Patent application number | Description | Published |
20080248280 | Process for Preparing a Dispersion Liquid of Zeolite Fine Particles - The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process. | 10-09-2008 |
20080248328 | Process for Preparing a Zeolite-Containing Film - The invention provides a preparation process of a zeolite-containing film which can raise a zeolite component therein, control the physical properties of the surface, and provide a highly smooth film. The process for preparing a zeolite-containing film has a step of forming a precursor film containing an amorphous silicon oxide portion and a zeolite-like recurring portion by using a material having an amorphous silicon oxide portion and a material having a zeolite-like recurring portion; and a dry gel conversion step of heating the precursor film in the presence of water vapor in order to grow the zeolite-like recurring portion. In this process, the material having an amorphous silicon oxide portion and/or the material having a zeolite-like recurring portion contain(s) a silicon atom bonded to the carbon atom of an organic group containing at least one carbon group. | 10-09-2008 |
20080274627 | SILICON-CONTAINING FILM, FORMING MATERIAL, MAKING METHOD, AND SEMICONDUCTOR DEVICE - Using a cyclic siloxane compound having a vinyl group directly attached to a silicon atom and a relatively bulky substituent group containing a primary carbon vicinal to the silicon, a dielectric film, especially a low-k interlayer dielectric film can be formed by the plasma-enhanced CVD process. | 11-06-2008 |
20080290472 | SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE - Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): | 11-27-2008 |
20080290521 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR | 11-27-2008 |
20080292863 | SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM - Provided is a method for preparing a siloxane polymer by hydrolysis and condensation reactions of a hydrolyzable silane compound, which has a step of preparing a salt of a silsesquioxane cage compound represented by the following formula (1): | 11-27-2008 |
20080311514 | SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING - In a mixture of silsesquioxane compounds comprising silsesquioxane units having a side chain including a direct bond between a silicon atom and a norbornane skeleton and having a degree of condensation of substantially 100%, a dimethylene chain of the norbornane skeleton remote from the silicon bonded side is substituted with at least one substituent group other than hydrogen, and an isomer having a bulkier substituent group on the dimethylene chain at an exo position is present in a higher proportion. | 12-18-2008 |
20100040893 | SUBSTRATE JOINING METHOD AND 3-D SEMICONDUCTOR DEVICE - A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution. | 02-18-2010 |
20100040895 | HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE - A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer. | 02-18-2010 |
20100061915 | METHOD FOR DEPOSITING SI-CONTAINING FILM, INSULATOR FILM, AND SEMICONDUCTOR DEVICE - A method for depositing a Si-containing film by plasma CVD is provided, and this method uses a silane compound as a film source. The silane compound has hydrogen atom or an alkoxy group as a reactive group, and has at least 2 silicon atoms in the molecule. The at least 2 silicon atoms are bonded by an intervening saturated hydrocarbon group. The ratio of the number of carbon atoms other than those included in the alkoxy group [C] to the number of silicon atoms [Si] ([C]/[Si]) is at least 3, and all silicon atoms are directly bonded to at least 2 carbon atoms. This method has realized an effective film deposition rate. Chemical stability of the film has also been improved by providing hydrophobicity with the film simultaneously with the suppression of the reactivity of the silicon atom for the nucleophilic reaction. | 03-11-2010 |
20100137626 | ORGANIC SILANE COMPOUND FOR FORMING SI-CONTAINING FILM BY PLASMA CVD AND METHOD FOR FORMING SI-CONTAINING FILM - An organic silane compound for forming a Si-containing film by plasma CVD is provided. The silane compound contains 2 or more silicon atoms bonded by an intervening straight chain or branched oxygen-containing hydrocarbon chain having 4 to 8 carbon atoms containing a bond represented by C | 06-03-2010 |
20100283133 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR | 11-11-2010 |
20110178322 | PREPARATION PROCESS OF TRISILYLAMINE - Provided is a preparation process of trisilylamine capable of preparing high-purity trisilylamine more easily at a lower cost. More specifically, provided is a preparation process of trisilylamine, comprising a step of thermally decomposing perhydropolysilazane under an oxygen-free or low oxygen atmosphere. | 07-21-2011 |
20120165564 | METHOD FOR PREPARING PURIFIED AMINOSILANE - An object is to provide a highly pure aminosilane having a reduced amount of halogen impurity, which is suitable for applications of electronic materials and others. More specifically, provided is a method for preparing a purified aminosilane comprising at least the steps of treating, with an alkyl metal reagent, an aminosilane having a Si—N bond but not a Si-halogen bond and having halogen impurity content of 1 ppm (w/w) or more; and distilling the treated aminosilane. | 06-28-2012 |
20120184674 | SILICONE RESIN COMPOSITION AND OPTICAL MATERIAL - A silicone resin composition is provided comprising a silicon base polymer obtained from dehydration reaction of a silicon base monomer comprising at least 70 mol % of a hydrolyzable silane compound (A). The hydrolyzable silane compound (A) has at least a pair of silicon atoms linked by a linking group which is an aliphatic hydrocarbon group or an aromatic ring-containing hydrocarbon group, and having attached thereto at least three substituent groups selected from hydrogen, hydroxyl and hydrolyzable groups. A proportion of aromatic structure-containing substituent groups is up to 30 mol % of the entire silicon-bonded substituent groups. The composition is suited to form an optical material. | 07-19-2012 |
20120207917 | CONDUCTIVE PATTERN-FORMING COMPOSITION AND METHOD - A conductive pattern-forming composition is obtained by loading a silicone rubber composition comprising a curable organopolysiloxane and a curing agent with conductive submicron particles. | 08-16-2012 |
20130092423 | METHOD FOR FORMING CONDUCTIVE CIRCUIT - A conductive circuit is formed by printing a pattern using a conductive ink composition and heat curing the pattern. A thixotropic agent, typically carbon black is added to the solvent-free ink composition comprising an addition type silicone resin precursor, a curing catalyst, and conductive particles. The ink composition has such thixotropy that the printed pattern may retain its shape after curing. | 04-18-2013 |
20140060903 | CONDUCTIVE INK COMPOSITION, FORMATION OF CONDUCTIVE CIRCUIT, AND CONDUCTIVE CIRCUIT - A conductive circuit is formed by printing a conductive ink composition to form a pattern and heat curing the pattern, the ink composition comprising an addition type silicone rubber precursor, a curing catalyst, conductive particles having a density of up to 2.75 g/cm | 03-06-2014 |
20140374005 | FORMATION OF CONDUCTIVE CIRCUIT - A conductive circuit is formed using a substantially solvent-free, liquid, addition curable, conductive circuit-forming ink composition comprising (A) an organopolysiloxane having at least two silicon-bonded alkenyl groups, (B) an organohydrogenpolysiloxane having at least two SiH groups, (C) conductive particles, (D) a thixotropic agent, and (E) a hydrosilylation catalyst. The ink composition is printed on a metal electrode to form a green circuit pattern layer, which is fired and cured for thereby forming a conductive circuit and bonding the conductive circuit to the metal electrode. | 12-25-2014 |
20140374905 | FORMATION OF CONDUCTIVE CIRCUIT, CONDUCTIVE CIRCUIT, AND CONDUCTIVE INK COMPOSITION - A conductive circuit is formed by printing a pattern of an ink composition and curing the pattern. The ink composition is a substantially solvent-free, liquid, addition curable, ink composition comprising (A) an organopolysiloxane having at least two alkenyl groups, (B) an organohydrogenpolysiloxane having at least two SiH groups, (C) conductive particles having an average particle size ≧5 μm, (D) conductive micro-particles having an average particle size <5 μm, (E) a thixotropic agent, and (F) a hydrosilylation catalyst. | 12-25-2014 |