Patent application number | Description | Published |
20100000855 | Film Forming Apparatus and Method of Forming Film - Provided is a film forming apparatus and a film forming method that are capable of enhancing film property uniformity and improving productivity. A film forming apparatus ( | 01-07-2010 |
20110056829 | CATHODE UNIT AND SPUTTERING APPARATUS PROVIDED WITH THE SAME - There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields. | 03-10-2011 |
20110062019 | SPUTTERING APPARATUS - There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface. | 03-17-2011 |
20110201139 | METHOD OF MANAGING SUBSTRATE - The electrostatic chuck is made up of: a chuck main body having electrodes; a chuck plate of a dielectric material and having a rib portion with which a peripheral edge portion of the substrate is capable of coming into surface contact, and a plurality of supporting portions which are vertically disposed at a predetermined distance from one another in an inner space enclosed by the rib portion; and a gas introduction means for introducing a predetermined gas into the inner space. When the substrate is held by the electrostatic chuck which is arranged to attract the substrate by the chuck plate and to form a gas atmosphere by supplying a predetermined gas into the inner space, a current value is monitored by causing an AC current to flow in a capacitance of the chuck plate through an AC power supply, a gas flow amount is monitored by causing the gas to flow through the gas introduction means, and a substrate state is managed based on a variation in at least one of the current value and the gas flow amount to prevent damages to the substrate. | 08-18-2011 |
20110256810 | METHOD OF MANUFACTURING CHUCK PLATE FOR USE IN ELECTROSTATIC CHUCK - There is provided a method of manufacturing a chuck plate for an electrostatic chuck of good productivity which is free from poor releasing of a wafer which is a to-be-processed substrate, from the initial time of putting the electrostatic chuck to a new use. The method of manufacturing a chuck plate for electrostatic chuck ES which is made up of a dielectric body to cover a surface of the chuck main body having electrodes, includes the steps of: obtaining a sintered body by compression-forming raw material powder (or raw meal) into a predetermined shape and then sintering the same; forming, by polishing, such a surface of the sintered body as will come into contact with a substrate to be attracted, into a predetermined surface roughness and flatness; and performing blast processing for selectively removing only ready-to-be-separated particles that come into existence on the surface as a result of the polishing. | 10-20-2011 |
20130001075 | SPUTTERING APPARATUS AND SPUTTERING METHOD - A sputtering apparatus includes: a vacuum chamber in which a target is to be disposed; a power supply to input power to the target; gas introduction device; exhaust device; and substrate holding device to hold a substrate to be processed. The substrate holding device includes: a chuck main body having positive and negative electrodes; a chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact with the rib portion; and a multiplicity of supporting portions provided upright and arranged at predetermined intervals in an interior space surrounded by the rib portion; and a DC power supply to apply a direct voltage between the two electrodes. The sputtering apparatus suppresses a variation in film thickness among substrates. | 01-03-2013 |
20130003250 | SUBSTRATE HOLDING DEVICE - A substrate holding device for clamping a substrate in a processing chamber in which plasma processing is carried out includes a chuck main body having positive and negative electrodes and, a chuck plate having a rib portion capable of bringing the peripheral edge portion of the substrate into surface contact therewith and multiple support portions provided upright and arranged at predetermined intervals in an internal space surrounded by the rib portion, a DC power supply for applying a DC voltage between the two electrodes, an AC power supply for passing an alternating current through the capacitance of the chuck plate, and first measuring means for measuring the alternating current passing through the capacitance of the chuck plate, and further includes removing means for removing an AC component superimposed on the alternating current from a plasma produced in the processing chamber during plasma processing. | 01-03-2013 |