Patent application number | Description | Published |
20110259391 | REAL TIME PROCESS MONITORING AND CONTROL FOR SEMICONDUCTOR JUNCTIONS - A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB | 10-27-2011 |
20130130481 | METHOD AND APPARATUS FOR ATOMIC HYDROGEN SURFACE TREATMENT DURING GaN EPITAXY - Methods and apparatus for generating and delivering atomic hydrogen to the growth front during the deposition of a III-V film are provided. The apparatus adapts HWCVD technology to a system wherein the Group III precursor and the Group V precursor are delivered to the surface in isolated processing environments within the system. Multiple HWCVD units may be incorporated so that the atomic hydrogen parameters may be varied in a combinatorial manner for the development of III-V films. | 05-23-2013 |
20140034957 | Index-Matched Insulators - Devices are described including a first component and a second component, wherein the first component comprises a Group III-N semiconductor and the second component comprises a bimetallic oxide containing tin, having an index of refraction within 15% of the index of refraction of the Group III-N semiconductor, and having negligible extinction coefficient at wavelengths of light emitted or absorbed by the Group III-N semiconductor. The first component is in optical contact with the second component. Exemplary bimetallic oxides include Sn | 02-06-2014 |
20140124788 | Chemical Vapor Deposition System - Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices. | 05-08-2014 |
20140124817 | Contact Layers - An electrical contact is formed on a III-V semiconductor comprising gallium. The contact is formed by depositing a first layer comprising In, Au, and a dopant on the surface of a III-V semiconductor and a second layer comprising a conductive oxide on the first layer. The deposited layers are annealed in an inert atmosphere. The annealing causes the formation of a Ga—Au compound at the interface between the III-V semiconductor and the first layer. At least a portion of the dopant migrates into the III-V semiconductor such that the dopant provides n-type or p-type conductivity to the III-V semiconductor. The specific contact resistivity between the III-V semiconductor and the second layer is less than about 10 | 05-08-2014 |
20140127887 | Chemical Vapor Deposition System - Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices. | 05-08-2014 |
20140191262 | MATERIAL WITH TUNABLE INDEX OF REFRACTION - Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed. | 07-10-2014 |
20140299056 | Low temperature migration enhanced Si-Ge epitaxy with plasma assisted surface activation - Epitaxial films are grown by alternately exposed to precursor dosing regions, inert gas plasma regions, hydrogen-containing plasma regions, chlorine-containing plasma and metrology regions, or regions where an atomic hydrogen source is located. Alternately, laser irradiation techniques may be substituted for the plasma energy in some of the processing regions. The film growth process can be implemented at substrate temperatures between about 25 C and about 600 C, together with optional exposures to laser irradiation to cause the surface of the film to melt or to experience a near-melt condition. | 10-09-2014 |
Patent application number | Description | Published |
20120208352 | METHODS AND SYSTEMS FOR FORMING THIN FILMS - A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films. | 08-16-2012 |
20120208357 | METHODS AND SYSTEMS FOR FORMING THIN FILMS - A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films. | 08-16-2012 |
20130045587 | LOW TEMPERATURE MIGRATION ENHANCED Si-Ge EPITAXY WITH PLASMA ASSISTED SURFACE ACTIVATION - Epitaxial films are grown by alternately exposed to precursor dosing regions, inert gas plasma regions, hydrogen-containing plasma regions, chlorine-containing plasma and metrology regions, or regions where an atomic hydrogen source is located. Alternately, laser irradiation techniques may be substituted for the plasma energy in some of the processing regions. The film growth process can be implemented at substrate temperatures between about 25 C and about 600 C, together with optional exposures to laser irradiation to cause the surface of the film to melt or to experience a near-melt condition. | 02-21-2013 |
20130118404 | Methods and Systems for Forming Thin Films - A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films. | 05-16-2013 |
20130171350 | High Throughput Processing Using Metal Organic Chemical Vapor Deposition - A metal-organic chemical vapor deposition (MOCVD) system is provided for high throughput processing. The system comprises a chamber containing a substrate support system comprising a plurality of substrate support planets operable to support one or more substrates, and a gas emission system operable to provide a plurality of isolated environments suitable for depositing uniform layers on the substrates. The MOCVD system is operable to independently vary one or more process parameters in each isolated environment, and to provide common process parameters to all substrates for depositing one or more layers on all substrates. Methods of forming uniform layers on a substrate are provided wherein at least one of the layers is deposited in an isolated environment. | 07-04-2013 |
20130171805 | GaN Epitaxy With Migration Enhancement and Surface Energy Modification - Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example. | 07-04-2013 |
20130313566 | GaN Epitaxy With Migration Enhancement and Surface Energy Modification - Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example. | 11-28-2013 |
20140014965 | Chemical vapor deposition system with in situ, spatially separated plasma - Chemical vapor deposition (CVD) systems and methods for forming layers on a substrate are disclosed. Embodiments of the system comprise a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining site isolation. Methods of forming layers on a substrate comprise forming a first layer from a precursor on a substrate in a CVD environment, contacting the substrate with plasma in a plasma environment, wherein the forming and contacting steps are performed in the unitary system and repeating the forming and contacting steps until a layer of desired thickness is formed. The forming and contacting steps can be performed to form devices having multiple distinct layers, such as Group III-V thin film devices. | 01-16-2014 |
20140170803 | CIGS Absorber Formed By Co-Sputtered Indium - In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport. | 06-19-2014 |
20140321027 | Rechargeable Power Source For Mobile Devices Which Includes An Ultracapacitor - Provided herein is a rechargeable power source that can be quickly charged and use for charging mobile and cordless devices. The power source includes an ultracapacitor which comprises a composite structure including carbon nanotubes attached to an oxide layer. | 10-30-2014 |
20140349216 | STRUCTURE FOR ELECTRIC ENERGY STORAGE USING CARBON NANOTUBES - A composite electrode structure and methods of making and using thereof are disclosed. The structure has a metal substrate with a metal oxide layer. The average thickness of the metal oxide layer is less than 150 nm, and comprises at least a first metal and a second metal, wherein the first metal and the second metal are different elements. A plurality of carbon nanotubes is disposed on a first surface of the metal oxide layer. At least a portion of the carbon nanotubes are disposed such that one end of the carbon nanotube is positioned at least 5 nm below the surface of the metal oxide layer. | 11-27-2014 |