Shohji
Ikuo Shohji, Maebashi JP
Patent application number | Description | Published |
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20140332259 | WIRING SUBSTRATE AND METHOD OF MANUFACTURING WIRING SUBSTRATE - A wiring substrate includes an electrode including Cu or a Cu alloy, and a plated film including an electroless nickel-plated layer formed on the electrode and an electroless gold-plated layer formed on the electroless nickel-plated layer. The electroless nickel-plated layer is formed by co-precipitation of Ni, P, Bi, and S, the electroless nickel-plated layer includes a content of P of 5% by mass or more and less than 10% by mass, a content of Bi of 1 ppm by mass to 1,000 ppm by mass, and a content of S of 1 ppm by mass to 2,000 ppm by mass, and a mass ratio of the content of S to the content of Bi (S/Bi) is more than 1.0. | 11-13-2014 |
Lkuo Shohji, Kiryu JP
Patent application number | Description | Published |
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20150334828 | WIRING SUBSTRATE AND METHOD FOR MANUFACTURING SAME - There is provided a wiring substrate including an electrode including Cu or a Cu alloy, a plating film having a film including at least Pd, formed on the electrode, and a solder which is bonded onto the plating film by heating, has a melting point of lower than 140° C., and includes Pd dissolved therein, a Pd concentrated layer being absent between the solder and the electrode. | 11-19-2015 |
Reijiroh Shohji, Tokyo JP
Patent application number | Description | Published |
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20100238331 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips. | 09-23-2010 |
20150179546 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate. | 06-25-2015 |