Patent application number | Description | Published |
20100001352 | Semiconductor device and method of manufacturing the same - A semiconductor device includes a MOSFET having: a gate electrode provided over a silicon substrate; and a first impurity diffusion region and a second impurity diffusion region provided in the silicon substrate in different sides of said first gate electrode, wherein the MOSFET has an extension region in an upper section of the first impurity diffusion region and no extension region in an upper section of the second impurity diffusion region, and has a first silicide layer over the first impurity diffusion region and has no silicide layer over the second impurity diffusion region in vicinity of a side edge of the gate electrode. | 01-07-2010 |
20100013017 | Method of manufacturing semiconductor device, and semiconductor device - A method of manufacturing a semiconductor device including implanting an element selected from fluorine and nitrogen, over the entire region of a semiconductor substrate; oxidizing the semiconductor substrate to thereby form a first oxide film over the surface of the semiconductor substrate; selectively removing the first oxide film in a partial region; oxidizing the semiconductor substrate in the partial region to thereby form a second oxide film thinner than the first oxide film in the partial region; and forming gates to thereby form transistors. | 01-21-2010 |
20100117156 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a first transistor, a second transistor, a first interconnect, a second interconnect, and a first gate electrode. The first gate electrode is a gate electrode of the first and second transistors and extends linearly over first and second channel regions. In addition, a first source of the first transistor is located at the opposite side of a second source of the second transistor with the first gate electrode interposed therebetween, and a first drain of the first transistor is located at the opposite side of a second drain of the second transistor with the first gate electrode interposed therebetween. | 05-13-2010 |
20100123200 | Semiconductor device and method of manufacturing the same - Provided is a semiconductor device which includes, on the same semiconductor substrate, a first FET and a second FET higher in threshold voltage than the first FET. The first FET includes a first gate insulating film and a first gate electrode. The second FET includes a second gate insulating film and a second gate electrode. The first gate electrode, the second gate insulating film, and the second gate electrode contain at least one metal element selected from the group consisting of Hf, Zr, Al, La, Pr, Y, Ta, and W. Concentration of the at least one metal element at an interface between the second gate insulating film and the second gate electrode in the second FET is higher than concentration of the at least one metal element at an interface between the first gate insulating film and the first gate electrode in the first FET. | 05-20-2010 |
20100224914 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device including: a first n-channel fin-type field effect transistor formed on a first crystal plane; and a second n-channel fin-type field effect transistor formed on the first crystal plane and having a gate length longer than that of the first n-channel fin-type field effect transistor. A side surface of a fin of the first n-channel fin-type field effect transistor and a side surface of a fin of the second n-channel fin-type field effect transistor are both formed on a second crystal plane having a carrier mobility lower than that of the first crystal plane. The width of the fin of the second n-channel fin-type field effect transistor is greater than the width of the fin of the first n-channel fin-type field effect transistor. | 09-09-2010 |
20100270621 | Semiconductor device and method of manufacturing the semiconductor device - A semiconductor device includes: a FinFET (Fin Field Effect Transistor); and a PlanarFET (Planar Field Effect Transistor). The FinFET is provided on a chip. The PlanarFET is provided on the chip. A second gate insulating layer of the PlanarFET is thicker than a first gate insulating layer of the FinFET. | 10-28-2010 |
20120315736 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first region including a FinFET (Fin Field Effect Transistor), forming a second region including a PlanarFET (Planar Field Effect Transistor), forming first extension regions in the plurality of fins in the first region, forming second extension regions in the second region using the second gate electrode as a mask, forming first side walls and second side walls on side surfaces of the first gate electrode and on side surfaces of the second gate electrode, respectively, and forming a source and a drain of the FinFET in the first region using the first gate electrode and first side walls as masks and forming a source and a drain of the PlanarFET in the second region by an ion implantation method using the second gate electrode and second side walls as masks, at the same time. | 12-13-2012 |
Patent application number | Description | Published |
20110023089 | PROFITS GIVE-BACK DEVICE, PROFITS GIVE-BACK METHOD, PROGRAM STORAGE MEDIA, PROFITS GIVE-BACK SYSTEM, CONTENT PROVIDING DEVICE, CONTENT PROVIDING METHOD, PROGRAM STORAGE MEDIA, AND CONTENT PROVIDING SYSTEM - A profit give-back device, profit give-back method, program storage medium, profit give-back system, content providing device, content providing method, program storage media, and content providing system are disclosed. Profits give-back processing is performed according to the accumulated points proportionate to the number of times the content with a commercial video is provided to a client PC 4 and thus the fare profits giveback can be easily performed. A preset content with a commercial video is provided to a user when requested from the client PC 4, and it is possible to surely provide advertisement information without the user being aware of the commercial. | 01-27-2011 |
20140059536 | MOBILE TERMINAL, INFORMATION PROCESSING APPARATUS, AND INFORMATION PROCESSING METHOD - A mobile terminal includes: a reception section configured to receive an application downloaded from a server by operation of a browser in an information processing apparatus and transmitted through the information processing apparatus; and a management section configured to install the application received by the reception section. | 02-27-2014 |
20140244367 | PERSONAL CASTING SYSTEM - A profit redistribution device, profit redistribution method, program storage medium, profit redistribution system, content providing device, content providing method, program storage media, and content providing system are disclosed. Profit redistribution processing is performed according to the accumulated points proportionate to the number of times the content with a commercial video is provided to a client PC. Thus, a fair profit redistribution can be easily performed. A preset content with a commercial video is provided to a user when requested from the client PC, and it is possible to provide advertisement information without the user being aware of the commercial. | 08-28-2014 |