND METHOD OF FABRICATION - The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to one embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between two glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a Ge | 09-02-2010 |
20100244158 | SEMICONDUCTOR STRUCTURES RESULTING FROM SELECTIVE OXIDATION - Methods for selectively oxidizing a semiconductor structure include generating a gas cluster ion beam comprising an oxidizing source gas, directing the gas cluster ion beam to a region of a substrate adjacent a conductive line and exposing the region to the gas cluster ion beam including an oxidizing matter. Utilizing the gas cluster ion beam enables selective oxidation of a targeted region at temperatures substantially lower than those of typical oxidation processes thus, reducing or eliminating oxidation of the conductive line. Semiconductor devices including transistors formed using such methods are also disclosed. | 09-30-2010 |
20110014115 | SILVER SELENIDE SPUTTERED FILMS AND METHOD AND APPARATUS FOR CONTROLLING DEFECT FORMATION IN SILVER SELENIDE SPUTTERED FILMS - Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm | 01-20-2011 |
20110095427 | LOW-RESISTANCE INTERCONNECTS AND METHODS OF MAKING SAME - Devices and methods for providing low-resistance interconnects in a semiconductor device are provided. Specifically, one or more embodiments of the present invention relate to disposing a conductive material in a trench without disposing a resistive barrier material between the conductive material and the sidewalls of the trench so that the conductive material takes up the full width of the trench. For example, the trench may be disposed over one or more contacts made of a barrier material such as titanium nitride that also acts as a seed, and the conductive material may be grown on top of the titanium nitride to fill the trench. | 04-28-2011 |
20120154919 | APPARATUSES AND DEVICES FOR ABSORBING ELECTROMAGNETIC RADIATION, AND METHODS OF FORMING THE APPARATUSES AND DEVICES - Photonic nanostructures, light absorbing apparatuses, and devices are provided. The photonic nanostructures include a plurality of photonic nanobars configured to collectively absorb light over an excitation wavelength range. At least two of the photonic nanobars of the plurality have lengths that are different from one another. Each photonic nanobar of the plurality has a substantially small width and a substantially small height relative to the different lengths. A method for forming such may comprise forming a plurality of first photonic nanobars comprising a width and a height that are smaller than a length of the plurality of first photonic nanobars, and forming a plurality of second photonic nanobars comprising a width and a height that are smaller than a length of the second photonic nanobar, wherein the lengths of the plurality of first photonic nanobars and the lengths of the plurality of second photonic nanobars are different from one another. | 06-21-2012 |
20130072006 | Methods of Forming Doped Regions in Semiconductor Substrates - Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant. | 03-21-2013 |
20130118894 | SILVER SELENIDE SPUTTERED FILMS AND METHOD AND APPARATUS FOR CONTROLLING DEFECT FORMATION IN SILVER SELENIDE SPUTTERED FILMS - Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm | 05-16-2013 |
20130288466 | Methods of Forming Doped Regions in Semiconductor Substrates - Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant. | 10-31-2013 |
20140144379 | SYSTEMS AND METHODS FOR PLASMA DOPING MICROFEATURE WORKPIECES - Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece. | 05-29-2014 |
20140197134 | SYSTEMS AND METHODS FOR PLASMA PROCESSING OF MICROFEATURE WORKPIECES - Systems and methods for plasma processing of microfeature workpieces are disclosed herein. In one embodiment, a method includes generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber, measuring optical emissions from the plasma, and determining a parameter of the plasma based on the measured optical emissions. The parameter can be an ion density or another parameter of the plasma. | 07-17-2014 |