Patent application number | Description | Published |
20120316252 | METHOD FOR PRODUCING SYNTHESIS GAS - It is avoided that the sulfur compounds originating from the castable is mixed into produced synthesis gas, the mixed sulfur compounds are separated and collected with carbon dioxide, the collected carbon dioxide is recycled as raw material gas and then the sulfur compounds is directly supplied to the reformer to consequently degrade the reforming catalyst in the reformer by sulfur poisoning. The carbon dioxide separated and collected in the carbon dioxide removal step is introduced into the desulfurization apparatus of the desulfurization step or the sulfur compounds adsorption apparatus before being recycled to the reformer to remove the sulfur compounds. | 12-13-2012 |
20120317833 | METHOD FOR REMOVING SULFUR COMPOUNDS IN CASTABLE - A situation where sulfur compounds originating from a castable are mixed into synthesis gas produced by way of a reforming reaction and the mixed sulfur compounds are separated and collected with carbon dioxide and further fed into a reformer to thereby degrade the reforming catalyst of the reformer by sulfur poisoning is avoided. Purge gas that is steam or steam-containing gas is made to flow into the piping to be used for a synthesis gas production apparatus and dried out to remove the sulfur compounds contained in the castable prior to the start-up of operation of the synthesis gas production apparatus, in order to prevent the sulfur compounds from being released by hot synthesis gas. | 12-20-2012 |
20140018450 | METHOD OF SUPPRESSING METAL CONTAMINATION OF SYNTHESIS GAS PRODUCTION APPARATUS - A synthesis gas production apparatus (reformer) to be used for a synthesis gas production step in a GTL (gas-to-liquid) process is prevented from being contaminated by metal components. A method of suppressing metal contamination of a synthesis gas production apparatus operating for a GTL process that includes a synthesis gas production step of producing synthesis gas by causing natural gas and gas containing steam and/or carbon dioxide to react with each other for reforming in a synthesis gas production apparatus in which, at the time of separating and collecting a carbon dioxide contained in the synthesis gas produced in the synthesis gas production step and recycling the separated and collected carbon dioxide as source gas for the reforming reaction in the synthesis gas production step, a nickel concentration in the recycled carbon dioxide is not higher than 0.05 ppmv. | 01-16-2014 |
20140021094 | METHOD OF REMOVING HEAVY HYDROCARBONS - Heavy hydrocarbons contained in FT off gas of a GTL process are removed by bringing the FT off gas into contact with absorption oil, by introducing the FT off gas into a distillation tower, by cooling the FT off gas or by driving the FT off gas into an adsorbent. A burner tip for heating a reformer tube, using FT off gas as fuel, is prevented from being plugged by the deposition of heavy hydrocarbons contained in the FT off gas. | 01-23-2014 |
Patent application number | Description | Published |
20090141764 | Semiconductor laser and method of making the same - In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is formed over the ridge structure, and a resin layer of photosensitive material is formed to bury the ridge structure. A cured resin portion and an uncured resin portion are formed in the resin layer by performing lithographic exposure of the resin layer, and the uncured resin portion is on the top of the ridge structure. The uncured resin portion is removed to form a dent which is provided on the top of the ridge structure. An overall surface of the cured resin portion and dent is etched to form an etched resin layer. An opening is formed in the etched resin layer by thinning the cured resin portion, and a part of the insulating film is exposed in the opening of the etched resin layer. The part of the insulating film is etched using the etched resin layer as a mask to form an opening in the insulating film. An electrode is formed over the ridge structure and the etched resin layer. | 06-04-2009 |
20100034229 | SEMICONDUCTOR LASER AND METHOD OF MAKING SEMICONDUCTOR LASER - A semiconductor laser includes a first optical confinement layer, a plurality of first quantum wires and buried semiconductor regions disposed on a first area, a plurality of second quantum wires and buried semiconductor regions disposed on a second area, an active layer disposed on a third area, and a second optical confinement layer. The plurality of first quantum wires and the buried semiconductor regions constitute a first distributed Bragg reflector, and the plurality of second quantum wires and the buried semiconductor regions constitute a second distributed Bragg reflector. The third area is disposed between the first area and the second area. The buried semiconductor regions have a refractive index different from the average refractive index of the first quantum wires and the average refractive index of the second quantum wires. These distributed Bragg reflectors form a DBR laser having a cavity length defined by the length of the active layer. | 02-11-2010 |
20100303115 | METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DIODE - A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF | 12-02-2010 |
20110164642 | LASER DIODE WITH RIDGE WAVEGUIDE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - An LD with an improved heat dissipating function in the edge regions is disclosed. The LD provides the core region including the active layer and extending whole of the substrate, and the ridge waveguide structure on the core region that extends in a direction along which the light generated in the active layer is guided. The ridge waveguide structure is buried by a thick resin layer in both sides thereof, but the resin layer is removed in the edge regions close to respective facets of the LD. | 07-07-2011 |
20120094415 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE AND SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes the steps of forming a semiconductor region including a ridge structure on a substrate; forming an insulating film on the semiconductor region; forming a non-photosensitive resin region on the insulating film, forming a first mask that defines a scribe area; forming the scribe area by etching using the first mask; after removing the first mask, forming an insulating layer by etching the insulating film, forming an electrode on the ridge structure and the non-photosensitive resin region to produce a substrate product; forming a scribe line on a surface of the semiconductor region in the scribe area of the substrate product; and cutting the product along the scribe line to form a semiconductor laser bar. | 04-19-2012 |
20120270347 | METHOD OF MANUFACTURING RIDGE-TYPE SEMICONDUCTOR LASER - A method of manufacturing a ridge-type semiconductor laser includes the steps of forming a stacked semiconductor layer including an active layer and an etch stop layer on first and second surfaces of a substrate, etching the stacked semiconductor layer on the second surface, forming a semiconductor portion on the second surface, forming a ridge waveguide portion by etching the stacked semiconductor layer on the first surface to a first depth, forming semiconductor diffraction grating portions by etching the semiconductor portion to a second depth, and forming a diffraction grating section by providing resin diffraction grating portions between the semiconductor diffraction grating portions. The etching of the stacked semiconductor layer on the first surface and the etching of the semiconductor portion are performed simultaneously by using first and second mask portions. | 10-25-2012 |
20120308173 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL MODULATOR AND SEMICONDUCTOR OPTICAL MODULATOR - A method for manufacturing a semiconductor optical modulator includes forming a p-type semiconductor layer on a main surface of a p-type semiconductor substrate; forming a pair of stripe-shaped masks on the p-type semiconductor layer, the stripe-shaped masks extending in a first direction along the main surface of the p-type semiconductor substrate and being spaced apart from each other; simultaneously forming a hole and a pair of stripe structures extending in the first direction by etching the p-type semiconductor layer through the stripe-shaped masks, the pair of stripe structures defining the hole; after removing the stripe-shaped masks, forming a buried layer in the hole; forming a core layer on the buried layer and the stripe structures; and forming an upper cladding layer on the core layer. The buried layer is made of a semiconductor material with a lower optical absorption loss than that of the p-type semiconductor layer. | 12-06-2012 |
20130001643 | METHOD OF MANUFACTURING PHOTODIODE WITH WAVEGUIDE STRUCTURE AND PHOTODIODE - A process to form a photodiode (PD) with the waveguide structure is disclosed. The PD processes thereby reduces a scattering of the parasitic resistance thereof. The process includes steps to form a PD mesa stripe, to bury the PD mesa stripe by the waveguide region, to etch the PD mesa stripe and the waveguide region to form the waveguide mesa stripe. In the etching, the lower contact layer plays a role of the etching stopper. | 01-03-2013 |
20130012001 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching. | 01-10-2013 |
20130071129 | MULTI-CHANNEL OPTICAL WAVEGUIDE RECEIVER - A multi-channel optical waveguide receiver includes an optical input port; an optical branching unit; light-receiving elements having bias electrodes and signal electrodes; optical waveguides being optically coupled between the optical branching unit and the light-receiving elements; capacitors electrically connected between the bias electrodes and a reference potential, the capacitors and the bias electrodes being connected through interconnection patterns; and a signal amplifier including input electrodes. The optical branching unit, the light-receiving elements, the optical waveguides, and the capacitors are formed on a single substrate, the substrate having an edge extending in a first direction. The signal amplifier and the substrate are arranged in a second direction crossing the first direction. The input electrodes and the signal electrodes are arranged along the edge of the substrate. Each of the signal electrodes of the light-receiving elements is electrically connected through a bonding wire to the input electrode. | 03-21-2013 |
Patent application number | Description | Published |
20090028609 | PATTERN FORMING APPARATUS AND PATTERN FORMING METHOD - A pattern forming apparatus includes an intaglio having a pattern of depressions, developing units which form a first potential difference with the intaglio, supply a liquid developer containing charged phosphor particles to the pattern and develop by aggregating the phosphor particles in the depressions, and a transfer roller which forms a second potential difference with the developed intaglio and a glass sheet arranged in opposed relation to each other and sequentially transfers the phosphor particles aggregated in the depressions to the glass sheet. | 01-29-2009 |
20090060577 | PLATE, AND PATTERN FORMING DEVICE AND PATTERN FORMING METHOD USING THE SAME PLATE - A pattern forming device has an original plate for pattern formation having pattern-shaped concave portions in a high-resistance layer. When phosphor particles collected in the concave portions are transferred to a glass plate, an electric field is formed between separate electrodes and a transfer roller, and a high-frequency voltage is applied to a common electrode to apply a voltage between the separate electrodes, hence to generate ultrasonic waves from a piezoelectric layer. | 03-05-2009 |
20100025584 | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels. | 02-04-2010 |
20120007205 | INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure. | 01-12-2012 |
20120228497 | INFRARED IMAGING ELEMENT - An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit. | 09-13-2012 |
Patent application number | Description | Published |
20100239680 | Powder Cosmetic Composition - A powder cosmetic composition having satisfactory usability, cosmetic durability, adhesion properties to the skin, slip properties and smoothness comprising, as powder components (a) and (b):
| 09-23-2010 |
20120171136 | Pressed Powder Cosmetic Composition - To provide a pressed powder cosmetic composition excellent in impact resistance, or a pressed powder cosmetic composition satisfying both impact resistance and good feeling in use. A pressed powder cosmetic composition comprising oily ingredients in an amount of from 1 to 20% by mass and powder ingredients in an amount of from 80 to 99% by mass, wherein the oily ingredients include di(isostearyl/phytosteryl) dimer dilinoleate; or the pressed powder cosmetic composition which contains di(isostearyl/phytosteryl) dimer dilinoleate in a ratio of from 0.5 to 15% by mass in the total amount of the cosmetic composition. | 07-05-2012 |
20130231401 | External Oil-In-Water-Type Skin Preparation - The present invention provides an oil-in-water external skin preparation that has an excellent stability, excellent rough-surface correction effect, and excellent texture. The oil-in-water external skin preparation of the present invention is characterized by comprising (a) an aqueous phase containing resin particles obtained from 100 parts by weight of a vinyl-type monomer and 0.1 to 20 parts by weight of a monomer represented by the below general formula (I),
| 09-05-2013 |