Hishida, JP
Akihiro Hishida, Hitachinaka-Shi JP
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20130188315 | COOLER OF POWER CONVERTING DEVICE FOR RAILROAD VEHICLE - A cooler of a power converting device for a railroad vehicle has heat exchanger tubes or heat radiator fins disposed to enhance the cooling performance of semiconductor devices arranged on an upper level of the multiple semiconductor devices arranged in multiple rows. Temperature detecting elements are arranged to detect temperature of the semiconductor devices arranged on a lower level on a windward side and a leeward side with respect to a traveling wind performing heat exchange with the heat radiator fins, and are arranged to detect temperature of the semiconductor devices arranged on the upper level at a center area thereof. | 07-25-2013 |
Aritaka Hishida, Kakegawa JP
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20140154624 | POSITIVE WORKING PHOTOSENSITIVE MATERIAL - Disclosed herein is a photosensitive composition comprising a heterocyclic thiol compound or tautomeric form thereof and its method of use on a substrate, which may include a chalcophile substrate. | 06-05-2014 |
Hideo Hishida, Tokyo JP
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20100187929 | MOTOR ASSEMBLY WITH COAXIAL SHAFTS - A motor assembly with coaxial shafts is provided which can be produced at low costs and in which a plurality of motors can be disposed with their respective rotary shafts arranged coaxially to one another with high coupling and assembling accuracy in a simple structure. Each motor includes a housing member and ball bearings to rotatably support the rotary shaft and two adjacent motors are fixedly coupled together such that the respective housing members of the adjacent motors are fitted with each other. | 07-29-2010 |
Hitoshi Hishida, Nagoya-Shi JP
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20130065956 | COMPOSITION AND/OR METHOD FOR PREVENTING ONSET AND/OR RECURRENCE OF CARDIOVASCULAR EVENTS - Provided are composition and/or methods useful in preventing onset and/or recurrence of cardiovascular events, especially in patients who have escaped the unstable period after cardiovascular angioplasty or in hyperlipidemia patients who have been treated with HMG-CoA RI. | 03-14-2013 |
20160045469 | COMPOSITION AND/OR METHOD FOR PREVENTING ONSET AND/OR RECURRENCE OF CARDIOVASCULAR EVENTS - Provided are composition and/or methods useful in preventing onset and/or recurrence of cardiovascular events, especially in patients who have escaped the unstable period after cardiovascular angioplasty or in hyperlipidemia patients who have been treated with HMG-CoA RI. | 02-18-2016 |
Iwao Hishida, Toyonaka-Shi JP
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20120194982 | CASING FOR ELECTRONIC DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE - There are provided a casing for an electronic device and an electronic device, which are free from undesirable sticking of dust due to static electricity in a plastic electronic device as well as malfunctions and failures of a built-in device such as a computer; have improved weatherability, impact resistance, and vibration-damping property; and are superior in design properties. | 08-02-2012 |
Iwao Hishida, Toyonaka JP
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20120018092 | PROCESSING METHOD OF METAL PRODUCT SURFACE - A method for processing a surface of a metal product is provided, the method including: a rust prevention method of a metal product surface; a method of reducing the electric conductivity of a metal product surface and removing the feeling of discomfort or fear caused by the discharge of static electricity; and a method of preventing one from suffering burns when one carelessly touches a heated metal product by providing adiabaticity to a metal product surface. | 01-26-2012 |
Iwao Hishida, Osaka JP
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20120093683 | METHOD AND DEVICE FOR CLEANING AIR - The present invention is to provide an air cleaning method and device that realize sufficient purification of polluted air, high-efficiency removal of germs or the like from polluted air, and has a relatively simplified structure. | 04-19-2012 |
Misa Hishida, Kanagawa JP
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20150110516 | IMAGE FORMING APPARATUS - An image forming apparatus includes an apparatus body including an image forming unit that forms an image; an opening/closing member that is openable or closeable with respect to a portion of an external surface of the apparatus body; and an absorption member disposed on the opening/closing member at a side facing the image forming unit, the absorption member absorbing sound while facing a portion of the image forming unit in a state where the opening/closing member is closed with respect to the apparatus body. | 04-23-2015 |
20160069481 | FEED-CABLE RETAINING STRUCTURE AND IMAGE FORMING APPARATUS INCLUDING THE SAME - A feed-cable retaining structure retains a feed cable that supplies electric power. The feed-cable retaining structure includes a support member, retaining members, and an adjusting member. The support member supports the feed cable in an insulating manner. The retaining members support the feed cable in an insulating manner at predetermined positions along a longitudinal direction of the feed cable. Each retaining member includes two or more elements that retain the feed cable so as to sandwich the feed cable in a width direction. The adjusting member is located at a position shifted from a middle point between the adjacent retaining members toward one of the adjacent retaining members, the position including a position of the one of the adjacent retaining members, and adjusts an insulating gap between the feed cable and the support member by separating the feed cable from the support member. | 03-10-2016 |
Mitsuoki Hishida, Gifu JP
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20080212036 | Projection Type Color Projector - A projection type color projector apparatus comprising: a laser light source configured to emit laser beams of three colors, red, green, and blue, in accordance with an image signal for projecting a color image on a screen; and a color image generating unit configured to generate the color image based on the laser beams, among spot diameters of the laser beams of three colors making up each pixel of the color image, a spot diameter of one laser beam being different from a spot diameter of another laser beam. | 09-04-2008 |
Mitsuoki Hishida, Kaizu-Shi JP
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20130240038 | PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF - A photovoltaic device comprises a microcrystalline silicon layer, wherein the microcrystalline silicon layer, when a maximum value of a crystallinity Xc along a film thickness direction is scaled to 1, shows increasing tendency of the crystallinity Xc along the film thickness direction, and has a high-nitrogen-concentration region (region a) of higher nitrogen concentration than other regions in the microcrystalline silicon layer in a range of the film thickness direction where the crystallinity Xc is 0.75 or more. | 09-19-2013 |
Mitsuoki Hishida, Kaidu-Shi JP
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20080316373 | PROJECTION TYPE IMAGE DISPLAY DEVICE - A beam modulated by a video signal scans a projected region. A spot size of the beam in the projected region is set to be smaller than a width of one pixel in a direction vertical to a scanning direction. A group of pixels disposed in the scanning direction is scanned by the beam a plurality of times to display one screen. A scanning position of the beam with regard to the group of the pixels is shifted in the direction vertical to the scanning direction for every scanning turn to display one screen. | 12-25-2008 |
Motoki Hishida, Utsunomiya-Shi JP
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20160129489 | A WIRE ROD HAVING TENSILE STRENGTH OF 950 TO 1600MPa FOR MANUFACTURING A STEEL WIRE FOR A PEARLITE STRUCTURE BOLT, A STEEL WIRE HAVING TENSILE STRENGTH OF 950 TO 1600MPa FOR A PEARLITE STRUCTURE BOLT, A PEARLITE STRUCTURE BOLT, AND MANUFACTURING METHOD FOR THE SAME - A wire rod having a tensile strength of 950 to 1600 MPa for manufacturing a steel wire for a pearlite structure bolt according to the present invention includes a predetermined chemical composition and is manufactured by hot rolling and then direct isothermal transformation treating, in which when an amount of C in terms of mass % is indicated as | 05-12-2016 |
Motoki Hishida, Saitama JP
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20090087682 | METHOD FOR PRODUCING QUASI-CRYSTALLINE PARTICLE DISPERSED ALLOY CLAD MATERIAL, METHOD FOR PRODUCING QUASI-CRYSTALLINE PARTICLE DISPERSED ALLOY BULK MATERIAL, QUASI-CRYSTALLINE PARTICLE DISPERSED ALLOY CLAD MATERIAL, AND QUASI-CRYSTALLINE PARTICLE DISPERSED ALLOY BULK MATERIAL - To provide a method for producing a quasi-crystalline particle dispersed alloy clad material which can be formed into a thick plate or a member for a structure having a specific shape, in particular, a complicated shape while maintaining quasi-crystalline particles, and can be enhanced in strength when used as a member for a structure, in particular, in strength in a high temperature environment. According to the method for producing a quasi-crystalline particle dispersed alloy clad material | 04-02-2009 |
Satoko Hishida, Nagoya-Shi JP
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20120222602 | SEWING MACHINE, STITCH DATA GENERATING DEVICE AND STITCH DATA GENERATING PROGRAM - A sewing machine which forms stitches on a first object to be sewn based on stitch data, includes an imaging unit which images an outline of an upper cloth as the first object onto a lower cloth as a second object, obtaining image data, an outline calculation unit which calculates the outline of the upper cloth from the image data obtained by the imaging unit, a determination unit which determines a stitch-forming region for sewing the upper cloth onto the lower cloth based on the outline of the upper cloth calculated by the outline calculation unit, and a stitch data generating unit which generates stitch data for the stitch-forming region determined by the determination unit. | 09-06-2012 |
20120239180 | SEWING DATA CREATION APPARATUS, SEWING DATA CREATION METHOD, AND COMPUTER PROGRAM PRODUCT - A sewing data creation apparatus includes an area specification portion that specifies at least one area in which a plurality of stitches are to be formed and a sewing data creation portion that creates sewing data for forming the plurality of stitches in each of the specified at least one area and for forming an overlapping portion in a case where the specified at least one area includes a first area and a second area. The overlapping portion is a region in which at least one of the first area and the second area is enlarged in a direction that extends across a boundary line, such that a portion of the plurality of stitches to be formed in the first area is one of intersected and overlapped by a portion of the plurality of stitches to be formed in the second area. | 09-20-2012 |
Shunichi Hishida, Tsukuba-Shi JP
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20130043213 | METHOD FOR PRODUCING SINGLE-CRYSTAL DIAMOND MOVABLE STRUCTURE - The utilization of single crystal diamond in a nano- or micro-machine (N/MEMS) device is difficult, and there has been no report on such utilization. The reason for this resides in that it is difficult to grow single crystal diamond on an oxide which is a sacrifice layer. In a conventional technique, a cantilever or the like is produced by forming polycrystalline diamond or nanodiamond on an oxide as a sacrifice layer, but the mechanical performance, vibration characteristics, stability, and reproducibility of the produced cantilever or the like are unsatisfactory. In the present invention, utilizing the fact that the high concentration ion-implanted region in a diamond substrate | 02-21-2013 |
Tadashi Hishida, Sakai-Shi JP
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20140083067 | MOWER - To provide a mower with which a mowing cord can be kept in an appropriate protruding state, in a mower in which a mowing cord | 03-27-2014 |
Tadashi Hishida, Osaka JP
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20090090033 | Snow-plowing apparatus - A snow-plowing apparatus provided with a snow-removing member detachably attached to an end of a holding rod of a hand-pushed mower, in which an engine and a wheel are attached to a frame, having a detachable rotation transmitting portion, to which a mowing blade is attached and rotational driving force of an engine is transmitted, on the end of the holding rod extending from the engine forward and downward. The snow-removing member is provided with a snowplow rotating body rotated around a horizontal axis through the rotation transmitting portion to plow and shoot the snow. The snowplow rotating body is composed of three short rotating bodies. Each of the short rotating bodies has four snow-plowing blades disposed in peripheral direction with a predetermined pitch. And, the snowplow rotating body is composed of the three short rotating bodies mounted on a shaft body as the snow-plowing blades are dislocated one another in the peripheral direction. | 04-09-2009 |
20090320429 | Mower - A mower carried on shoulders or back to be used. A bowl-shaped contact member is disposed under a rotating body driven to rotate around a vertical axis as to be freely rotate around the axis. And, a bottom wall face portion of the bowl-shaped contact member has a flat face at right angles with the axis on a lower face. And, the bowl-shaped contact member has a curved face portion connecting a cylindrical peripheral wall face portion, of which center is the axis, and the bottom wall face portion. | 12-31-2009 |
20130074376 | SNOW-PLOWING APPARATUS - A snow-plowing apparatus constructed as that a snowplow rotating member having a water wheel type rotating body placed on a central position and screw type rotating bodies each of which is placed respectively as to neighbor the water wheel type rotating body on the left side and the right side, is provided, the rotating member is rotated around a horizontal axis and having a housing member set as to surround near a rear portion of the rotating member, the snow is plowed in the direction of the horizontal axis and moved to the central position by the screw type rotating bodies, and the snow gathered on the central position is shot upward by the water wheel type rotating body. | 03-28-2013 |
Takeshi Hishida, Kanagawa JP
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20100164103 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer composed of one of GaAs based semiconductor, InP-based semiconductor, and GaN-based semiconductor; a first silicon nitride film that is provided on the semiconductor layer, and of which an end portion is in contact with a surface of the semiconductor layer; a protective film that is composed of one of polyimide and benzocyclobutene, and is provided on the semiconductor layer and the first silicon nitride film, the protective film covering the end portion of the first silicon nitride film; and a first metallic layer that is composed of one of titanium, tantalum and platinum, and is continuously provided from a first portion located between the semiconductor layer and the protective film to a second portion located between the end portion of the first silicon nitride film and the protective film, the first metallic layer being in contact with the surface of the semiconductor layer and a surface of the end portion of the first silicon nitride film. | 07-01-2010 |
20100164112 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer, an electrode pad that is composed of Au and is provided on the semiconductor layer, a silicon nitride film provided on the semiconductor layer and the electrode pad so that an end portion of the silicon nitride film is located, and a metal layer that contacts a part of a surface of the electrode pad and the end portion of the silicon nitride film and is provided so that another part of the surface of the electrode pad is exposed, the metal layer including any of Ti, Ta and Pt. | 07-01-2010 |
20100193894 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip, and a guard ring made of an electrically conductive material and arranged between electrodes on the semiconductor chip and side edges of the semiconductor chip, the guard ring being divided by isolating sections on the semiconductor chip. | 08-05-2010 |
Tatsuhiro Hishida, Fukui-Shi JP
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20130041125 | AMORPHOUS POLYESTER RESIN, BINDER RESIN FOR TONER FOR ELECTROSTATIC IMAGE DEVELOPMENT AND AMORPHOUS POLYESTER RESIN PRODUCTION METHOD - The invention provides an amorphous polyester resin that can sufficiently achieve the reciprocal performance properties of hot offset resistance and cold offset resistance, which is a major issue for a toner for electrostatic image development, while allowing adequate blocking resistance to be obtained, as well as a binder resin for toner for electrostatic image development, and an amorphous polyester resin production method, the amorphous polyester resin being obtained by reaction between a polybasic carboxylic acid compound and a polyhydric alcohol, wherein the polybasic carboxylic acid compound comprises (a) the reaction product between an aromatic polybasic carboxylic acid compound and a C2-4 glycol at 60 mol % or greater based on the total amount of the polybasic carboxylic acid compound, and the amorphous polyester resin has a glass transition point of 55° C. to 75° C. and a weight-average molecular weight of 10,000 to 50,000. | 02-14-2013 |
Tomoaki Hishida, Saitama JP
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20130011921 | METHOD FOR PRODUCTION OF ARTIFICIAL PLURIPOTENT STEM CELL - Disclosed is a method for producing an iPS cell having a very similar gene expression pattern to that of an ES cell with high efficiency. Specifically disclosed is a method for producing an artificial pluripotent stem cell (an iPS cell), which comprises the steps of: introducing a pluripotency-inducing factor comprising at least an Myc family gene or an Myc family protein into a somatic cell; and culturing the somatic cell in the presence of a sirtuin inhibitor and/or a poly-ADP ribose polymerase (PARP) inhibitor. | 01-10-2013 |
Tomoko Hishida, Nagoya-Shi JP
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20150099142 | SINTERED OXIDE COMPACT AND CIRCUIT BOARD USING SAME - Provided is a sintered oxide compact that has high electric conductivity and a small B-value (temperature coefficient), and is suitable for use as an electrically conductive material, and a circuit board that uses the sintered oxide compact. The sintered oxide compact is represented by a composition formula: REaCobNicOx (where RE represents a rare earth element, a+b+c=1, and 1.3≦x≦1.7), the sintered oxide compact includes a perovskite phase with a perovskite-type oxide crystal structure, and the a, b, and c satisfy the following relationships: | 04-09-2015 |
Tomoo Hishida, Kamakura Kanagawa JP
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20150263024 | SEMICONDUCTOR MEMORY - A semiconductor memory includes a memory cell region that includes multiple memory cells stacked above a semiconductor substrate, first and second dummy regions on opposite sides of the memory cell region, each dummy region including multiple dummy cells stacked above the semiconductor substrate, and a wiring that electrically connects dummy cells of the first and second dummy regions that are at a same level above the semiconductor substrate. | 09-17-2015 |
Tomoo Hishida, Yokohama-Shi JP
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20100172189 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device includes: a memory string including a plurality of memory cells connected in series; a first selection transistor having one end connected to one end of the memory string; a first wiring having one end connected to the other end of the first selection transistor; a second wiring connected to a gate of the first selection transistor. A control circuit is configured to boost voltages of the second wiring and the first wiring in the erase operation, while keeping the voltage of the first wiring greater than the voltage of the second wiring by a certain potential difference. The certain potential difference is a potential difference that causes a GIDL current. | 07-08-2010 |
20100214838 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device includes a control circuit performing an erase operation to erase data from a selected one of memory transistors. The control circuit applies a first voltage to the other end of selected one of selection transistors, causes the selected one of the selection transistors to turn on, and causes any one of the memory transistors to turn on that is closer to the selection transistor than the selected one of the memory transistors. The control circuit also applies a second voltage lower than the first voltage to a gate of the selected one of the memory transistors. Such a potential difference between the first voltage and the second voltage causing a change in electric charges in the electric charge storage layer. | 08-26-2010 |
20100238732 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - When a data erase operation is performed in one memory cell block, a first voltage is applied to one source line selected from m source lines in the one memory cell block. A second voltage equal to a voltage of the source lines before the data erase operation begins is applied to the other source lines. Then, after a certain time delay from application of the first voltage, a third voltage smaller than the first voltage is applied to a third conductive layer of a source-side selection transistor connected to a selected source line. Then, a hole current is produced near a third gate insulation layer due to a potential difference between the first and third voltage. A fourth voltage is applied to one of first conductive layers connected to one of the memory transistor to be erased. The other first conductive layers are brought into a floating state. | 09-23-2010 |
20110013454 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprises: a plurality of first memory strings; a first select transistor having one end thereof connected to one end of the first memory strings; a first line commonly connected to the other end of a plurality of the first select transistors; a switch circuit having one end thereof connected to the first line; and a second line commonly connected to the other end of a plurality of the switch circuits. The switch circuit controls electrical connection between the second line and the first line. | 01-20-2011 |
20120069655 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A memory string is configured by a plurality of memory transistors and a spare memory transistor connected in series. Word lines are connected to gates of the memory transistors. A spare word line is connected to a gate of the spare memory transistor. The memory string comprises a first semiconductor layer, a charge storage layer, a plurality of first conductive layers, and a second conductive layer. The first semiconductor layer extends in a perpendicular direction with respect to a substrate. The charge storage layer surrounds a side surface of the first semiconductor layer. The plurality of first conductive layers surround a side surface of the first semiconductor layer with the charge storage layer interposed therebetween, and function as the word lines. The second conductive layer surrounds a side surface of the first semiconductor layer with the charge storage layer interposed therebetween, and functions as the spare word line. | 03-22-2012 |
20120218821 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device includes: a memory string including a plurality of memory cells connected in series; a first selection transistor having one end connected to one end of the memory string; a first wiring having one end connected to the other end of the first selection transistor; a second wiring connected to a gate of the first selection transistor. A control circuit is configured to boost voltages of the second wiring and the first wiring in the erase operation, while keeping the voltage of the first wiring greater than the voltage of the second wiring by a certain potential difference. The certain potential difference is a potential difference that causes a GIDL current. | 08-30-2012 |
20130003433 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises: a semiconductor substrate; a plurality of memory units provided on the semiconductor substrate and each including a plurality of memory cells that are stacked; and a plurality of bit lines formed above each of a plurality of the memory units aligned in a column direction, an alignment pitch in a row direction of the plurality of bit lines being less than an alignment pitch in the row direction of the memory units, and an end of each of the memory units aligned in the column direction being connected to one of the plurality of bit lines formed above the plurality of the memory units aligned in the column direction. | 01-03-2013 |
20140291798 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises: a semiconductor substrate; a plurality of memory units provided on the semiconductor substrate and each including a plurality of memory cells that are stacked; and a plurality of bit lines formed above each of a plurality of the memory units aligned in a column direction, an alignment pitch in a row direction of the plurality of bit lines being less than an alignment pitch in the row direction of the memory units, and an end of each of the memory units aligned in the column direction being connected to one of the plurality of bit lines formed above the plurality of the memory units aligned in the column direction. | 10-02-2014 |
20150263030 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises: a semiconductor substrate; a plurality of memory units provided on the semiconductor substrate and each including a plurality of memory cells that are stacked; and a plurality of bit lines formed above each of a plurality of the memory units aligned in a column direction, an alignment pitch in a row direction of the plurality of bit lines being less than an alignment pitch in the row direction of the memory units, and an end of each of the memory units aligned in the column direction being connected to one of the plurality of bit lines formed above the plurality of the memory units aligned in the column direction. | 09-17-2015 |
Tomoo Hishida, Kanagawa JP
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20140286095 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A non-volatile semiconductor memory device includes first through third memory strings, a first word line group shared by first and second memory strings and a second word line group shared by second and third memory strings, the first and second word line groups extending in a first direction and disposed adjacent to each other in a second direction that is perpendicular to the first direction. The first word line group includes laminated first word lines with each upper first word line extending in the first direction less than the first word line directly below, and the second word line group includes laminated second word lines with each upper second word line extending in the first direction less than the second word line directly below. | 09-25-2014 |
Tomoo Hishida, Kanagawa-Ken JP
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20130248975 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD - A non-volatile semiconductor memory device includes a peripheral circuit having multilayer wirings. Above this peripheral circuit, a plurality of memory strings is formed. The memory strings include a plurality of memory cells and a back gate transistor connected in series. Multiple back gate layers are formed to function as a control electrode of the back gate transistor. A first connection part composed of semiconductor films connects a lower surface of one of the back gate layers and an upper surface of the uppermost wiring layer of the multilayer wirings, and a barrier metal film is disposed above the uppermost wiring layer. | 09-26-2013 |
20130250676 | SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device has a nonvolatile storage region, a voltage generating circuit that generates an operational voltage for the storage region, and a control circuit that sends the voltage generated by the voltage generating circuit to the storage region. The voltage generating circuit has a transistor, a first resistance element, a second resistance element, and a comparator. The first resistance element and the second resistance element have wiring structure for resistance. The resistance wiring in the wiring structure has the same line width as the finest line width in the wiring formed in the storage region. | 09-26-2013 |
20140061766 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device, includes: a stacked body including a plurality of electrode layers stacked alternately with a plurality of insulating films; a plurality of first channel body layers; a memory film; a plurality of selection gates; a second channel body layer connecting to each of the plurality of first channel body layers; a gate insulating film; and a first interconnect electrically connected to at least one of the plurality of electrode layers. The stacked body has a through-hole communicating from the upper surface of the stacked body to the lower surface of the stacked body outside a cell region. And the first interconnect is drawn out through the through-hole from the upper surface side of the stacked body to the lower surface side of the stacked body. | 03-06-2014 |
Tomoo Hishida, Kamakura JP
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20150138886 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE, AND MEMORY SYSTEM - A non-volatile semiconductor storage device includes an memory cell array including first and second blocks, each of which includes a plurality of memory strings each having n (n: natural number) memory cells, and a optionally a peripheral circuit for controlling the memory cell array. In this non-volatile semiconductor storage device, n signal lines are arranged in the first block, and m (n>m, m: natural number) signal lines are arranged in the second block, such that the second block size is smaller than the first block size. | 05-21-2015 |
Toshihiro Hishida, Yokohama-Shi JP
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20110113216 | INFORMATION PROCESSING APPARATUS - An information processing apparatus includes: a ROM for storing a program therein; a RAM for temporarily storing therein the program read from the ROM; a program execution unit that is adapted to read and execute the program from the ROM or the RAM; a memory management unit that translates a virtual address output by the program execution unit to a physical address of the ROM or the RAM; a page table storage unit for storing therein a page table which is referred to by the memory management unit, and in which mapping data of a virtual address with a physical address of the ROM or the RAM corresponding to the virtual address is stored; a detection unit that detects change of an event in the information processing apparatus; an operation switching unit that is adapted to instruct, when the detection unit detects the change of the event during a ROM-operation in which the program execution unit reads the program from the ROM, switching from the ROM-operation to a RAM-operation in which the program execution unit reads the program from the RAM; and a page table updating unit that updates the page table which is referred to by the memory management unit, depending on the instruction of the operation switching unit. | 05-12-2011 |
Wakayuki Hishida, Tokyo JP
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20150293868 | MANAGEMENT METHOD FOR COMPUTER SYSTEM, COMPUTER SYSTEM, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - A management system according to an example of the invention selects a standby combination candidate of an arrangement position candidate of a standby computer and an arrangement position candidate of a standby I/O adapter. The management system specifies a plurality of active combinations of an arrangement position of an active computer and an arrangement position of an active I/O adapter. The management system selects a switch method applicable between the standby combination candidate and each of the plurality of active combinations from a plurality of switch methods. The management system determines a priority of the selected switch method by referring to priority information associating each of the plurality of switch methods and the priority. The management system evaluates the standby combination candidate based on the determined priority of the selected switch method. | 10-15-2015 |
Yasuyuki Hishida, Hitachi JP
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20080226218 | Collision detection optical fiber sensor - An optical fiber | 09-18-2008 |
20090183578 | CABLE-TYPE LOAD SENSOR - A cable-type load sensor having an advantage in layout and being capable of sensing the load precisely is provided. The cable-type load sensor comprises a linear member composed of electrically conductive rubber and having a hollow part extending in the longitudinal direction at the central part of the cross section, and a cladding layer composed of the same kind of rubber material as the linear member and covering the circumference on the linear member. | 07-23-2009 |
Yasuyuki Hishida, Tokyo JP
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20120014637 | Shock detection optical fiber sensor - A shock detection optical fiber sensor includes: a plastic fiber; a corrugated plate having a plurality of protrusions arranged in the longitudinal direction of the plastic optical fiber and formed to oppose to the plastic optical fiber; a mold plate covering the plastic optical fiber and the corrugated plate; a light emitting element connected to one end of the plastic optical fiber; and a light receiving element connected to the other end of the plastic optical fiber. | 01-19-2012 |
Yasuyuki Hishida, Ibaraki-Ken JP
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20090322107 | VEHICLE BUMPER STRUCTURE - In a vehicle bumper structure, an optical fiber sensor ( | 12-31-2009 |
Yu Hishida, Aichi-Ken JP
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20100109300 | Garnish - A garnish includes a garnish body which covers a folded air bag and a locking portion which is inserted to be locked in a mounting hole in a mounting base on a vehicle body. The locking portion holds the garnish body which is pressed by the air bag when the air bag is inflated to move so as to form a projecting space for the air bag. | 05-06-2010 |
Yuji Hishida, Osaka JP
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20090126788 | SOLAR CELL AND SOLAR CELL MODULE INCLUDING THE SAME - Provided is a solar cell in which a linear n finger electrode and a linear p finger electrode are alternately arranged on a projection plane parallel to a main surface of a substrate, and which is arranged in a predetermined arrangement direction, including an n-side bus bar electrode connected to the n finger electrode and insulated from the p finger electrode and a p-side bus bar electrode connected to the p finger electrode and insulated from the n finger electrode. The n-side bus bar electrode and the p-side bus bar electrode are provided on a same main surface side of the substrate, intersect with the n finger electrode and the p finger electrode respectively on the projection plane, and have a slope angle relative to the predetermined arrangement direction. | 05-21-2009 |
20090183759 | SOLAR CELL MODULE - To suppress a decrease in power collection efficiency, provided is a solar cell module including; first and second solar cells arranged in a first direction; and a wiring member electrically connecting the first and second solar cells. In the solar cell module, the first and second solar cells each include a light-receiving surface receiving light, a back surface provided on the opposite side of the light-receiving surface, and p-side and n-side electrodes formed on the back surface; the wiring member is connected to the n-side electrode of the first solar cell at a first connecting point, and connected to the p-side electrode of the second solar cell at a second connecting point; and, in a planar view of the back surface, the first and second connecting points are located on a line intersecting with the first direction. | 07-23-2009 |
20120325286 | SOLAR CELL MODULE - A solar cell module includes solar cells and a wiring member connecting the solar cells. At least one side portion of the wiring member is bonded to a portion of a first principal surface of the solar cell where both first and second electrodes are provided, by adhesive resin layer. A first portion of the resin adhesive layer, which is located between the at least one side portion of the wiring member and the first electrode is thinner than a second portion of the adhesive resin layer, which is located between the at least one side portion of the wiring member 11 and the second electrode such that the at least one side portion of the wiring member is electrically connected with the first electrode while being electrically insulated from the second electrode. | 12-27-2012 |
20130247970 | SOLAR CELL AND METHOD FOR MANUFACTURING SOLAR CELL - A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x. | 09-26-2013 |
Yuji Hishida, Kobe-Shi JP
Patent application number | Description | Published |
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20130186456 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench. | 07-25-2013 |
Yuji Hishida, Osaka City JP
Patent application number | Description | Published |
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20080276981 | SOLAR CELL MODULE - The first and second solar cells are arranged to be adjacent to each other in the arrangement direction. On the back surface of the first solar cell, the multiple first n-type regions are formed in the arrangement direction and the multiple first p-type regions are formed between each of the multiple first n-type regions. On the back surface of the second solar cell, the multiple second p-type regions are formed in the arrangement direction and the multiple second n-type regions are formed between each of the multiple second p-type regions. Each of the multiple first n-type regions and each of the multiple second p-type regions are formed on the back surface in a substantially straight line. Each of the multiple first p-type regions and each of the multiple second n-type regions are formed on the back surface in a substantially straight line. | 11-13-2008 |
20090056804 | SOLAR CELL - A solar cell having a through-hole electrode with an improved manufacturing yield is provided. The solar cell includes a through-hole passing through a photoelectric converter from a light-receiving surface to the back surface of the photoelectric converter. One end portion on the back surface side of the through-hole branches off in multiple back surface side branch portions and the back surface side branch portions open on the back surface of the photoelectric converter. | 03-05-2009 |
20090314346 | SOLAR CELL AND MANUFACTURING METHOD OF THE SOLAR CELL - A p type amorphous silicon layer is stacked, by a CVD method, on a main surface of an n type single-crystalline silicon substrate; an n type amorphous silicon layer is stacked, by the CVD method, on a surface opposite to the surface on which the p type amorphous silicon layer is stacked; and, by using a laser ablation processing method, through-holes are formed in the n type single-crystalline silicon substrate, the p type amorphous silicon layer, and the n type amorphous silicon layer. Subsequently, an insulating layer is formed on an inner wall surface of each of the through-holes, and then a conductive material is filled therein. | 12-24-2009 |
20130037079 | SOLAR CELL MODULE - A solar cell module includes: two solar cells, each including: a first main face and a second main face; a first electrode on the first main face, comprising a bus-bar electrode having at least one of an opening portion, notch portion, and gap portion; and a second electrode on the first or second main face having a polarity opposite to that of the first electrode; a wiring member that electrically connects the first electrode of one solar cell to the second electrode of another solar cell; and an electrically conductive connection layer that contacts the wiring member and the first main face. | 02-14-2013 |
Yuko Hishida, Tomi-Shi JP
Patent application number | Description | Published |
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20100289860 | INKJET PRINTER AND PRINTING METHOD USING THE SAME - An ink jet printer includes a medium supporter to support a print medium. A print head is configured to eject ink droplets toward the print medium. An ultraviolet light irradiation device is configured to irradiate the print medium with ultraviolet light to cure ink deposited on the print medium. On a carriage, the print head and the ultraviolet light irradiation device are mounted to face the medium supporter. The carriage is reciprocally movable relative to the print medium in a first direction and movable relative to the print medium in a second direction perpendicular to the first direction. The ultraviolet light irradiation device is arranged on a side in the first direction of the print head. The print head is arranged to project toward an upstream side of a feeding direction in the second direction by a predetermined length relative to the ultraviolet light irradiation device. | 11-18-2010 |
20110221818 | INKJET PRINTER AND METHOD FOR PRINTING - An inkjet printer includes a guide rail that faces a medium support member and extends in a scanning direction. A head device includes a carriage movable in the scanning direction along the guide rail. A printer head is mounted on the carriage and is configured to discharge an ink toward a printing medium. An ultraviolet radiation device is mounted on the carriage and is configured to output an ultraviolet radiation toward the printing medium thereby curing the ink that has adhered onto the printing medium after being discharged from the printer head. The ultraviolet radiation device is arranged in the carriage on a side of the printer head in the scanning direction. An intensity controller is configured to control an intensity of the ultraviolet radiation output from the ultraviolet radiation device depending on a direction of movement of the carriage. | 09-15-2011 |
Yuko Hishida, Tomi-City JP
Patent application number | Description | Published |
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20090219342 | INKJET PRINTER - An inkjet printer including a UVLED unit which emits ultraviolet light to a print medium supported on a supporting table to cure UV ink droplets deposited on the print medium. The inkjet printer further includes a controller which adjust the light quantity of ultraviolet light, emitted from the UVLED unit to the UV ink droplets deposited on the print medium, from a light quantity for temporary curing to a light quantity for final curing, and a control unit capable of selecting between a two-stage curing mode in which UV ink droplets deposited on the print medium are temporarily cured ant are then finally cured and a single-stage curing mode in which UV ink droplets are finally cured by an irradiation with ultraviolet light at one time by means of the UVLED unit and the controller. | 09-03-2009 |
20090244157 | INKJET PRINTER AND PRINTING METHOD - An inkjet printer including an inkjet head unit having inkjet heads for ejecting UV inks, an UVLED unit having a UVLED for emitting ultraviolet light, and a control unit for controlling the inkjet head unit and the UVLED unit. The control unit controls the inkjet head unit and the UVLED unit to move in the scanning direction, controls the inkjet heads to eject UV inks, and controls the UVLED to emit ultraviolet light of a first light quantity. After that, the control unit controls the inkjet head unit and the UVLED unit to move in the direction opposite to the scanning direction and controls the UVLED to emit ultraviolet light of a second light quantity. | 10-01-2009 |
20090244230 | ULTRAVIOLET CURING INKJET PRINTER, PRINTING METHOD USED IN ULTRAVIOLET CURING INKJET PRINTER, AND HEAD - An ultraviolet curing inkjet printer includes a first ejecting device, a first ultraviolet light irradiation device, and a second ultraviolet light irradiation device. The first ultraviolet light irradiation device is configured to emit ultraviolet light of a first light quantity for temporarily curing the ultraviolet curable inks ejected from the first ejecting device. The first ultraviolet light irradiation device is disposed posterior to the first ejecting device in a first direction as a scanning direction. The second ultraviolet light irradiation device is configured to emit ultraviolet light of a second light quantity for finally curing the ultraviolet curable inks temporarily cured by the first ultraviolet light irradiation device. The second ultraviolet light irradiation device is disposed anterior to the first ejecting device in a second direction, which is perpendicular to the first direction and is a moving direction of a recording medium relative to the first ejecting device. | 10-01-2009 |
20120327147 | DEVICE AND METHOD FOR FORMING IMAGE - An ultraviolet curing ink can be sufficiently leveled, and attachment of, for example, dust can be prevented. In an ink-jet printer, a carriage capable of reciprocating in a scanning direction is mounted with an ink-jet head for ejecting a color ink and a clear ink and ultraviolet irradiation devices for emitting ultraviolet rays. A control unit performs control so that in the forward movement of the carriage, a color ink is ejected and applied to a medium, and in the backward movement of the carriage, ultraviolet rays are irradiated to the color ink deposited on the medium and the color ink is cured. Subsequently, the medium is fed in a feed direction, and the clear ink is ejected and applied to the surface of the cured color ink in the forward movement of the carriage. In the backward movement of the carriage, the clear ink applied to the medium is irradiated by ultraviolet rays and is cured. | 12-27-2012 |