Patent application number | Description | Published |
20090099350 | Instrument and method for nucleic acid isolation - According to this invention, an instrument and a method for nucleic acid isolation is realized, whereby it is possible to prevent, for example, adherence of a discharged solution upon dispersion of such solution to the vicinity of a nucleic acid isolation column outlet. | 04-16-2009 |
20090111114 | RNA EXTRACTION METHOD, RNA EXTRACTION REAGENT, AND METHOD FOR ANALYZING BIOLOGICAL MATERIALS - A method to extract RNA with high purity from biological materials containing RNA in a safe, rapid, and simple procedure and a method to analyze it are provided. The procedure includes the steps of mixing a biological material containing RNA with a predetermined concentration of a chaotropic agent and a predetermined concentration of an organic solvent, allowing the mixed solution to contact a nucleic acid-binding solid phase, washing the nucleic-acid binding solid-phase to which RNA is bound, and eluting RNA from the nucleic-acid binding solid-phase having the bound RNA. Furthermore, the obtained RNA is analyzed by reverse transcriptase-polymerase chain reaction (RT-PCR) or the like. | 04-30-2009 |
20090186345 | Instrument and method for nucleic acid isolation - According to the present invention, purified nucleic acids are isolated without the complete removal of components of a washing reagent. Also, nucleic acids are isolated in an elution reagent by allowing a washing reagent comprising at least one component constituting a reaction solution that can be applied to a reaction involving nucleic acids to come into contact with a nucleic-acid-adsorbing solid phase so as to wash the solid phase, separating the washing reagent from the solid phase in a manner such that a certain amount of the washing reagent is allowed to remain in the solid phase, and allowing an elution reagent to come into contact with the nucleic-acid-adsorbing solid phase. | 07-23-2009 |
20090221060 | NUCLEIC ACID ANALYZER - It is an object of the present invention to prevent condensation occurring when reaction solutions in sealed vessels are heated in a nucleic acid analyzer for performing sequential processing in which individual reaction vessels are sequentially fed to a nucleic acid amplification unit in a given cycle. This invention relates to a nucleic acid analyzer including a vessel mounting rack capable of holding the plurality of reaction vessels, wherein the reaction vessel mounted on the vessel mounting rack is heated by an adjacent noncontact heat source and air circulation from the heat source to a reaction vessel upper portion, and a temperature of the reaction vessel upper portion is kept higher than a temperature of a reaction vessel lower portion. With this invention, condensation possibly occurring on the inner wall of the sealed vessel upper portion due to heating during nucleic acid amplification can be prevented, and more accurate nucleic acid analysis is enabled. | 09-03-2009 |
20110015381 | INSTRUMENT AND METHOD FOR COLLECTING NUCLEIC ACIDS - An instrument and a method for conveniently collecting nucleic acids from a biological nucleic acid-containing sample are provided. A nucleic acid-capturing tip having silica-containing solid phases enclosed therein in such a state as being capable of coming into contact with a liquid, wherein the solid phases have a water-flowing regions and the average interval among solid phases in the water-flowing regions is regulated to 25 μm or less. | 01-20-2011 |
Patent application number | Description | Published |
20120193628 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention. | 08-02-2012 |
20120258575 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented. | 10-11-2012 |
20120267623 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device having a transistor including an oxide semiconductor film is disclosed. In the semiconductor device, the oxide semiconductor film is provided along a trench formed in an insulating layer. The trench includes a lower end corner portion and an upper end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, the upper end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the upper end corner portion. | 10-25-2012 |
20120267624 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF - An insulating layer is provided with a projecting structural body, and a channel formation region of an oxide semiconductor layer is provided in contact with the projecting structural body, whereby the channel formation region is extended in a three dimensional direction (a direction perpendicular to a substrate). Thus, it is possible to miniaturize a transistor and to extend an effective channel length of the transistor. Further, an upper end corner portion of the projecting structural body, where a top surface and a side surface of the projecting structural body intersect with each other, is curved, and the oxide semiconductor layer is formed to include a crystal having a c-axis perpendicular to the curved surface. | 10-25-2012 |
20120267696 | SEMICONDUCTOR DEVICE - Stable electric characteristics and high reliability are provided to a miniaturized and integrated semiconductor device including an oxide semiconductor. In a transistor (a semiconductor device) including an oxide semiconductor film, the oxide semiconductor film is provided along a trench (groove) formed in an insulating layer. The trench includes a lower end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the lower end corner portion. | 10-25-2012 |
20120267709 | SEMICONDUCTOR DEVICE - To provide a highly reliable semiconductor device. To provide a semiconductor device which prevents a defect and achieves miniaturization. An oxide semiconductor layer in which the thickness of a region serving as a source region or a drain region is larger than the thickness of a region serving as a channel formation region is formed in contact with an insulating layer including a trench. In a transistor including the oxide semiconductor layer, variation in threshold voltage, degradation of electric characteristics, and shift to normally on can be suppressed and source resistance or drain resistance can be reduced, so that the transistor can have high reliability. | 10-25-2012 |
20120286270 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened. | 11-15-2012 |
20130056742 | MICROCRYSTALLINE SILICON FILM, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive. | 03-07-2013 |
20130069053 | SEMICONDUCTOR DEVICE - To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer. | 03-21-2013 |
20130069054 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device including an oxide semiconductor layer, a conductive layer is formed in contact with a lower portion of the oxide semiconductor layer and treatment for adding an impurity is performed, so that a channel formation region and a pair of low-resistance regions between which the channel formation region is sandwiched are formed in the oxide semiconductor layer in a self-aligned manner. Wiring layers electrically connected to the conductive layer and the low-resistance regions are provided in openings of an insulating layer. | 03-21-2013 |
20130075721 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive films being connected to one of the pair of first conductive films and the other of the pair of first conductive films, respectively; an insulating film over the semiconductor film; and a third conductive film provided in a position overlapping with the semiconductor film over the insulating film. Further, over the semiconductor film, the third conductive film is interposed between the pair of second conductive films and away from the pair of second conductive films. | 03-28-2013 |
20130082254 | SEMICONDUCTOR DEVICE - A highly reliable structure is provided when high-speed driving of a semiconductor device is achieved by improving on-state characteristics of the transistor. The on-state characteristics of the transistor are improved as follows: an end portion of a source electrode and an end portion of a drain electrode overlap with end portions of a gate electrode, and the gate electrode surely overlaps with a region serving as a channel formation region of an oxide semiconductor layer. Further, embedded conductive layers are formed in an insulating layer so that large contact areas are obtained between the embedded conductive layers and the source and drain electrodes; thus, the contact resistance of the transistor can be reduced. Prevention of coverage failure with a gate insulating layer enables the oxide semiconductor layer to be thin; thus, the transistor is miniaturized. | 04-04-2013 |
20130099237 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance. | 04-25-2013 |
20140346508 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive films being connected to one of the pair of first conductive films and the other of the pair of first conductive films, respectively; an insulating film over the semiconductor film; and a third conductive film provided in a position overlapping with the semiconductor film over the insulating film. Further, over the semiconductor film, the third conductive film is interposed between the pair of second conductive films and away from the pair of second conductive films. | 11-27-2014 |
20140370670 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened. | 12-18-2014 |
20150014683 | SEMICONDUCTOR DEVICE - Stable electric characteristics and high reliability are provided to a miniaturized and integrated semiconductor device including an oxide semiconductor. In a transistor (a semiconductor device) including an oxide semiconductor film, the oxide semiconductor film is provided along a trench (groove) formed in an insulating layer. The trench includes a lower end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the lower end corner portion. | 01-15-2015 |
20150060849 | SEMICONDUCTOR DEVICE - To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer. | 03-05-2015 |
20150060853 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention. | 03-05-2015 |
20150084050 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance. | 03-26-2015 |
20150179776 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF - An insulating layer is provided with a projecting structural body, and a channel formation region of an oxide semiconductor layer is provided in contact with the projecting structural body, whereby the channel formation region is extended in a three dimensional direction (a direction perpendicular to a substrate). Thus, it is possible to miniaturize a transistor and to extend an effective channel length of the transistor. Further, an upper end corner portion of the projecting structural body, where a top surface and a side surface of the projecting structural body intersect with each other, is curved, and the oxide semiconductor layer is formed to include a crystal having a c-axis perpendicular to the curved surface. | 06-25-2015 |
20150318368 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened. | 11-05-2015 |
Patent application number | Description | Published |
20140001468 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | 01-02-2014 |
20140110705 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition. | 04-24-2014 |
20140110707 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition. | 04-24-2014 |
20140110708 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V. | 04-24-2014 |
20140152336 | Semiconductor Device and Method for Evaluating Semiconductor Device - A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor. | 06-05-2014 |
20160027924 | Semiconductor Device and Method for Evaluating Semiconductor Device - A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor. | 01-28-2016 |
20160126357 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first insulating layer having a first side wall, an oxide semiconductor layer located on the first side wall, a gate insulating layer located on the oxide semiconductor layer, the oxide semiconductor layer being located between the first side wall and the gate insulating layer, a gate electrode facing the oxide semiconductor layer located on the first side wall, the gate insulating layer being located between the oxide semiconductor layer and the gate electrode, a first electrode located below the oxide semiconductor layer and connected with one portion of the oxide semiconductor layer, and a second electrode located above the oxide semiconductor layer and connected with the other portion of the oxide semiconductor layer. | 05-05-2016 |
Patent application number | Description | Published |
20120059528 | SERVER, CHARGING SERVER, POWER CONSUMPTION CALCULATING SYSTEM, AND COMPUTER PROGRAM PRODUCT - According to an embodiment, a server to which a plurality of power meters each measuring an amount of power consumption of an electric appliance is connected, includes a receiving unit, a first storage unit and a calculating unit. The receiving unit receives a calculation result. The calculation result is calculated based on the amount of power consumption measured by each of the plurality of power meters and each of random numbers generated according to a probability distribution by each of the plurality of power meters. The first storage unit stores therein parameters for generating random numbers. The calculating unit calculates an estimation value of a sum or average of the amounts of power consumption using the calculation results and the parameters. The estimation value is used for determining whether to perform power control. | 03-08-2012 |
20120191387 | INFORMATION PROCESSING DEVICE, POWER CONSUMPTION CALCULATING SYSTEM AND PROGRAM PRODUCT - According to one embodiment, an information processing device includes an obtaining unit, a generating unit, and a transmitting unit. The obtaining unit obtains a power consumption of electrical equipment at least once per unit time. The generating unit generates a plurality of pieces of partial information by using a first power consumption and a first value calculated according to a predetermined rule. The generating unit generates a plurality of pieces of partial information by using a second power consumption and the first value. The first power consumption is obtained at a first period. The second power consumption is obtained at a second period different from the first period. The second power consumption is obtained later than the first power consumption. The transmitting unit transmits the pieces of partial information to a plurality of different storage servers, respectively. | 07-26-2012 |
20120233461 | DATA TRANSMITTING APPARATUS AND DATA AUTHENTICATING METHOD - According to an aspect of the present invention, there is provided a data transmitting apparatus including an authenticator generating unit and a communicating unit. The authenticator generating unit generates a first authenticator by using a first encryption key and generates a second authenticator including a first to an n-th fragment information items by using a second encryption key. The communicating unit transmits a first packet including the first authenticator and the first fragment information item to a destination device and, after the first packet is transmitted, if a response indicating successful authentication is not received from the destination device within a certain period, sequentially transmits an i-th packet (i is an integer being 2 or more and n or less) including the i-th fragment information item to the destination device. | 09-13-2012 |
20120243541 | INFORMATION PROCESSING APPARATUS AND INFORMATION PROCESSING METHOD - An apparatus includes a first processing unit to judge, whether the route information storing unit stores a second next destination address; a second processing unit to judge whether a received packet includes an message authentication code, in the case where the route-information storing unit stores the second next destination address; a third processing unit to judge whether the key-information storing unit stores a second shared key, which is a first shared key shared between the information processing apparatus, in the case where the received packet does not include the message authentication code for the second next destination address; a third packet generating unit to generate a third packet, which includes a next destination and information indicating that the generation of an message authentication code is impossible, in the case where the key information storing unit does not store the second shared key. | 09-27-2012 |
20120245870 | DATA CONVERTING DEVICE, DATA PROCESSING DEVICE, POWER CONSUMPTION PROCESSING SYSTEM AND COMPUTER PROGRAM PRODUCT - According to an embodiment, a data converting device is connected to a power meter configured to add up power consumptions of electrical equipment. The device includes a receiving unit configured to receive power consumptions per predetermined unit time added up by the power meter; and a calculating unit configured to calculate a second sequence to be stored as added up power consumptions in a storage unit from a first sequence containing the power consumptions per unit time received by the receiving unit in time series by using a conversion rule for converting a value of a second element in the second sequence based on a value of a first element in the first sequence. The second sequence has no privacy information and, the second sequence can be used for calculating a total value of the first sequence. | 09-27-2012 |
20120310801 | POWER USAGE CALCULATION SYSTEM - According to an embodiment, in a power usage calculation system, a data management system connected to electric power meters adding up power usage of electric apparatuses and an energy management system are interconnected through a network. Plural pieces of the first partial information are calculated by using the power usage added up by the electric power meters. The plural pieces of the first partial information are stored in storage servers. Each storage server calculates second partial information by using a plurality of pieces of the first partial information of the power usage added up by the electric power meters and transmits the calculated second partial information to the energy management system. The energy management system receives the second partial information respectively transmitted from the storage servers and calculates a total amount of the power usage added up by the electric power meters by using the received second partial information. | 12-06-2012 |
20130246801 | DATA TRANSMITTING DEVICE, DATA RECEIVING DEVICE, AND COMPUTER-READABLE STORAGE MEDIUM - According to one embodiment, the data transmitting device includes a storing unit, an authenticator generating unit, and a communication unit. The storing unit stores accuracy information based on an accuracy of synchronization between a first clock and a second clock. The first clock indicates a current time of the data transmitting device. The second clock indicates a current time of other device to be a destination of a data packet. The authenticator generating unit calculates a first time by adding a predetermined time to the current time of the data transmitting device, calculates a second time by adjusting the first time using the accuracy information, and generates an authenticator using the second time, the data packet, and a predetermined secret key. The communication unit transmits, to the other device, the data packet with the authenticator at a third time obtained by adding the second time to a predetermined time. | 09-19-2013 |
20140095877 | TRANSMITTING APPARATUS, COMMUNICATING SYSTEM - According to an aspect of the embodiment, there is provided a transmitting apparatus, including a data storage, a first key storage, a second key storage, an additional information generating unit, a first authenticator generating unit, a second authenticator generating unit, a third authenticator generating unit, and a packet transmitting unit. | 04-03-2014 |
20140298042 | MEASURING DEVICE, INFORMATION PROCESSOR, KEY MANAGEMENT DEVICE, AND CONSUMPTION CALCULATING SYSTEM - A measuring device has a consumption measurer to measure a consumption of at least one target equipment at every unit time within a predetermined measurement area, a consumption storage to store the measured consumption, a secret key storage to store a secret key shared with a key management device, an encryption key updater to update an encryption key at every predetermined period based on the secret key and time information, an encryption key storage to store the encryption key, an encryptor to generate encrypted data by encrypting the consumption using the encryption key stored in the encryption key storage, an encrypted data storage to store the encrypted data, and a communication controller to control transmission of the encrypted data, which is stored in the encrypted data storage, to a total consumption detecting device. | 10-02-2014 |